Stabilization of the anatase phase in TiO2(Fe, PEG) nanostructured coatings

Multilayered TiO₂(Fe³⁺, PEG) films were deposited on glass and SiO₂/glass substrates by sol-gel dipping method. The influence of Fe³⁺ and PEG(polyethylene glycol) concentrations, the number of layers, the thermal treatment time and the temperature on the optical and microstructural properties of the TiO₂ films were studied.As-deposited TiO₂(Fe³⁺, PEG) films were very porous, but after the thermal treatment at 500 °C, the PEG decomposed and burned out to porosity decreasing. Homogeneous nanostructured films were obtained, where the amorphous and the anatase phases coexist. XRD analysis showed that no rutile phase is observed in the films deposited on SiO₂/glass as compared with those deposited directly on glass and that the presence of the anatase phase in the films without PEG is more evident in the three-layers film. The XRD intensity of the main peak of anatase from 25° decreases with the increase of PEG concentration.The optical gap of the TiO₂(Fe³⁺, PEG) films is found in 2.52-2.56 eV range and does not essentially depend on the PEG content.     

Simultaneous reduction in leakage current and enhancement in magnetic moment in BiFeO3 nanofibers via optimized Sn doping

Sn⁴⁺‐doped BiFeO₃ (BFO) nanofibers have been fabricated by sol–gel based electrospinning method with nanofiber diameter in the range of 30–100 nm in the annealed state. The leakage current density dropped by two orders of magnitude in 3% Sn‐doped BFO nanofibers compared to undoped BFO samples. Our density functional theory (DFT) simulation results indicate that Sn⁴⁺ prefers to occupy the Fe³⁺ site in BFO with a formation energy of 1.89 eV. The impurity Sn acts as a shallow donor with a low transition energy level of 41 meV. Furthermore, an enhancement in the saturation magnetization was simultaneously observed for 3% Sn‐doped nanofibers, which correlated well with our theoretical calculations. In other words, by carefully tailoring the degree of Sn doping in BFO nanofibers, we can reduce the leakage current and concurrently enhance the magnetic moment. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of ion-doping at different sites on multiferroic properties of BiFeO3 thin films

A-site Ce and B-site Zr codoped Bi_1−x Ce _x Fe_1−y Zr _y O₃ (BCFZ) thin films with different compositions were successfully prepared on the Pt/Ti/SiO₂/Si substrates by chemical solution deposition. The influence of the A-site Ce and B-site Zr codoping on the structure, surface morphology, electrical and magnetic properties of BFO films were investigated, respectively. The comparative study suggested that the A-site Ce doping with various contents have notable influences on the electrical properties of the BFO films, while the B-site Zr doping with different contents affect mainly the magnetic properties of the BFO films. Compared with the other BCFZ films studied here, the Bi_0.97Ce_0.03Fe_0.97Zr_0.03O₃ film showed the lowest dielectric loss and leakage current density, a well-squared P–E loop and fatigue-free characteristics as well as the strong magnetization.     

Influence of the ion energy on the structure of Bi and Fe2O3 thin films

Compounds containing bismuth, iron and oxygen (BFO) can result in materials with important magnetic and electrical properties for high-technology applications. We plan to prepare such compounds using the simultaneous ablation of bismuth and iron oxide targets. For that reason in the first part of this work we study the plasmas and the materials produced by ablation of bismuth or Fe₂O₃ targets, and then the two plasmas are combined in order to deposit the BFO compounds. The individual plasmas were characterized using a Langmuir probe, in order to measure the mean kinetic ion energy (E _p) and plasma density (N _p). Bismuth and magnetite-Fe₃O₄ thin films were obtained in high vacuum (2.7×10^?4 Pa). Meanwhile for the deposition of α-Fe₂O₃ (hematite) or amorphous bismuth oxide thin films a reactive atmosphere (Ar/O₂=80/20) was used. All depositions were made at room temperature. The bismuth thin films crystallized in the rhombohedral metallic system with preferential orientations that depended on the Bi-ion energy used. Bismuth oxide phases were only obtained after annealing of the Bi thin films at different temperatures. Iron oxide thin films reproducing the target stoichiometry were obtained at a certain value of iron-ion energy. Preliminary structural results of the BFO thin films obtained by the combination of the individual plasmas are presented.     

Effect of pore size on ferroelectric properties of multiferroic BiFeO3 films prepared on porous silicon

The ferroelectric properties of BiFeO₃ (BFO) films spray deposited on porous silicon have been studied. The analysis of XRD and FESEM investigations show that the crystalline strain in the BFO films increases with pore size. The BFO films on porous silicon substrate showed improvement in ferroelectric fatigue behavior, remanent polarization and ferroelectric switching time. A maximum memory window of 5.54 V at 1 MHz and a large remanent polarization (P_r) of 13.1 μC/cm² have been obtained at room temperature. The improvement in the ferroelectric properties of these films has been correlated to the crystalline strain.     

Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

We investigated ferroelectric characteristics of BiFeO₃ (BFO) thin films on SrRuO₃ (SRO)/yttria-stabilized zirconia (YSZ)/glass substrates grown by pulsed laser deposition. YSZ buffer layers were employed to grow highly crystallized BFO thin films as well as SRO bottom electrodes on glass substrates. The BFO thin films exhibited good ferroelectric properties with a remanent polarization of 2P_r = 59.6 μC/cm² and fast switching behavior within about 125 ns. Piezoelectric force microscopy (PFM) study revealed that the BFO thin films have much smaller mosaic ferroelectric domain patterns than epitaxial BFO thin films on Nb:SrTiO₃ substrates. Presumably these small domain widths which originated from smaller domain energy give rise to the faster electrical switching behavior in comparison with the epitaxial BFO thin films on Nb:SrTiO₃ substrates.     

Influences of the iron ion (Fe)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

Titanium dioxide (TiO₂) thin films doping of various iron ion (Fe³⁺) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 °C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO₂ thin films comprised only the anatase TiO₂, but the crystallinity decreased when the Fe³⁺ content increased from 0% to 20%. During the Fe³⁺ addition to 20%, the phase of TiO₂ thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E_g) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe³⁺ content.     

Microstructures and multiferroic properties of textured Bi0.8La0.2FeO3 thin films

La-substituted BiFeO₃, Bi_0.8La_0.2FeO₃, thin films were fabricated on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. X-ray diffraction and high-resolution transmission electron microscope were used to analyze the structures of the films. The results show the films fabricated under optimized growth condition are (0 1 2) textured. X-ray photoemission spectroscopy results indicate that the oxidation state of Fe ion is Fe³⁺ in the films without detectable Fe²⁺. The films show low leakage current and excellent dielectric characters. Multiferroic properties with a remnant ferroelectric polarization of 5.2 μC/cm² and a remanent magnetization of 0.02 μ_B/Fe were established. These results have some implications for further research.     

Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications

The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd:BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd:BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd:BFO thin films have a higher Fe ³⁺/Fe ²⁺ratio and less oxygen vacancy (V_O) defects which enriches the ferroelectric characteristics in Nd:BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd:BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P _r) of 0.21 μC/cm² and stable RS characteristics.     

Off-stoichiometry effects on BiFeO3 thin films

The effects of Bi and Fe-excess on the structure, ferroelectric, leakage current and magnetic properties of BiFeO₃ (BFO) thin films are reported. BFO with 5% excess exhibits no change in the structure with an improvement in leakage current properties in comparison to stoichiometric BFO. Raman spectroscopy of 10% Bi excess suggests a structural change from monoclinic to rhombohedral accompanied with an improvement of resistivity and ferroelectric polarization switching. A higher Fe-excess leads to the formation of pyrochlore Bi₂Fe₄O₉ and gamma-Fe₂O₃ that cause an increase in conductivity at the macroscopic scale. The results are discussed in terms of Fe and Bi-excess effects on the defect structure of BFO.     

Effect of bilayer structure and a SrRuO3 buffer layer on ferroelectric properties of BiFeO3 thin films

Effects of the BiFe_0.95Mn_0.05O₃ thickness and a SrRuO₃ (SRO) buffer layer on the microstructure and electrical properties of BiFeO₃/BiFe_0.95Mn_0.05O₃ (BFO/BFMO) bilayered thin films were investigated, where BFO/BFMO bilayered thin films were fabricated on the SRO/Pt/Ti/SiO₂/Si(100) substrate by a radio frequency sputtering. All thin films are of a pure perovskite structure with a mixture of (110) and (111) orientations regardless of the BFMO layer thickness. Dense microstructure is demonstrated in all thin films because of the introduction of BFMO layers. The SRO buffer layer can also further improve the ferroelectric properties of BFO/BFMO bilayered thin films as compared with those of these thin films without a SRO buffer layer. The BFO/BFMO bilayered thin film with a thickness ratio of 220/120 has an enhanced ferroelectric behavior of 2P _r??165.23???C/cm² and 2E _c??518.56?kV/cm, together with a good fatigue endurance. Therefore, it is an effective way to enhance the ferroelectric and fatigue properties of bismuth ferrite thin films by constructing such a bilayered structure and using a SRO buffer layer.     

Multi-ion and pH sensitivity of AgGeSe ion selective electrodes

Many chalcogenide glasses have been found to combine benefits such as good chemical durability, selectivity, and reproducibility for applications as solid-state sensitive membranes of ion selective electrodes (ISEs). In previous works, we have shown that ISEs with ionic conductive AgGeSe membranes have good sensitivity to Ag⁺ ions. In the present work, we explore the Ag_x(Ge_0.25Se_0.75)_100−x, 10≤x≤30 (at%) system as candidate for ISEs applications detecting several other ions (K⁺, Mg²⁺, Cr³⁺, Fe³⁺, Ni²⁺, Cd²⁺, Hg²⁺, and Pb²⁺). We evaluated ISEs fabricated with bulk as well as with thin film membranes. We found no dependence of the sensing properties on the Ag content of the ionic conductive membranes. Thin films exhibited the same properties than bulk membranes, indicating that these chalcogenide glasses have great potential for miniaturization. The ISEs showed a high response (Nernstian or super-Nernstian) to the presence of Hg²⁺, Pb²⁺, and Fe³⁺, a low response (sub-Nernstian) to the presence of Cr³⁺, and a total lack of response to the presence of Cd²⁺, Ni²⁺, Mg²⁺, and K⁺. We also tested how the pH of the solution affected the response of the ISEs. The potentials of the ISEs were practically constant in neutral or acidic solutions, while decreased drastically in basic solutions when the primary ion was not present. The latter phenomenon was caused by the slow dissolution of the membrane into the solution, meaning that long-term basic environments should be avoided for these ISEs. We concluded that ISEs with ionic conductive AgGeSe membranes are good candidates to integrate multi-electrode systems.     

Fe,Co共掺杂ZnO薄膜结构及发光特性研究

采用溶胶凝胶法在玻璃衬底上制备了Fe,Co共掺Zn0.9FexCo0.1-xO(x=0,0.03,0.05,0.07)系列薄膜.通过扫描电镜(SEM)、X射线衍射(XRD)、X射线光电子谱(XPS)和光致发光(PL)谱对薄膜样品的表面形貌、晶体结构、成分和光学性能进行了研究.XRD结果表明所有ZnO薄膜样品都呈六方纤锌矿结构,在样品中没有观察到与Fe和Co相关的团簇,氧化物及其他杂相的衍射峰,表明共掺杂改善了Fe或Co在ZnO的分散性.XPS测试结果揭示样品中Co离子的价态为+2价;Fe离子的价态为+2价和+3价共存,但Fe相对浓度的增大导致Fe3+含量增加.所有样品的室温光致发光谱(PL)均观察到紫外发光峰和蓝光双峰,其中Fe,Co共掺ZnO薄膜的紫外发光峰较本征ZnO出现蓝移,蓝光双峰峰位没有变化,但发光强度有所减弱;而掺杂ZnO薄膜的绿光发光峰几乎消失.最后,结合微结构和成分分析对薄膜样品的发光机理进行了讨论.     

Modification in structure of La and Nd co‐doped epitaxial BiFeO3 thin films probed by micro Raman spectroscopy

The influence of La and Nd co‐substitution on structure, electric and magnetic properties of epitaxial thin films of BiFeO₃ (BFO) was examined. We demonstrate structural phase transition in co‐doped La and Nd BFO thin films using Raman spectroscopy. Based on group theoretical analysis of the number and symmetry of Raman lines, we provide strong experimental evidence that the structure has been changed from rhombohedral to monoclinic due to co‐doping in BFO. The change in structure was also reflected in morphology of these films. Room temperature magnetic hysteresis curves showed that doped films exhibit enhanced ferromagnetic properties with remnant magnetization of ~10 emu/cm³ and coercive field of 1.2 kOe. The enhanced magnetic properties highlight the potential applications of doped BLNFO thin film for smart devices. Copyright © 2015 John Wiley & Sons, Ltd.     

Effects of BaTiO<Subscript>3</Subscript> and SrTiO<Subscript>3</Subscript> as the buffer layers of epitaxial BiFeO<Subscript>3</Subscript> thin films

BiFeO₃ (BFO) thin films with BaTiO₃ (BTO) or SrTiO₃ (STO) as buffer layer were epitaxially grown on SrRuO₃-covered SrTiO₃ substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.     

Influence of heating rate on the crystalline properties of 0.7BiFeO3-0.3PbTiO3 thin films prepared by sol-gel process

0.7BiFeO₃-0.3PbTiO₃ (BFPT7030) thin films were deposited on SiO₂/Si substrates by sol-gel process. The influence of heating rate on the crystalline properties of BFPT7030 thin films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). XRD patterns of the films showed that a pure perovskite phase exists in BFPT7030 films annealed by rapid thermal annealing (RTA) technique. SEM and AFM observations demonstrated that the BFPT7030 films annealed by RTA at 700 °C for 90 s with the heating rate of 1 °C s⁻¹ could show a dense, crack-free surface morphology, and the films’ grains grow better than those of the films annealed by RTA at the same temperature with other heating rates. XPS results of the films indicated that the ratio of Fe³⁺:Fe²⁺ is about 21:10 and 9:5 for the films annealed by RTA at 700 °C for 90 s with the heating rate of 1 and 20 °C s⁻¹, respectively. That means the higher the heating rate, the higher the concentration of Fe²⁺ in the BFPT7030 thin films.     

Multiferroic properties of solben gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi₅FeTi₃O₁₅ thin films (BFCT-x, Bi₅Fe_1-xCo_xTi₃O₁₅) were prepared using a sol—gel technique. XRD patterns confirm their single phase Aurivillius structure, and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12. The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films. The remanent magnetization (M_r) first increases and reaches the maximum value of 0.42 emu/cm³ at x=0.12 due to the possible Fe³⁺—O—Co³⁺ ferromagnetic coupling. When x = 0.25, the M_r increases again because of the dominant Fe³⁺—O—Co³⁺ ferromagnetic coupling. The remanent polarization (2P_r) of BFCT-0.25 was measured to be as high as 62 μC/cm², a 75% increase when compared with the non-doped BFCT-0 films. The 2P_r remains almost unchanged after being subjected to 5.2 × 10⁹ read/write cycles. Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

Mössbauer and optical investigation of Co3−x Fe x O4 thin films grown by sol–gel process

Structural transformation and the related variation in magnetic and optical properties of Co_3?x Fe _x O₄ thin films grown by a sol–gel method have been investigated as the Fe composition varies up to x?=?2. The normal spinel phase is dominant below x?=?0.55 and the inverse spinel phase grows as x increases further. Conversion electron Mössbauer spectroscopy (CEMS) measurements indicate that the normal spinel phase have octahedral Fe³⁺ ions mostly while the inverse spinel phase contain octahedral Fe²⁺ and tetrahedral Fe³⁺ ions. For higher Fe composition (x?>?1.22), Co²⁺ ions are found to substitute the octahedral Fe²⁺ sites. The measured optical absorption spectra for the Co_3?x Fe _x O₄ films by spectroscopic ellipsometry support the CEMS interpretation.     

Luminescence of Fe3+ in single crystals of LiAl5O8

We have measured the luminescent properties of single crystals of LiAl₅O₈:Fe³⁺. In addition to a zero-phonon line due to Fe³⁺ in A-sites, we have observed another sharp fluorescent line at 699.2 nm which we assign to Fe³⁺ occupying B-sites. The excitation spectrum of the B-site Fe³⁺ shows characteristics similar to those of the A-site Fe³⁺ but are also shifted towards longer wavelengths. The spectra of the single crystals are compared with those of ordered and disordered powder samples.     

Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate

A multiferroics/multiferroics BiFeO₃/Bi_0.90La_0.10Fe_0.90Zn_0.10O₃ (BFO/BLFZO) bilayer was deposited on Pt/TiO₂/SiO₂/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ～162 and an improved magnetic behavior of 2M_s ～ 34.6 emu/cm³, together with an excellent fatigue endurance. A remanent polarization of 2P_r ～ 116.2 μC/cm² for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)