Further study on electrostatic capacitance of an inclined plate capacitor

Developing the expression for calculating the capacitance of an inclined plate capacitor is investigated. From the result when the intersection line of the two planes containing the two electrodes separately lies outside the electrodes, the situation that the intersection line locates on an electrode is treated as a combination of two capacitors. Then the capacitance is achieved in term of complete elliptic integrals. The perpendicular-plate capacitor in such a case is taken as an example for capacitance calculation.     

非平行板电容器电容的边缘效应研究

本文利用保角变换将非平行板电容器变换为平行板电容器;再利用施瓦兹-克利斯多菲变换计算考虑边缘效应时电容器的电容.讨论了平板倾斜角和边缘效应对平板电容器电容的影响.     

Modeling and calculation of the capacitance of a planar capacitor containing a ferroelectric thin film

The capacitance of a two-layer planar capacitor containing a thin layer of SrTiO₃ is calculated by conformal mapping using the partial capacitanc e method. Simple formulas are obtained for approximation calculation of the capacitances of individual components of a planar structure, and their limits of applicability are determined. A relation for the capacitance of a planar capacitor is derived which takes account of the size effect in a ferroelectric film within the context of the partial capacitance method. The calculated result is compared with the experimentally measured capacitance. Zh. Tekh. Fiz. 69, 1–7 (April 1999)     

非平行板电容器电场和电容的另一种计算

通过求解电势的拉普拉斯方程,得到非平行板电容器两极板间的电势分布,从而求出其电场和电容,结果与用其他方法所得结果完全相同．     

相干平行板电容器对外场的动态响应

基于介观体系动态响应的自洽理论,讨论了介观相干平行板电容器的电容.结果表明相干电容器的电容对外场频率有很强的依赖关系,并且是随频率变化的复变函数.该电容随频率的变化关系呈现出一个非常有意义的特性,即电容虚部曲线有一个较尖锐的峰,它正好与电容实部的极小位置相对应,而进一步研究发现它们与该电容体系中的类等离子体激发相联系.另外,也讨论了介观电容的尺寸效应,发现当极板间距很大时,电容值和宏观的几何电容结果趋于一致.     

AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型

AlGaN/GaN HEMT外部边缘电容Cofd是由栅极垂直侧壁与二维电子气水平壁之间的电场构成的等效电容.本文基于保角映射法对Cofd进行物理建模,考虑沟道长度调制效应,研究外部偏置、阈值电压漂移和温度变化对Cofd的影响:随着漏源偏压从零开始增加,Cofd先保持不变再开始衰减,其衰减速率随栅源偏压的增加而减缓;AlGaN势垒层中施主杂质浓度的减小和Al组分的减小都可引起阈值电压的正向漂移,正向阈值漂移会加强沟道长度调制效应对Cofd的影响,导致Cofd呈线性衰减.在大漏极偏压工作情况下,Cofd对器件工作温度的变化更加敏感.     

关于非平行板电容器电容计算的讨论

用串联方法计算非平行板电容器的电容，简便地得到与其他方法相同的结果。     

共焦椭圆柱等值坐标电容器的电容

利用共焦椭圆柱坐标给出共焦椭圆柱电容器电容的一般表示,求解椭圆柱形电容器和双曲柱形电容器的电容,丰富了此类电容器电容值计算的结果.     

Design and fabrication of a carbon-nanotube-based capacitor patterned on an Archimedean spiral

To achieve the maximum area utilization ratio for a parallel electrode capacitor, an Archimedean spiral was used to design the capacitor pattern. Multi-walled vertically aligned carbon nanotubes (VACNTs) were used for the capacitor electrodes because of their metallic properties and their endurance toward various chemical reagents. In contrast to the parallel plate capacitor, the total capacitance was formed by parallel connections of all unit cells of the individual VACNT capacitors, so that a relatively higher capacitance was obtained. This design can provide a new approach to fill diverse dielectrics into a spiral capacitor to obtain different capacitances for various applications.     

非简谐振动对石墨烯量子电容和热稳定性的影响

采用固体物理理论和方法,研究了单层石墨烯的量子电容和它的温度稳定性随温度和电压的变化规律,探讨原子非简谐振动对它的影响.结果表明:(1)当电压一定时,单层石墨烯的量子电容和温度稳定性系数均随温度升高发生非线性变化,电压小于2.3 V时,量子电容随温度升高而增大,温度稳定性系数随温度升高由缓慢变化到很快增大,电压高于2.3 V时,量子电容随温度升高先增大后减小,而其温度稳定性系数随温度升高由缓慢变化到很快减小.温度一定时,量子电容只在电压值为0.4～2.8 V范围内才变化较小,而电压值大于2.8 V时,量子电容迅速减小并趋于0;(2)与简谐近似相比,非简谐项会使石墨烯量子电容有所增大,且温度愈高,两者的差愈大,非简谐效应愈显著,温度为300 K时,非简谐的量子电容要比简谐近似的值大0.33%,而温度为1 000 K时,差值增大到1.47%;(3)电压在1.5～1.8 V之间,而温度低于800 K时,石墨烯量子电容的温度稳定性系数最小且不随温度而变,储能性能的温度稳定性最好;(4)非简谐项会使它的量子电容热稳定性系数比简谐近似的值增大,且增大的情况与温度有关,当温度为400 K时量子电容热...     

电磁脉冲模拟装置用3 MV中储电容器的研制

介绍了一台大型垂直极化有界波模拟装置所用中间储能电容器（简称中储电容器）的设计过程和实验结果。电容器采用基于元件和组件的模块化设计,呈锥台状结构,支撑壳体为真空工艺玻璃钢材料。电容器容值由模拟装置等效的二级脉冲压缩回路决定,取值为1.8 nF。电容器内部绝缘介质为十二烷基苯,外部绝缘介质为45#变压器油,设计耐压3 MV,其绝缘长度主要由元件的体绝缘特性决定。采用三维电磁仿真软件估算中储电容器与中储开关构成回路的电感为659 nH,接近于实测数据623 nH。电容器上脉冲电压的测量通过对电容器电流进行积分来获取,而电流的采集采用封装在SF₆气体中的3个膜电阻并联后所构成测量模块实现。实际运行数据表明,中储电容器容值达到设计值,测量探头标定系数稳定,在工作电压3.1 MV条件下未发生绝缘问题。     

On the question of the error in the partial capacitance method

An analytical method is proposed for calculating the capacitance of a planar capacitor constructed in the form of a two-layer structure. The method is used to calculate the capacitance of a planar capacitor containing a ferroelectric film. A number of calculations were performed to check the accuracy of the partial capacitance method. The calculations made it possible to determine the limits of accuracy of the partial capacitance method for a permissible calculational error of ±3%. Zh. Tekh. Fiz. 69, 8–13 (April 1999)     

电容器边缘效应对介电常数测量的影响及修正

通过场的图形描绘法和实际测量,考虑平行板电容器边缘效应对电容测量值的影响并进行修正,从而获得对用交流电桥法测量纺织品等介质的介电常数的测量结果的修正。     

非平行板电容器电容的又一算法

应用平行板电容器电容的概念和并联电容器电容公式,给出了非平行板电容器的电容及电场分布.     

用能量法计算非平行板电容器的电容

利用电场能量和电容器的能量公式，解出非平行板电容器的电容和电场分布．该方法严谨易懂，图像清晰，另辟新径．     

电容量及损耗角的一种测量方法

介绍了在微机控制的自动测量装置中采用的双极性电容器的测试方法。这种方法用反相运算放大器微分电路获得与电容器相关的两个工频电压,并通过对它们数字化输入微机内存,最后通过对数字化后的两个周期信号进行处理求得电容量和损耗角正切。     

非平行板电容器电容和电场的两种计算方法之讨论

介绍求解非平行板电容器电容和电场的两种计算方法,一种是从平行板电容器的概念入手的求解方法,另一种是利用电场能量和电容器的能量公式,解出非平行板电容器的电容和电场分布.通过对上述两种方法的讨论,指出第二种方法,严格、简捷易懂,图像清晰,且颇具新意.     

用电容器的电阻和电容特性公式计算非平行板电容器的电容

讨论了电容器的电阻和电容特性公式,计算了非平行板电容器的电阻和电容.     

平行板电容器的尺寸效应

本文分别研究了平行圆形板和矩形板电容器的电容随其尺寸变化的规律.对于每种电容器,首先假设电荷在极板上均匀分布,由此能较简便地得出电容的近似值,然后用Ansoft软件作有限元仿真,得出更精确的数值.通过对比发现,用均匀带电近似得出的结果能够正确地反映电容随其尺寸变化的趋势,优于教科书中的平行板电容器公式;但其数值偏小,原因在于电荷在极板上并非严格地均匀分布,而是中间少、边缘多.     

Accurate capacitance-voltage characterization of organic thin films with current injection

To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage (C-V) characterization of organic thin films when current injection is significant, a three-element equivalent circuit model is proposed. On this basis, the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method. The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor, a diode, and a resistor. Moreover, the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result, and the real capacitance is 35.7% higher than the directly measured capacitance at 5-V bias in the parallel mode. This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.