Identification of inherent noise components of semiconductor devices on an example of optocouplers

In the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to 1/f^α noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise spectrum.     

一种估计半导体激光器1/f噪声参数的新方法

对含白噪声的1/f分形信号小波变换系数的方差随尺度变化的关系进行适当的变换,提出了一种基于最小二乘法的估计半导体激光器1/f噪声参数的新方法.实验表明,该方法可以有效地提取出淹没在白噪声中的激光器1/f噪声,而且估计出的噪声信号的功率谱与对比仪器的测量结果有较好的一致性. 关键词： 半导体激光器 f噪声')" href="#">1/f噪声 参数估计 小波分析     

Resonance effects in the nonadiabatic nonlinear quantum dimer

In the presence of 1/f ^β noise, we investigate the logical stochastic resonance (LSR) in an asymmetric bistable model driven by various cycling combinations of two logic inputs. The probability of correct logic outputs is calculated according to true table of logic relationships. Two major results are presented. Firstly, it is shown that the LSR effect can be obtained by changing noise strength. Over entire range of noise variance, white noise can be considered to be better than 1/f noise or 1/f ² noise to obtain clean logic operation. At a smaller noise level, 1/f noise can realize higher output probability than white noise or 1/f ² noise. In the sense, 1/f noise can be considered to be better than white noise or 1/f ². On the other hand, the correct probability can evolves nonmonotonically as noise exponent β increases, and a kind of SR-like effect can be obtained as a result of β. At certain intermediate noise variance, the output probability is able to attain its minimum at β = 1. It is also shown that actually some finite β sometime can be better than β = 0 at small range of noise variance. The study might provide some potential complement to LSR effect in the presence of 1/f ^β noise.     

基于小波变换和维纳滤波的半导体器件1/f噪声滤波

针对半导体器件中普遍存在的1/f噪声提出了一种结合了提升小波变换和维纳滤波器的处理方法.首先利用重新加权迭代最小二乘法拟合1/f噪声的功率谱曲线得到噪声参数的估计,从而选择恰当的小波.其次,对包含了1/f噪声的信号进行提升小波变换.考虑到小波变换对1/f噪声的白化作用,利用维纳滤波器对每一层小波系数进行处理.设计了最优全通滤波器以校正维纳滤波器的相频特性,使得小波系数经滤波后相位不变.最后利用提升小波逆变换获得被1/f噪声淹没的信号.利用实验检验了提出方法的有效性,实验数据采自用于微创外科手术机器人的力传感器.结果表明提出的方法能够有效抑制1/f噪声,并使传感器的分辨力提高了25%. 关键词： 半导体器件 f噪声')" href="#">1/f噪声 提升小波变换 维纳滤波     

60Co γ-射线辐照对肖特基二极管1/f噪声的影响

在肖特基二极管(Schottky barrier diode,SBD)辐照损伤机理和总剂量效应分析的基础上,利用1/f噪声的迁移率涨落和载流子数涨落模型,深入研究辐照损伤对器件1/f噪声的影响. 研究结果表明,辐照诱生新的界面态,改变界面态密度分布,进而调制了肖特基势垒高度,增大表面复合速度是引起器件性能退化主要原因,也是1/f噪声剧烈增加的主要原因. 正因为如此,噪声与器件退化存在相关性,即噪声拟合参数B越大,偏离标准值越多,器件可靠性越差,抗辐照 关键词： 肖特基二极管 f噪声')" href="#">1/f噪声 60Co γ射线')" href="#">⁶⁰Co γ射线 界面态     

1/f noise at a critical nonequilibrium phase transition

The generation of 1/f noise is demonstrated experimentally in a system consisting of a superconducting film carrying a transport current in contact with a boiling liquid coolant. It is found that wide-band 1/f noise with a large amplitude of the fluctuations is observed over a wide range of parameters. This noise is attributed to the fact that the sub-systems in contact have the same character of the relaxational dependences δT(t)∼ t ^−1/2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 9, 739–742 (10 May 1996)     

I/f noise in systems showing stochastic resonance

Stochastic resonator systems with input and/or output 1/f noise have been studied. Disordered magnets/dielectrics serve as examples for the case of output 1/f noise with white noise (thermal excitation) at the input of the resonators. Due to the fluctuation-dissipation theorem, the output noise is related to the out-of-phase component of the periodic peak of the output spectrum. Spin glasses and ferromagnets serve as interesting examples of coupled stochastic resonators. A proper coupling can lead to an extremely large signal-to-noise ratio. As a model system, a l/f-noise-driven Schmitt trigger has been investigated experimentally to study stochastic resonance with input 1/f noise. Under proper conditions, we have found several new nonlinearity effects, such as peaks at even harmonics, holes at even harmonics, and 1/f noise also in the output spectrum.     

Photoinduced current noise ina-Si: H solar cells

Summary Measurements of photoinduced current noise in amorphous silicon solar cells are reported. A 1/f ⁿ (n≈1) component, superimposed to a frequency-independent one due to simple shot noise, is attributed to the presence of defects limiting the conversion efficiency of the cell. In particular, large defects, such as local shorts or pin holes, can easily be detected since they are characterized by a very large increase of the 1/f ⁿ component. In general, even in the absence of such large defects, a correlation between the intensity of the 1/f ⁿ component and the cell conversion efficiency is found.     

Noise in boron doped amorphous/microcrystallization silicon films

Hydrogenated silicon (Si:H) film was grown by radio frequency plasma enhanced chemical vapor deposition (PECVD) method. The transition between hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) was characterized by X-ray diffraction analysis. A semiconductor system was used to measure low frequency noise (1/f noise) and random telegraph switching noise of Si:H films. The results show that the 1/f noise of μc-Si:H is 4 orders of magnitude lower than that of a-Si:H and no RTS noise was found in both films. It also shows that using μc-Si:H instead of a-Si:H film as a sensing layer will enable the development of high performance uncooled microbolometer.     

Physics of fluctuation processes in downscaled silicon MOSFETs

Physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs (metal-oxide-semiconductor field-effect transistors) including the ultra-thin film SOI (siliconon-insulator) devices using strained silicon films are reviewed. The review is substantially based on the results obtained by the authors. It is shown that the following drastic changes occur in the nature and parameters of noise in such devices as a result of their downscaling when the gate oxide thickness and the channel length and width are decreased, the SOI substrates are used, the silicon film thickness is reduced, the film doping level is varied, the strained silicon films are employed, etc. Firstly, the Lorentzian components can appear in the current noise spectra. Those components are due to (i) electron tunneling from the valence band through the gate oxide in the SOI MOSFETs of a sufficiently thin gate oxide (LKE-Lorentzians); (ii) Nyquist fluctuations generated in the source and drain regions near the back Si/SiO₂ interface in the SOI MOSFETs (BGI Lorentzians); (iii) electron exchange between the channel and some single trap in the gate oxide of the transistors with sufficiently small length and width of the channel (RTS Lorentzians). Secondly, the 1/f-noise level can increase due to (i) the appearance of recombination processes near the Si/SiO₂ interface activated by the currents of electron tunneling from the valence band; (ii) an increase in the trap density in the gate oxide of the devices fabricated on the biaxially tensile-strained silicon films; (iii) the contribution of the 1/f fluctuations of the current flowing through the gate oxide as a result of electron tunneling from the conduction band. At the same time, the 1/f-noise level may decrease due to a decrease in the trap density in the gate oxide of the transistors fabricated on the uniaxially tensile-strained silicon films. Moreover, a 1/f ^1.7 component may appear in the noise spectra for the transistors of a sufficiently thin gate oxide, whose component is due to charge fluctuations on the defects located near the interface between the gate polysilicon and the gate oxide.     

Wavelength-modulation-spectroscopy for real-time, in situ NO detection in combustion gases with a 5.2 μm quantum-cascade laser

A mid-infrared absorption strategy with calibration-free wavelength-modulation-spectroscopy (WMS) has been developed and demonstrated for real-time, in situ detection of nitric oxide in particulate-laden combustion-exhaust gases up to temperatures of 700 K. An external-cavity quantum-cascade laser (ECQCL) near 5.2 μm accessed the fundamental absorption band of NO, and a wavelength-scanned, 1f-normalized WMS with second-harmonic detection (WMS-2f/1f) strategy was developed. Due to the external-cavity laser architecture, large nonlinear intensity modulation (IM) was observed when the wavelength was modulated by injection-current modulation, and the IM indices were also found to be strongly wavelength-dependent as the center wavelength was scanned with piezoelectric tuning of the cavity. A quantitative model of the 1f-normalized WMS-2f signal was developed and validated under laboratory conditions. A sensor was subsequently designed, built and demonstrated for real-time, in situ measurements of NO across a 3 m path in the particulate-laden exhaust of a pulverized-coal-fired power plant boiler. The 1f-normalized WMS-2f method proved to have better noise immunity for non-absorption transmission, than wavelength-scanned direct absorption. A 0.3 ppm-m detection limit was estimated using the R15.5 transition near 1927 cm⁻¹ with 1 s averaging. Mid-infrared QCL-based NO absorption with 1f-normalized WMS-2f detection shows excellent promise for practical sensing in the combustion exhaust.     

Fluctuations with a 1/f α spectrum in film boiling

1/f and 1/f ² noise were observed experimentally in film boiling of water on vertically oriented platinum heater. Fluctuations with a 1/f _α spectrum were observed in a wide range of controlling parameters and seen over five orders of magnitude in frequency. It was noted that the process investigated is similar to the phenomenon of self-organized criticality. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 8, 590–593 (25 April 1999)     

Quality assessments of electrochromic devices: the possible use of 1/<Emphasis Type="Italic">f</Emphasis> current noise

Electrochromic (EC) devices, capable of modulating their optical transmittance by charge insertion/extraction, were produced by laminating films comprised of nanoporous W oxide and Ni–V oxide by a polymer electrolyte and having this three-layer stack between transparent conducting In₂O₃:Sn films backed by polyester foils. 1/f noise in the current (I) was observed when the charged (colored) EC device was discharged via a resistor. The power spectral density S _i at fixed frequency scaled as S _i  ∼ I ². Extended color/bleach cycling degraded the optical quality and homogeneity of the device and concomitantly increased the 1/f noise intensity. These initial data indicate that 1/f noise has a potential to serve as a quality measure for EC devices.     

1/f Noise in a nonequilibrium phase transition: Experiment and mathematical model

The results of an experimental investigation of a high-power source of broad-band 1/f noise, which can be generated in a system of two interacting nonequilibrium phase transitions, are presented. This process takes place when a normal conductor-superconductor phase transition is superposed on the critical liquid-vapor transition in a boiling coolant. A mathematical model describing a nonequilibrium phase transition in a complicated nonlinear system with two interacting order parameters, which involves the conversion of white noise into stochastic fluctuations of the order parameters with 1/f and 1/f ² spectra, is proposed. The properties of the model fluctuations with a 1/f spectrum agree qualitatively with the experimentally observed properties. A characteristic difference between the model fluctuations with a 1/f ² spectrum and random walks is also noted. Zh. éksp. Teor. Fiz. 113, 1748–1757 (May 1998)     

Tuning of tunneling current noise spectra singularities by localized states charging

We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching “on” and “off” of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum (1/f ^α) and also results on high frequency component of tunneling current spectra (singular peaks appear). The article is published in the original.     

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Silicon diodes with a p ⁺-n junction made in a 48-μm-thick phosphorus-doped silicon epilayer (resistivity ρ = 30 Ω cm) grown on antimony-doped Si(111) wafers (ρ = 0.01 Ω cm) are studied. The diodes are irradiated by high-energy (3.5 MeV) electrons with fluences from 5 × 10¹⁵ to 2 × 10¹⁶ cm⁻². It is shown that the conventional equivalent circuit of the diode that consists of a parallel RC network and a series-connected resistor inadequately describes the dependence of the dielectric loss tanδ on variable current frequency f in the range 1 × 10²–3 × 10⁷ Hz. Another equivalent circuit is suggested that includes not only the capacitance and resistance of the n-base (the latter increases because radiation-induced defects are compensated for by shallow donors) but also the f dependence of the capacitance of the space-charge region, which is due to retarded charge exchange between deep-level radiation-induced defects.     

Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-Ge_xSi_1−xO_y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10⁻¹¹ that can be used for further design and modeling.     

On the possibility of f 0 observation in low energy pp collisions

Within the meson-exchange model we calculate f ₀-meson production cross section in πN and NN reactions and investigate the possibility for f ₀ observation via the KˉK decay mode in pp collisions. Our studies indicate that an extraction of the f ₀ signal is unlikely due to the large background from other reaction channels. Received: 14 October 1998 / Revised version: 17 November 1998     

Conductance noise investigations with four arbitrarily shaped and placed electrodes

A general relation is derived for the spectral noise density of the voltage between two arbitrarily shaped and placed sensor electrodes on a conductor, when a constant current or voltage is applied to another pair of arbitrarily shaped and placed driver electrodes. The general relation is based on the sensitivity calculation in linear electrical networks. The relation is elaborated for conductivity fluctuations due to 1/f noise by using empirical 1/f noise relations. The influence of spot radii of the sensor electrodes on the noise is demonstrated. The theoretical results for 2 and 3-dimensional conductors are in agreement with our experimental results for carbon resistance sheets and on silicon and germanium in the resistivity range of 1Ωcm to 400Ωcm. The possibility of using the four-point probe for measuring the fluctuations in the resistivity has been demonstrated.     

Simulation of 1/f noise spectra in YBa2Cu3O7 epitaxial films

A Monte Carlo simulation of the 1/f noise spectra in the normal phase of YBa₂Cu₃O₇ epitaxial films is reported. It is conjectured that the main contribution to the noise is from oxygen transitions to vacant sites in the CuO plane. It is shown that the annealing regime and the mismatch strains between the film and the substrate are the main factors governing the domain and defect structure of the film and, hence, the 1/f noise spectrum. Fiz. Tverd. Tela (St. Petersburg) 41, 957–964 (June 1999)