Growth and characterization of type-II ZnO/ZnTe core-shell nanowire arrays for solar cell applications

Large area, well-aligned type-II ZnO/ZnTe core-shell nanowire arrays have been fabricated on an a-plane sapphire substrate. The ZnO nanowires were grown in a furnace by chemical vapor deposition with gold as catalyst and then were coated with a ZnTe shell on the ZnO nanowires surface by a metal-organic chemical deposition chamber. The morphology and size distribution of the ZnO/ZnTe core-shell nanowire arrays were studied by scanning electron microscopy (SEM) and the crystal structure was examined by x-ray diffraction (XRD). Transmission measurement was used to study the optical properties of the core-shell nanowires. The results indicated that the ZnO/ZnTe core-shell nanowire arrays have good crystalline quality. In addition, it was found that the nanowire arrays have good light absorption characteristics and these properties make it suitable for making photovoltaic devices.     

硅薄膜太阳电池表面纳米线阵列光学设计

陷光结构的优化是增加硅薄膜太阳电池光吸收进而提高其效率的关键技术之一. 以硅纳米线阵列为代表的光子晶体微纳陷光结构具有突破传统陷光结构Yablonovith极限的巨大潜力. 通常硅纳米线阵列可以用作太阳电池的增透减反层、轴向p-n结、径向p-n结. 针对以上三种应用, 本文运用有限时域差分(FDTD)法系统研究了硅纳米线阵列在 300-1100 nm 波段的光学特性. 结果表明, 当硅纳米线作为太阳电池的减反层时, 周期P=300 nm, 高度H=1.5 μm, 填充率(FR)为0.282条件下时, 反射率最低为7.9%. 当硅纳米线作为轴向p-n结电池时, P=500 nm, H=1.5 μm, FR=0.55条件下纳米线阵列的吸收效率高达22.3%. 硅纳米线作为径向p-n结电池时, 其光吸收主要依靠纳米线, 硅纳米线P=300 nm, H=6 μm, FR= 0.349 条件下其吸收效率高达32.4%, 进一步提高其高度吸收效率变化不再明显. 此外, 本文还分析了非周期性硅纳米线阵列的光学性质, 与周期性硅纳米线阵列相比, 直径随机分布和位置随机分布的硅纳米线阵列都可以使吸收效率进一步提高, 相比于周期性硅纳米线阵列, 优化后直径随机分布的硅纳米线阵列吸收效率提高了39%, 吸收效率为27.8%. 本文运用FDTD法对硅纳米线阵列的光学特性进行设计与优化, 为硅纳米线阵列在太阳电池中的应用提供了理论支持.     

Synthesis of ZnO compound nanostructures via a chemical route for photovoltaic applications

A facile, low-temperature, and low-cost chemical route has been developed to prepare ZnO nanowire and nanosphere compound structures. The morphology, structure, and composition of the yielded products have been examined by field-emission scanning electron microscopy, transmission electron microscopy, and X-ray diffraction measurements. We have systematically investigated the optical properties of the ZnO nanostructures by micro-Raman, photoluminescence, and transmission spectroscopy. The results demonstrate that the yielded ZnO nanostructures possess good optical quality with high light absorption. We have further successfully employed the obtained ZnO compound nanostructures in dye-sensitized solar cells. The light-to-electricity conversion results show that the compound nanostructure exhibits a significant enhancement of short-circuit current density due to the increased surface area and light scattering in the compound nanostructures. The present chemical route provides a simple way to synthesize various compound nanostructures with high surface area for nanodevice applications.     

Quasi-horizontal GaN nanowire array network grown by sublimation sandwich technique

Quasi-horizontal GaN nanowire array network has been grown on Au-film-coated MgO substrates via a sublimation sandwich technique. These GaN nanowire arrays principally grew along two directions which were perpendicular to each other and nearly parallel to the substrate, forming a regular network. The formation of the nanowire network was a hetero-epitaxial vapor-liquid-solid (VLS) process assisted by Au catalysts and was dependent on the substrates. Transmission electron microscopy revealed that the nanowires were single-crystalline wurtzite GaN. Raman scattering spectrum of the nanowire network presented some new features.     

Preparation and characterization of ZnTe thin films by SILAR method

Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.     

Design of surface nanowire arrays for high efficiency thin (≤10 μm) Si solar cells

We investigated the optical characteristics and expected photocurrent of 10-μm-thick Si solar cells with surface nanowire arrays. The diameter and filling ratio of the array influenced not only the optical absorption, but also the spatial distribution of the optical generation rate. Proper design of the nanowire array could locate the high optical field region far from the surface, avoiding serious carrier collection loss and raising the energy conversion efficiency.     

Structure and electrical properties of p-type twin ZnTe nanowires

Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility (μ _h ) of 0.11 cm² V⁻¹ S⁻¹, and a carrier concentration (n _h ) of 1.1×10¹⁷ cm⁻³. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.     

Investigation of the fill factor of dye-sensitized solar cell based on ZnO nanowire arrays

The fill factor of dye-sensitized solar cells based on the ZnO nanowire array is very low, which is usually ascribed to a rapid charge recombination. In this article, the influence on the fill factor of ZnO nanowire array cell is investigated and discussed by comparing dark current and decay rate of open circuit potential of the ZnO nanowire array cell with those of the ZnO nanoparticle cell, TiO₂ nanoparticle cell and TiO₂-coated ZnO nanowire array cell. The results demonstrate that the low fill factor of the ZnO nanowire array cell is largely caused by a rapid decrease of electron injection efficiency rather than a rapid charge recombination, which is decided by the absorption nature of Ru-complexed dye molecules on ZnO surface and repellency of radial electric field. The fill factor of the ZnO nanowire array cell can be improved by coating ZnO nanowires with a wide band gap semiconductor material or metal oxide insulator.     

Pulsed-laser deposition and characterization of ZnO nanowires with regular lateral arrangement

We report on the high-pressure pulsed-laser deposition growth of periodic arrays of free-standing single zinc oxide nanowires with uniform hexagonal arrangement and cross-section with thickness of less than 100 nm. In order to achieve the wire alignment, we prepared an ordered array of catalytic gold seed particles by a nanosphere lithography mask transfer technique using monodisperse spherical polystyrol nanoparticles. These templates were investigated by scanning electron microscopy and atomic force microscopy prior to nanowire growth. X-ray diffraction revealed the epitaxial relationships between the nanostructures and the a-plane sapphire substrate and excellent crystal quality. The optical properties of the ZnO nanowire arrays were measured by cathodoluminescence. PACS 61.82.Rx; 81.05.-t; 81.05.Dz; 81.10.-h     

水热合成ZnTe纳米粉的发光性能

利用Zn粉和Te粉为原材料,通过水热法在160℃下合成了ZnTe纳米粉,并用X射线衍射仪、x射线能谱仪、透射电子显微镜和显微Raman光谱对其进行了表征.X射线衍射谱表明合成的ZnTe具有闪锌矿结构.X射线能谱给出的结果表明合成的ZnTe中主要元素是Zn和Te,并含有杂质O.透射电子显微镜照片显示出合成的ZnTe纳米粉...     

Investigation of the super-long alumina nanowire array synthesized with a novel method

Alumina nanowire array standing on porous anodic alumina (PAA) membrane has been directly and efficiently synthesized in oxalic acid solution by one-step electrochemical anodic oxidation with changing anodic voltages. The morphology of the nanowires on PAA was observed by scanning electron microscopy (SEM). The different patterns on the surface of the sample were synthesized due to the reaction time. The fine structure of the patterns has shown that the pattern is composed of the alumina nanowire array and the morphologies of the patterns can mainly be attributed to the differences in the length of the alumina nanowires. The method of selected area electron diffraction (SAED) for transmission electron microscopy (TEM) has shown that these nanowires are amorphous. An etching model was given to explain the formation mechanism of the amorphous alumina nanowires.     

α-Fe纳米线阵列膜磁各向异性的穆斯堡尔谱研究

在具有纳米级孔洞的多孔氧化铝模板上,用电沉积方法成功地制备出α-Fe纳米线有序阵列组装膜.分别用透射电子显微镜(TEM)、穆斯堡尔谱仪(MS)和振动样品磁强计(VMS)对样品进行了测试分析.TEM和电子衍射的结果显示,阵列中的纳米线均匀有序,彼此独立,由一串α-Fe单晶磁性颗粒构成.VSM测试结果表明,这种纳米阵列结构具有高度垂直磁各向异性.当外磁场垂直磁化时,磁滞回线具有很高矩形比(0.98)和矫顽力(1.76×10⁵A/m).尤其MS的测试结果显示,阵列中的每根纳米线的总磁矩都沿 关键词：     

室温CdxZn1—xTe／ZnTe多量子阱光学双稳态的研究

研制了室温ＣｄｘＺｎ１－ｘＴｅ／ＺＮＴｅ多量子阱法布里－珀罗腔光双稳器件，并在该器件上观察到皮秒一级的室温激子光双稳。研究结果表明，ＣｄＺｎ１－ｘＴｅ／ＺｎＴｅ多量子阱光双稳器件的光双稳值和对比度分别为３６３ｋＷ／ｃｍ＾２和４：１。根据ＣｆｘＺｎ１－ｘＴｅ／ＺｎＴｅ多量子阱的吸收谱和激子非线性理论，归结了ＣｄｘＺｎ１－ｘＴｅ／ＺｎＴｅ多量子阱光双稳的主要非线性机理为激子的饱和和吸收。     

Sol–gel electrophoretic deposition and optical properties of Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowire arrays

Ordered Fe₂O₃ nanowire arrays embedded in anodic alumina membranes have been fabricated by Sol–gel electrophoretic deposition. After annealing at 600 °C, the Fe₂O₃ nanowire arrays were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and X-ray diffraction (XRD). SEM and TEM images show that these nanowires are dense, continuous and arranged roughly parallel to one another. XRD and SAED analysis together indicate that these Fe₂O₃ nanowires crystallize with a polycrystalline corundum structure. The optical absorption band edge of Fe₂O₃ nanowire arrays exhibits a blue shift with respect of that of the bulk Fe₂O₃ owing to the quantum size effect. PACS 78.67.Lt; 81.05.Je; 81.07.Vb     

Bi2Te3/Sb超晶格纳米线的外延生长和热电测量

通过脉冲电沉积,外延生长出小单元长度的Bi₂Te₃/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi₂Te₃/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.     

The synthesis of highly oriented GaN nanowire arrays

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com     

Diameter-dependent electrical transport properties of bismuth nanowire arrays

Single-crystalline bismuth nanowire arrays with different diameters were fabricated within porous anodic alumina membranes with the same pore size using the pulsed electro-deposition technique. X-ray diffraction measurements show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy analyses indicate that bismuth nanowire arrays are high filling, ordered and single-crystalline. Electrical resistance measurements show that the bismuth nanowires have a metal-semiconductor transition when the diameters decrease from 90 to 50 nm, and the resistance behaviors are explained on the basis of the quantum confinement effect and Matthiessen’s rule.     

Fabrication and characterization of Cu–CdSe–Cu nanowire heterojunctions

The Cu–CdSe–Cu nanowire heterojunctions were fabricated by sequential electrochemical deposition of layers of Cu metal and CdSe semiconductor within the nano-pores of anodic alumina membrane templates. X-ray diffraction reveals the cubic phase for Cu and hexagonal phase for CdSe in the electrodeposited Cu–CdSe–Cu nanowire heterojunctions. The composition of the nanowire heterojunction segments is characterized by energy dispersive X-ray spectroscopy. The morphological study of nanowire heterojunctions has been made using scanning electron microscope and high resolution transmission microscopy. The nanowire heterojunctions grown in 100 and 300 nm nano-pore size templates have been found to have optical band gaps of 1.92 and 1.75 eV, respectively. The absorption spectra of 100 nm nanowire heterojunctions show a blue shift of 0.18 eV. The collective nonlinear current–voltage (I–V) characteristics of the 300 and 100 nm nanowire heterojunctions show their rectifying and asymmetric behaviour, respectively.     

THz Generation by Optical Rectification and Competition with Other Nonlinear Processes

We present a study of the competition between tera-hertz （THz） generation by optical rectification in （110） ZnTe crystals, two-photon absorption, second harmonic generation and free-carrier absorption. The two-photon nonlinear absorption coefficient, second harmonic generation efficiency and free-carrier absorption coefficient in the THz range are measured independently. The incident pump field is shown to be depleted by two-photon absorption and the THz radiation is shown to be reduced, upon focusing, by free-carrier absorption. The reduction of the generated THz radiation upon tight focusing is explained, provided that one also takes into account diffraction effects from the sub-wavelength THz source.     

Preparation, structure and photo-catalytic performances of hybrid Bi2SiO5 modified Si nanowire arrays

Bi₂SiO₅ modified Si nanowire array films were fabricated as photo-catalysts via dip-coating Bi(NO₃)₃ on silver-assisted electroless wet chemical etching Si nanowires and subsequently annealing. The structures and morphologies of as-prepared samples are characterized by X-ray diffraction, Fourier transform infrared spectrum, scanning electron microscopy and transmission electron microscopy. The results of photocatalytic experiments indicated that the Bi₂SiO₅ modified Si nanowire arrays benefit the improvement for efficient electron-hole separation and photo-catalytic stability, thereby possessing superior photo-degradation performance. These hybrid nanowire arrays will be promising materials for photo-catalysts and degradation agents.