开放简并二能级原子系统F_g=2F_e=1跃迁中的量子相干效应

文章分析了满足Fg=2Fe=1跃迁的开放简并二能级原子系统在磁场作用下的量子相干效应。该模型中,驱动场的偏振方向平行于磁场方向且与探针光偏振方向相互垂直。由于驱动场和塞曼分裂对原子的耦合作用,在不同驱动场拉比频率作用下将会分别出现电磁诱导透明(EIT)和电磁诱导吸收(EIA)效应,同时伴随相应的正常色散和反常色散。通过控制驱动场强度可以有效控制系统的量子相干效应,同时实现光速调控。     

含多种玻璃生成体氧化物玻璃的振动光谱和结构

本文报导了以下三种含多种玻璃生成体氧化物玻璃系列的喇曼光谱和红外光谱:Ⅰ.SiO_2、P_2O_5-SiO_2、GeO-SiO_2以及GeO-P_2O_5-SiO_2。Ⅱ.15Na_2O·15BaO·10R_mO_n·60SiO_2、R_mO_n-B_2O_3、Al_2O_3、Ga_2O_3、SiO_2、GeO_2、TeO_2、Nb_2O_5。Ⅲ.以10％B_2O_3、GeO_2、TeO_2逐步代替15Na_2O·15BaO·70SiO_2中的SiO_2。注释了各振动峰值的相应的化学键振动方式,分析了在含碱金属和碱土金属氧化物玻璃中和在无碱和碱土金属氧化物玻璃中GeO_2和TeO_2的不同结构状态,指出含Al_2O_3玻璃的结构是均匀的,而含B_2O_3玻璃的结构是不均匀的.     

太赫兹量子级联激光器频率梳的色散

群速度色散会限制太赫兹量子级联激光器频率梳的稳定以及频谱宽度.对于太赫兹量子级联激光器频率梳,其色散主要由器件增益、波导损耗、材料损耗引起.研究基于4.2 THz量子级联激光器双面金属波导结构,通过建立德鲁德模型,利用有限元法计算了激光器的波导损耗;器件未钳制的增益由费米黄金定则计算得到,结合增益钳制效应,计算了器件子带电子跃迁吸收以及镜面损耗,得到了器件钳制后的增益;利用Kramers-Kronig关系得到了器件的增益、波导损耗、材料损耗引起的色散,结果表明器件的激射区域存在非常严重的色散(–8×10~5—8×10~5 fs~2/mm).同时,计算了一种基于Gires-Tournois干涉仪结构的色散,结果表明,该结构的色散具有周期性,可以用于太赫兹量子级联激光器的色散补偿.     

基于耦合场量子受激拉曼散射的太赫兹波辐射

使用两块长度各为65 mm的MgO:LiNbO3和无掺杂LiNbO3晶体,以1064nm的Q开关Nd:YAG激光器作为抽运光源,在12 mJ/pulse的抽运光能量下得到频率范围为0.34～2.90 THz的电磁辐射.分析表明,激光入射使LiNbO3晶体中具有电磁特性的横光学声子可以和入射光子形成耦合场量子.作为一种电磁特性的元激发,LINbO3晶体的耦合场量子的辐射场频率覆盖部分太赫兹频段范围,并可通过耦合场量子受激拉曼散射过程辐射THz波.根据耦合场量子辐射理论,通过分析晶体的耦合场量子色散特性曲线,可以确定该晶体能否辐射THz波及其带宽范围.     

光纤色散与损耗对光量子密钥分发系统的影响

运用量子薛定谔方程，通过计算传输光场干涉强度和分析量子密钥分发系统的误码率，研究了光纤色散和损耗对量子密钥分发系统误码率的影响.研究表明，在目前的基于光纤的量子密钥分发系统中，选择色散位移光纤并以损耗最小波长1.55 μm为工作波长，同时缩短脉冲宽度，可以有效提高量子密钥系统的传输距离. 关键词： 量子保密通信 量子密钥分发 光纤色散 光纤损耗     

Ag@SiO_2耦合结构设计及其对薄膜太阳电池的响应调控

Ag@SiO_2纳米耦合结构同时具有等离激发和衍射散射特性,可有效调控光波的行进路径和能量分布,在薄膜太阳电池陷光领域极具潜力.本文基于时域有限差分方法和严格耦合波分析,建立三维电磁仿真模型,研究Ag@SiO_2耦合结构对非晶硅电池光谱响应的调控机理,通过优化设计,得到高陷光电池器件.结果表明:当Ag和SiO_2特征尺寸分别为18和150 nm时,共振波和衍射波达到最优耦合,通过耦合结构进入电池响应层的透射光谱最大,相应量子效率显著增强.与同尺寸的平面电池相比,其光电转换效率从7.19%提高到7.80%,相对提高了8.48%.     

三共振II类倍频过程中基频场的纠缠特性研究

本文理论分析了三共振II类倍频的竞争性非线性过程中基频场的量子起伏与量子纠缠特性.计算了运转于阈值以上和阈值以下两种情况下平均场随损耗、泵浦参数的变化关系,运转于阈值以上时内腔额外损耗会引起本征模输出的不平衡.给出了正交分量的关联噪声随输出耦合效率,泵浦参数和归一化频率的变化关系.在阈值附近可获得近乎完美的量子纠缠态,在阈值以上一定的范围内,可获得一定程度的明亮纠缠态光场(当忽略内腔损耗,σ=8时VoutX1+X2VoutY1-Y2《0.6).     

阶梯槽交错双栅慢波结构高频特性理论和模拟

本文基于一种阶梯槽交错双栅周期慢波结构模型,获得了该结构中的电磁场分布公式.通过场匹配方法,求出了该结构的高频色散方程和耦合阻抗表达式.以W波段行波管用的阶梯槽交错双栅为例,利用本文公式和CST-MWS电磁软件比较计算了色散和耦合阻抗特性,分析了阶梯尺寸参数对高频特性(基模色散、+1次空间谐波归一化相速和耦合阻抗)的影响.结果表明,理论和CST-MWS软件模拟有很好的一致性;相对矩形交错双栅,改善了色散特性,拓展了基模带宽,同时具有足够大的耦合阻抗和适合工程应用的机械强度,在一定程度上可以弥补矩形交错双栅周期慢波结构的不足.     

掺E~(3+)石英光纤中频率上转换的实验研究

首次报道了实验研究连续1064nm激光泵浦的掺Er~(3+)石英光纤中频率上转换过程.测量了Er~(3+)/GeO_2/SiO_2和Er~(3+)/Al_2O_3/GeO_2/SiO_2两种光纤发射的可见荧光谱,并用Er~(3+)离子的双光子吸收和受激态吸收过程解释了频率上转换现象.     

1.2到1.8μm光波导材料的光学性质

本文将评述三种损耗机制,并报导至今为止已经获得的最好衰减结果,分析瑞利散射、O-H吸收带和红外吸收边与组分之间的关系。玻璃成分也影响波导玻璃的折射率色散,将用可采用的折射率数据来讨论关于波导设计的折射率色散,为说明这些效应的重大意义,也将引用相关波长带宽测量。     

Polar optic phonons in Hg2Cl2 and Hg2Br2

Far infrared (30–430 cm^?1) reflectivity measurements of Hg₂Cl₂ and Hg₂Br₂ single crystals have been performed in polarized light. The spectra, which are in agreement with group-theoretical predictions, were analyzed by the oscillator fitting procedure and Kramers-Kronig method. The results are compared with the existing data from other measurements and the large anisotropy of polar modes is briefly discussed. The polarization vectors of all long-wavelength symmetry modes were determined group-theoretically.     

Electron density in Si2 and Cl2

Self consistent field-Xα molecular orbital calculations have been performed for Si₂ and Cl₂ using both the scattered-wave (SW) and LCAO discrete-variational (DV) versions of the method. For Si₂ an SW calculation including f partial waves yields orbital densities in good agreement with those from methods which do not involve the muffin-tin approximation for the potential. The present results afford a further comparison relevant to the recent discussion (see, M. Schlüter et al. [9]) of the relative accuracy of various pseudocharge densities compared with real charge densities. The deformation density from the Xα-SW calculation is in good agreement with that from the DV-Xα method and also with that from the linear muffin tin orbital method (J. Harris and R. O. Jones [8]). Differences between the valence electron distribution which is usually discussed in connection with pseudopotential schemes, and the density distribution including the 2s and 2p core electrons are delineated. For Cl₂, the Xα-SW deformation density shows positive lobes along lines through the atoms perpendicular to the bond axis, is negative for most of the area between the atoms and also shows negative lobes behind the atoms. This deformation map is in good qualitative agreement with the DV-Xα map and also with recent ab initio results with the exception of a small region at the centre of the bond in which the DV-Xα and ab initio results show an excess of electrons compared with the promolecule whereas the Xα-SW results show a deficiency. Comparisons with X-ray results on solid chlorine are inconclusive so that experimental electron scattering data on gas phase chlorine will be required to resolve this difference.     

Charge transfer in TlFeS2 and TlFeSe2

The temperature dependences of the conductivity and the thermoelectric coefficient in TlFeS₂ and TlFeSe₂ samples have been investigated in the temperature range 85–400 K. The variable-range hopping conduction has been established. It is found that the density of localized states N _F near the Fermi level is 1.7×10¹⁸ and 3.3×10¹⁸ eV^?1 cm^?3, and the average hopping length R is 109 and 104 Å for TlFeS₂ and TlFeSe₂, respectively. The non-Arrhenius (activationless) behavior of the hopping conductivity is established in the temperature region T<200 K for TlFeS₂ and T<250 K for TlFeSe₂.     

Linewidth and auger effect in CaF2, SrF2, and BaF2

In BaF₂ crystals, the linewidth of certain core band-conduction band excitons shows strong temperature dependence, while the corresponding linewidths in CaF₂ and SrF₂ do not. Calculations of the broadening due to the temperature-independent Auger effect are in good agreement with experimental data.     

Peak effect studies in single crystals CeRu2 and 2H-NbS2

We have studied the peak effect (PE) phenomenon in single crystals of weakly pinned superconductors CeRu₂ and 2H-NbS₂. 2H-NbS₂ is iso-structural and iso-electronic to 2H-NbSe₂, whose similarity with CeRu₂ as regards the PE representing the order-to-disorder transformation of the flux line lattice was claimed some time ago. We report on the step change in equilibrium magnetization across the peak effect in CeRu₂. We also present the vortex phase diagram of 2H-NbS₂ obtained from the magnetization data, and compare the PE phenomenon in 2H-NbS₂ and 2H-NbSe₂.     

Spin fluctuation effects in substituted CeRu2Si2 and YbPd2Si2 alloys

Effects of chemical substitution in CeRu₂Si₂, a well-studied heavy fermion system and YbPd₂Si₂ have been investigated through magnetic susceptibility and x-ray diffraction in the systems CeRu _x Si₂, CeRu_2−x Os _x Si₂, CeRu₂Si_2−x Ge _x and YbPd₂Si_2−x Ge _x . Replacing silicon by germanium generates normal chemical pressure effect, namely, Ce and Yb atoms in CeRu₂Si₂ and YbPd₂Si₂ became more and less magnetic respectively. With increasing Ge concentration, CeRu₂Si_2−x Ge _x exhibits larger susceptibility at low temperature, goes to an antiferromagnetic state and finally becomes ferromagnetic. In YbPd₂Si_2−x Ge _x , increasing Ge concentration drives Yb atoms to more divalent state. Electronic effects are more pronounced in CeRu_2−x Os _x Si₂ though CeRu₂Si₂ and CeOs₂Si₂ have very nearly the same lattice parameters. It is conjectured that CeRu₂Si_2−x Ge _x may be the first Ce-based heavy fermion having a magnetic ground state. The authors felicitate Prof. D S Kothari on his eightieth birthday and dedicate this paper to him on this occasion.     

Infrared intensity analysis of CH2Cl2 and CD2Cl2 in vapour and liquid states

In the infrared spectra of molecules with more than one C-H bond the symmetric and antisymmetric stretching bonds often overlap, causing uncertainty in the intensity analysis. For CH₂Cl₂ and CD₂Cl₂ in the vapour state, the two bands overlap to such an extent that Straley who takes it as one band attributes it to antisymmetric stretching while Saekiet al assign it to the symmetric stretching. Following the method of analysis initiated in this laboratory, we have solved this problem by ultimately obtaining intensities separately forA ₁ andB ₂ species. The band is mostly due to the symmetric stretching, 0.06 out of the total of 0.31 contributing toB ₂. Thus, this gives a method of separating the intensities of bands which are highly overlapping. Presented at the Symposium on Crystallography and Crystal Physics, Osmania University, Hyderabad held on 5–7, December 1977.     

Double-Q magnetic structures and strong planar anisotropy in tetragonal ErRu2Ge2and ErRu2Si2

Single crystal magnetization measurements and powder neutron diffraction on tetragonal ErRu₂Ge₂ as well as anisotropy of the paramagnetic susceptibility and specific heat measurements on ErRu₂Si₂ are presented. Besides the huge crystal field contribution to the uniaxial anisotropy, which favors the basal plane, a strong in-plane anisotropy is evidenced. From these features and neutron diffraction experiments it is shown that magnetic structures of these materials are double-Q and accordingly non-colinear below their Néel temperature (5.2 and 6.0 K for Ge and Si based compounds, respectively). The magnetic structures induced during the metamagnetic processes are discussed. Received 24 December 1999     

Exciton states in CaF2, SrF2, and BaF2

We have applied the pseudopotential theory to the calculation of exciton states and binding energies for the ionic crystals CaF₂, SrF₂, and BaF₂, using a transfer model. Because of the satisfying agreement between our results and the experimental data in each case, we assume this pseudopotential formalism will describe transfer exciton states and energies in other ionic crystals.     

Resistivity anisotropy and charge density wave in 2H - NbSe2 and 2H - TaSe2

The in-plane and out-of-plane resistivities of both 2H-TaSe₂ and 2H-NbSe₂ were determined down to 10 K. For both compounds, the resistivity anisotropy shows notably a slope change at temperatures where a CDW transition is expected to occur. On the other hand, for both compounds the resistivity anisotropy at the lowest temperature of measurement is much greater than expected by the Lawrence–Doniach model, which relates the critical magnetic field anisotropy to the normal state resistivity anisotropy for 3D-anisotropic superconductors.