氙激光等离子体的双电子复合过程研究(英文)

在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍氙的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化.     

类氢类氦类锂镁离子双电子复合的旁观电子角动量研究

类氢类氦类锂镁离子经中间双激发态进行的双电子复合过程在研究惯性约束聚变电子温度中占有很重要的地位.用准相对论方法计算了双电子复合经不同Rydberg态跃迁通道的复合速率系数,并给出不同离化度离子的双电子复合速率系数随电子温度的变化规律.显示出离子的相关能对峰值的电子温度有很大影响,当类氢离子跃迁通道的旁观电子角动量为1时双电子复合系数最大,而类锂离子是旁观电子角动量为3时最大. 关键词： 双电子复合 镁离子 角动量     

Ni27+离子Ka和Kβ型衰变的双电子复合速率系数的计算

用HFR波函数对低密度类氢Ni27+等离子体与电子相互作用的KLn和KMn共振激发的双电子复合过程进行了细致的理论计算研究.根据可能的重要辐射衰变通道,分析了Ni27+等离子体Ka型和Kβ型辐射衰变的双电子复合速率系数随旁观电子主量子数n和轨道角动量量子数1与电子温度的变化行为,计算了Ni27+等离子体双电子复合过程的总速率系数.研究结果表明,在低密度条件下,Ka型和Kβ型辐射衰变的分支双电子复合速率系数与旁观电子主量子数n和轨道角动量量子数1有重要关系,前者的分支速率系数远大于后者.     

镁铝类氢类氦类锂离子双电子复合速率研究

 镁铝类氢类氦类锂离子经中间双激发态进行的双电子复合过程在用双示踪元素谱线强度比研究ICF电子温度中占有很重要的地位。计算了双电子复合经不同Rydberg态跃迁通道的复合速率系数，并给出不同离化度的总的双电子复合速率系数的变化规律，比较了它们在不同电子温度和不同跃迁通道的异同，对研究X射线激光、等离子体温度诊断等诸多应用领域提供了有价值的原子数据。     

基于双激发态对稠密等离子体中双电子复合速率系数的研究

讨论了稠密等离子体中双电子复合速率系数的计算方法,推导出了在双激发态间跃迁过程和关于双激发态的碰撞电离和自电离过程的影响下双电子复合速率系数作为关于电子密度函数的计算公式,并以类氖镍离子为例进行了计算.计算结果展示了双电子复合速率系数随电子密度增大的具体变化趋势.此外,还给出了在不同原子过程影响下双电子复合速率系数的数据,并进行了分析.     

Li-like镁等离子体X射线光谱模拟

利用碰撞辐射平衡和离化平衡下的等离子体X射线发射谱理论,对镁元素等离子体在中低电子密度、中高电子温度范围内,以碰撞激发、共振激发、离化、辐射复合和双电子复合等动力学过程为主的Mg10 、Mg9 和Mg8 三离子体系X射线谱进行了理论模拟,得到其X射线光谱,反映出X射线辐射谱波长、强度同电子温度之间的关系,得到了等离子体诊断所关心的电子温度的定性关系.     

Ni27+ 离子Kα和Kβ 型衰变的双电子复合速率系数的计算

用HFR波函数对低密度类氢Ni²⁷⁺等离子体与电子相互作用的KLn和KMn共振激发的双电子复合过程进行了细致的理论计算研究.根据可能的重要辐射衰变通道，分析了Ni²⁷⁺等离子体Kα 型和Kβ 型辐射衰变的双电子复合速率系数随旁观电子主量子数n和轨道角动量量子数l与电子温度的变化行为，计算了Ni²⁷⁺等离子体双电子复合过程的总速率系数.研究结果表明，在低密度条件下，Kα 型和Kβ型辐射衰变的分支双电子复合速率系数与旁观电子主量子数n和轨道角动量量子数l有重要关系，前者的分支速率系数远大于后者. 关键词： 27+离子')" href="#">Ni²⁷⁺离子 Kα型和Kβ型辐射衰变')" href="#">Kα型和Kβ型辐射衰变 双电子复合 速率系数     

金激光等离子体冕区电离态特性研究

 提出一种测量金激光等离子体电荷态分布与平均电离度的X射线光谱学诊断方法。该方法基于稳态碰撞-辐射近似，考虑电子离子直接碰撞激发与双电子复合两种激发态布居方式，建立了金M带5f-3d跃迁组辐射总强度与离子态分布的耦合方程。根据实验测量的金平面靶激光等离子体冕区辐射的5f-3d跃迁线系的强度分布，诊断得到了金激光等离子体的电荷态分布与平均电离度。此外，还分析了电子温度、电子密度以及双电子复合过程对电荷态分布及平均电离度诊断的影响，并将实验诊断结果与辐射流体力学理论模拟结果及离化平衡动力学计算结果进行了对比分析。结果表明：实验诊断结果与基于CRE近似的离化平衡动力学计算结果近似；当电子温度高于1.5 keV时，双电子复合过程对电离度的诊断结果影响较小。     

金等离子体的荷态分配数的计算

在非局域热动力学平衡(Non-LTE)下,采用类氢近似,计算得出电子密度分别为6.0×10~(20) cm~(-3)、1.4×10~(21) cm~(-3)、1.0×10~(22) cm~(-3)和1.7×10~(22) cm~(-3)的条件下的三体复合、辐射复合、双电子复合系数随电子温度的变化,得出总的复合系数随电子温度的变化关系;结合相关的电离系数得出相应的离子占有数的比,最后,计算出一定电子密度和温度条件下Au~(48+)～Au~(52+)离子的离子丰度,从而得到金等离子体的荷态分配数与电子温度和电子密度的关系.     

高电荷态氪离子双电子复合过程的理论研究

本采用相对论的Flexible Atomic Code(FAC)程序计算类氯Kr^34 离子双电子复合的截面及速率系数，其中用n^-3标度律对速率系数作了外推。中我们还讨论了辐射分支比随不同共振峰的变化以及级联辐射的影响。     

The dielectronic recombination process in laser-produced Au plasmas

The calculations of the rate coefficients for dielectronic recombination (DR) along the NiI isoelectronic sequence in the ground state Au^{51+} through Cu-like 3d^9nln′f (n,n′=4,5,6) inner-shell excited configurations are performed using the spin-orbit-split array (SOSA) model. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The trend of the DR rate coefficients and the ratio of dielectronic satellite lines intensities with the change of the electron temperature are discussed.     

The effect of configuration complex on dielectronic recombination process in highly ionized plasmas

This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.     

Re30+离子双电子复合速率系数的理论研究

复杂结构离子的双电子复合速率系数在极紫外光刻光源、核聚变等应用研究的等离子体光谱模拟和诊断中具有重要的应用价值。利用全相对论组态相互作用方法,详细计算了基组态为4p64d9的Re30+离子经双激发态（4p64d9）-1nln'l'（n=4~6,n'=4~23）的双电子复合（DR）过程。研究分析了激发、辐射通道,组态相互作用,级联退激对DR速率系数的影响。其中内壳层4p电子激发的DR速率系数是总DR速率系数的28.2%~44.9%,所以内壳层4p电子激发的贡献不可以忽略。级联退激对DR速率系数的最大贡献为12.9%,也必须要予以考虑。通过对双电子复合、辐射复合、以及三体复合速率系数的比较,辐射复合速率系数的最大值为DR速率系数的22.6%,三体复合速率系数的最大值仅为DR速率系数的0.3%。因此,DR速率系数远远大于辐射复合和三体复合速率系数。该结果表明DR过程对于等离子体离化态分布、能级布居以及光谱模拟都极为重要。为了方便应用,对基态和第一激发态的总DR速率系数进行了参数拟合。该研究结果将为Re激光等离子体的光谱模拟及复杂结构离子DR过程的进一步研究提供参考。Dielectronic recombination (DR) rate coefficients of complex ions are very important in some application research, such as extreme ultraviolet lithography and nuclear fusion. Based on the fully relativistic configuration interaction method, theoretical calculations are carried out to research the DR processes, in which Re30+ ions in the ground state 4p64d9 to (4p64d9)-1nln'l'(n=4~6, n'=4~23). Influence of excitation and radiation channels, configuration interaction, the effect of decays to autoionizing levels possibly followed by radiative cascades (DAC) are analyzed. The contributions through 4p subshell excitations to the total rate coefficient are 28.2%~44.9% in the whole temperature region. Hence the contributions from inner-shell electron excitation are very important. The contributions from the DAC transitions increase smoothly with the increasing temperature and are about 12.9% at 50 000 eV. The contributions of DAC can not be neglected. By means of compared total DR rate coefficients to radiative recombination rate coefficients and three-body recombination rate coefficients, it shows that the maximum value of the radiation recombination rate coefficient is 22.6% of the DR rate coefficient and the maximum value of the three-body recombination rate coefficient is only 0.3% of the DR rate coefficient. The total DR rate coefficient is greater than either the radiative recombination or three-body recombination coefficients in the whole temperature range. The corresponding DR process is very important for plasma ionization distribution, population level and spectrum simulation. In addition to facilitate the application, the total DR rate coefficients for the ground state and the first excited state are fitted to an empirical formula. These results will provide the reference for the further analyses of rhenium laser plasma spectrum simulation and the complex structures ions DR process.     

W44+ 离子双电子复合速率系数的理论研究

利用全相对论组态相互作用方法,详细研究了W44+ 离子从基组态3s23p63d104s2俘获一个电子形成双激发态(3s23p63d104s2)nln′l′(n = 4 ~ 6,n′= 4 ~7) 的双电子复合(DR) 过程。通过比较不同壳层电子激发的DR 速率系数,得知4s 电子激发和3d 电子激发的DR 速率系数分别在低温和中高温度时给出了主要贡献,得到了主要的电子激发DR通道。在1 eV~50 keV 温度范围内,计算了n = 4~18 的DR速率系数,并外推到了n= 100,得到总DR 速率系数。比较总DR 速率系数、三体复合(TBR) 以及辐射复合(RR) 速率系数,结果表明DR 速率系数在研究的温度范围内远大于TBR 和RR 速率系数,其将明显地影响ITER 等离子体的电离平衡和离化态布居。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out to research the dielectronic recombination (DR) processes, in which W44+ ions in the ground state 3s23p63d104s2 trap an electron to form doubly excited states (3s23p63d104s2)nln’l’(n =4~6,n′= 4~7). The comparison of the DR rate coefficients of different shells shows that DR approach is as follow: the 4s subshell excitation dominates to DR at low temperature, but 3d subshell excitation attributes to DR at high temperature. Total DR rate coefficients from n=4~18 are evaluated directly, and the results are extrapolated up to n = 100 in the temperature range from 1 to 5×104 eV, and thus get the total DR rate coefficients. Compared total DR rate coefficients to three-body recombination (TBR) rate coefficients and radiative recombination (RR) rate coefficients, it showed that the total DR rate coefficients obviously significantly greater than other two recombination rate coefficients, and thus it obviously influence ionization equilibrium and ionization state population of ITER plasma.     

Dielectronic recombination rate coefficient for Cu-like Au^50＋ ion

The rate coefficients α^{DR} of dielectronic recombination (DR) for Cu-like Au^{50+} ion collided with the incident free electron are calculated based on the quasi-relativistic multi-configuration Hartree－Fock theory. The results clearly show that the α^{DR} of all recombination channels exhibits resonance characters with electron temperature. At lower temperatures, the recombination for electrons caused by 4s excitation is dominant through outer electron radiative transitions among the intermediate doubly excited autoionizing levels, in which the most components come from 3d^{10}5pns states, whereas with increasing electron temperature, DR caused by 3d excitation turns out to be dominant, and the contribution from the 3d^94s4fnf state to the total rate coefficient of electron 3d is the largest with α^{DR}=1.15×10^{- 11} cm^3·s^{-1} at an electron temperature of T_e=0.35 keV. Under this condition, there exists a strong competition between the two types of recombination channels.     

Xe8+离子双电子复合速率系数的理论研究

利用基于全相对论组态相互作用理论的FAC程序包, 详细研究了温度在0.1~1650 eV范围内Xe8+离子的双电子复合(DR)过程。 通过比较4s, 4p和4d壳层电子激发的双电子复合速率系数, 发现温度在10 eV以上时, 内壳层4p电子激发的双电子复合速率数对总双电子复合速率系数有很重要的贡献, 而4s电子激发对总双电子复合速率数贡献小于7.5%。 给出了△n=0, 1和2 三类芯激发对总双电子复合速率系数的贡献以及自由电子俘获到不同主量子数的双电子复合速率系数, 发现△n=2的芯激发和n′＞15的DR速率系数对总DR速率系数的贡献也很重要。 进一步给出了△n=0, 1和2 三类芯激发和总DR速率系数的拟合参数, 拟合结果和计算值符合, 偏差小于1%。 通过对双电子复合、 辐射复合以及三体复合速率系数的比较得知, 在温度高于1 eV时, DR过程是Xe8+离子的主要复合过程。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′＞15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and three body recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas.     

类铷W37+离子双电子复合速率系数的理论研究

 利用全相对论组态相互作用理论方法,研究了类铷W³⁷⁺离子从基组态3s²3p⁶3d¹⁰4s²4p⁶4d经过双激发态(3s²3p⁶3d¹⁰4s²4p⁶4d)^-1nln′l′(n,n′=4,5)的双电子复合过程,得到了该离子在温度为1~5×10⁴ eV范围内的总双电子复合速率系数。分析比较了不同电子激发的双电子复合速率系数,结果表明:4p电子激发的双电子复合速率系数在低温时给出了主要贡献,而3d的贡献在高温时突出。由于强组态相互作用,两电子一光子跃迁对双电子复合速率系数的贡献不可忽略,其中辐射跃迁4p⁵4d5d5f-4p⁶4f5d的贡献是双激发态4p⁵4d5d5f总的双电子复合速率系数的5%。对双电子复合、辐射复合以及三体复合速率系数的比较表明,在所研究的温度范围内双电子复合速率系数最大。     

Dielectronic recombination rate coefficients of Ni-like barium and tungsten

Ab initio calculations of the total dielectronic recombination (DR) rate coefficient of Ni-like barium () and tungsten () in the ground state have been performed using the HULLAC atomic code package. Resonant and nonresonant stabilizing radiative transitions are included. Collisional transitions following electron capture are neglected. The present level-by-level calculations include the DR contributions of all of the levels (over 17000) in the Cu-like inner-shell excited configurations 3d ⁹ 4ln'l' (), 3p ⁵ 3d ¹⁰ 4ln'l' (), and 3s3p ⁶ 3d ¹⁰ 4ln'l' (). For both ions, the configuration complexes with a hole in the 3p inner shell contribute almost 10% to the total DR rate coefficient, while the complexes with a hole in the 3s inner shell contribute about 1%. The converging contributions of the 3d ⁹ 4ln'l' (n' > 9) configurations are evaluated by applying the complex-by-complex extrapolation method and are found to comprise up to about 20% of the total DR rate coefficients throughout a wide electron temperature range. The total DR rate coefficients are fitted to an easy-to-use analytic expression which reproduces the original data with an accuracy of about 2% or better in a very wide temperature range. Received: 1 February 1999     

Au~(34+)离子双电子复合过程的理论研究

复杂结构离子的双电子复合(DR)速率系数在核聚变、极紫外光刻光源等应用研究的等离子体谱模拟中具有重要的价值.利用基于全相对论组态相互作用理论的FAC程序包,详细计算了Au~(34+)离子的双电子复合速率系数.研究分析了激发、辐射通道,组态相互作用,级联退激对DR速率系数的影响.其中,级联退激对DR速率系数的贡献必须予以考虑.对双电子复合、辐射复合以及三体复合速率系数做了比较,在温度大于1 eV范围,双电子复合都大于辐射复合以及三体复合速率系数,相应的DR过程对于等离子体离化态分布和能级布居以及光谱模拟都极为重要.对基态和第一激发态的DR速率系数进行了参数拟合,拟合值与计算值的偏差小于1.73%.研究结果将为复杂结构离子双电子复合过程的进一步研究提供参考.