Exciton polaritons in monoclinic zinc diphosphide

A classical theory based on excitons is insufficient to explain the reflectivity spectra of βZnP₂. Instead an exciton polariton picture is invoked and the polariton parameters are determined. Photoluminescence spectra are consistent with the polariton interpretation. Higher energy states of the exciton have been observed and from these the band gap and exciton binding energy in βZnP₂ have been deduced.     

High-energy frenkel cation exciton and specific features of its self-trapping in the CdI<Subscript>2</Subscript>-PbI<Subscript>2</Subscript> crystal system

It has been shown using atomic-force microscopy that the PbI₂ impurity is embedded in the CdI₂ crystal lattice in the form of nanocrystalline inclusions. The model of a high-energy cation exciton related to the ³ P ₂ state of a free Pb²⁺ ion has been considered for the impurity absorption (excitation) band at 3.23 eV. The resonance narrow photoluminescence bands with the split absorption band at 3.12 and 3.20 eV have been compared with the emission of a free Frenkel exciton. It has been demonstrated that, in the temperature range 25–45 K, there arises a self-trapped exciton state, and the main role in its formation is played by the bending vibrations of the CdI₂ crystal lattice. The potential barrier separating the self-trapped state from the free exciton is 23 meV. The photoluminescence band at 2.4 eV is assigned to the emission of the self-trapped high-energy cation exciton of PbI₂ in the CdI₂ crystal lattice.     

有机-无机杂化钙钛矿自组装量子阱结构的能带调控和光电性能的研究

有机-无机杂化钙钛矿材料具有分子尺度上调节能带结构的特点,在光、电、磁等领域均表现出了优异的性能.通过简单的旋涂方法,成功的制备了具有不同无机层层数的杂化钙钛矿材料(C₆H₁₃NH₃)₂(CH₃NH₃)_n-1Pb_nI_3n+1 (简写为C₆Pb关键词： 杂化钙钛矿 量子阱 带隙 光电性能     

Synthesis, structural and optical properties of a novel bilayered organic-inorganic perovskite C5Pb2I5

Single crystals of [C₅H₁₁NH₃]Pb₂I₅, abbreviated C₅Pb₂I₅, have been prepared. This compound is a new member of the family of the bilayered organic-inorganic lead-iodide based perovskites. Its crystal structure has been determined by X-ray diffraction. The inorganic sub-lattice consists of periodic bilayers of iodoplumbate octahedra. Each PbI₆ octahedra exhibits both edge- and corner-sharing with adjacent octahedra. The vibrational properties of this compound have been studied by Raman scattering spectroscopy. Optical absorption, photoluminescence and diffuse reflectance measurements have been performed. The room-temperature bandgap and free exciton absorption bands are observed at 2.46 and 2.23 eV, respectively. The exciton binding energy is 230 meV which is the largest value ever reported till date for the bilayered PbI based perovskites. Calculations assuming Wannier-type quasi-two-dimensional excitons and taking into account the image potential of the exciton charges showed that nearly 64% of the exciton binding energy is due to the dielectric confinement effect.     

Donor-like excited states of exciton bound to neutral acceptor in ZnTe

Photoexcitation spectroscopy has been used to study the excited states of the neutral c-acceptor bound exciton complex A^c₁ in ZnTe. We have detected four excited states at ～ 11.2 meV above the bound exciton ground state. Zeeman effects on these excited states have also been studied. The results show that they correspond to excitations of the bound electron to donor-like 2p and 2s orbital states. This represents an unambiguous experimental evidence of the pseudo-donor model previously suggested by Rühle and Bimberg for acceptor bound exciton complexes when m_e ? m_h.     

Electromodulation spectroscopy of excitons: High field regime

The effects of electric field on excitons have been investigated experimentally by means of electroabsorption (EA). The behavior of excitons with ionization fields F_I of the same order of magnitude as or smaller than typical applied fields is reported. EA spectra associated with excitons in TlBr, PbI₂, BiI₃, trigonal Se, and α-monoclinic Se will illustrate this case. In this situation the EA signal arises principally from the effect on the exciton ground state, and no finer structure could be detected. The exciton ground state undergoes a shift to higher energies with the applied field. Characteristic dependences with field of the sizes, energy position of the peaks, and zero crossing points of the EA signals have been found. Estimates of exciton parameters can be readily obtained from the EA spectra. Unusual features of the exciton EA spectra PbI₂ are discussed. Qualitatively, at least, theoretical predictions are obeyed.     

Electronic absorption spectrum of Cs<Subscript>2</Subscript>ZnI<Subscript>4</Subscript> thin films

The absorption spectrum of Cs₂ZnI₄ thin films in the energy range 3–6 eV at temperatures from 90 to 340 K has been investigated. It is established that this compound belongs to direct-gap insulators. Low-frequency exciton excitations are localized in ZnI₄ structural elements of the lattice. Phase transitions at 280 K (paraelectric phase ? incommensurate phase), 135 K (incommensurate phase ? monoclinic ferroelastic phase), and 96 K (monoclinic phase ? triclinic ferroelastic phase) have been found from the temperature dependences of the spectral position and halfwidth of the low-frequency exciton band. Additional broadening of the exciton band is observed for ferroelastic phases; it is likely to be due to exciton scattering from strain fluctuations near domain walls.     

Size dependence of ground-state energy of the excitons in spherical Y2O3

The exciton energies of rare earth oxides (Ln₂O₃) have rarely been calculated by the theory. Experimentally, the blue-shift of exciton energy in nanocrystals deviates from the traditional size confinement effect. Herein, the dependence of the ground-state energy of an exciton in Y₂O₃ spheres on particle radius was calculated by using a variational method. In the model, an exciton confined in a sphere surrounded by a dielectric continuum shell was considered. The ground-state energy of exciton comprises kinetic energy, coulomb energy, polarization energy and exciton–phonon interaction energy. The kinetic and coulomb energy were considered by the effective mass and the dielectric continuum and the exciton–phonon interaction energy was given by the intermediate coupling method. The numerical results demonstrate that the present model is roughly consistent with the experimental results. The confinement effect of the kinetic energy is dominant of the blue-shift of the exciton energy in the region of R < 5 nm, while confinement effect of the coulomb energy is dominant of the blue-shift of the exciton energy in the region of R > 5 nm. The polarization energy contributes largely to the exciton energy as the particle size is smaller than ~ 10 nm, while the exciton–phonon interaction energy takes only a little contribution in all the range.     

Lifetimes of bound excitons in CdSe

Lifetime measurements have been made on bound excitons in CdSe, by using the time-correlated single photon counting and a cw mode-locked dye laser. The lifetimes of the T₂ (an exciton bound to a neutral donor) and I₁ (an exciton bound to be a neutral acceptor) bound excitons have been determined to be 0.50±0.05 and 0.80±0.05 ns, respectively. These values are in good agreement with those predicted by the model of Rashba and Gurgenishvili.     

Excitons in monoclinic zinc diphosphide. Longitudinal exciton and the mixed mode

Exciton absorption spectra in high-quality β-ZnP₂ single crystals have been investigated at T=1.7 K for various directions of the wave vector and various polarization states of the radiation. It has been unambiguously established that the additional high-energy A series, which in some works has been called a D series and ascribed to ZnP₂ crystals, of so-called “rhombic” symmetry,^1,8,10,11 is an intrinsic exciton of the β-ZnP₂ series. A mixed mode has been detected for the first time, and the energy of the longitudinal exciton has been determined. The selection rules for the exciton transitions have been analyzed by a group-theoretical approach, and the symmetry of the nS states of the single exciton has been established on the basis of the experimental data — Γ ₂ ⁻ (z). Fiz. Tverd. Tela (St. Petersburg) 41, 193–202 (February 1999)     

Exciton binding energy in a double quantum well: effect of the barrier shift

We have calculated the exciton binding energy in an Al _xGa_1 − x As  / GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton binding energy has been analysed. It has been observed that this shift induces significant changes of the exciton binding energy—even several meVs in the case of very thin barriers.     

A study on the optical non-linearity near the band gap energy region of CuCl by the non-degenerate reflected four-wave mixing

We have demonstrated three beam non-degenerate reflected four-wave mixing (reflected FWM) in which two driving fields have the same photon energy (?ω₁) and the monitor and the resulting mixed light fields have another equal photon energy (?ω₂). Mixed light has been observed with the driving field's energy from Z₃ exciton up to band gap energy when ?ω₂ is fixed in the Z₃ and Z_1,2 exciton resonance region. The mechanism by which such non-degenerate optical non-linearity occurs is discussed according to a calculation by a simple model.     

Electronic excitations and luminescence of SrMgF4 single crystals

The electronic and crystal structures of SrMgF₄ single crystals grown by the Bridgman method have been investigated. The undoped SrMgF₄ single crystals have been studied using low-temperature (T = 10 K) time-resolved fluorescence optical and vacuum ultraviolet spectroscopy under selective excitation by synchrotron radiation (3.7–36.0 eV). Based on the measured reflectivity spectra and calculated spectra of the optical constants, the following parameters of the electronic structure have been determined for the first time: the minimum energy of interband transitions E _g = 12.55 eV, the position of the first exciton peak E _n = 1 = 11.37 eV, the position of the maximum of the “exciton” luminescence excitation band at 10.7 eV, and the position of the fundamental absorption edge at 10.3 eV. It has been found that photoluminescence excitation occurs predominantly in the region of the low-energy fundamental absorption edge of the crystal and that, at energies above E _g , the energy transfer from the matrix to luminescence centers is inefficient. The exciton migration is the main excitation channel of photoluminescence bands at 2.6–3.3 and 3.3–4.2 eV. The direct photoexcitation is characteristic of photoluminescence from defects at 1.8–2.6 and 4.2–5.5 eV.     

Features of the absorption spectra of thin films of M 2Ag1 − x CuxI3 solid solutions (M = Rb, Cs)

The absorption spectra of thin films of (MI)_{1 ? y} (Ag_{1 ? x} Cu_xI)_y solid solutions (M = Rb, Cs) with the initial molar concentration y = 0.33 have been investigated. It is established that, at low concentrations x, a local exciton band due to Cu⁺ ions is split off from the main long-wavelength exciton bands. In Rb₂Ag_{1 ? x} Cu_xI₃ solutions, the concentration shift of exciton bands indicates the formation of a persistent-type exciton spectrum. However, in Rb₂Ag_{1 ? x} Cu_xI₃ with x ≥ 0.5 and in Cs₂Ag_{1 ? x} Cu_xI₃ with x > 0.2, exciton spectra of amalgamation type are observed, which are related to the formation of more stable M ₃Ag_{2 ? 2x} Cu_2x I₅ solid solutions. The formation of these solutions leads to broadening of the exciton bands and to the concentration transition from persistent-to amalgamation-type exciton spectra.     

Anomalous luminescence of impurity-bound excitons in lithium borate crystals doped with cerium ions

The spectra and relaxation kinetics of the anomalous (?? < 10 ns) luminescence of Li₆GdB₃O₉:Ce³⁺ crystals have been experimentally detected. The time-resolved vacuum ultraviolet spectroscopy study has shown that optical transitions at 6.2 eV, caused by the transfer of an electron from the 4f ¹ ground state of Ce³⁺ to autoionizing states near the conduction band bottom of a crystal, lead to the formation of an impurity-bound exciton with the hole component localized on the 4f state of Ce³⁺ and the electron localized on states of the conduction band bottom. It has been found that the decay of such an exciton in Li₆GdB₃O₉:Ce³⁺ occurs through radiative recombination, leading to fast luminescence at 4.25 eV. The energy threshold for the formation of the impurity-bound exciton has been determined. The distribution functions of elementary relaxations over the reaction rate constants H(k), which determine the relaxation kinetics and luminescence quenching processes, have been calculated.     

Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

In the framework of perturbation theory, a variational method is used to study the ground state of a donor bound exciton in a weakly prolate GaAs/Ga_1−xAl_xAs ellipsoidal finite-potential quantum dot under hydrostatic pressure. The analytic expressions for the Hamiltonian of the system have been obtained and the binding energy of the bound exciton is calculated. The results show that the binding energy decreases as the symmetry of the dot shape reduces. The pressure and Al concentration have a considerable influence on the bound exciton. The binding energy increases monotonically as the pressure or Al concentration increases, and the influence of pressure or Al concentration is more pronounced for small quantum dot size.     

Temperature properties of exciton luminescence from CdTe quantum wells with different thicknesses in the CdTe/CdMnTe structure

The optical spectra of the CdTe/Cd_0.7Mn_0.3Te structure containing three CdTe quantum wells with nominal thicknesses of 16, 8, and 4 monolayers have been investigated. The temperature dependences of parameters of the exciton luminescence spectra (integrated intensity, full-width at half-maximum, position of the maximum, Stokes shift) for quantum wells with different thicknesses differ substantially. These differences are explained by a strong thickness dependence of the energy of Coulomb coupling in the exciton, the energy of localization of the exciton on bulges of the quantum well, and the degree of penetration of the exciton wave function into the barrier. At high excitation power densities, the emission contours of the quantum wells with thicknesses of 8 and 16 monolayers contain short-wavelength tails that correspond to optical transitions between excited quantum-well levels.     

Resonant Brillouin scattering via free and bound excitons in CdSe

We report resonant Brillouin scattering results in CdSe. Enhancements in Brillouin scattering have been observed at both the I₂ bound exciton and the free exciton. As a result of the spatial dispersion of the exciton-polariton, the Brillouin frequencies vary with the polariton energy. From this variation of the Brillouin frequencies, we deduced the following parameters in CdSe: transverse exciton frequency =14713 cm^?1, splitting between longitudinal and transverse exciton frequencies = 4cm^?1 and exciton effective mass (perpendicular to the c-axis) =0.40 times free electron mass. The Brillouin linewidths were found to vary with polariton energies in qualitative agreement with the theory of Brenig, Zeyher and Birman.     

Phase transitions in nonequilibrium electron-hole systems of Si/SiGe/Si nanoheterostructures

The exciton condensation in a Si_1?x Ge _x solid solution layer of Si/Si_1?x Ge _x /Si heterostructures with the formation of electron-hole liquid has been investigated by low-temperature photoluminescence spectroscopy. In the temperature range above the critical temperature of the transition from an exciton gas to electron-hole liquid, a Mott transition from an exciton gas to electron-hole plasma has been found and investigated.     

A study of non-thermalized luminescence spectra: the case of Cu2O

The emission spectra of a non-thermalized distribution of excitons in Cu₂O have been studied experimentally and theoretically. The emission spectra were found to exhibit interesting dependence on both the excitation frequencies and on the sample temperatures. These experimental results are explained quantitatively by a simple model calculation of the exciton distribution in Cu₂O under continuous excitation. Using this model the exciton non-radiative lifetime was deduced from the emission spectra. In addition, the present theory accounts for the lineshape of the resonant Raman peaks in Cu₂O more satisfactorily than the existing theory.