Observation of Excited State Species Due to He2 + and HgBr2 Collisions

Abstract

Emission spectra of HgBr (B-X) band system and atomic mercury lines have been observed during collisions involving HgBr₂ and He₂ ⁺ ions at different laboratory kinetic energies. Emission cross sections of the most intense band of the HgBr (B, v′=O ? X, v″=22) transition have been measured at different energies of the projectile ions.     

Spectroscopy and Kinetics of HgBr (B-X) Formation Due to Collisions of Helium Ions with Methyl Mercury Bromide Molecules

Abstract

Emission resulting from collisions of 100–1000 eV He· and He₂· ions with CH₃HgBr molecules has been characterized in the 244–580 nm region. Emission bands due to HgBr (B-X), CH(A-X), and CH(B-X) transitions were observed besides atomic mercury lines. Emission cross-sections as a function of energy of helium ions for the strongest band of HgBr radical at 502 nm corresponding to the transition (v' = 0 ? v′ = 22) were determined.     

N2微空心阴极放电特性及其阴极溅射的PIC/MC模拟

采用两维PIC/MCC模型模拟了氮气微空心阴极放电以及轰击离子 (N₂⁺,N⁺) 的钛阴极溅射. 主要计算了氮气微空心阴极放电离子 (N₂⁺,N⁺) 及溅射原子Ti的行为分布, 并研究了溅射Ti 原子的热化过程. 结果表明: 在模拟条件下, 空心阴极效应是负辉区叠加的电子震荡; 在对应条件下, 微空心较传统空心放电两种离子 (N₂⁺,N⁺) 密度均大两个量级, 两种离子的平均能量的分布及大小几乎相同; 在放电空间N⁺的密度约为N₂⁺的1/6, 最大能量约大2倍; 在不同参数 (P, T, V)下, 轰击阴极内表面的氮离子(N₂⁺,N⁺)的密度近似均匀, 其平均能量几乎相等; 从阴极溅射出的Ti原子的初始平均能量约6.8 eV, 离开阴极约0.15 mm处几乎完全被热化. 模拟结果为N₂微空心阴极放电等离子体特性的认识提供了参考依据. 关键词： 微空心阴极放电 PIC/MC模拟 2等离子体')" href="#">N₂等离子体     

N2- and O2-broadening of CO2 for the (301)III ← (000) band at 6231 cm

The N₂- and O₂-broadening effect have been investigated for 10 absorption lines of the CO₂ (30⁰1)_III ← (00⁰0) band centered at 6231 cm⁻¹, in the range from P(28) to R(28) by a near-infrared diode-laser spectrometer. We have analyzed the observed line profiles with the Galatry function, and determined the N₂- and O₂-broadening coefficients precisely. The air-broadening coefficients for these lines have been derived. The present results are compared with those of the previous studies for this band and with some of the other bands.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Rotational analysis of the (4, 8) band in the A-X system of Cl2

Thirty-four rovibronic spectral lines of the Ω=1/2 component of the (4, 8) band in the A-X system of ³⁵Cl₂⁺ were observed in the range of 16,940-17,010 cm⁻¹, employing optical heterodyne-enhanced velocity modulation spectroscopy. Nonlinear least-squares fitting the effective Hamiltonians results in precise band origin and other molecular constants of the levels involved.     

Diode laser absorption spectrum of cold bands of C2HD at 6500 cm

The absorption spectrum of acetylene-d has been observed at high resolution between 6470 and 6630 cm⁻¹ using an external cavity diode laser. Three cold bands have been observed: the strong 2ν₁ band, the weaker ν₁ + ν₂ + 2ν₅ band, and the (ν₁ + ν₃ + ν₅)¹ band, which gains its intensity through Coriolis resonance with 2ν₁. Centers of unblended lines are determined with an accuracy of approximately 10 MHz.     

Line broadening and shift coefficients of acetylene at 1550 nm

Pressure broadening and shift coefficients have been measured for the ν₁ + ν₃ band of acetylene, C₂H₂, broadened by N₂, H₂, D₂, air, and the noble gases at 295 K. Coefficients are reported for lines between 6470 and 6612 cm⁻¹ (1512-1546 nm). The pressure broadening coefficients are in general agreement with those reported for other vibrational bands, indicating that they are insensitive to vibrational excitation. The pressure shift coefficients, by contrast, are found to differ substantially among vibrational bands.     

DC discharge experiment in an Ar/N2/CO2 ternary mixture: A laboratory simulation of the Martian ionosphere's plasma environment

A low-pressure DC plasma discharge sustained in a 1.6%Ar–2.7%N₂–95.3%CO₂ ternary mixture is studied. This plasma was generated in a total pressure range from 1.0 to 4.0 Torr, a power of 6.3 W and a 12 l/min flow rate of gases. The electron temperature was found to be 8.41 eV and the ion density, in the order of 10⁹ cm⁻³. The species observed in the plasma mixture were CO₂, CO₂⁺, CN, CO, CO⁺, O₂, O₂⁺, N₂, N₂⁺, NO, C⁺, Ar and Ar⁺. At the pressure range in the present study, the species observed do not change their intensity due to an increase in the pressure and they separate in two groups according to their emission intensity: the band of the first group (CO₂, CO₂⁺ and CN) is approximately a factor of 3 more intense than that of the second group (CO, CO⁺, O₂, O₂⁺, N₂, N₂⁺, NO, C⁺, Ar and Ar⁺). The behavior of the emission intensities may be correlated to the constant ion density and electron temperature measured. Also, we observed the same constant behavior in the ratios of the neutral and positive species intensities to that of the N₂ intensity, as a function of pressure. This may suggest that the different rate coefficients and cross sections of elastic collision, excitation and de-excitation of electronic or vibrational levels, inelastic and superelastic collisions of electrons with the gas phase and products, neutral–neutral interactions, resonant charged transfer processes, recombination, to mention some, to produce these species change in the same proportion, as a function of the pressure to keep the relative ratios of the species almost constant.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Ion-beam irradiation effect on solid-phase growth of β-FeSi2

Effects of Ar⁺ ion-beam irradiation on solid-phase growth of β-FeSi₂ have been investigated. Fe (10 nm)/Si structures were irradiated with 25 keV Ar⁺ (5.0×10¹⁵ cm⁻²) at a temperature of 25°C (sample A) or 400°C (sample B), and subsequently annealed at 800°C. A reference was obtained after annealing without irradiation (sample C). X-ray diffraction results indicated that β-FeSi₂ was formed after annealing at 800°C for 5 h, and the formation rate was the fastest for sample A and the slowest for sample C, i.e., A>BC. However, Auger electron spectroscopy measurements showed that atomic mixing at Fe/Si interface before annealing was B>AC. These results suggested that amorphization of Si substrate, in addition to atomic mixing, enhanced the solid-phase growth of β-FeSi₂, which was confirmed experimentally. Moreover, a direct band gap of 0.89 eV was observed for the sample with pre-amorphization by the Fourier-transform infrared (FT-IR) spectroscopy measurements. These enhancement effects were attributed to that the phase transition to β-FeSi₂ was accelerated by atomic arrangement induced during annihilation of excess vacancies. These enhancement effects can be utilized for nano-fabrication of β-FeSi₂ by using focused ion-beam irradiation.     

钴离子注入对二氧化钛晶体的结构和光学性能的影响

采用离子注入法制备了钴离子掺杂的金红石相TiO₂样品;离子注入能量、注量分别为40 keV(1×10¹⁶cm^-2),80 keV(5×10¹⁵,1×10¹⁶,5×10¹⁶,1×10¹⁷cm^-2),120 keV(1×10¹⁶cm^-2). 通过XRD,XPS和UV-Vis等手段对掺杂前后样品的结构和光学性能进行了表征,分析了掺杂元素在金红石TiO₂中的存在形式. XRD测试表明随着注入能量的增加晶体的损伤程度增加. UV-Vis测试表明掺杂后所有样品在可见光区的吸收增强; 并且随着注量的增加,注量为5×10¹⁵cm^-2到5×10¹⁶cm^-2范围内注入样品的光学带隙逐渐变小. 关键词： 钴 二氧化钛 离子注入 掺杂     

Color improvement of white-light through Mn-enhancing yellow-green emission of SrSi2O2N2:Eu phosphor for white light emitting diodes

Photoluminescence (PL) enhancement of SrSi₂O₂N₂:Eu and the resultant color improvement of white-light were investigated via co-doping Mn with Eu. We observed that a unique absorption of host lattice of SrSi₂O₂N₂ and its visible band emission peaked at around ∼550 nm for SrSi₂O₂N₂:Mn²⁺ in the wavelength range of 450-600 nm. This highly eye-sensitive ∼550 nm-peaked band emission of SrSi₂O₂N₂ doped with Mn²⁺ happens to overlap the 535 nm-peaked band emission of SrSi₂O₂N₂ doped with Eu²⁺, resulting in an intensified photoluminescence in a maximum by 355%. By combining this as-prepared Mn intensified SrSi₂O₂N₂:Eu phosphor with blue InGaN chip, the quality of white-light was improved to 93.3% for color rendering index and 3584 K for correlated color temperature.     

Optical properties of Eu:CsGd2F7 downconversion phosphor

Luminescence spectra and excitation spectra in 150-420 nm spectral region have been recorded at room temperature for polycrystalline sample of (0.5%)Eu³⁺:CsGd₂F₇. The relatively intense emission has been observed from ⁵D₃, ⁵D₂ and ⁵D₁ levels. Emission and excitation spectra prove that the excitation energy is efficiently transferred from the ⁶G_J and ⁶I_J levels of Gd³⁺ ions to Eu³⁺ ions. The visible quantum cutting via downconversion has been detected, with efficiency of the cross-relaxation step of ∼50%.     

Electrical and optical characterization of pulsed plasma of N<Subscript>2</Subscript>–H<Subscript>2</Subscript>

This paper considers the electrical and optical characterization of glow discharge pulsed plasma in N₂/H₂ gas mixtures at a pressures range between 0.5 and 4.0 Torr and discharge current between 0.2 and 0.6 A. Electron temperature and ion density measurements were performed employing a double Langmuir probe. They were found to increase rapidly as the H₂ percentage in the mixture was increased up to 20%. This increase slows down as the H₂ percentage in the gas mixture was increased above 20% at the same pressure. Emission spectroscopy was employed to observe emission from the pulsed plasma of a steady-state electric discharge. The discharge mainly emits within the range 280–500 nm. The emission consists of N₂ (C-X) 316, 336, 358 nm narrow peaks and a broad band with a maximum at λ_max = 427 nm. Also lines of N₂, N₂ ⁺ and NH excited states were observed. All lines and bands have their maximum intensity at the discharge current of 0.417 A. The intensities of the main bands and spectral lines are determined as functions of the total pressure and discharge current. Agreement with other theoretical and experimental groups was established.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

N2O+离子A2Σ+电子态高振动能级的转动结构分析

利用一束波长为36055nm的激光,通过(3+1)共振多光子电离方法制备纯净的且处于X²Π_1/2,3/2(000)态的N₂O⁺离子,用另一束激光激发所制备的离子到第一电子激发态A²Σ⁺的不同振动能级,然后解离,通过检测解离碎片NO⁺强度随光解光波长的变化,得到了转动分辨的N₂ 关键词： 2O⁺离子A²Σ⁺电子态')" href="#">N₂O⁺离子A²Σ⁺电子态 共振增强多光子电离 光解碎片激发光谱 光谱常数     

Self-, N2- and O2-broadening coefficients for the CO2 transitions near-IR measured by a diode laser photoacoustic spectrometer

Using a high-resolution tunable diode laser photoacoustic spectrometer, self-, N₂ and O₂ pressure broadening coefficients for the first 11 transitions of ¹²C¹⁶O₂ in the R branch of the (30012) ← (00001) overtone band at the 6348 cm⁻¹ have been revisited at room temperature (∼298 K). Air-broadening parameters have also been calculated from the N₂ and O₂ measurements. The dependence of the broadening on rotational quantum number m is discussed. The recorded lineshapes are fitted with standard Voigt line profiles in order to determine the collisional broadening coefficients of carbon dioxide transitions. The results are compared to our previous measurements and to the values reported in the HITRAN04 database and by other research group with a different spectroscopic technique.     

Line shift and mixing in the ν4 and 2ν2 band of NH3 perturbed by H2 and Ar

Pressure induced line shift and line mixing parameters have been measured for 66 rovibrational lines in the ν₄ band and for 10 lines in the 2ν₂ band of NH₃ perturbed by H₂ and Ar at room temperature (T = 296 K). These lines with J values ranging from 2 to 10 are located in the spectral range 1450-1600 cm⁻¹. Experiments were made with a high-resolution Fourier transform spectrometer. The line shifts and line mixing parameters have been derived from the non-linear least-square multi-pressure fitting technique. The shift coefficients are compared with those calculated from the Robert-Bonamy formalism (RB). The results are generally in satisfactory agreement with the experimental data.