Ultrashort-laser-pulse-driven rewritable phase-change optical recording in Sb-based films

This paper reviews the work we have carried out over the last years on the development of ultrashort-laser-pulse-driven, rewritable, phase-change optical memories. The materials we have tailored for this application are non-stoichiometric, Sb-rich amorphous thin films, which can be crystallized upon irradiation with ultrashort laser pulses, showing a large optical contrast upon transformation. This result makes them very promising for the development of rewritable phase-change optical memories under ultrashort pulses, since the reversibility of the process has also been demonstrated. Adequate control of the heat-flow conditions has allowed us to achieve a full transformation time faster than 400 ps for crystallization/amorphization using 30-ps pulses. The crystallization threshold fluence has been found to decrease upon irradiation with pulses shorter than 800 fs, thus suggesting the relevance of high-electronic-excitation-induced processes in the amorphous-to-crystalline phase transition. This has been confirmed by the observation of an ultrafast, non-thermal phase transition occurring 200–300 fs after the arrival of the laser pulse at the surface, for fluences above the crystallization threshold. The presence of this transient phase conditions the final state induced therefore enabling the applicability of this material as a rewritable recording medium using femtosecond pulses. Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: J.Solis@io.cfmac.csic.es     

Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures

Abstract

X-ray diffraction has been measured for crystalline silicon, crystalline germanium, amorphous silicon and amorphous germanium at temperatures down to 100 K and pressures up to 20 GPa using a diamond anvil cell and synchrotron radiation. The structural phase transitions, including amorphization, take place in the pressure-temperature range. It has been found that the structures after the phase transitions strongly depend on the path in the pressure-temperature diagram through which the system undergoes the phase transitions. For any of the aforementioned four materials, the high-pressure phase with the p-Sn structure is quenched during a release of pressure at 100 K, and transforms into an amorphous state when heated up to around 2 GPa. The path dependence of the states is discussed in relation to the pressure dependence of the heights of the energy barriers which have to be overcome when phase transitions occur. The effect of a structural disorder on the phase transition is also discussed by comparing the experimental results for the crystalline and amorphous materials.     

Search for a precursor crystal-to-crystal phase transition to amorphization in α-GeO2 and α-AlPO4 under pressure

Recent X-ray diffraction studies on α-quartz (SiO₂) by Kingmaet al [1], have shown the occurrence of a reversible, crystalline-to-crystalline, phase transition just prior to amorphization at ≈ 21 GPa. This precursor transition has also been confirmed by our recent molecular dynamics simulation study [2]. In order to investigate the possibility of a similar behaviour in other isostructural compounds, which also undergo pressure induced amorphization, α-GeO₂ and α-AlPO₄ (berlinite form) were studied using energy dispersive X-ray diffraction. In either of these materials, no such phase transition is detected prior to amorphization. The onset of amorphization and its reversal is found to be time dependent in GeO₂.     

Role of electronic excitation in the amorphization of Ge-Sb-Te alloys

First-principles molecular dynamics simulation reveals the effects of electronic excitation in the amorphization of Ge-Sb-Te. The excitation makes the phase change an element-selective process, lowers the critical amorphization temperature considerably, for example, to below 700?K at a 9% excitation, and reduces the atomic diffusion coefficient with respect to that of melt by at least 1 order of magnitude. Noticeably, the resulting structure has fewer wrong bonds and significantly increased phase-change reversibility. Our results point to a new direction in manipulating ultrafast phase-change processes with improved controllability.     

硼酸锂系列晶体的高压拉曼散射研究

本文进行了硼酸锂系列晶体的高压拉曼散射及其压致相变的研究。对于三硼酸锂（ＬｉＢ３Ｏ５），我们发现在５．０ＧＰａ有一可逆的晶态到晶态的相变，在２７．０ＧＰａ有一不可逆的晶态到非晶态的相变。二硼酸锂（Ｌｉ２Ｂ４Ｏ７）不可逆压致非晶相变发生在３２．０ＧＰａ附近。对于一硼酸锂，我们研究了０—５５．８ＧＰａ范围内的高压拉曼光谱，只在２．０ＧＰａ发现了一个晶态到晶态的相变，但未发现不可逆压致非晶化现象。在硼酸锂系列晶体中，不可逆压致非晶化的压力随Ｌｉ２Ｏ的含量的增加而升高。硼酸锂晶体中Ｌｉ２Ｏ的含量越高，压致非晶化越不容易发生，这与熔体急冷法制备硼酸锂玻璃的规律是一致的。     

High pressure structural phase transitions of TiO_2 nanomaterials

Recently, the high pressure study on the TiO_2 nanomaterials has attracted considerable attention due to the typical crystal structure and the fascinating properties of TiO_2 with nanoscale sizes. In this paper, we briefly review the recent progress in the high pressure phase transitions of TiO_2 nanomaterials. We discuss the size effects and morphology effects on the high pressure phase transitions of TiO_2 nanomaterials with different particle sizes, morphologies, and microstructures. Several typical pressure-induced structural phase transitions in TiO_2 nanomaterials are presented, including size-dependent phase transition selectivity in nanoparticles, morphology-tuned phase transition in nanowires, nanosheets,and nanoporous materials, and pressure-induced amorphization(PIA) and polyamorphism in ultrafine nanoparticles and TiO_2-B nanoribbons. Various TiO_2 nanostructural materials with high pressure structures are prepared successfully by high pressure treatment of the corresponding crystal nanomaterials, such as amorphous TiO_2 nanoribbons, α-PbO_2-type TiO_2 nanowires, nanosheets, and nanoporous materials. These studies suggest that the high pressure phase transitions of TiO_2 nanomaterials depend on the nanosize, morphology, interface energy, and microstructure. The diversity of high pressure behaviors of TiO_2 nanomaterials provides a new insight into the properties of nanomaterials, and paves a way for preparing new nanomaterials with novel high pressure structures and properties for various applications.     

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.     

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-T _c superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction, and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.     

‘Phase transitions’ in bacteria – From structural transitions in free living bacteria to phenotypic transitions in bacteria within biofilms

Phase transitions are common in inanimate systems and have been studied extensively in natural sciences. Less explored are the rich transitions that take place at the micro- and nano-scales in biological systems. In conventional phase transitions, large-scale properties of the media change discontinuously in response to continuous changes in external conditions. Such changes play a significant role in the dynamic behaviours of organisms. In this review, we focus on some transitions in both free-living and biofilms of bacteria. Particular attention is paid to the transitions in the flagellar motors and filaments of free-living bacteria, in cellular gene expression during the biofilm growth, in the biofilm morphology transitions during biofilm expansion, and in the cell motion pattern transitions during the biofilm formation. We analyse the dynamic characteristics and biophysical mechanisms of these phase transition phenomena and point out the parallels between these transitions and conventional phase transitions. We also discuss the applications of some theoretical and numerical methods, established for conventional phase transitions in inanimate systems, in bacterial biofilms.     

X ray absorption spectroscopy investigation of phase transition in Ge,GaAs and GaP

Abstract

The phase transitions of GaAs, GaP and Ge under pressure have been investigated by x-ray absorption spectroscopy (XAS). At the onset of the transition the Debye-Waller factor increases and the x-ray absorption near edge structure (XANES) is progressively modified. A mixing of the low and high pressure phase can be determined by XAS as well as amorphization of the sample on pressure release.     

Macroscopic description of the ferromagnetic superconductors

We present an improved analysis of the phase transitions in spin-triplet ferromagnetic superconductors within Ginzburg–Landau theory. We put special emphasis on the phase transitions from normal phase to the mixed phase of coexistence of ferromagnetism and unconventional superconductivity. We present a detailed analysis of the different phases that can occur and analyze the question under which conditions the phase transitions from normal phase to the mixed phase of coexistence of ferromagnetism and unconventional superconductivity are possible when compared to other phase transitions. The conditions for the phase transitions and the stability conditions are calculated. On the basis of this model, it is argued that the transition from normal phase to the mixed phase of coexistence is always of first order. It was observed from the theoretical calculations that the transition from the ferromagnetic phase to the coexistence phase can cross over from the first to the second order at the tricritical point.     

Pressure-induced amorphization of Gd2(MoO4)3: A high pressure Raman investigation

High pressure Raman spectroscopic studies on Gd₂(MoO₄)₃(GMO) have been carried out at ambient temperature in the diamond cell to 10 GPa hydrostatic pressure. These experiments have revealed pressure-induced phase transitions in GMO near 2 GPa and 6.0 GPa. The first transition is from Pba2(β′) phase to another undetermined crystalline phase, designated as phase II, and the second transition is to an amorphized state. On releasing pressure there is a partial reversion to the crystalline state. The Raman data indicate that the amorphization is due to disordering of the MoO₄ tetrahedral units. Further, it is inferred from the nature of the Raman bands in the amorphized material that the Mo-O bond lengths and bond angles have a range of values, instead of a few set values. The results of the present study as well as previous high pressure-high temperature quenching experiments strongly support that pressure-induced amorphization in GMO is a consequence of the kinetically impededβ toα phase transition. The system in frustration becomes disordered. The rare earth trimolybdates crystallizing in theβ′ structure are all expected to undergo similar pressure-induced amorphization.     

金属氢研究新进展

简要介绍了金属氢的研究意义和应用前景 ,详细评述了有关的高压实验方法和最近的研究成果及进展 ,特别是固体氢的相图、结构和相变 .近十多年来 ,随着超高压技术的发展 ,已能在金刚石对顶砧 (DAC)上产生30 0GPa的静态压力 ,并可进行高压原位实验研究 .对固体氢进行了高压拉曼、同步辐射X射线、光反射和吸收、同步辐射红外光谱等一系列高压物性和相变研究 .从而确定了固体氢的三个相 ,并提出了可能的相结构 .     

Phase transition in complex /psi/(4) theory

Motivated by recent claims for rather unconventional first-order phase transitions in the two- and three-dimensional complex /psi/(4) theory in certain parameter ranges we performed Monte Carlo simulation studies of this model. From our results in two and three dimensions we can unambiguously conclude that there is no evidence for a first-order transition, provided the measure of field fluctuations is treated properly. The origin of the discrepancy is traced by comparative simulations reproducing the erroneous results and by a transfer-matrix study of the one-dimensional case.     

Lattice gas automata for simple and complex fluids

We review some recent applications of lattice gas automata, including flow through porous media, phase transitions, thermodydrodynamics, and magnetohydrodynamics.     

The effect of inactive impurities on a surface in NO-CO reaction: A Monte Carlo simulation

The interaction among the reacting species in the NO-CO reaction on a metal catalytic surface that proceeds according to the Langmuir-Hinshelwood thermal mechanism is studied by means of Monte Carlo simulations. The study of this system is essential for the understanding of the influence of impurities on the catalytic oxidation of NO by CO. It is found that this complex system exhibits irreversible phase transitions between active states with sustained reaction and poisoned states without reaction. The same system has also been investigated by non-thermal (Eley-Rideal) mechanism. Both the phase diagrams of the surface coverage and the steady state production of CO₂ and N₂ are evaluated as a function of the partial pressures of the reactants in the gas phase. From this study, it is observed that with the increase of impurities, the production rate reduces and the reaction stops at a certain point. Moreover, the first order transition in the phase diagram converts into second order phase transition that is in accordance with the experimental findings. Therefore, the first order phase transition, which is a characteristic of such catalytic reactions, is eliminated.     

Structural stability of tin clathrates under high pressure

High pressure Raman scattering experiments have been performed for Rb₈Sn₄₄□₂ in order to investigate the pressure induced phase transition. At pressures of 6.0 and 7.5 GPa, Raman spectrum was drastically changed, indicating the phase transitions. The irreversibility of the spectral change and the disappearance of Raman peak observed at 7.5 GPa strongly suggest the occurrence of irreversible amorphization.     

Computational research on memory effects in AlPO4-5 nanoporous material

Reversible amorphization and memory effects of both dense and open frameworks have received a great attention due to their prospective industrial applications. In this paper, the results of a computational study related to phase transition and memory effects in AlPO₄-5 nanoporous material at high external pressure is presented. The behavior of the AlPO₄-5 unit cell at high external pressures was studied by energy minimization techniques using classical potentials. A combination of interatomic potentials was used to describe the crystalline structure of the aluminophosphate. According to simulation's result a decrease of crystalline order is observed at a pressure about 3.5 GPa. The behavior of the simulated infrared spectra of compressed structures is an unambiguous evidence of structural disorder. Also, an abrupt change in the slope of the unit cell volume vs. pressure curve was obtained. At P≤3.5 GPa the process was found reversible. Contrary to what has been reported in other aluminosilicate systems the final crystalline state of AlPO₄-5 at the highest simulated pressure was not amorphous. According to our knowledge this is the first evidence of a reversible first-order crystal-crystal phase transition in AlPO- family materials. This result could be important in future industrial and catalytic applications of these materials.     

磁斯格明子器件及其应用进展

磁斯格明子是一种具有准粒子特性的拓扑纳米磁畴壁结构.由于磁斯格明子具有较好的稳定性和新奇的动力学特性,并可被磁场、电场、电流等方式调控,有望成为高密度、低耗能、非易失性信息存储及逻辑运算的新兴信息载体.自2009年磁斯格明子首次被实验观测到至今,已有多种基于磁斯格明子的器件概念和原型器件被提出.本文对基于磁斯格明子应用的研究进展进行综述,对现阶段几种具有代表性的磁斯格明子器件应用进行简要介绍、分析和总结,包括基于磁斯格明子的赛道存储器件、逻辑计算器件、类晶体管功能器件和纳米级微波振荡器;同时阐述了几种可能的通过磁斯格明子表达二进制信息元的方法;并展望了磁斯格明子的其他潜在应用以及未来基于磁斯格明子器件应用的发展方向.     

Simulations of the chain length dependence of the melting mechanism in short-chain n-alkane monolayers on graphite

The melting transition in solid monolayers of a series of short-chained n-alkanes, n-octane (n-C₈H₁₈), n-decane (n-C₁₀H₂₂), and n-dodecane (n-C₁₂H₂₆) physisorbed onto the graphite basal plane are studied through use of molecular dynamics simulations. Utilizing previous experimental observations of the solid phase behavior of these monolayers, this study investigates the temperature dependence of the phases and phase transitions in these three monolayers during the solid-fluid phase transition, and compares the observed melting behavior to previous studies of hexane and butane monolayers. In particular, this study seems to indicate a greater dependence of the melting transition on the formation of gauche defects in the alkyl chains as the chain length is increased. In light of the previously proposed “footprint reduction” mechanism and variations where the formation of gauche defects are energetically negated, simulations seem to suggest that decane and dodecane monolayers are generally equally as dependent upon the formation of gauche defects for the melting transition to take place, whereas octane monolayers seem to have less dependence, but follow a trend that is established in previous studies of melting in butane and hexane monolayers. Also, the phase transition from a solid herringbone phase into an orientationally ordered “intermediate” phase is found to exhibit some differences as compared to a recent study of hexane monolayers, which may be interpreted as originating from the greater influence of gauche defects. Comparison to experimental melting temperatures is provided where possible, and applications involving thin film manipulation and lubrication is discussed.