Temperature dependence and the effect of hydrogen peroxide on ITO/poly-ZnO Schottky diodes fabricated by laser evaporation

Transparent and efficient poly-ZnO ultraviolet Schottky diodes grown at different temperatures with indium-tin-oxide (ITO) as the metallic contact layer were fabricated with hydrogen peroxide (H₂O₂) applied as a surface treatment at 70 °C for 20 min. Analysis via field-emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that the ZnO films underwent gradual oxidation and that H₂O₂ treatment resulted in an interfacial ZnO₂ layer that covered the ZnO surface. I–V measurements indicated that the ideality factor and the Schottky barrier height improved with increasing shunt resistance, and the trade-off between film quality and the degree of oxidation revealed that films grown at 400 °C exhibited the best diode characteristics.     

Deposition of ZnO Nanocrystals on Fe3O4 Nanocubes and Their Special Luminescent and Magnetic Properties

With increasing miniaturization, it is extremely important to maintain the magnetization stability at small scale. Herein, more efforts and interests focus on the interface of magnetic core and semiconductor shell to obtain desired magnetic and/or luminescent properties. Here, Fe₃O₄ nanocubes are synthesized via a thermal decomposition followed by coating ZnO nanocrystals. To create a large interface, large Fe₃O₄ nanocubes with 78 ± 3 nm average side‐length are synthesized through adjusting the ratio of iron precursor to stabilizer. The average diameter of the particular ZnO nanostructures coated on the nanocubic Fe₃O₄ is around 10 ± 2 nm. In addition to the photoluminescent properties of the ZnO‐coated nanostructures, core‐shell Fe₃O₄@ZnO nanostructures demonstrate enhanced UV absorption at 360 nm, which has a 20 nm blueshift compared to bulk ZnO. The superparamagnetic properties of Fe₃O₄@ZnO core–shell hybrid nanocrystals at room temperature are dominated by the ferromagnetic properties when the temperature is lower than the Blocking temperature, 235.7 K. The observed exchange bias and temperature‐dependent magnetization can result from the interfacial interphase between ZnO and Fe₃O₄. The anisotropy contributed by the interfacial interphase allows the nanostructures to maintain stable magnetization in miniaturized devices.     

Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy

ZnO films prepared at different temperatures and annealed at 900^o C in oxygen are studied by photoluminescence （PL） and x-ray photoelectron spectroscopy （XPS）. It is observed that in the PL of the as-grown films the green luminescence （GL） and the yellow luminescence （YL） are related, and after annealing the GL is restrained and the YL is enhanced. The 0 ls XPS results also show the coexistence of oxygen vacancy （Vo） and interstitial oxygen （Oi） before annealing and the quenching of the Vo after annealing. By combining the two results it is deduced that the GL and YL are related to the Vo and Oi defects, respectively.     

Photoluminescence quenching in zinc oxide modified by Al2O3 and Al2O3 · CeO2 Nanopowders under proton irradiations

The photoluminescence spectra of initial ZnO powder and that modified by Al₂O₃, Al₂O₃ · CeO₂ nanopowders are investigated in the range 360–660 nm before and after 100-keV proton irradiation. It is found that the introduction of nanoparticles causes a decrease in the UV-band intensity and a change in the luminescence bands in the visual spectrum due to V _O ⁺ oxygen vacancies, O _int ^- interstitial oxygen, and V _Zn ^- zinc vacancies. Luminescence quenching in the UV and visible spectra occurs under the effect of protons. The decomposition of the spectra into elementary defects and analysis of changes in their integrated intensity during modification and irradiation of the powders are carried out.     

高压下制备的透明低阻n-ZnO陶瓷的表征

本文报道了高压烧结透明低阻ZnO陶瓷的过程,解决了常压下烧结ZnO高阻不透明的问题.在5 GPa,800℃下获得了最佳光电性能的低阻透明ZnO陶瓷,其透过率为49%左右,电阻率为0.57 Ω ·cm,禁带宽度为3.31 eV,载流子浓度为8.36×10¹⁷ cm^-3,迁移率为23 cm² ·V^-1 ·s^-1,良好的n型导电性来自于Zn_i和V_o关键词： 高压 陶瓷 n-ZnO 透明     

Effects of preannealing temperature of ZnO thin films on the performance of dye-sensitized solar cells

The preferred (002) orientation zinc oxide (ZnO) nanocrystalline thin films have been deposited on FTO-coated glass substrates by sol–gel spin-coating technology and rapid thermal annealing for use in dye-sensitized solar cells (DSSC). The effects of preannealing temperature (100 and 300°C) on the microstructure, morphology and optical properties of ZnO thin films were studied. The ZnO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopic (SEM) and Brunauer–Emmett–Teller (BET) analysis. The photoelectric performance of DSSC was studied by I–V curve and the incident photon-to-current conversion efficiency (IPCE), respectively. From the results, the intensities of (002) peaks of ZnO thin films increases with increasing preannealing temperature from 100°C to 300°C. The increase in pore size and surface area of ZnO films crystallized at the increased preannealing temperature contributed to the improvement on the absorption of N3 dye onto the films, the short-circuit photocurrent (J _sc) and open-circuit voltage (V _oc) of DSSC. The higher efficiency (η) of 2.5% with J _sc and V _oc of 8.2 mA/cm² and 0.64 V, respectively, was obtained by the ZnO film preannealed at 300°C.     

Cathodoluminescence characterization of ZnO:Te microstructures obtained with ZnTe and TeO2 doping precursors

ZnTe- and TeO₂-doped ZnO nanostructures and microstructures were obtained by a vapour–solid process by sintering compacted ZnO powder mixed with each precursor. Cathodoluminescence (CL) measurements show that if TeO₂ is used, then the defect band, due mainly to O vacancies (V _O), tends to reduce and even disapear, which indicates that Te reacts with ZnO and passivates the O vacancies better than if ZnTe is used as a precursor. With both precursors, a CL peak at about 3.08–3.17 eV, which overlaps with that of ZnO at about 3.26 eV, indicates that ZnTe_xO_1−x forms.     

Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

High purity Fe₂O₃/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe₂O₃/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe₂O₄. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe₂O₃/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.     

Fabrication of LSM-SDC composite cathodes for intermediate-temperature solid oxide fuel cells

Microstructure, interfacial resistance, and activation energy for composite cathodes consisting of 50 wt% (La_0.85Sr_0.15)_0.9MnO_3-δ (LSM) and 50 wt% Sm_0.2Ce_0.8O_1.90 (SDC) were studied for intermediate-temperature solid oxide fuel cells based on SDC electrolytes. Microstructure and interfacial resistance were greatly influenced by the characteristics of starting powder and temperatures sintering the electrodes. Optimum sintering temperatures were 1100 and 950 °C, respectively, for electrodes with SDC prepared using oxalate coprecipitation technique (OCP) and glycine-nitrate process (GNP). Area-specific resistances determined using impedance spectroscopy were 0.47 and 0.92 Ω cm² at 800 °C for LSM-SDC/OCP and LSM-SDC/GNP, respectively. The high electrochemical performance is attributed to small grain size, high porosity, and high in-plane electrical conductivity of composite cathode, demonstrating the dramatic effects of microstructure on electrode performance. To increase the electrode performance, it is critical to enhance the diffusion rate of oxygen species.     

Effect of point defects on luminescence characteristics of ZnO ceramics

Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V_O are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.     

Influence of grain size on luminescence properties of micro- and nanopowder Zn2V2O7 vanadate

Micro- and spongiform nanocrystalline Zn₂V₂O₇ compounds were synthesized by hydrothermal and solid-state reaction techniques, and their morphological features were investigated by scanning electron microscopy (SEM). The grain size ranges of the produced powders were 3–15, 0.5–2 μm, and 50–500 nm. The luminescence spectra of these compounds were measured under pulse cathode beam and photoexcitation (200–400 nm). The luminescence decay properties of Zn₂V₂O₇ were studied.It is found that the intensity, maximum position of luminescence spectra and luminescence decay time of Zn₂V₂O₇ samples depend considerably on the grain size of the synthesized powders. The processes of energy relaxation in Zn₂V₂O₇ and the observed size effect on the luminescence properties are also discussed.     

Effects of substrate on surface morphology, crystallinity, and photoluminescence properties of sputtered ZnO nano films

Effects of substrate on crystallinity, surface morphology, and luminescence properties of radio frequency sputtered zinc oxide (ZnO) thin films were investigated. A variety of materials such as Si (100), Si (111), Al₂O₃, quartz, and silicon carbide (SiC) wafers were examined as substrates for deposition of ZnO thin films. The results showed smooth and uniform growth of c-axis orientation films. The thickness of the layers was about 50 nm. The average grain sizes of films were about 10, 13, and 12 nm for Si (111), quartz, and SiC samples, respectively. The deposited film on Al₂O₃ showed the largest grain size, about 500 nm. Grazing incidence x-ray diffraction patterns of the samples revealed that sputtered layers on Al₂O₃ and quartz had better crystallinity with higher peak at (002) orientation compared to Si and SiC substrates. Moreover, the Al₂O₃ sample exhibited a weak peak at position of (100) planes of ZnO too. The photoluminescence spectra of the samples showed a typical luminescence behavior with a broad UV band, including a main peak at around 388 nm and a weak shoulder peak at around 381 nm, corresponding with bound excitonic recombination and free excitonic recombination, respectively. The luminescence peak revealed that the intensity of UV emission is not necessarily dependent on the grain sizes and the micro-structural quality of ZnO films.     

Kinetic analysis of the thermal decomposition of pristine and γ-irradiated zinc uranyl acetate

Thermal decomposition of pristine and γ-irradiated zinc uranyl acetate was investigated in air using isothermal and dynamic thermogravimetric techniques. The decomposition proceeded via one major process with the formation of triuranates ZnU₃O₁₀ as solid residues. Kinetic analysis of isothermal data, when compared with various solid-state reaction models, showed that the decomposition reaction is best fitted by the phase-boundary model. Kinetic analysis of the dynamic TG curves was discussed with reference to integral methods of modified Coats and Redfern equations. Kinetic and thermodynamic parameters were calculated and evaluated. IR spectroscopy and X-ray powder diffraction techniques were employed to follow the chemical composition of solid residue at different calcination temperatures. The results display that the triuranate ZnU₃O₁₀ starts forming by calcination of zinc uranyl acetate at temperatures?>?300 °C and undergoes decomposition at higher temperatures (>600 °C) with the formation of U₃O₈. The results were evaluated regarding the utilization of zinc uranyl acetate as an important source of diuranates and triuranates.     

Preparation and luminescence properties of Eu2+-doped BaSi2O5 glass-ceramics

We report on the preparation of Eu²⁺-doped BaSi₂O₅ glass-ceramics by crystallizing an Eu³⁺-doped barium-silicate glass at temperatures in the range from 750 to 1100 °C. Single phase BaSi₂O₅ glass ceramics can be obtained by thermal annealing at temperatures of about 950 °C. The luminescence intensity of Eu²⁺ increases dramatically if monoclinic BaSi₂O₅ is formed. Monoclinic Eu²⁺:BaSi₂O₅ shows efficient, broad band luminescence between 450 and 550 nm by excitation in the near UV. Annealing at temperatures >1000 °C leads to orthorhombic BaSi₂O₅ with much smaller Eu²⁺ luminescence. Static and time-resolved luminescence measurements indicate that Eu²⁺ ions are incorporated into the BaSi₂O₅ crystallites while Eu³⁺ ions remain in the amorphous phase.     

Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN

The effects of annealing on the luminescence properties of electron-irradiated GaN were investigated by photoluminescence (PL), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Our results indicate that the yellow luminescence (YL) remains disappear after all annealing treatments and shows a non-linear dependence on the annealing temperature up to 800 °C. The annealing process can be divided into two main stages associated with irradiation defects. At annealing temperatures up to 600 °C, the behavior of YL can be attributed to the net effects of V_GaO_N complex formation caused by the migration of gallium vacancies (V_Ga) and V_GaO_N complex dissociation due to the disappearance of gallium vacancies. At annealing temperatures approaching 800 °C, the incorporation of carbon into the group-V sublattice becomes the dominant factor in the appearance of YL. In addition, experimental results of PL and SEM show that a small proportion of irradiation damage still exists in GaN after annealing at 800 °C.     

聚丙烯酰胺凝胶法制备大孔α-氧化铝及其发光性能研究

采用聚丙烯酰胺凝胶法制备了大孔α-氧化铝材料.利用X射线衍射仪、扫描电镜、荧光分光光度计表征了所制备的氧化铝样品.结果表明,在1150℃烧结温度下可获得高纯的α-氧化铝陶瓷材料,其形貌呈类电路板型(monolithic)大孔结构.荧光光谱测试分析发现,在228 nm波长的光激发下,其荧光光谱在300-400 nm范围内由两个主发射带组成,其峰值分别位于330 nm和365nm.基于实验结果,探讨了多孔氧化铝的形成机理和发光机制.     

Spontaneous and stimulated red luminescence of Lu2O3: Eu nanocrystals

The spectra of spontaneous and stimulated luminescence of Lu₂O₃: Eu (7 at %) nanopowders at different optical pumping intensities have been investigated. The obtained results—changes in the shape of the red luminescence spectra and in the lifetime of the ⁵ D ₀ excited state of Eu³⁺ ions—indicate the onset of superluminescence with an increase in the excitation power. It has been found that an increase in the optical pumping intensity leads to a decrease in the luminescence decay time of the Lu₂O₃: Eu (7 at %) phosphor in the stimulated luminescence regime and to an increase in the quantum efficiency of red luminescence with a maximum at 611 nm.     

Hydrothermal synthesis of self-emitting Y(V,P)O4 nanophosphors for fabrication of transparent blue-emitting display device

Self-emiting Y(V_x,P_1?x)O₄ blue nanophosphors with various compositons (x=0.1–0.9) were synthesized by a facile hydrothermal route and subsequently annealed at different temperatures of 800–1100 °C for 2 h. A higher content of vanadate in Y(V,P)O₄ nanophosphors resulted in a larger particle growth upon annealing. The blue luminescence under a vacuum ultraviolet excitation increased with an increasing phosphate content. Considering the size and luminescence, Y(V_0.1,P_0.9)O₄ nanophosphors annealed at 800, 1000, and 1100 °C were used for the formation of transparent blue emissive layer. Nanophosphor layer was uniformly deposited on glass substrate by a screen-printing. ～0.9 μm thick nanophosphor layer that was prepared with 1000 °C-annealed Y(V_0.1,P_0.9)O₄ nanophosphor showed a high visible transmittance value of 78%. Transparent blue-emitting test panel of plasma display was simply fabricated using nanophosphor layer/glass as a rear panel and combining it with the front panel used in the current plasma display panel, and their discharge luminance properties were discussed.     

Vapour transport growth of ZnO nanorods

The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al₂O₃ using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80–900 nm and lengths of up to 12 μm were obtained. Nanorod density on the order of 10⁹ cm^-2 with homogenous luminescence and high purity was also noted. PACS 81.10.Bk; 81.15.Kk; 81.16.Hc; 78.55.Et; 81.05.Dz; 81.07.Bc     

Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T _g =700^oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700^oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at 700^oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy.