共查询到18条相似文献,搜索用时 93 毫秒
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本文在理论研究了LD泵浦Nd:YAG激光器的强度噪声特性,用传递函数的形式给出各种噪声湿源对激光器强度噪声的影响,计算结果指出,Nd:YAG激光器输出的激光并非相干态光场,在几兆频率上存在高于散粒噪声基准几十dB的驰豫振荡噪声,在小于驰豫振荡频率范围,激光器的强度噪声基本上处于泵浦泵噪声水平。 相似文献
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LD泵浦的Nd:YAG微片激光器实验研究 总被引:2,自引:1,他引:1
详细讨论了激光二极管泵浦的Nd:YAG微片激光器输出的纵,横模特性,当泵浦功率小于740mW时,输出为单纵模,基横模,线宽达到仪器分辨极限25MHz。 相似文献
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二极管泵浦的高效连续波基横模Nd:YAG激光顺 总被引:3,自引:0,他引:3
报道了用激光二极管端面泵浦的高效连续波TEM00模Nd:YAG激光器,最大输出为0.65W,斜效率51%,光-光效率最高达40.6%,并给出了耦合力学系统和二极管泵浦Nd:YAG激光器的器件结构。 相似文献
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Cr^4+:YAG的可饱和吸收特性与被动Q开关性能研究 总被引:22,自引:6,他引:16
运用速率方程计算了Cr^4+:YAG晶体的可饱和吸收特性参数,包括初始吸收系数,饱和吸收系数,饱和光强和损耗调制度,用Cr^4+:YAG对脉冲和连续Nd:YAG激光器进行了被动调Q,在脉冲Nd:YAG激光器上得到了8ns的调Q激光脉冲,在连续Nd:YAG激光器的调Q中得到了间隔和幅度抖动小于5%的输出脉冲充列。 相似文献
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LD汞浦Nd:YAG激光器的连续激光输出和高重复率调Q 总被引:1,自引:1,他引:0
用连续输出1W国产多量子阱激光二极管列阵(MQW-LDA)泵浦Nd:YAG固体激光器,连续激光输出最大功率为112mW,光-光效率为10.6%,斜效率为20%,实现了连续泵浦高重复频率(1kHz,4kHz,10kHz)调Q输出,最大峰值355W,最大平均功率为43.7mW。 相似文献
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报道了用两个1.5W激光二极管偏振耦合端面泵浦的声光调Q内腔倍频Nd:YAG激光器。输出532nm绿光重复频率1KHz时,最大峰值功率为2.23KW,最窄脉宽为18ns,平均功率40mW。最高重复频率30KHz。重复频率15kHZ时,最高平均率128mW。对声光调Q内倍频Nd:YAG激光器的动态特性进行了理论分析及计算。 相似文献
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研究了LD抽运的单纵模Cr,Tm,Ho∶YAG微片激光器,激光器厚度为1?mm,在用波长785?nm的LD进行端面抽运时,激光器阈值为1060?mW,单纵模激光最大输出功率为31?mW. 对激光器输出功率随温度变化特性进行了研究,验证了CTH∶YAG晶体的温度敏感性. 还研究了激光器的温度调谐特性,实验测得激光器的温度调谐系数为14?GHz/℃.
关键词:
激光光学
CTH∶YAG微片激光器
LD抽运
单纵模运转 相似文献
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Zhenguo Shan Xiaohua Shen Zuliang Fu Guosong Huang Yuzheng Tu Su Yin Liqing Shen Fuzheng Zhou 《Chinese Journal of Lasers》1993,2(4):289-294
A new experimental result obtained for the first time about LD pumped Nd: YAG microchip lasers in China is presented. The output power reached 62.5mW, when the input power was 340mW. The optical efficiency was 18%. The experimental setup and the unique characteristics of the laseers are given and discussed. 相似文献
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高峰值266nm紫外激光器 总被引:1,自引:0,他引:1
报道了一种激光二极管(LD)端面泵浦的Nd:YAG声光Q开关高峰值功率266nm紫外激光器。该激光器采用紧凑的平平腔结构,LBO和BBO分别作为其二倍频和四倍频晶体。分别利用高偏振比LD阵列(40∶1)、低偏振比LD阵列(5∶1)及低偏振LD阵列腔内放置布氏片结构进行了实验。当注入功率为25W、调制频率为10kHz时,以上结构分别得到功率0.85,0.61和0.72W的266nm紫外光输出。其中,采用高偏振比LD阵列的输出功率最高,单脉冲能量为85μJ,脉宽为5ns,峰值功率高达17kW,泵浦光到紫外光的光-光转换率达3.4%。 相似文献
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S. K. Sudheer V. P. Mahadevan Pillai V. U. Nayar 《Journal of Raman spectroscopy : JRS》2007,38(4):427-435
The application of lasers for processing diamond has revolutionized the diamond industry and its applications in microelectronics, microelectromechanical system (MEMS) and microoptoelectromechanical system (MOEMS) technologies. The process quality can be evaluated using spectroscopic techniques. In the present investigation, four different types of Q‐switched solid‐state lasers (with different beam parameters), namely, a lamp‐pumped Nd:YAG laser operating at 1064 nm, a lamp‐pumped Nd:YAG laser operating at second harmonically generated 532 nm, a diode‐pumped Nd:YVO4 laser operating at 1064 nm and a diode‐pumped Nd:YAG laser operating at 1064 nm, have been employed for the processing of a single‐crystal, gem‐quality, natural diamond. The main objective behind the selection of these lasers with different beam parameters was to study the effect of wavelength, pulse width, pulse energy, peak power and beam quality factor (M2 factor) on various aspects of processing (such as microcracking, material loss and cut surface quality) and their relative merits and demerits. The overall weight loss of the diamond and formation of microcracks during processing have been studied for the above four cases. The characteristics of the graphite formed during processing, elemental analysis, surface morphology of the cut surface and process dynamics have been studied using micro‐Raman spectroscopy and scanning electron microscopy (SEM). We observed that laser cutting of single‐crystal diamonds used for industrial applications can be accomplished without microcracking or surface distortion using Q‐switched Nd:YAG lasers. This allows direct processing without extensive postgrinding and polishing stages. Very efficient diamond processing is possible using diode‐pumped lasers, which results in the lowest possible breakage rate, good accuracy, good surface finish and low weight loss. From the micro‐Raman and SEM studies, it is concluded that the surface quality obtained is superior when diode‐pumped Nd:YVO4 laser is used, owing to its extremely high peak power. The maximum graphite content is observed while processing with lamp‐pumped Nd:YAG laser at 532 nm. An overall comparison of all the laser sources leads to the conclusion that diode‐pumped Nd:YAG laser is a superior option for the efficient processing of natural diamond crystals. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
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1.5-mum emissions from Nd:YAG, Nd:YVO(4), and LiNdP(4) O>(12) microchip lasers pumped by laser diodes have been observed. These coherent emissions are attributed to the effect of high-energy modified lattice vibration owing to the existence of Nd ions as well as to stimulated intracavity Raman scattering enhanced by the microchip configuration. A four-wave mixing process involving two lasing fields and a Stokes field was identified as the generator of new adjacent 1.5-mu;m emission. 相似文献
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High-average-power and high-energy lasers with good beam quality are fundamental tools for pumping high-peak and high-average-power ultrafast Ti:sapphire laser systems. Laser-diode (LD) pumped solid slate lasers with phase conjugation offer a unique combination of efficiency, reliability, and compactness. We present the design details and performance characteristics of a 360-W 1-kHz LD pumped Nd:YAG phase-conjugated laser. We also discuss the basic design aspects and present our preliminary experimental investigations on ultrashort-pulse laser systems. 相似文献
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Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium. 相似文献