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1.
Local work functions at individual atoms on a compound metal surface have been experimentally examined. The simultaneously obtained STM and local tunneling barrier height (LBH) images of NiAl(1 1 0) show that LBH at geometrically lower Ni sites is much higher than that at geometrically higher Al sites, indicating that each individual atom on the NiAl(1 1 0) surface has a specific potential barrier for relevant electrons.  相似文献   

2.
Ming Tan 《Applied Surface Science》2007,253(22):8905-8910
Using the laser post-ionization surface analysis technique, I have for the first time studied angular distributions of Ni and Al atoms sputtered from NiAl{1 1 0}. Emission angular distributions from Ni{1 0 0} have also been measured. I have observed preferential emissions of Ni and Al atoms along 〈1 1 1〉 and 〈1 0 0〉crystallographic directions for NiAl{1 1 0} and of Ni atoms along 〈1 1 0〉 and 〈1 0 0〉 directions for Ni{1 0 0}. The observed preferential ejections can be explained in terms of the theory of focusing-collision sequences. Because of the difference in surface binding energy between Al and Ni atoms, preferential ejection angles of Ni atoms are slightly different from those of Al atoms along the 〈1 1 1〉 ejections. For NiAl, the 〈1 1 1〉 preferential ejections were less prominent than the 〈1 0 0〉 preferential ejections and this can be related to the low efficiency of momentum transfer in Ni-Al collision sequences along 〈1 1 1〉 lattice directions. The low efficiency of momentum transfer due to the mass mismatch can also be responsible for the experimental observation that the preferential ejections in the alloy were less prominent than those in the Ni metal.  相似文献   

3.
This paper describes the second part of a study devoted to the growth of thin Ni-Al alloys after deposition of Al on Ni(1 1 1). In the previous paper [S. Le Pévédic, D. Schmaus, C. Cohen, Surf. Sci. 600 (2006) 565] we have described the results obtained for ultra-thin Al deposits, leading, after annealing at 750 K, to an epitaxial layer of Ni3Al(1 1 1). In the present paper we show that this regime is only observed for Al deposits smaller than 8 × 1015 Al/cm2 and we describe the results obtained for Al deposits exceeding this critical thickness, up to 200 × 1015 Al/cm2. Al deposition was performed at low temperature (around 130 K) and the alloying process was followed in situ during subsequent annealing, by Auger electron spectroscopy, low energy electron diffraction and ion beam analysis-channeling measurements, in an ultra-high vacuum chamber connected to a Van de Graaff accelerator. We evidence the formation, after annealing at 750 K, of a crystallographically and chemically well-ordered NiAl(1 1 0) layer (whose thickness depends on the deposited Al amount), over a Ni3Al “interfacial” layer (whose thickness—about 18 (1 1 1) planes—is independent of the deposited Al amount). The NiAl overlayer is composed of three variants, at 120° from each other in the surface plane, in relation with the respective symmetries of NiAl(1 1 0) and Ni3Al(1 1 1). The NiAl layer is relaxed (the lattice parameters of cc-B2 NiAl and fcc-L12 Ni3Al differ markedly), and we have determined its epitaxial relationship. In the case of the thickest alloyed layer formed the results concerning the structure of the NiAl layer have been confirmed and refined by ex situ X-ray diffraction and information on its grain size has been obtained by ex situ Atomic Force Microscopy. The kinetics of the alloying process is complex. It corresponds to an heterogeneous growth leading, above the thin Ni3Al interfacial layer, to a mixture of Al and NiAl over the whole Al film, up to the surface. The atomic diffusion is very limited in the NiAl phase that forms, and thus the progressive enrichment in Ni of the Al film, i.e. of the mean Ni concentration, becomes slower and slower. As a consequence, alloying is observed to take place in a very broad temperature range between 300 K and 700 K. For annealing temperatures above 800 K, the alloyed layer is decomposed, Al atoms diffusing in the bulk of the substrate.  相似文献   

4.
We used the molecular dynamics simulation with interatomic potentials of the embedded atom method to calculate the high-index surface energies of the surfaces containing the 〈0 0 1〉 axis or 〈−1 1 0〉 axis in f.c.c. metal Al, Cu and Ni at zero temperature. We generalized an empirical formula based on structural unit model for high-index surfaces and present some new formulas that can be used to estimate the surface energy and structural feature of high-index surfaces very well. The results show that the closest surfaces have the lowest surface energy and the surface energies of the closest (1 1 1) surface and the next closest (1 1 0), (1 0 0) surfaces are the extremum on the curve of surface energy versus orientation angle. We also calculated the b.c.c. metal Fe and obtained a similar result. The difference is that in the b.c.c. metal the surface energies of the closest (1 1 0) surface and the next closest (1 0 0), (1 1 2) surfaces are the extremum on the curve of surface energy versus orientation angle. The results of theoretical simulation and the empirical formula consist well with the experiment data.  相似文献   

5.
First-principles periodic slab density-functional theory (DFT) calculations with a plane-wave basis are used to predict the properties of S, Pt, and Hf adsorption on NiAl(1 1 0). Stable adsorption sites are identified, and adsorbate binding energies and structures are predicted. We find that while S adsorbs in a threefold site, the metals prefer to adsorb in the Ni-Ni twofold bridge site. The latter finding is consistent with scanning tunneling microscopy experiments for adsorption of various transition metals on NiAl(1 1 0) by Ho and coworkers. S is predicted to easily diffuse between threefold sites. We find that Pt and Hf both induce significant changes in the local surface structure, changing twofold bridge sites into fourfold coordination sites by drawing next-nearest-neighbor atoms nearly equidistant with the nearest-neighbor atoms. We find Pt favors interaction with Al slightly more than Ni, while Hf shows a particularly strong affinity for Ni compared to Al. We also predict that Hf may diffuse one-dimensionally along Ni rows with a barrier of ≈0.6 eV.  相似文献   

6.
We present ab-initio investigation of the electronic and magnetic structure of TM(0 0 1) surfaces and TM/Cu(0 0 1) systems (TM=Fe, Co, Ni, Cu) with and without hydrogen adsorbed layer. The adsorption energy of hydrogen atom is found to be energetically more stable above the surface layer of Ni(0 0 1) surface than other TM(0 0 1) surfaces. The adsorption energies of hydrogen on TM/Cu(0 0 1) systems are larger than those on TM(0 0 1) surfaces. The relaxed geometries show that hydrogen has a strong influence on the interlayer distance. Furthermore, a marked reduction of Fe, Co, and Ni surface magnetic moments to 2.54, 1.41 and 0.25 μB, respectively, is obtained due to the presence of hydrogen.  相似文献   

7.
Core-level XPS spectra for clean surfaces of Ni3Al, NiAl, and NiAl3 alloys were studied. The clean surfaces were obtained by fracturing in the ultra-high vacuum chamber. The positive chemical shifts of Ni 2p3/2 peak for NiAl and NiAl3 from Ni metal were 0.2 and 1.0 eV, respectively. The negative shift for Al 2p peak and the positive shift for Ni 3p peaks increased with the decreasing concentration of the corresponding elements. The peak position of the bulk plasmon loss peak for Al 2s peak shifted toward higher energy side, and further, the intensity ratio decreased with the decrease in aluminum concentration. Both the peak intensity ratios of Al 2p to Ni 3p determined by factor analysis and convenient separation are proportional to the atomic ratio of aluminum to nickel. The results indicate that the intensity ratio of Al 2p to Ni 3p determined by these two methods can be applied to the quantification for the surface of the nickel-aluminum alloys.  相似文献   

8.
Yuguang Ma 《Surface science》2009,603(2):349-23777
Surface segregation of Pt3M (M = Fe, Co, and Ni) alloys under oxygen environment has been examined using periodic density functional theory. The segregation trend at a (1 1 1) surface is found to be substantially modified by the adsorbed oxygen. Our calculations indicate that under 1/4 monolayer O coverage both the Pt-segregated and M-segregated surfaces are less stable than the non-segregated one. Further analysis reveals that segregation energy under adsorption environments can be expressed as the sum of the segregation energy under vacuum conditions and the adsorption energy difference of the segregated and non-segregated alloy systems. Therefore, the surface segregation trend under adsorption conditions is directly correlated to the surface-adsorbate binding strength.  相似文献   

9.
Adsorption of CO molecules and Pb atoms on the Ni(1 1 1) and Ni3Al(1 1 1) substrates is studied theoretically within an ab initio density-functional-theory approach. Stable adsorption sites and the corresponding adsorption energies are first determined for stoichiometric surfaces. The three-fold hollow sites (fcc for Pb and hcp for CO) are found most favourable on both substrates. Next, the effect of surface alloying by a substitution of selected topmost substrate atoms by Pb or Ni atoms on the adsorption characteristics is investigated. When the surface Al atoms of the Ni3Al(1 1 1) substrate are replaced by Ni atoms, the Pb and CO adsorption energies approach those for a pure Ni(1 1 1) substrate. The Pb alloying has a more substantial effect. On the Ni3Al(1 1 1) substrate, it reduces considerably adsorption energy of CO. On the Ni(1 1 1) substrate, CO binding strengthens slightly upon the formation of the Ni(1 1 1)p(2×2)-Pb surface alloy, whereas it weakens drastically when the Ni(1 1 1)-Pb surface alloy is formed.  相似文献   

10.
The NiPd(1 1 0) alloy surface was studied using low energy electron diffraction to measure the structure and composition of the first three atomic layers. The surface layer is highly enriched in Pd and has a significantly buckled structure. The second layer is also buckled, with displacements even larger than the surface layer. The second layer also exhibits intralayer segregation (chemical ordering), with alternate close-packed rows of atoms being Ni enriched and Pd enriched. The third layer has a structure and composition close to that of the bulk alloy. These results are compared with results for the other low index faces of NiPd, the extensive literature on NiPt alloy surfaces, and the growing body of theoretical literature for NiPd alloy surfaces.  相似文献   

11.
In this paper, the properties and dissolution trends of the surfaces doped with different metal atoms on the Al(1 0 0) surface were investigated by the density functional theory calculations. A surface impurity model was proposed by replacing the topmost surface layer Al atoms by Me (Me = Zn, Ga, In, Sn and Pb) atoms with the coverage of 1/9, 1/4, 1/2, and 3/4 monolayer, respectively. Results show that the surface energy of Me-Al(1 0 0) surfaces depends primarily on the nature of the impurity atom species and the monolayer coverage. The work function of Me-Al surfaces is smaller than that of pure Al(1 0 0) surface, and decreases almost linearly with the amount of Me. It is found that the Me-Al alloys are more easily dissolvable than the pure Al, due to the fact that the electrochemical dissolution potential shifts were negative for all Me-Al(1 0 0) surfaces with respect to the clean pure Al(1 0 0) surface.  相似文献   

12.
We have studied the correlation between the valence electron configuration and the electronic structure of M2AC(0 0 0 1) surfaces (M = Ti, V, Cr; A = Al, Ga, Ge) by density functional theory. The A surface termination is the most stable configuration for all systems studied according to our surface energy data. As the M valence electron population is increased, the surface energy increases by 22% and 12% for A = Al and Ga, respectively, while it decreases by 29% for A = Ge. This can be understood by evaluating the valence electron concentration induced changes in the surface density of states. Antibonding surface Md-Ap states are present as Ti is substituted by Cr in M2AC(0 0 0 1) for A = Al and Ga, while antibonding surface Md-Ap states are not present as Ti is substituted by Cr in M2GeC(0 0 0 1).  相似文献   

13.
The surface relaxation and surface energy of both the mixed AuCu and pure Cu terminated Cu3Au (0 0 1) surfaces are simulated and calculated by using the modified analytical embedded-atom method. We find that the mixed AuCu termination is energetically preferred over the pure Cu termination thereby the mono-vacancy diffusion is also investigated in the topmost few layers of the mixed AuCu terminated Cu3Au (0 0 1) surface. In the mixed AuCu terminated surface the relaxed Au atoms are raised above Cu atoms for 0.13 Å in the topmost layer. All the surface atoms displace outwards, this effect occurs in the first three layers and changes the first two inter-layer spacing. For mono-vacancy migration in the first layer, the migration energies of Au and Cu mono-vacancy via two-type in-plane displace: the nearest neighbor jump (NNJ) and the second nearest neighbor jump (2NNJ), are calculated and the results show that the NNJ requires a much lower energy than 2NNJ. For the evolution of the energy requirements for successive nearest neighbor jumps (SNNJ) along three different paths: circularity, zigzag and beeline, we find that the circularity path is preferred over the other two paths due to its minimum energy barriers and final energies. In the second layer, the NN jumps in intra- and inter-layer of the Cu mono-vacancy are investigated. The calculated energy barriers and final energies show that the vacancy prefer jump up to a proximate Cu site. This replacement between the Cu vacancy in the second layer and Cu atom in the first layer is remunerative for the Au atoms enrichment in the topmost layer.  相似文献   

14.
The empirical electron surface model (EESM) based on the empirical electron theory and the dangling bond analysis method has been used to establish a database of surface energy for low-index surfaces of fcc-metals such as Al, Mn, Co, Ni, Cu, Pd, Ag, Pt, Au, and Pb. A brief introduction of EESM will be presented in this paper. The calculated results are in agreement with experimental and other theoretical values. Comparison of the experimental results and calculation values shows that the average relative error is less than 10% and these values show a strong anisotropy. As we predicted, the surface energy of the close-packed plane (1 1 1) is the lowest one of all index surfaces. For low-index planes, the order of the surface energies is γ(1 1 1) < γ(1 0 0) < γ(1 1 0) < γ(2 1 0). It is also found that the dangling bond electron density and the spatial distribution of covalent bonds have a great influence on surface energy of various index surfaces.  相似文献   

15.
Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between Al and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.  相似文献   

16.
Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)3Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.  相似文献   

17.
We have re-assessed different methods to obtain single terminated perovskite oxide substrate surfaces of SrTiO3, LaAlO3 and NdGaO3. The surfaces have been probed by a combination of atomic and lateral force microscopy, X-ray photoelectron spectroscopy and reflection high-energy electron diffraction. (0 0 1)SrTiO3 surfaces were prepared with HF or plasma etching and annealing, (0 0 1)LaAlO3 surfaces were prepared with or without HCl etching and a consecutive annealing at 750-1100 °C, and (1 1 0)NdGaO3 surfaces were only annealed. Two of the recipes have previously been suggested to result in A-site terminated surfaces. However, except for the case of high-temperature annealed LaAlO3 where we observe a double-terminated surface, our data suggest that the single terminated surfaces obtained by these methods were of B-site type.  相似文献   

18.
Positron probes of the Si(1 0 0) surface that plays a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. This paper presents a theoretical study of positron “image-potential” surface states and annihilation characteristics of surface trapped positrons at the Si(1 0 0) surface. Calculations are performed for the reconstructed Si(1 0 0)-p(2 × 2) surface using the modified superimposed-atom method to account for discrete-lattice effects, and the results are compared with those obtained for the non-reconstructed and reconstructed Si(1 0 0)-(2 × 1) and Si(1 1 1)-(7 × 7) surfaces. The effect of orientation-dependent variations of the atomic and electron densities on localization and extent of the positron surface state wave function at the semiconductor surface is explored. The positron surface state wave function is found to extend into the Si lattice in the regions where atoms are displaced from their ideal terminated positions due to the p(2 × 2) reconstruction. Estimates of the positron binding energy and positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Si. The observed sensitivity of annihilation probabilities to crystal face indicates that positron spectroscopy techniques could serve as an important surface diagnostic tool capable of distinguishing different semiconductor surfaces and defining their state of reconstruction.  相似文献   

19.
All-electron full-potential linearized augmented plane-wave calculations of the surface energy, work function, and interlayer spacings of close-packed metal surfaces are presented, in particular, for the free-electron-like metal surfaces, Mg(0 0 0 1) and Al(1 1 1), and for the transition metal surfaces, Ti(0 0 0 1), Cu(1 1 1), Pd(1 1 1), and Pt(1 1 1). We investigate the convergence of the surface energy as a function of the number of layers in the slab, using the Cu(1 1 1) surface as an example. The results show that the surface energy, as obtained using total energies of the slab and bulk from separate calculations, converges well with respect to the number of layers in the slab. Obviously, it is necessary that bulk and surface calculations are performed with the same high accuracy. Furthermore, we discuss the performance of the local-density and generalized gradient approximations for the exchange-correlation functional in describing the various surface properties.  相似文献   

20.
We have studied the structures and stabilities of copper nano-particles and the melting properties of copper surfaces using interatomic potential-based molecular dynamics simulations, where the (1 1 1) surface has been shown to be the most stable in terms of surface energy and melting behaviour. Low energy shapes of nano-particles are influenced by the surfaces present and therefore have a higher proportion of (1 1 1) surface. The effect of surface structure on stability becomes less marked as the size of the nano-particle is increased. Melting is observed to occur below the bulk melting temperature in all the surfaces investigated, at increasingly lower temperatures from the (1 1 1), (1 0 0), (1 1 0) down to the (2 1 0) surface, confirming their order of decreasing stability. The melting processes of defective close-packed copper surfaces were also simulated. Steps, kinks, and facets were all shown to accelerate the melting of the surfaces. The melting is shown to initiate at the site of the defect and the results demonstrate that it is the low-coordinated atoms, at the step edge or kink, that are more mobile at lower temperatures. These features facilitate surface melting even further below the melting temperature than was observed for the perfect surfaces. Furthermore, facets of (1 0 0) surface were shown to be unstable even at moderate temperatures on the close-packed surface.  相似文献   

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