Surface and subsurface oxide formation on Ni(1 0 0) and Ni(1 1 1)

The oxidation of Ni(1 0 0) and Ni(1 1 1) at elevated temperatures and large oxygen exposures, typical of the methods used in the preparation of NiO(1 0 0) films for surface studies, has been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ incident ions. Oxide film growth proceeds significantly faster on Ni(1 1 1) than on Ni(1 0 0), but on both surfaces oxide penetration occurs to depths significantly greater than 100 Å with total exposures of 1200 and 6000 L respectively. The metal/oxide interface is extremely rough, with metallic Ni extending to the surface, even for much thicker oxide films on Ni(1 1 1). On Ni(1 1 1), NiO growth occurs with the (1 0 0) face parallel to the Ni(1 1 1) surface and the close-packed 〈1 1 0〉 directions parallel. On Ni(1 0 0) the MEIS blocking curves cannot be reconciled with a single orientation of NiO(1 0 0) (with the 〈1 1 0〉 directions parallel) on the surface, but is consistent with the substantial orientational disorder (including tilt) previously identified by spot-profile analysis LEED.     

MeV-ion axial surface-channeling from an electron irradiated KCl(0 0 1) surface

Surface-channeling of protons incident with 5 mrad on an electron-irradiated surface is investigated using a 0.55 MeV beam of protons. The target surface is KCl(0 0 1), which is damaged by electron-stimulated desorption with 5 keV electron irradiation. The direction of the incident beam is adjusted along the 〈1 0 0〉 and 〈1 1 0〉 channeling conditions and the channeling-dips of the scattering yields are observed. The irradiation dose-dependence of the minimum yields and widths of the dips is measured. Two dips are compared, i.e., for the 〈1 0 0〉 and 〈1 1 0〉 channelings. By increasing the irradiation dose up to 2 × 10¹⁶ cm⁻², the dip around the 〈1 0 0〉 axis becomes opened, but that of the 〈1 1 0〉 axis becomes shallow. The irradiated surfaces are observed to have many overlapped terraces of sub-micron with monolayer steps. The surface morphology deformed by the irradiation effects to truncate trajectories of the 〈1 0 0〉 channeling protons. This roughness of the surface is more effective for the trajectories of the 〈1 1 0〉 channeling protons. The protons incident on the rough surface along the 〈1 1 0〉 axis are not reflected from the atomic row but reflected by a potential of the surface with steps. Results by a simple computer simulation of the trajectories of protons at stepped surfaces also indicate the scattering processes.     

Converged properties of clean metal surfaces by all-electron first-principles calculations

All-electron full-potential linearized augmented plane-wave calculations of the surface energy, work function, and interlayer spacings of close-packed metal surfaces are presented, in particular, for the free-electron-like metal surfaces, Mg(0 0 0 1) and Al(1 1 1), and for the transition metal surfaces, Ti(0 0 0 1), Cu(1 1 1), Pd(1 1 1), and Pt(1 1 1). We investigate the convergence of the surface energy as a function of the number of layers in the slab, using the Cu(1 1 1) surface as an example. The results show that the surface energy, as obtained using total energies of the slab and bulk from separate calculations, converges well with respect to the number of layers in the slab. Obviously, it is necessary that bulk and surface calculations are performed with the same high accuracy. Furthermore, we discuss the performance of the local-density and generalized gradient approximations for the exchange-correlation functional in describing the various surface properties.     

Competition between surface energy and interphase energy in transition region and diameter-dependent orientation of silicon nanowires

A small sandwiched transition region between the Au catalysis droplet and silicon nanowires (SiNWs) is proposed to investigate the diameter-dependent orientation of SiNWs grown by the vapor-liquid-solid (VLS) mechanism. Atomic-scale calculation shows that for a given transition region width, there is always a critical diameter. Below the critical value, surface energy dominates and the 〈1 1 0〉 orientation is preferred, whereas at larger diameters, the interphase energy dominates and SiNWs grow along the 〈1 1 1〉 direction. The variability of the critical diameter is also included in our model by adjusting the transition region width. The theoretical results are in agreement with those from experiments.     

Calculation of the formation energies of isolated vacancy and adatom-vacancy pair at low-index surfaces of fcc metals with MAEAM

The formation energies of isolated vacancy and adatom-vacancy pair (where the two are separated by a large distance) at low-index surfaces of fcc metals calculated by using the modifies analytical embedded atom method (MAEAM). The results predict the prevailing formation of vacancies on the surfaces (1 1 1), (1 0 0) (but Pd), Cu and Ni on the (1 1 0) surfaces at low temperature, and the defect formation energies consistently create in the sequence (1 1 0) → (1 0 0) → (1 1 1). With good accuracy, the calculated energy values coincide with those obtained by the embedded atom methods (EAM) and from experiments. The correctness of the method by which calculated the formation energies of point defects on the surface was proved.     

Density functional slab model studies of water adsorption on flat and stepped Cu surfaces

Density functional and periodic slab model calculations are performed to study adsorption of water on various Cu surfaces, focusing on monomers and dimers at the planar Cu surfaces and monomers at stepped ones. Single water molecules tend to weakly bind to atop positions with the molecular plane basically parallel to the substrate surface on the planar surfaces or the step plane on the stepped surfaces with negligible structural deformation of water. The experimental adsorption energies of water on the (1 1 1) and (1 0 0) surfaces are about twice as large as the theoretical values of monomerically adsorbed water. This phenomenon is demonstrated to be due to formation of water clusters and/or existence of surface defects. It is revealed that the most favorable hexagonal ring superstructure on Cu(1 1 0) is a four-layer structure, not the commonly accepted bi-layer configuration. We found that the adsorption energy of monomeric water correlates linearly with following quantities, respectively: the bond length and the stretching frequency of the Cu-O bond, the coordination number of the surface Cu atom, the surface work function of the clean surface and the 1b₁ MO energy shift with respect to the value in the gas phase.     

Ab initio simulation of the BaZrO3 (0 0 1) surface structure

Electronic and atomic structures of different terminations of the (0 0 1) non-polar orientation of BaZrO₃ surfaces have been studied using first-principles calculations. We found that surface energies at both possible surface terminations, BaO and ZrO₂, were very close. The (0 0 1)-BaO and (0 0 1)-ZrO₂ terminated surfaces have bandgap values smaller than that of a bulk BaZrO₃ crystal. In addition, the relative surface stability has been analyzed as a function of chemical environment.     

Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment

A surface preparation method with fine SiO₂ particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm²) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces.     

Angular distributions of atoms sputtered from NiAl{1 1 0} and Ni{1 0 0}

Using the laser post-ionization surface analysis technique, I have for the first time studied angular distributions of Ni and Al atoms sputtered from NiAl{1 1 0}. Emission angular distributions from Ni{1 0 0} have also been measured. I have observed preferential emissions of Ni and Al atoms along 〈1 1 1〉 and 〈1 0 0〉crystallographic directions for NiAl{1 1 0} and of Ni atoms along 〈1 1 0〉 and 〈1 0 0〉 directions for Ni{1 0 0}. The observed preferential ejections can be explained in terms of the theory of focusing-collision sequences. Because of the difference in surface binding energy between Al and Ni atoms, preferential ejection angles of Ni atoms are slightly different from those of Al atoms along the 〈1 1 1〉 ejections. For NiAl, the 〈1 1 1〉 preferential ejections were less prominent than the 〈1 0 0〉 preferential ejections and this can be related to the low efficiency of momentum transfer in Ni-Al collision sequences along 〈1 1 1〉 lattice directions. The low efficiency of momentum transfer due to the mass mismatch can also be responsible for the experimental observation that the preferential ejections in the alloy were less prominent than those in the Ni metal.     

Calculation of the surface energy of bcc transition metals by using the second nearest-neighbor modified embedded atom method

The surface energies for 24 surfaces of all bcc transition metals Fe, Cr, Mo, W, V, Nb and Ta have been calculated by using the second nearest-neighbor modified embedded atom method. The results show that, for all bcc transition metals, the order among three low-index surface energies E_(1 1 0) < E_(1 0 0) < E_(1 1 1) is in agreement with experimental results and E_(1 1 0) is also the lowest surface energy for various surfaces. So that from surface energy minimization, the (1 1 0) texture should be favorable in the bcc films. This is also consistent with experimental results. The surface energy for the other surfaces increases linearly with increasing angle between the surfaces (h k l) and (1 1 0). Therefore, a deviation of a surface orientation from (1 1 0) can be used to estimate the relative values of the surface energy.     

Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈1 1 1〉

This study investigated the dependence of surface blistering and exfoliation phenomena on post-annealing time in H⁺-implanted Si〈1 1 1〉. Czochralski-grown n-type Si〈1 1 1〉 wafers were room-temperature ion-implanted with 40 keV hydrogen monomers to a fluence of 5×10¹⁶ cm⁻², and followed by furnace annealing treatments at 400 and 500 °C for various durations ranging from 0.25 to 3 h. The corresponding analysis results for Si〈1 0 0〉 [1] (Liang et al., 2008); [2] (Bai, 2007) were adopted in order to make comparisons. The evolution of blister formation and growth for Si〈1 1 1〉 at 400 °C has a shorter characteristic time compared to Si〈1 0 0〉. However, there is a longer characteristic time when annealing takes place at 500 °C. In addition, no craters were observed for Si〈1 1 1〉 annealed at 400 °C while the opposite is true for Si〈1 0 0〉. The evolution of crater development for Si〈1 1 1〉 annealed at 500 °C has a longer characteristic time compared to Si〈1 0 0〉. These results are attributed to the fact that compared to Si〈1 0 0〉, Si〈1 1 1〉 has a smaller surface binding energy of silicon atoms and a larger areal number density of silicon atoms on the plane perpendicular to the incident-ion axis. Furthermore, Si〈1 1 1〉 has a greater areal number density, smaller diameter, and a similar covered-area fraction of optically-detectable blisters compared to Si〈1 0 0〉. However, Si〈1 1 1〉 has a lower areal number density and a smaller covered-area fraction of craters than does Si〈1 0 0〉. Increasing post-annealing temperature from low (e.g. 400 °C) to high (e.g. 500 °C) revealed that Si〈1 1 1〉 tends to create more blisters while Si〈1 0 0〉 tends to develop larger blisters as well as create more craters.     

Density functional theory investigation of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0)

The adsorption of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0) has been investigated using density functional theory (DFT). While experimental studies of CN on Cu(1 1 1) show the molecular axis to be essentially parallel to the surface, the normally-preferred DFT approach using the generalised gradient approximation (GGA) yields a lowest energy configuration with the C-N axis perpendicular to the surface, although calculations using the local density approximation (LDA) do indicate that the experimental geometry is energetically favoured. The same conclusions are found for CN on Ni(1 1 1); on both surfaces bonding through the N atom is always unfavourable, in contrast to some earlier published results of ab initio calculations for Ni(1 1 1)/CN and Ni(1 0 0)/CN. The different predictions of the GGA and LDA approaches may lie in subtly different relative energies of the CN 5σ and 1π orbitals, a situation somewhat similar to that for CO adsorbed on Pt(1 1 1) which has proved challenging for DFT calculations. On Ni(1 0 0) GGA calculations favour a lying-down species in a hollow site in a geometry rather similar to that found experimentally and in GGA calculations for CN on Ni(1 1 0).     

STM observation of initial growth of Sn atoms on Ge(0 0 1) surface

We have studied initial growth of Sn atoms on Ge(0 0 1) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(0 0 1) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the 〈3 1 0〉 and the 〈1 1 0〉 directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the 〈3 1 0〉 direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(0 0 1) and Si(0 0 1) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface strain.     

Novel mesoscale defect structure on NiO(1 0 0) surfaces by atomic force microscopy

Cleaved NiO(1 0 0) surfaces were imaged with atomic force microscopy (AFM) to determine defect concentrations and morphology. Random 〈0 1 0〉 and 〈0 0 1〉 oriented steps, which have been previously characterized, were the most common defect observed on the cleaved surface and formed with step heights in multiples of 2.1 Å, the Ni-O nearest-neighbor distance, and terrace widths in the range of 25-100 nm. In addition, the surface showed novel mesoscale (∼0.5-2 μm) square pyramidal defects with the pyramid base oriented along 〈1 0 0〉 symmetry related directions. Upon etching, the pyramidal defects converted to more stable cubic pits, consistent with (1 0 0) symmetry related walls. The square pyramidal pits tended to cluster or to form along step edges, where the weakened structure is more susceptible to surface deformations. Also, a small concentration of square pyramidal pits, oriented with the base of the pyramid along 〈0 1 1〉, was observed on the cleaved NiO surfaces. For comparison purposes, chemical mechanical polished (CMP) NiO(1 0 0) substrates were imaged with AFM. Defect concentrations were of comparable levels to the cleaved surface, but showed a different distribution of defect types. Long-ranged stepped defects were much less common on CMP substrates, and the predominant defects observed were cubic pits with sidewalls steeper than could be accurately measured by the AFM tip. These defects were similar in size and structure to those observed on cleaved NiO(1 0 0) surfaces that had been acid etched, although pit clustering was more pronounced for the CMP surfaces.     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Comparative DFT study of the adsorption of 1,3-butadiene, 1-butene and 2-cis/trans-butenes on the Pt(1 1 1) and Pd(1 1 1) surfaces

The interaction of 1,3-butadiene, 1-butene and 2-cis/trans-butenes on the Pt(1 1 1) and Pd(1 1 1) surfaces has been studied with density functional theory methods (DFT). The same most stable adsorption modes have been found on both metal surfaces with similar adsorption energies. For 1,3-butadiene the 1,2,3,4-tetra-σ adsorption structure is shown to be the most stable one, in competition with a 1,4-metallacycle-type mode, which is only less stable by 10-12 kJ mol⁻¹. On Pt(1 1 1) these total energy calculations were combined with simulations of the vibrational spectra. This confirms that the 1,2,3,4-tetra-σ adsorption is the most probable adsorption structure, but cannot exclude the 1,4-metallacycle as a minority species. Although similar in type and energy, the adsorption on the Pd(1 1 1) surface shows a markedly different geometry, with a smaller molecular distortion upon adsorption. The most stable adsorption structure for the butene isomers is the di-σ-mode. Similarly to the case of the 1,3-butadiene, the adsorption geometry is closer to the gas phase one on Pd than on Pt, hence explaining the different spectroscopic results, without the previously assumed requirement of a different binding mode. Moreover the present study has shown that the different selectivity observed on Pt(1 1 1) and Pd(1 1 1) for the hydrogenation reaction of butadiene cannot be satisfactory explained by the single comparison of the relative stabilities of 1,3-butadiene and 1-butene on these metals.     

Driving force for the WO3(0 0 1) surface relaxation

The optimized structure of the WO₃(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO₂, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO₃ depends weakly on the distortions and tilting of the WO₆ octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10⁻² eV/Ų for the cubic ReO₃-like, c(2 × 2)O-terminated surface to 2.2 × 10⁻² eV/Ų for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO₃. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO₃(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.     

First-principles investigations of iridium low index surfaces

We report density functional theory (DFT) calculations for the surface energy, work function, and interlayer spacings for Ir(1 1 1), Ir(1 0 0), and Ir(1 1 0) surfaces using pseudopotential method and plane waves basis set. We investigate the convergence of the surface energy as a function of the number of layers in the slab for the Ir(1 0 0) surface. The results show that the surface energies calculated using the bulk total energies obtained by a fit to a series of slab total energies converge within 0.01 J/m². We also investigate the convergence of the work function and interlayer spacings as a function of the number of layers in the slab, for the Ir(1 0 0) surface. Employing the local-density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange correlation functional, we obtained a very good agreement of the calculated surface energies and work functions with experimental results. For the studied surfaces, the calculations give interlayer relaxations that are in an excellent agreement with available low-energy electron diffraction (LEED) analysis. Furthermore, we discuss the performance of the LDA and GGA for the exchange correlation functional in describing the various surface properties. The results show that calculations using GGA give results that are in a better agreement with experiment than the LDA.     

Atomistic simulation of point defects at low-index surfaces of noble metals

The formation energies and the migration energies of an isolated vacancy and adatom formed on low-index surfaces are calculated with MAEAM for three noble metals Cu, Ag and Au. The results indicate that the formation energies of an isolated vacancy or adatom increase with increasing atom density in the sequence (1 1 0) → (1 0 0) → (1 1 1), and it is more difficult to form an adatom than to form a vacancy at the same surface. For the mobility of an isolated vacancy, the migration energy grows in the sequence (1 0 0) → (1 1 0) → (1 1 1) for each noble metal. However, a much less migration energy is obtained for the migration of an adatom on (1 1 1) surface.     

Details of crystalline growth in co-deposited electroplated nickel films with hard (nano)particles

Electroplated nickel dispersion films with incorporated hard particles, primarily titanium oxide, were studied. A sufficient dispersion of nanometre-scaled particles in Watts solution was reached by application of ultrasonic energy to the galvanic bath. Crystal morphology, mean grain size and formation of textures were examined by electron backscattering diffraction (EBSD), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The typical columnar structure of pure Ni films was refined by means of ultrasound. Incorporation of micron-sized TiO₂ particles generates additional nucleation surfaces in contrast to SiC particles. Textures of the subsequent columnar nickel crystals change from 〈2 1 1〉 (silent condition) or 〈1 1 0〉 (ultrasonic condition) fibre textures in growth direction to 〈1 0 0〉 and 〈1 1 1〉 textures under the influence of nanoparticle incorporation. Moreover, nanoparticles remarkably decrease the grain size and grain aspect ratio. Their incorporation takes place inside the crystals as well as between grains.