A LEED, TPD and HREELS investigation of NO adsorption on Sn/Pt(111) surface alloys

The adsorption of NO on Pt(111), and the (2 × 2)Sn/Pt(111) and (√3 × √3)R30°Sn/Pt(111) surface alloys has been studied using LEED, TPD and HREELS. NO adsorption produces a (2 × 2) LEED pattern on Pt(111) and a (2√3 × 2√3)R30° LEED pattern on the (2 × 2)Sn/Pt(111) surface. The initial sticking coefficient of NO on the (2 × 2)Sn/Pt(111) surface alloy at 100 K is the same as that on Pt(111), S₀ = 0.9, while the initial sticking coefficient of NO on the (√3 × √3)R30°Sn/Pt(111) surface decreases to 0.6. The presence of Sn in the surface layer of Pt(111) strongly reduces the binding energy of NO in contrast to the minor effect it has on CO. The binding energy of β-state NO is reduced by 8–10 kcal/mol on the Sn/Pt(111) surface alloys compared to Pt(111). HREELS data for saturation NO coverage on both surface alloys show two vibrational frequencies at 285 and 478 cm⁻¹ in the low frequency range and only one N-O stretching frequency at 1698 cm⁻¹. We assign this NO species as atop, bent-bonded NO. At small NO coverage, a species with a loss at 1455 cm⁻¹ was also observed on the (2 × 2)Sn/ Pt(111) surface alloy, similar to that observed on the Pt(111) surface. However, the atop, bent-bonded NO is the only species observed on the (√3 × √3)R30°Sn/Pt(111) surface alloy at any NO coverage studied.     

Observation of sputtering damage on Au(111)

The morphology of a Au(111) surface has been observed with the STM (scanning tunneling microscope) after ion bombardment with 2.5 keV Ne⁺ ions at about 400 K. Mostly triangular and hexagonal shaped vacancy islands are seen in the STM topographs. They are bounded by monatomic steps, oriented along the closed packed 110 directions. The general morphology confirms the conclusions inferred from TEAS (thermal energy atom scattering) measurements on ion bombarded Pt(111) surfaces. The observation of a propensity for the formation of {100} microfacetted 110 ledges is discussed.     

IR spectroscopy of adsorbed dinitrogen: a sensitive probe of defect sites on Pt(111)

Fourier transform infrared reflection absorption spectroscopy (FT-IRAS) has been used to probe the non-dissociative adsorption of N₂ on an atomically clean Pt(111) single crystal. In contradiction to a previous IRAS study of nitrogen adsorption on a Pt(111) foil at 120 K, no nitrogen infrared (IR) band was observed on a fully annealed Pt(111) surface at 90 K. Following Ar⁺ ion bombardment, adsorption of nitrogen at 90 K produces an intense IR band at 2222 cm⁻¹ attributed to the N---N stretching mode of molecular nitrogen adsorbed on defect sites produced by ion bombardment. Annealing the Ar⁺ ion sputtered surface to a temperature above 750 K completely suppresses the adsorption of nitrogen at 90 K. Based on these and other results, we postulate that nitrogen adsorbs at 90 K mainly on monovacancies on platinum. We suggest that this specific adsorption occurs by sigma donation from nitrogen to the base of monovacancy sites which possess a low d-electron density compared to surface Pt atoms.     

Energy loss dependent transversal etching rates of heavy ion tracks in plastic

By the method of electrolytical etching track etching rates V_t and corresponding transversal track etching rates V_trans of single heavy ion tracks in thin Makrofol KG foils have been measured at ion energies from 10–480 MeV/u. Makrofol KG foils of 8 μm thickness were irradiated perpendicular to the surface with ⁷⁹Au and ⁵⁴Xe ions at specific energies with energy loss values of REL=(10–90) ^*10³ MeVcm²/g at GSI Darmstadt, Germany, and Lawrence Berkeley Lab., Cal., USA. Using the electrolytical etching method by measuring the resistance of the foil during the etching process (etching conditions: 6n NaOH, room temperature and controlled 50° C) the breakthrough time and track etching rates V_t, V_trans and V_m (bulk etching rate) were analysed. Response curves (V_t/V_m)-1 as a function of Restricted Energy Loss (REL), the maximum extension of the ion induced damage perpendicular to the ion path and the dimension of the ion track core depending on the deposited energy can be estimated.     

A multitechnique surface science examination of Sn deposition on Pt(100)

Interfaces prepared by vapor deposition of Sn onto Pt(100) surfaces have been examined using the following techniques: Auger electron and X-ray photoelectron spectroscopy (AES and XPS), low-energy electron diffraction (LEED), and low-energy ion surface scattering (LEISS) with Ne⁺ ions. Tin deposition was conducted at 320 and 600 K, and the surface composition and order was examined as a function of further annealing to 1200 K. The AES uptake plots (signal versus deposition time) indicate that the Sn growth mode can be described by a layer-by-layer process only up to one adayer at 320 K. Some evidence of 3D growth is inferred from LEED and LEISS data for higher Sn coverages. For deposition at 600 K, AES data indicate significant interdiffusion and surface alloy formation. LEED observations (recorded at a substrate temperature of 320 K) show that the characteristic hexagonal Pt(100) reconstruction disappears with Sn exposures of 4.6 × 10¹⁴ atoms cm² (θ_Sn = 0.35 monolayer (ML)). Further Sn deposition results in a c(2 × 2) LEED pattern starting at a coverage of slightly above 0.5 ML. The c(2 × 2) LEED pattern becomes progressively more diffuse with increasing Sn exposure with eventual loss of all LEED features above 2.2 ML. Annealing experiments with various precoverages of Sn on Pt(100) are also described by AES, LEED, and LEISS results. For specific Sn precoverages and annealing conditions, c(2 × 2), p(3√2 × √2)R45°, and a combination of the two LEED patterns are observed. These ordered LEED patterns are suggested to arise from ordered PtSn surface alloys. In addition, the chemisorption of CO and O₂ at the ordered annealed Sn/Pt(100) surfaces was also examined using thermal desorption mass spectroscopy (TDMS), AES, and LEED.     

On the production and annealing of bombardment induced surface damage on a nickel (110) surface

The production and annealing of damage on a nickel (110) surface has been studied with low energy ion scattering (LEIS) and the results are discussed and compared with previously reported LEED, LEIS and TEM results. It is concluded that the production of damage on crystal surfaces which remain crystalline under ion bombardment may be explained in terms of the nucleation and growth of vacancy clusters. It is found that the damage, as observed by ion scattering, saturates at a level which does not depend on such bombardment conditions as temperature or ion species. The experiments indicate that at saturation, the surface is in a state of dynamic equilibrium in which the rates of creation and loss of surface pits are equal. Expressions are derived to explain both the present and previously reported ion scattering results. The annealing measurements show that two different anneal processes can be distinguished.     

Ripening of subsurface amorphous C clusters formed by low energy He ion bombardment of graphite

Surfaces of highly oriented pyrolytic graphite (HOPG) were bombarded with 100 eV and 500 eV He ions at ion doses of a few 10¹⁵ cm² and temperatures ranging from 300 K to 800 K. AFM images were recorded to investigate the topography of the surfaces after ion bombardment. Supplementary electron energy loss (EEL) and thermal desorption (TD) spectra were measured to determine the C sp² fraction of the bombarded surfaces and the amount of trapped He. The temperature at which He ion bombardment was performed had a drastic effect on the surface structure and topography of the targets on the angstrom-scale and micrometer-scale as well. At 300 K, limited defect atom transport revealed an amorphous but relatively flat HOPG surface. Bombardment at 400 K leads to a granular structure of small protrusions in micrometer-scale AFM images, however, without crystalline order on the surface. The protrusions are due to the formation of subsurface clusters of carbon formed by atoms displaced by ion irradiation. Towards higher temperatures during bombardment the clusters agglomerate and cause the surface layers to bend upwards in dome-like shapes. Simultaneously, the microscopic order of the graphite lattice recovers. At 800 K large areas of the top layer retain their order during bombardment, however, a small number of domes indicate that there still exist some subsurface C clusters. The cluster–cluster distance deduced from the dome distribution indicates that the clusters grow through a ripening process. Annealing of graphite at high temperatures subsequent to ion bombardment at low temperatures is much less effective for recovering the surface crystallinity than ion bombardment at high temperature.     

Early stage in low energy ion-induced damage on InP(110) surface

The change in the short-range order created by ion milling in the near surface region of InP single crystals was investigated by primary beam diffraction modulated electron emission (PDMEE). The very early stage of the damage creation by low energy (0.6–1 keV) Ar ions in normal and oblique incidence was studied. A simple model based on the weighted combination of perfectly crystalline and completely amorphous regions was used to model the experimental results. Evidence of a subsurface nucleation of the amorphization process was found. We also found that the total sputtering yield is markedly dependent on the ion dose, being on the undamaged surface much larger than its steady state value. Low energy electron diffraction (LEED) measurements were also performed to correlate long-range and short-range order removal by ion bombardment. Finally, the ion damage on the GaAs and InP surfaces was comparatively discussed.     

A NEXAFS and UPS study of the adsorption of tetrachloroethylene, trichloroethylene, iso-, cis-and trans-dichloroethylene on platinum surfaces at 95 K: multilayers and monolayers

UPS spectra of multilayers and monolayers of chlorinated ethylene molecules condensed or adsorbed on Pt(111) and Pt(110)(1 × 2) surfaces at 95 K are in close agreement. It shows that adsorption of these molecules is not dissociative and that they are weakly bonded to the surfaces in the monolayer range. NEXAFS has also been used in the case of Pt(111) samples. The multilayer spectra compare well with the analogous spectra of the fluorinated molecules, and the spacings between the various C 1s levels agree with the corresponding values for the π^* transitions. This shows that these resonances involve C 1s core level transitions to unoccupied π^* levels, which are located at almost the same energy in the excited state. The polarization dependence of the synchrotron light indicates that for monolayers the C=C axis and molecular planes arc parallel to the surface. The π^* resonance widths confirm that the adsorption of all chlorinated molecules is not dissociative at low temperatures, as suggested from the catalytic destruction of unsaturated chlorinated C2 compounds which occurs only at high temperatures. Above 120–130 K and under vacuum, desorption depletes the surface without conversion to a more firmly bonded species, a process occurring under catalytic conditions.     

TPD study of the adsorption and reaction of nitromethane and methyl nitrite on ordered Pt–Sn surface alloys

The adsorption and reaction of the isomers nitromethane (CH₃NO₂) and methyl nitrite (CH₃ONO) on two ordered Sn/Pt(111) surface alloys were studied using TPD, AES, and LEED. Even though the Sn–O bond is stronger than the Pt–O bond and Sn is more easily oxidized than Pt, alloying with Sn reduces the reactivity of the Pt(111) surface for both of these oxygen-containing molecules. This is because of kinetic limitations due to a weaker chemisorption bond and an increased activation energy for dissociation for these molecules on the alloys compared to Pt(111). Nitromethane only weakly adsorbs on the Sn/Pt(111) surface alloys, shows no thermal reaction during TPD, and undergoes completely reversible adsorption under UHV conditions. Methyl nitrite is a much more reactive molecule due to the weak CH₃O–NO bond, and most of the chemisorbed methyl nitrite decomposes below 240 K on the alloy surfaces to produce NO and a methoxy species. Surface methoxy is a stable intermediate until 300 K on the alloys, and then it dehydrogenates to evolve gas phase formaldehyde with high selectivity against complete dehydrogenation to form CO on both alloy surfaces.     

Ag/Si（111）超薄膜光学二次谐波强度变化与结构相变研究

在130-830K温度范围内,系统研究了Si（111）-√3×√3-Ag和Si（111）-3×1-Ag超薄膜重构表面的光学二次谐波的温度依赖性,分析了信号强度的变化和表面结构之间的关联.结果表明,对于Si（111）-3×3-Ag结构薄膜表面而言,在130K到320 K的温度范围内,表面光学二次谐波信号强度的变化中没有出...     

Ion beam enhanced deposition of AINxOy alloys on InP

AIN_xO_y alloy films are deposited on InP by low energy (20 eV) ion beam enhanced reactive evaporation of aluminum in ultra-high vacuum. The resistivity of the films ranges between 10¹⁵ and 10¹⁶ Ω cm and the dielectric strength exceeds 10⁶ V/cm. The energy of the ions is kept below the threshold energy (found to be in the range 20–100 eV) beyond which ion bombardment of InP surface results in irreversibly degraded electronic properties. Despite this precaution, further improvement of interface properties (implying lowering of ion energy and appropriate post-annealing schemes of the structures) are required for a full development of this technique, which is compatible with the molecular beam epitaxy technology.     

Thermal faceting of (110) and (111) surfaces of MgO

Using LEED, we have observed the thermal faceting of MgO (110) and (111) surfaces into sets of (100) faces. Some faceting occurs under ion bombardment at room temperature, and annealing at 900–1400 K by means of electron bombardment produces complete faceting, with facets up to 1 μm across. These observations are consistent with theories of the stability of ionic crystal surfaces.     

砷化镓中质子注入之研究

本文中,我们研究了砷化镓中质子注入及退火恢复过程。实验用晶向<100>偏1—3°,掺Sn 5×10¹⁷-1×10¹⁸cm^-3的单晶,室温下质子注入,注入能量E约8×10⁴—2×10⁶eV,用A-B腐蚀剂对注入质子样品的解理面显结,测得质子注入高阻层的纵向深度x_j和径向扩展x_L与注入能量E的定量关系。然后,对注入质子样品,在150—800℃下退火5分钟,用双晶衍射仪研究了样品的应变恢复过程,在静电计上测量了高阻阻值随退火温度的变化。根据实验结果,讨论了砷化镓中质子注入的射程R_p,电子阻止本领S_n(E)和核阻止本领S_e(E),以及质子注入形成高阻和退火恢复的机理。 关键词：     

Low energy electron diffraction studies of the surfaces of molecular crystals (ice,ammonia, naphthalene,benzene)

Low Energy Electron Diffraction (LEED) has been used to study the surface structures of thin films of molecular crystals. The samples were grown epitaxially on metal single crystal substrates at low temperatures. Both Pt(111) and Ag(111) surfaces were used as substrates in order to identify the influence of the substrate on molecular film structure. Previous observations of ice (0001) and naphthalene (001) surfaces on films grown on Pt(111) substrates [Surface Sci. 55 (1976) 413], were confirmed using the Ag(111) substrate. The NH₃(111) and benzene (111) surfaces were also studied on films grown on either substrate. All observed molecular crystal surfaces showed no evidence of surface reconstruction. To minimize sample charging and electron beam induced damage, LEED experiments were performed on samples of thickness less than 10?10² nm, with low energy electron exposures less than 1 C cm^?2. The maximum thickness and exposure values were characteristic of the particular molecular crystal. The relationship between the structure of the initial adsorbed monolayer and the molecular crystal orientation is discussed.     

Cu在Pt表面扩散激活能和扩散系数的ASED-MO计算

本文应用ASED-MO方法,计算研究了Cu在Pt(111),(100),(110)表面的扩散问题。Cu原子在上述三个表面上的扩散激活能的计算结果分别为0.167eV,0.162eV和0.668eV;300K时的扩散系数分别为3.04×10¹⁰m²/s,3.69×10^-10m²/s和2.42×10^-18m²/s。计算结果表明,Cu原子在Pt(111)和(100)面上,扩散激活能很小,极易迁移,而在(110)面上,激活能较大,扩散系数甚小。     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Hydrogen action in the surface space charge region of highly doped silicon

The action of atomic hydrogen on clean cleaved (1 1 1) surfaces of highly doped silicon samples, both phosphorus ([n] = 2 × 10¹⁹ cm^-3) and boron ([p] = 4 × 10¹⁹ cm^-3) doped has been compared to the case of lightly doped samples ([n] = 1 × 10¹⁴ cm^-3). Once cleaved under ultra high vacuum, the samples were exposed to increasing doses of atomic hydrogen up to saturation. Before and after each hydrogen exposure, the Si(1 1 1) 2 × 1 surface was studied by low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). The compared PYS measurements show that H atoms adsorbed on the Si(1 1 1) surface at room temperature do totally compensate the shallow-acceptor impurities (boron) and only partially the shallow-donor impurities (phosphorus) in the space charge region. They also remove the surface dangling bond states. These effects are reversible upon heating under vacuum. Both surface stresses and space charge electric field play a role in this compensation effect.     

Development of an intense pulsed metallic ion beam source

Intense pulse metallic ion beams (Al⁺, Cu⁺, and Pb⁺) were produced by a magnetically insulated ion diode having a metal anode. Metal ion plasmas on the anode could be generated through enhanced electron bombardment by using a radial cathode. The energy, current density, and duration time of the lead ion beam were 30~140 keV, ~7.5 A/cm² (total ion current ⩾0.5 kA), and 800 ns, respectively. The ion current density exceeded the space-charge-limited current by a factor of 50. The lead ions in the first-to-sixth states of ionization were detected by a Thomson-parabola ion-spectrometer together with light loss, such as C⁺ and O ⁺. The ratio of the ion current of heavy metals to the total ion current was measured using a magnetic mass analyzer with a charge collector. The ratio was about 90% for a lead ion beam and 20~50% for Al and Cu ion beams     

Structure and properties of molybdenum implanted with high-flux carbon ion

High purity molybdenum was implanted by C ion in a metal vapour vacuum arc (MEVVA) implanter. The influence of implantation parameters was studied by varying ion fluence and ion current density. The samples were implanted by 45 keV C ion with fluences from 1×10¹⁵ to 1×10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and nanoindenter. Different morphologies were observed on the surfaces of the as-implanted samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of β-Mo₂C with ion fluences equal to or larger than 1×10¹⁶ ions/cm², and formation of -Mo₂C with ion fluence of 1×10¹⁸ ions/cm². The maximum nanohardness and maximum modulus of the as-implanted samples increased gradually with increasing ion fluence, and reached the corresponding maximum values with ion fluence of 1×10¹⁸ ions/cm². The experimental results suggest that the structure and properties of the as-implanted Mo samples exhibited strong dependence on implantation parameters.