Stray-field imaging of quadrupolar nuclei of half integer spin in solids

A report is presented on the observation of Hahn echoes from the following quadrupolar nuclei of half integer spin (I) in polycrystalline solids in the large static magnetic field gradient (37.5 T/m) which exists in the fringe field of a superconducting solenoid: ⁷Li, ²³Na, ¹¹B, ⁶⁵Cu (I = 3/2); ²⁷Al (I = 5/2); ⁵¹V, ⁵⁹Co (I = 7/2); and ¹¹⁵In (I = 9/2). ²³Na echo-trains from NaCl (with non-selective excitation) and from Na₂SO₄ (with selective excitation) are compared quantitatively for two different RF pulse sequences: 90_x-(τ-90_y-τ-echo-)_n and 90_x-(τ-90_x-τ-echo-)_n. The signals obtained from RF pulses corresponding to non-selective 90 ° pulses were shown to be quantitative, whereas in the selective case smaller signals were obtained since only the central transition contributed. The loss of signal from this cause can be distinguished from small signals resulting from low density of nuclei by use of the second sequence. A ⁷Li image obtained from LiF in a cylindrical glass-vial is shown.     

On the rotational partition function for tetrahedral molecules

A rigorous calculation of the quantum-mechanical rotational partition function for tetrahedral XY₄ molecules yields Q_r = ( )(2I_Y + 1)⁴π ^- exp(/4), where I_Y is the spin of the Y nucleus, and ≡ Bhc/kT. This result is accurate to 1 per cent or better for all values of B and T such that < .     

In-band M1 and E2 transition rates and collective structures in Ba

Subpicosecond mean lifetimes of eight excited states in ¹²⁸Ba populated via the ⁹⁶Zr(³⁶S,4n) reaction were measured by the Doppler-shift attenuation (DSA) technique using a line-shape analysis. The differential decay-curve method (DDCM) was applied for the lifetime determination. The B(E2) values in the yrast band indicate that the first band-crossing is with a proton S-band. The configuration πh_11/2d_5/2 of the negative-parity semi-decoupled bands is confirmed by the measured B(E2, I → I − 2) and B(M1, I → I − 1) transition strengths. The higher-lying “dipole” band in ¹²⁸Ba can be described as a high-K four-quasiparticle band built on the prolate configuration (πh_11/2d_5/2) (νh_11/2g_7/2).     

Measurement of transition quadrupole moments of high-spin states in the N=74 isotones Pr, Ce and La

The Doppler-Shift Attenuation Method has been used to extract transition quadrupole moments of high-spin bands in the N=74 isotones ¹³³Pr, ¹³²Ce and ¹³¹La, produced in the ³⁷Cl + ¹⁰⁰Mo reaction. The results appear to be configuration dependent and, for ¹³³Pr and ¹³²Ce, the involvement of Ω=1/2 νh_9/2 and νf_7/2 intruder orbitals appears to enhance the collectivity at high spin (I>25 ).     

Low frequency impedance of a round superconducting wire

We calculated the electric field E on the surface of a straight superconducting wire with circular cross-section carrying AC transport current I=I_acosωt. Performing the Fourier analysis of E, we found that both components of the first harmonic have the same form: the critical current I_c in prefactor and the rest depending on the ratio F=I_a/I_c. The in-phase component leads to the classical result of loss calculation, while the out-of-phase component was derived for the first time. Thus the wire can be symbolized by a complex self-inductance L₁(I)=L₁′(I)−jL₁″(I) where L₁′ represents the reactive power while L₁″ the losses. When the lock-in amplifier, used to sort out the components of the first harmonic, is utilized in the wide-band mode, it allows one to determine the magnetic flux penetrated in the wire volume at two significant moments of the AC cycle: at zero current (remanent flux) and at the amplitude value of current.     

Comments on np elastic scattering, 142–800 MeV

Important new data of McNaughton et al. on np Wolfenstein parameters are added to NN phase-shift analysis. At 800 MeV, there is a dramatic improvement and one can see with confidence which way phase shifts are heading from 500 to 800 MeV. Dispersive effects in ³D₁ and ³G₃ herald the onset of I = 0 inelasticity. Phase shifts account naturally for the energy dependence of Δσ_L and Δσ_T for np scattering and do not support the claim of Beddo et al. for an I = 0 dibaryon resonance near 733 MeV.     

The angular intensity correlation functions C(1) and C(10) for the scattering of light from randomly rough dielectric and metal surfaces

We study the statistical properties of the scattering matrix S(q|k) for the problem of the scattering of light of frequency ω from a randomly rough one-dimensional surface, defined by the equation x₃=ζ(x₁), where the surface profile function ζ(x₁) constitutes a zero-mean, stationary, Gaussian random process. This is done by studying the effects of S(q|k) on the angular intensity correlation function C(q,k|q',k')=〈I(q|k)I(q'|k')〉-〈I(q|k)〉〈I(q'|k')〉, where the intensity I(q|k) is defined in terms of S(q|k) by I(q|k)=L^-1₁(ω/c)|S(q|k)|², with L₁ the length of the x₁ axis covered by the random surface. We focus our attention on the C⁽¹⁾ and C⁽¹⁰⁾ correlation functions, which are the contributions to C(q,k|q',k') proportional to δ(q-k-q'+k') and δ(q-k+q'-k'), respectively. The existence of both of these correlation functions is consistent with the amplitude of the scattered field obeying complex Gaussian statistics in the limit of a long surface and in the presence of weak surface roughness. We show that the deviation of the statistics of the scattering matrix from complex circular Gaussian statistics and the C⁽¹⁰⁾ correlation function are determined by exactly the same statistical moment of S(q|k). As the random surface becomes rougher, the amplitude of the scattered field no longer obeys complex Gaussian statistics but obeys complex circular Gaussian statistics instead. In this case the C⁽¹⁰⁾ correlation function should therefore vanish. This result is confirmed by numerical simulation calculations.     

H$lt;sub$gt;2$lt;/sub$gt;$lt;sup$gt;+$lt;/sup$gt;在强激光场中的解离及其量子调控的理论研究

利用非波恩-奥本海默近似的三维含时量子波包法,理论研究了氢分子离子在强激光场中的解离动力学.通过分析H₂⁺在不同的初始振动态（ν=0–9）和激光场强度下的解离核动能谱,得到了H₂⁺的光解离机理及其随激光场的变化规律.研究结果表明：当激光场的强度I₁=5.0×10¹³ W/cm²时,分子的解离来源于高振动态ν=5–9,其解离机理主要是通过键软化、键硬化和阈下解离过程.当激光场的强度I₂=1.0×10¹⁴ W/cm² 时,H₂⁺在低振动态ν=3–4上的阈上解离起主导作用,而高振动态的键软化、键硬化和阈下解离所占的比重明显地下降了.研究结果为后续的量子调控的实验研究提供了科学的理论预测和指导. 关键词： 光解离 氢分子离子 含时波包法 核动能谱     

The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current–voltage characteristics

The current–voltage characteristics of Zinc (II) [(8-hydroxyquinoline)(1,10-phenanthroline)] complex (Zn(phen)q)/p-type Si/Al diode with interfacial layer have been investigated. The barrier height and ideality factor of the diode were found to be 0.71 eV and 2.05. Zn(phen)q/p-type Si/Al diode shows a metal–insulator–semiconductor structure resulted from presence of series resistance and an interfacial layer. The n and φ_B values obtained the presence of interfacial layer are 1.02 and 0.70 eV, respectively. The effect of series resistance was evaluated using a method developed by Cheung. The R_s and n values were determined from the d ln(I)/dV plot and were found to be 30.43 kΩ and 2.16, respectively. The barrier height and R_s values were calculated from the H(I)–I plot and were found to be 0.70 eV and 30.99 kΩ. The density of the interface states of the Zn(phen)q/p-type Si/Al diode was calculated and was found to be an order of 10¹³ eV⁻¹ cm⁻².     

Sodium-23 MAS NMR study on nuclear quadrupole interaction in NA(1-x)Ag(x)NO2.

Ag-impurity effects on the first- and second-order quadrupole interaction (QI) at ²³Na site in an isomorphic mixed system, Na_1−xAg_xNO₂ (x=0, 0.0084, 0.026, 0.079, 0.094, 0.16), have been investigated by employing ²³Na (I=3/2) magic angle spinning nuclear magnetic resonance (MAS NMR) technique. The central transition (CT) and satellite transition (ST) are simultaneously observed with this system. From the spectral analysis, the quadrupole parameter and its distribution width are obtained as a function of Ag concentration. From the intensity loss of CT MAS centerband and of the envelope function of ST MAS sidebands due to impurities, the range of their influence on the second- and first-order QI is estimated. The estimated ranges contain the second and first neighbouring Na sites from the resonating ²³Na nucleus for the first- and second-order QI, respectively.     

Examination of n-T_9 conditions required by N=50,82,126 waiting points in r-process

We examined the conditions of neutron density(n) and temperature(T_9) required for the N = 50, 82,and 126 isotopes to be waiting points(WP) in the r-process. The nuclear mass based on experimental data presented in the AME2020 database(AME and AME ±Δ) and that predicted using FRDM,WS4, DZ10, and KTUY models were employed in our estimations. We found that the conditions required by the N = 50 WP significantly overlap with those required by the N = 82 ones, except for the WS4 model. In addition, the upper(or lower) bounds of the n-T_9 conditions based on the models are different from each other due to the deviations in the two-neutron separation energies.The standard deviations in the nuclear mass of 108 isotopes in the three N = 50, 82, and 126 groups are about rms = 0.192 and 0.434 Me V for the pairs of KTUY-AME and WS4-KTUY models,respectively. We found that these mass uncertainties result in a large discrepancy in the nn-T_9 conditions, leading to significant differences in the conditions for simultaneously appearing all the three peaks in the r-process abundance. The newly updated FRDM and WS4 calculations can give the overall conditions for the appearance of all the peaks but vice versa for their old versions in a previous study. The change in the final r-process isotopic abundance due to the mass uncertainty is from a few factors to three orders of magnitude. Therefore, accurate nuclear masses of the r-process key nuclei, especially for ~(76) Fe,~(81)Cu,~(127)Rh,~(132)Cd,~(192)Dy, and ~(197)Tm, are highly recommended to be measured in radioactive-ion beam facilities for a better understanding of the r-process evolution.     

Cr4+在MgCaBa-铝酸盐玻璃中的发射及光学增益

研究了四价铬离子掺杂的MgCaBa-铝酸盐玻璃在近红外区的发射光谱,既有源于¹E—³A₂跃迁,位于1.18μm处的窄带,又有源于³T₂—³A₂范围在1.1～1.4 μm内的宽带,利用ASE(Amplified Spontaneous Emission)方法研究了其增益特性,测量了在 632.8nm激发下不同激发长度下的发射光谱,得到其光学增益系数在1.18μm和1.24 μm处分别为B_E=(0.7±0.04)mm^-1和B_T=(0.05±0.005)mm^-1,并根据这种材料的光谱性质,对其作为近红外可调谐激光介质的可能作出评估。     

Temperature dependence of the critical current in YBa2Cu3O7−δ and Bi2Sr2Ca1Cu2O8 Josephson junctions

We have studied the stationary Josephson effect on YBa₂Cu₃O_7−δ (T_c=90 K) and Bi₂Sr₂Ca₁Cu₂ O₈ (T_c=80 K and 87 K for two samples of different origin) ceramic based junctions. The temperature dependence of the critical current near T_c has been found as I_c≈(T_c-T) for the Y-Ba-Cu-O samples indicating that they should be classified as S-N-I-N-S type junctions. The I-V curves of the Bi-Sr-Ca-Cu samples show the typical behaviour of S-I-S structures. Using Ambegaokar-Baratoff's theory for Bi₂Sr₂Ca₁Cu₂O₈, the temperature dependence of the superconducting state gap Δ(T) was calculated and it was evaluated that 1.452Δ(0)/k_BT_c3.5.     

1-forms over the moduli space of irreducible connections defined by the spectrum of Dirac operators

Let (P) be the moduli space of irreducible connections of a G-principal bundle P over a closed Riemannian spin manifold M. Let D_A be the Dirac operator of M coupled to a connection A of P and f a smooth function on M. We consider a smooth variation A(u) of A with tangent vector ω and denote T_ω:= (D_A(u)−f) (u=0. The coefficients of the asymptotic expansion of trace (T_ω · e^-t(D_A−f)2) near t=0 define 1-forms a^(k)_f, K=0, 1, 2, … on (P). In this paper we calculate aa⁽⁰⁾_f, a⁽¹⁾_f, a⁽²⁾_f and study some of their properties. For instance using the 1-form a⁽²⁾_f for suitable functions f we obtain a foliation of codimension 5 of the space of G-instantons of S⁴.     

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

The current–voltage (I–V) characteristics of Au/polyaniline(PANI)/p-Si/Al structures were determined at various temperatures in the range of 90–300 K. The evaluation of the experimental I–V data reveals a decrease of the zero-bias barrier height (BH) and an increase of the ideality factor (n) with decreasing temperature. It was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH, increase of the ideality factor n due to barrier height imhomogeneities that prevail at the interface. A Φ_b0 versus 1/T plot has been drawn for evidence of the Gaussian distribution of the barrier height, and and σ₀ = 0.0943 V for the mean barrier height and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, a modified versus 1/T plot gives and A^* as 0.885 eV and A^* = 55.80 A/K² cm², respectively. Hence, it can be concluded that Au/PANI/p-Si/Al structure has a good rectifying contact and the temperature dependence of I–V characteristics of the rectifying contact on p-Si successfully have been explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.     

The influence of oxygen on the lattice sites of rare earths in silicon

We have used conversion electron emission channeling to investigate the lattice sites of ^167mEr following implantation of the radioactive isotope ¹⁶⁷Tm into CZ Si and FZ Si at varying doses (6×10¹² – 5×10¹³ cm⁻²). In all cases isothermal annealing at 900°C caused Er to leave its preferred near-tetrahedral sites in favour of random lattice sites, but this process occurred by orders of magnitude faster in CZ Si. Furthermore, in CZ Si the incorporation of Er on random lattice sites was fastest in samples implanted with low doses of Tm+Er. We compare our experimental results to a simple numerical model which accounts for the diffusion of Er and O and the formation of Er_nO_m complexes. On the basis of this model, our experimental data indicate that only a few (probably between 1 and 2) O atoms are required in order to remove an Er atom from its tetrahedral site.     

He particle emission in fast neutron induced reactions

Cross sections for some (n, ³He + dp + n2p) and (n, + 2n2p + n³He + pt + dd + dnp) reactions induced by fast neutrons produced via breakup of 53 MeV deuterons on a Be target (E_n = 4–50 MeV; I_max at 22.5 MeV; FWHM = 15.8 MeV) were measured for isotopes of the elements I, La, Nd, Tb, Ho, Yb, W and Au by the activation technique using high-resolution γ-ray spectroscopy, wherever necessary chemical separation, and in several cases enriched isotopes as targets. Furthermore, ³He/ emission cross-section ratios were measured for Co, Ag, In, Cs, La, Ta, Au and Bi using a quadrupole mass spectrometer. The cross sections decrease as a function of increasing (N−Z)/A of the target nucleus. For target elements with Z 44, the ³He/ emission cross-section ratio increases with increasing Z; for elements with Z > 44, however, the trend is reversed. Hauser-Feshbach calculations suggest that the ³He/ emission cross-section ratios are not explainable by the statistical model.     

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I_on), on/off current ratio (I_on/I_off), subthreshold swing (SS) transconductance (g_m), cut-off frequency (f_T) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on (9.98×10 ^{- 4} A/μm), high I_on/I_off (～ 10¹¹), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.     

Magnetic properties of the ternary carbides Tm2Fe17Cx

We have investigated the crystallographic and magnetic properties of the ternary carbides Tm₂Fe₁₇C_x by means of X-ray diffraction, ⁵⁷Fe Mössbauer spectroscopy, ¹⁶⁹Tm Mössbauer spectroscopy and magnetic measurements. It is shown that small amounts of carbon raise the Curie temperature in Tm₂Fe₁₇C_x from below room temperature to about 500 K, at the same time increasing the average Fe moment. Important conclusions regarding the rare-earth sublattice anisotropy were derived from the quadrupole splitting of the ¹⁶⁹Tm Mössbauer spectra and from the strong concentration dependence of the spin reorientation temperature in Tm₂Fe₁₇C_x.     

The decay of 1.2 min Ag and 5.3 h Ag

The decay schemes of 1.2 min and 5.3 h ¹¹³Ag have been studied using Ge(Li) and NaI(Tl) detectors and a 4096-channel multiparameter pulse-height analyser system. The decay of 5.3 h ¹¹³Ag was found to involve 15 γ-rays and to produce 10 excited states in ¹¹³Cd at energies of 264.7, 298.0, 315.6, 583.9, 604.6, 681.1, 883.6, 936.9, 989.0 and 1195.2 keV. The italicized energies refer to negative parity states, through which 1.3% of the decays go to yield the isomer at 264.7 keV. The 604.6 keV level is thought to be a case|9/2⁻ level similar for those found in several odd-mass Te and Xe isotopes. The 1.2 min ^113mAg decay was found to populate several of the same levels in Cd and two additional levels at 452 and 689 keV. The 1.2 min ¹¹³Ag is the upper isomer with high spin, probably .