Modeling and preparation of practical optical filters

Multilayer bandpass and bandstop filters have been produced using electron beam evaporation. Initially bandstop filter is modeled with non absorbing zinc sulphide (ZnS) and zinc selenide (ZnSe). When the absorption data was incorporated for the said materials significant absorption was observed at shorter wavelengths of the spectral band restricting the practical usage of the filter. ZnS and ZnSe were then replaced by dispersive silicon dioxide (SiO₂), tantalum penta oxide (Ta₂O₅) and titanium dioxide (TiO₂) along with their absorption and the filters are optimized to get desired bandpass and bandstop data. Bandpass and bandstop filters with desired performance were experimentally characterized with two combinations SiO₂/Ta₂O₅/glass and SiO₂/TiO₂/glass. The measured average transmission for both combination (bandpass) in the pass band was about 92% with T < 1% in the stop band. Slightly narrow bandwidth was observed for SiO₂/TiO₂/glass as compared to SiO₂/Ta₂O₅/glass which is attributed to layers densification. Similarly T_avg ⩾ 80% was achieved for two combinations of bandstop filters with T < 0.1% in the stop band. The structure and surface morphology of the prepared filters were characterized by X-ray diffraction and scanning electron microscopy. XRD analysis reveals amorphous structure. SEM analysis also reveals that the layers are compact and have good surface quality.     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

Hard coatings for optically bistable interference filters

We have fabricated optically bistable interference filters from layers of TiO₂ and SiO₂ vapour deposited on glass substrates. An experimental comparison with the more conventional ZnSe filters is presented. Our devices are superior in durability and switching contrast, equal in switching threshold, and slower in switching time.     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术,分别沉积Ti和Ti/Al膜,经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序,分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27 关键词： 2薄膜')" href="#">多孔TiO₂薄膜 阳极氧化 紫外光吸收     

Wear-out and breakdown of rf sputtered Ta2O5 films on silicon

The evolution of the gate voltage during the constant current stress of Ta₂O₅ films grown on silicon exhibits an additional decreasing region, compared to the case of SiO₂ films. That phenomenon has been previously attributed to the thickness lowering of the ultrathin SiO₂ interfacial layer naturally grown during the Ta₂O₅ deposition. Based on the previously proposed method of the evolution of the capacity in accumulation with the stress time, a simplified phenomenological model of capacitors in series was developed and employed as a tool for monitoring the degradation of the insulating film. In some cases breakdown events manifested by abrupt changes of the capacity in accumulation were observed, e.g., the case with the voltage on the silicon dioxide films. In other cases, saturation of the capacity in accumulation was detected, indicating continuous degradation of the SiO₂ layer till its final destruction. The above effect was not observed in SiO₂ films and can be peculiar for Ta₂O₅/SiO₂ or similar stacked layers. PACS 73.61.-r; 77.22.Jp; 77.55.+f     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Characterization and sensor properties of sol-gel SiO2:TiO2 film/ion-exchange glass optical waveguides

The paper presents the characterization and sensor properties of composite sol-gel SiO₂:TiO₂ film/ion-exchange glass optical waveguides. In the theoretical part of the paper the analysis involving the influence of the parameters of a uniform waveguide film on homogeneous sensitivity has been presented. It has been shown that the highest sensitivity can be obtained making use of the interference of TM₀-TM₁ modes. In the experimental part of the work the manufacturing technology of composite sol-gel SiO₂:TiO₂ film/ion-exchange glass optical waveguides has been described and the analysis results of the produced structures have been presented. The paper presents the influence of the thickness of the uniform waveguide film and the influence of the refractive index of the cover on effective refractive indexes. The produced waveguide structures are characterized by high homogeneous sensitivity.     

Design, formation and characterization of a novel multifunctional window with VO2 and TiO2 coatings

A novel multifunctional window was demonstrated using VO₂-based thermochromic films with a TiO₂ antireflection coating. A strong enhancement in luminous transmittance of VO₂ was calculated using either a single layer or a double layer of TiO₂ for antireflection, with the double layer giving the better performance. A TiO₂ (25 nm)/VO₂ (50 nm)/TiO₂ (25 nm) structure, of which the film thickness has been optimized to a maximum integrated luminous transmittance (T_lum) by calculation, was formed on SiO₂ glass by sputtering in turn a V target in Ar+O₂ for VO₂ and a TiO₂ target in Ar for TiO₂. Optical properties were measured with a spectrophotometer, and the integrated solar and luminous properties were calculated based on the measured spectra. A maximum increase in T_lum by 86% (from 30.9% to 57.6%) was obtained for VO₂ after double-layer TiO₂ antireflection coating. The deposited VO₂ film on SiO₂ exhibits good thermochromism with a sharp optical transition at 58.5 °C, which decreased slightly to 57.5 °C after TiO₂ coating. The proposed window is the most advanced among those similarly reported in being multifunctional with automatic solar/heat control, ultraviolet stopping and possibly a wide range of photocatalytic functions in addition to a high value of the luminous transmittance. PACS 42.79.Wc; 78.20.-e; 71.30.+h     

Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

C–V characteristics and leakage currents of metal-insulator-silicon structures containing insulating film composed of thermally grown Ta₂O₅ and ultrathin SiO_xN_y layer grown in N₂O plasma were studied. Leakage in the structures is explained by tunneling in SiO_xN_y layer and Poole–Frenkel internal field assisted emission in Ta₂O₅. Theoretical calculations were made by known theoretical expression, while using fitted values of the thickness of SiO_xN_y, defect related constants for Ta₂O₅, and compensation degree r=1 for Ta₂O₅. For positive gate biases, tunneling of electrons from the silicon conduction band through SiO₂ is considered, while for gates negatively biased, tunneling of holes from the silicon valence band. In the early stage of nitridation barriers for injection decreases rapidly, then much slower. The thickness of the SiO_xN_y layer increases slowly with the nitridation time, as a result of the created barrier against diffusion of silicon atoms created by nitrogen incorporated at the interface between the silicon and oxide SiO_xN_y layer. PACS 73.40.Qv; 73.50.-h; 73.61.-r An erratum to this article can be found at .     

Electrochemical evaluation of Ta2O5 thin film for all-solid-state switchable mirror glass

We investigated the electrochemical property of Ta₂O₅ thin film for all-solid-state switchable mirror glass. The film was deposited by reactive dc magnetron sputtering in a mixture gas of argon and oxygen. The current density of the film covered WO₃/ITO/glass was decreased with decreasing argon/oxygen ratio and working pressure measured by cyclic voltammetry. The film deposited at argon/oxygen ratio of 4.7 and working pressure of 1.0 Pa had better electrochemical property than that of other deposition condition. Its estimated proton conductivity was 2.1 × 10^? 9 S/cm by conventional ac impedance method. However, the device using the film showed poor optical switching property. The transmittance change of the device at a wavelength of 670 nm was only 16% by applying voltage. On the other hand, the device using the film deposited at working pressure of 0.7 Pa was able to switch its optical switching property from reflective of 0.1% to transparent states of 44% within 15 s. These results indicate that the suitable deposition condition of the Ta₂O₅ thin film existed to be used for all-solid-state switchable mirror glass.     

Surface Sol–gel Synthesis of Ultrathin Titanium and Tantalum Oxide Films

TiO₂, Ta₂O₅, and mixed TiO₂/Ta₂O₅ ultrathin films were grown layer-by-layer using a surface sol–gel deposition technique. The technique allows one to prepare smooth films of mixed composition with ångstrom-level control of thickness. The thickness increases per adsorption/hydrolysis cycle were 4.5, 2.1, and 2.5, respectively, for TiO₂, Ta₂O₅, and mixed TiO₂/Ta₂O₅ (1.6sol;1) films. By combining X-ray diffraction and ellipsometric analysis, it was determined that the as-deposited TiO₂ films are less dense than bulk TiO₂, and do not adhere persistently to Si/SiO₂ or Au/2-mercaptoethanol substrates. These green films were annealed at 400°C to produce denser and highly adherent films. Patterning the surface by microcontact printing of siloxane polymer thin films allows one to prepare patterned sol–gel oxide thin films.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Investigation into the effects of deposition parameters on TiO2 photocatalyst thin films by rf magnetron sputtering

Titanium dioxide (TiO₂) photocatalyst thin films were deposited on non-alkali glass substrates by radio frequency (rf) magnetron sputtering. The Taguchi method with orthogonal array, signal-to-noise ratio and analysis of variance were employed to study the performance characteristics. The experimental studies were conducted under different rf powers, sputtering pressures, O₂/(Ar+O₂) flow-rate ratios, and substrate temperatures. The deposited TiO₂ films were of the anatase phase with a (101) preferred orientation. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination. With the optimized TiO₂ photocatalyst thin film deposition conditions, the water contact angle after 9 min UV illumination was approximately 5, the absorbance of MB was reduced to 0.2 for 240 min UV irradiation, and the deposition rate was 34.18 Å/min.     

Texture control and its impact on the properties of SrBi2Ta2O9 thin films prepared by pulsed laser deposition

SrBi₂Ta₂O₉ (SBT) ferroelectric thin films with different preferred orientations were deposited by pulsed laser deposition (PLD). Several methods have been developed to control the preferred orientation of SBT thin films. For SBT films deposited directly on Pt/TiO₂/SiO₂/Si substrates and in situ crystallized at the deposition temperature, the substrate temperature has a significant impact on the orientation and the remnant polarization (Pr) of the films; a higher substrate temperature benefits the formation of (115) texture and larger grain size. The films deposited on Pt/TiO₂/SiO₂/Si substrates at 830 °C are (115)-oriented and exhibit 2Pr of 6 μC/cm². (115)- and (200)-predominant films can be formed by using a La_0.85Sr_0.15CoO₃ (LSCO) buffer layer or by annealing amorphous SBT films deposited on Pt/TiO₂/SiO₂/Si substrates at 450 °C using rapid thermal annealing (RTA). These films exhibit good electric properties; 2Pr of the films are up to 12 μC/cm² and 17 μC/cm², respectively. The much larger 2Pr of the films deposited on the LSCO buffer layer and of the films obtained by RTA than 2Pr of the films deposited on Pt/TiO₂/SiO₂/Si substrates at 830 °C is attributed to a stronger (200) texture. Received: 30 January 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films

The CaCu₃Ti₄O₁₂/SiO₂/CaCu₃Ti₄O₁₂ (CCTO/SiO₂/CCTO) multilayered films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition method. It has been demonstrated that the dielectric loss and the leakage current density were significantly reduced with the increase of the SiO₂ layer thickness, accompanied with a decrease of the dielectric constant. The CCTO film with a 20 nm SiO₂ layer showed a dielectric loss of 0.065 at 100 kHz and the leakage current density of 6×10⁻⁷ A/cm² at 100 kV/cm, which were much lower than those of the single layer CCTO films. The improvement of the electric properties is ascribed to two reasons: one is the improved crystallinity; the other is the reduced free carriers in the multilayered films.     

Characteristics of SrBi2Ta2O9 ferroelectric films in an in situ applied low electric field prepared by metalorganic decomposition

SrBi₂Ta₂O₉ (SBT) films were prepared on Pt/TiO₂/SiO₂/Si substrates at 750 °C in oxygen by metalorganic decomposition method. A low electric field was in situ applied during the film crystallization. It was first found that a low electric field and its direction have significant influence on the microstructures and ferroelectric properties of SBT films. Under a positive electric field (assuming that the bottom electrode is electrically grounded), the films show stronger c-axis-preferred orientation than without electric field and under a negative electric field. As a possible origin is proposed that the interface-induced nucleation growth between SBT and Pt coated substrate with application of low electric field plays a key role. Above all, an in situ applied low electric field during the film crystallization is a promising technique controlling film orientation for film preparation by wet chemical method.     

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series of Ta₂O₅ films with different SiO₂ additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO₂ additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO₂ overcoat and undercoat, yet was changed by adding an interlayer. SiO₂ undercoat. The interlayer improved the LIDT greatly, whereas the SiO₂ overcoat had little effect on the LIDT.     

Composite SiO2/TiO2 and amine polymer/TiO2 nanoparticles produced using plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition was used to conformally coat commercial TiO₂ nanoparticles to create nanocomposite materials. Hexamethyldisiloxane (HMDSO)/O₂ plasmas were used to deposit SiO₂ or SiO_xC_yH_z films, depending on the oxidant concentration; and hexylamine (HexAm) plasmas were used to deposit amorphous amine-containing polymeric films on the TiO₂ nanoparticles. The composite materials were analyzed using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). These analyses reveal film composition on the nanoparticles was virtually identical to that deposited on flat substrates and that the films deposit a conformal coating on the nanoparticles. The performance of the nanocomposite materials was evaluated using UV-vis spectroscopy to determine the dispersion characteristics of both SiO_x and HexAm coated TiO₂ materials. Notably, the coated materials stay suspended longer in distilled water than the uncoated materials for all deposited films.     

Preparation and characterization of amine-functionalized SiO2/TiO2 films for formaldehyde degradation

This paper investigated the gaseous formaldehyde degradation by the amine-functionalized SiO₂/TiO₂ photocatalytic films for improving indoor air quality. The films were synthesized via the co-condensation reaction of methyltrimethoxysilane (MTMOS) and 3-aminopropyltrimethoxysilane (APTMS). The physicochemical properties of prepared photocatalysts were characterized with N₂ adsorption/desorption isotherms measurement, X-ray diffraction (XRD) and Fourier Transform Infrared spectroscopy (FT/IR). The effect of amine-functional groups and the ratio of MTMOS/APTMS precursors on the formaldehyde adsorption and photocatalytic degradation were investigated. The results showed that the formaldehyde adsorption and photocatalytic degradation of the APTMS-functionalized SiO₂/TiO₂ film was higher than that of SiO₂/TiO₂ film due to the surface adsorption on amine sites and the relatively high of the specific surface area of the APTMS-functionalized SiO₂/TiO₂ film (15 times higher than SiO₂/TiO₂). The enhancement of the formaldehyde degradation of the film can be attributed to the synergetic effect of adsorption and subsequent photocatalytic decomposition. The repeatability of photocatalytic film was also tested and the degradation efficiency was 91.0% of initial efficiency after seven cycles.     

Effects of coating parameters on the morphology of SiO2-coated TiO2 and the pigmentary properties

SiO₂-coated TiO₂ powders were prepared by the chemical deposition method starting from rutile TiO₂ and Na₂SiO₃. The SiO₂-coated TiO₂ powders were characterized by X-ray photoelectron spectroscopy, Zeta-potential analysis, Fourier transform infrared spectroscopy, and transmission electron microscopy. The evolution of island-like and uniform coating layers was found to depend upon the ratio of Na₂SiO₃ to TiO₂, reaction temperature, and pH. The whiteness and brightness of the SiO₂-coated TiO₂ powders increased in response to an increase in the SiO₂ loading, but there was a maximum value among the light scattering indexes. The SiO₂-coated TiO₂ powders possessed more negative Zeta potentials than the naked TiO₂. The dispersibility of the SiO₂-coated TiO₂ powders with the continuous and uniform SiO₂ coating layers was higher than that of the naked TiO₂ and the SiO₂-coated TiO₂ powders with the island-like SiO₂ coating layers.