Adsorbate motions induced by vibrational mode coupling

Adsorbate motions are discussed with a primary attention focused on the coupling between a vibrational mode excited by ultrafast laser heated hot-electrons or by inelastic tunneling electrons with scanning tunneling microscope and the reaction coordinate (RC) mode. Recent experimental results have demonstrated an efficient reaction pathways involving an indirect excitation of a frustrated translational mode, rather than its direct excitation for adsorbate hopping on surfaces. Elementary processes are briefly described for hopping of CO molecules on a laser heated stepped Pt surface, where excitation of the frustrated rotation mode has been found to plays an indispensable. Calculation of the inelastic tunneling current (ITC) for excitation of the C-O stretch mode of a CO molecule is combined with a theory of anharmonic mode coupling to activate the frustrated translation mode above the barrier. The hopping rate as a function of the bias voltage agrees with the experimental result. An unified theory of single-, and two-electron processes for ITC-induced motions induced by an indirect excitation of the RC-mode via mode coupling is also applied to reproduce a crossover from hopping to desorption of a single NH₃ molecule on Cu(1 0 0) with an increase in the tunneling current.     

分子动力学模拟Gd原子在Cu(110)表面的扩散过程

为了分析Gd吸附原子在Cu(110)表面的扩散机理，用分子动力学对该扩散过程进行模拟.模拟 结果表明在［1 1 0］方向Gd原子通过跳跃机理扩散，而且多步跳跃频率很高.而在［0 0 1］方向则通过交换机理扩散.吸附原子在［1 1 0］方向的扩散能力要比［0 0 1］ 方向强.通过对扩散频率的拟合，发现两种扩散机理都符合Arrhenius公式，从而确定了跳跃 机理的扩散势垒为0.097eV，交换机理的扩散势垒为0.33eV.另外还用能量弛豫的方法确定了 跳跃机理的扩散势垒. 关键词： 分子动力学 表面扩散 跳跃机理 交换机理 扩散势垒     

异质扩散过程中ES势垒的计算

利用分子动力学中的静态结构计算方法对Pd，Ag及Cu原子在面心立方铜的台阶表面扩散过程中的Ehrlich-Schwoebel(ES)势垒进行了模拟计算，研究了各种台阶表面情况下增原子扩散过程中的ES势垒；讨论了与衬底互溶的金属和与衬底不互溶的金属增原子扩散的ES势垒的异同，并将模拟结果与同质情况的研究结果进行了对比. 结果表明： 1)在同质和异质扩散过程中ES势垒随着台阶高度的变化关系是相似的，即随着台阶高度的增加，ES势垒逐渐增加；当台阶高度达到某一高度时ES势垒将趋于定值. 2)在跳跃机理下，与Cu互溶的金属(Pd)在Cu表面台阶上扩散的ES势垒最大，其次是Cu，最小的是与Cu不互溶的金属 (Ag)；而在交换机理下，与Cu不互溶的金属(Ag)在Cu表面台阶上扩散的ES势垒最大，其次是Cu，最小的是与Cu互溶的金属(Pd). 3)对大多数台阶的情况，交换机理支配着原子在台阶边缘的扩散行为；且表面台阶高度对交换扩散过程影响较大.     

Mechanism for room-temperature single-atom lateral manipulations on semiconductors using dynamic force microscopy

Vacancy-mediated lateral manipulations of intrinsic adatoms of the Si(111)-(7x7) surface at room temperature are reported. The topographic signal during the manipulation combined with force spectroscopy measurements reveals that these manipulations can be ascribed to the so-called pulling mode, and that the Si adatoms were manipulated in the attractive tip-surface interaction regime at the relatively low short-range force value associated to the manipulation set point. First-principles calculations reveal that the presence of the tip induces structural relaxations that weaken the adatom surface bonds and manifests in a considerable local reduction of the natural diffusion barriers to adjacent adsorption positions. Close to the short-range forces measured in the experiments, these barriers are lowered near the limit that enables a thermally activated hopping at room temperature.     

Calculated pre-exponential factors and energetics for adatom hopping on terraces and steps of Cu(1 0 0) and Cu(1 1 0)

We have calculated the vibrational dynamics and thermodynamics for Cu adatom hopping on terraces and near step edges on Cu(1 0 0) and Cu(1 1 0), using the embedded atom method for the interatomic potential. The local vibrational densities of states were calculated using real space Green’s function formalism and the thermodynamical functions were evaluated in the harmonic approximation. The calculated diffusion energy barriers for six specific local environments on Cu(1 0 0) agree well with experimental and previous theoretical results. Contribution of vibrational entropy to the change in the free energy of the system as the adatom moves from the equilibrium configuration (hollow site) to the saddle point, is found to be as much as 55 meV (144 meV) at 300 K (600 K). The prefactors for all 13 cases are found to be of the order of 10⁻³ cm²/s, almost independent of temperature, and the respective activation energy barriers.     

Diffusion of single adatom Cu on Cu (0 0 1) and (1 1 0) surfaces

With static relaxation, the surface diffusion activation energies of a single Cu adatom migrated by both atomic exchange and hopping mechanisms and the forces acted on the diffusing adatom from other atoms of Cu (0 0 1) or (1 1 0) surface are calculated by using the MAEAM. When adatom migrated on Cu (0 0 1) or (1 1 0) surface, the increment curves of the system energy by hopping mechanism are symmetrical and the saddle points are in the midpoints of the migration path, but the ones by the exchange mechanism are dissymmetrical and the saddle points are always close to the initial hole positions of the adatom and away from the initial equilibrium positions of the exchanged atom. From minimization of both the diffusion activation energy and the force acted on the diffusing adatom from other atoms, we found that, on Cu (0 0 1) surface the favorable diffusion mechanism is hopping mechanism, however, on Cu (1 1 0) surface, hopping via long bridge is easier than the exchange mechanism but the hopping via short bridge is more difficult than the exchange mechanism.     

异质原子在Cu（001）表面扩散的分子动力学模拟

采用分子动力学方法模拟单个增原子Ag,Pd和Cu在Cu（001）表面上的扩散过程.通过对自扩散和异质扩散过程中扩散机制的观察,统计三种不同的增原子在不同温度下的扩散频率,拟合给出扩散势垒和扩散频率的指前因子,并与扩散势垒的静力学计算结果进行比较.结果表明：在800 K以下时,三种增原子均以简单跳跃机制为主扩散,与衬底不互溶的Ag增原子的跳跃频率最大,与衬底互溶的Pd增原子的跳跃频率最小.同质增原子与异质增原子的扩散频率和温度的关系均较好地符合Arrhenius公式,由Arrhenius公式拟合给出的三种不同增原子的扩散势垒与表面结构和增原子表面结合能有关.Pd和Cu增原子从跳跃机制为主向交换机制为主的转换温度分别在825和937 K左右. 关键词： 表面扩散 分子动力学模拟     

表面Cu原子间相互作用对Cu(001)表面跳跃扩散行为的影响

采用嵌入原子方法的原子间相互作用势，利用准静态分子动力学模拟研究了Cu原子在Cu(001)表面吸附所导致的基体晶格畸变以及对其附近的另一个吸附原子自扩散行为的影响.研究结果表明，吸附原子的存在可以导致多达10层的Cu基体晶格产生畸变.两个吸附原子所产生的晶格畸变应力场之间的相互作用，可以导致吸附原子运动活性的增加.通过比较同一路径上往返跳跃扩散势垒的差异发现，在原子间相互作用势的有效距离之外，两个吸附原子的扩散行为可以认为是存在晶格畸变应力场相互作用的两个独立吸附原子的扩散；在原子间相互作用势的有效距离之 关键词： 表面吸附原子 晶格畸变 表面二聚体 扩散     

Cu dimer diffusion on strained Cu(0 0 1)

Cu dimer diffusion energy barrier on strained Cu(0 0 1) surfaces has been studied with nudged elastic band method (NEB) and embedded atom method (EAM). Dimer exchange and hopping mechanisms are chosen as the initial diffusion paths in the NEB method. It is shown here that the dimer exchange is dominant on tensile surfaces and the dimer hopping is dominant on compressive surfaces. For most strain conditions Cu dimer diffusion energy barrier is lower than Cu monomer diffusion barrier. The concerted movement of the remaining adatom toward the hopping adatom lowers the dimer hopping barrier. The adsorption induced relaxation makes the dimer exchange barriers lower than the monomer exchange barriers on tensile surfaces. Transition state theory is used to calculate the diffusion frequencies as a function of temperature. No surface crowdion is observed on the shear strained surfaces for the dimer diffusion.     

TWO-DIMENSIONAL LOCALIZED VIBRATIONAL MODES AROUND A POLARON WITH THE NEXT-NEAREST-NEIGHBOR HOPPING INTERACTIONS

We have calculated the vibrational modes around a polaron to test the effects of the next-nearest-neighbor hopping interactions on the localized medes within a framework of the two-dimensional mode. The results show that: (1) For a negative polaron, eleven localized modes have been found, compared with ten modes obtained on a previous work without non-nearest neighbor hopping. (2) For a positive polaron, two additional localized modes occur. (3) The localization of localized modes are strengthened and their frequencies move after turning on the next-nearest-neighbor hopping interactions.     

用分子动力学方法研究Ag(001)表面吸附原子的自扩散现象

用分子动力学方法研究了单个吸附原子在Ａｇ（００１）表面的自扩散现象，其中相互作用势采用了更适合于表面特性的表面嵌入势（ＳＥＡＭ势）．观察到了丰富的扩散机制，包括简单交换机制、复杂交换机制、跳跃机制及一种新的渡越机制．提出了复杂交换机制的另一种竞争交换模型．对所有扩散机制的统计结果表明，吸附原子与表面原子间的交换扩散占主导．另外，由吸附原子扩散的Ａｒｒｈｅｎｉｕｓ行为及能量弛豫方法计算得到了简单交换机制的激活能为０.３９ｅＶ，它小于跳跃机制的激活能０.４７ｅＶ． 关键词：     

Surface diffusion of Cr adatoms on Au(111) by quantum tunneling

The low-temperature surface diffusion of isolated Cr adatoms on Au(111) has been determined using nonperturbing x rays. Changes in the x-ray magnetic circular dichroism spectral line shape together with Monte Carlo calculations demonstrate that adatom nucleation proceeds via quantum tunneling diffusion rather than over-barrier hopping for temperatures <40K. The jump rates are shown to be as much as 35 orders of magnitude higher than that expected for thermal over-barrier hopping at 10 K.     

Storage of Entangled States with Multiple Trapped Ions in Thermal Motion

This paper presents an alternative scheme to realize the storage of entangled states for multiple trapped ions including W state, Bell states, and GHZ states even with ions which exchange vibrational energy with a heating surrounding. Our scheme requires that the ions be simultaneously excited by two laser beams with different frequencies.In this scheme the vibrational degrees of freedom are only regarded as intermediate states and the ions exchange energy via the mediation of the vibration of the vibrational mode in coupling processes. The scheme is insensitive to both the initial vibrational state and heating if the system remains in the Lamb-Dicke regime. Since the effective Rabi frequency has a small dependence on the vibrational quantum number the heating will have no direct effect on the internal state evolution.     

High-Speed Geometric Quantum Computation with Trapped Thermal Ions via Vibrational Mode Decay

We utilize the general displacement operator proposed recently [C.Y. Chen, et al., Phys. Rev. A 74 （2006） 032328] to investigate a high-speed geometric quantum computation via vibrational mode decay of two trapped thermal ions. We find that, under some special conditions, the geometric phase gating is somewhat faster in the heating case than in the ideal case. We also investigate analytically the influence from the vibrational mode heating on the fidelity and the success probability of the implementation.     

Tunneling electron induced bromine hopping on Si(100)-(2 x 1)

Tunneling electrons from the tip of a scanning tunneling microscope can be used to induce adatom hopping on Br-terminated Si(100)-(2x1) at low current and without voltage pulses. Hopping does not occur when electrons tunnel from a sample to a tip. The threshold energy is +0.8 V, and tunneling spectroscopy shows antibonding Si-Br states 0.8 eV above the Fermi level. Electron capture in these states is a necessary condition for hopping, but repulsive adsorbate interactions that lower the activation barrier are also required. Such interactions are strong near saturation for Br but are insufficient when the coverage is low or when Br is replaced by Cl.     

Structural Relaxation and Vibrational Properties of a Surface with Point Defects

JETP Letters - The local structural changes and vibrational characteristics of the (001) surface of an fcc metal in the presence of vacancy/adatom point defects have been studied theoretically. The...     

Derivation of a temperature-dependent accommodation coefficient for use in modeling laser-induced incandescence of soot

This paper presents a derivation of an expression to estimate the accommodation coefficient for gas collisions with a graphite surface, which is meant for use in models of laser-induced incandescence (LII) of soot. Energy transfer between gas molecules and solid surfaces has been studied extensively, and a considerable amount is known about the physical mechanisms important in thermal accommodation. Values of accommodation coefficients currently used in LII models are temperature independent and are based on a small subset of information available in the literature. The expression derived in this study is based on published data from state-to-state gas-surface scattering experiments. The present study compiles data on the temperature dependence of translational, rotational, and vibrational energy transfer for diatomic molecules (predominantly NO) colliding with graphite surfaces. The data were used to infer partial accommodation coefficients for translational, rotational, and vibrational degrees of freedom, which were consolidated to derive an overall accommodation coefficient that accounts for accommodation of all degrees of freedom of the scattered gas distributions. This accommodation coefficient can be used to calculate conductive cooling rates following laser heating of soot particles.     

Non-Equilibrium Heating of Molecular Gases

The results of non-equilibrium heating of air, carbon dioxide, nitrogen in a plasmatron with porous arc channel at intense gas blow are presented. The investigations are performed in the current range 100–500 A, at the gas pressure being higher than atmospheric. The deviation from the equilibrium conditions in the flow behind the plasmatron for air and carbon dioxide is evaluated by reaction products of nitrogen oxides synthesis and carbon dioxide conversion outputs. It is shown that these processes have non-equilibrium mode and it can explained by an increased products output. For nitrogen the excess of the vibrational temperature T_v over the translational T is defined by the laser probe method (at T = 1500 K T_v = 3000 K).     

Cu(111)三维表面岛对表面原子扩散影响的分子动力学研究

采用嵌入原子方法的原子间相互作用势，利用分子动力学方法计算了同质外延生长中不同层数的三维Cu(111)表面岛上表面原子扩散激活能，分析了三维表面岛的层数对表面原子交换扩散和跳跃扩散势垒的影响. 研究结果表明，二维Enrilich-Schwoebel(ES)势垒小于三维ES势垒，且三维ES势垒不随表面岛层数的增加而显著变化. 对于侧向表面为(100)的表面岛，表面原子沿〈011〉方向上的扩散行为，随表面岛层数增加而逐渐变化；在表面岛层数达到3层时，扩散路径上的势垒变化趋于稳定，表面原子扩散以下坡扩散为主. 对于侧面取向为(111)的表面岛，当表面岛层数大于3层后，开始呈现上坡扩散的可能. 关键词： 表面原子 扩散 分子动力学模拟