缺氧La0.6Ca0.4MnO3-δ薄膜的光响应特性

采用波长均为532 nm的连续激光和脉冲激光研究了缺氧La0.6Ca0.4MnO3-δ(LCMO)薄膜的光响应特性。分析了在金属态和绝缘态时,缺氧对LCMO薄膜光响应的不同影响。在脉冲宽度7 ns、峰值功率750 mW的脉冲激光作用下,缺氧LCMO薄膜在室温下呈现出明显的光响应信号,其光电导增大36.4%,上升时间约30 ns。由于光子能量大于LCMO的禁带宽度,光子注入在薄膜中产生了电子-空穴对,而电子很容易被氧空位俘获,从而在薄膜中产生大量额外的空穴载流子,大量的空穴载流子可能诱发局域绝缘-金属相变,从而在薄膜中产生明显的光电导效应。实验显示出缺氧钙钛矿薄膜在光电器件上的巨大应用潜力。     

啁啾激光场中氢分子离子电离过程的理论研究

本文在非玻恩-奥本海默(Non Born-Oppenheimer)近似条件下,通过数值求解一维含时薛定谔方程,探究了氢分子离子体系在超短啁啾激光条件下的电离过程.数值结果表明:有效选取啁啾参数可显著增强氢分子离子的电离过程,并且激光强度越大,电离过程对啁啾参数越敏感.结合不同强度下平均核间距及电子波包密度随时间的变化,分别从核与电子运动的角度,有效的解释了啁啾脉冲对氢分子离子电离过程的影响.     

室温下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性

在室温下利用波长532 nm,脉冲宽度7 ns的纳秒脉冲激光研究了不同电压和激光能量密度作用下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性.在激光能量密度为275.16 mJ/cm2时,其最大电阻变化率达到92.3%,响应时间约36 ns.室温下电压变化对薄膜的光响应特性影响不大,而诱导光能量密度的影响则很明显,能量密度越大,电阻变化越大,响应时间越短,并且电阻变化和响应时间均与激光能量密度呈非线性关系.这种光响应来源于薄膜中的光致非稳态绝缘体-金属相变,有望在新型光电器件上获得应用.     

激光脉冲的横向波形对弓形波电子俘获的影响

用粒子模拟研究了在激光尾波场电子弓形波注入过程中激光脉冲的横向波形对尾波场俘获电子数目的影响, 发现与高斯激光相比, 超高斯形激光更有利于拉动空泡闭合前侧边的电子团向空泡尾部汇聚形成高能量局域化的弓形波, 从而导致更多的电子注入到空泡的加速相, 使得被俘获的电子数目提高近5倍, 且电子束品质得到改善.该研究对于进一步理解尾波场加速中电子注入等有参考价值. 关键词： 尾波场 电子俘获 横向波形 粒子模拟     

影响单电子非线性汤姆孙散射因素的研究

应用电子汤姆孙散射的经典理论，通过理论分析和计算机模拟，研究了超短超强激光脉冲作用下电子产生的辐射脉冲的性质.计算表明，在这种情况下，电子的辐射通常以阿秒脉冲列的形式出现.讨论了不同激光场参数（包括激光强度、脉宽、初相位和偏振态）、不同电子初始状态（初始速度和位置）对辐射脉冲的时间和空间特性的影响.通常在相对论光强条件下，激光强度越大，电子辐射越强，脉宽越窄，中心频率越大，并且方向性越好；电子在线偏振激光中产生的辐射效率，比在同样强度下圆偏振激光中产生的效率更高；无论入射光是线偏振光，还是圆偏振光,辐射场呈现较复杂的偏振态, 并且它与辐射方向有关.当电子具有一定的初始能量时，通常辐射场的振幅随电子初始能量的增大而增大.不管电子的初始能量以及运动方向如何，做相对论运动的电子产生的辐射趋向于出现在靠近电子运动方向的角度区域.     

Compton散射下激光等离子体界面附近电子的运动

研究了多光子非线性Compton散射下等离子体中两个不同密度区的界面附近耦合激光场中电子的运动, 导出了电子的横向动量与纵向动量相互关系的一般方程.研究发现：介质的非均匀性导致电子运动特性的重要变化,在一定的条件下,这种非均匀性有利于注入电子获得加速;散射可有效地降低弹推阈值.当耦合脉冲强度低于弹推阈值时,电子最终被脉冲超过,但无论对初始时刻静止的电子还是运动的电子,能量增益均不为0,且随注入能量的提高而迅速地增加.当耦合脉冲强度高于弹推阈值时,电子最终超过脉冲而获得很高的能量增益,其值远远高于均匀等离子体的情况.在入射相同能量的情况下,耦合光会使电子获得更高的能量增益.     

基于Fokker-Planck方程的电介质材料短脉冲激光破坏机制分析

基于Pokker-Planck方程,建立一个描述短脉冲激光作用下电介质材料中导带电子能量分布随时间变化的模型,用数值方法计算电子能量分布与电子数密度随时间的演化过程,根据临界等离子体密度准则得到了不同激光脉冲宽度和波长下电介质材料(以SiO<,2>为例)的破坏阈值.结果发现,尽管激光波长通过3种途径对材料破坏阈值的确定...     

同材质颗粒不同填充密度的随机介质中光场的空间分布

用时域有限差分法研究了同一材质的颗粒在不同填充密度下的随机介质中光局域化问题. 依据随机介质激光的实验参数,模拟了颗粒填充密度不同的随机介质中光场的空间分布. 结果表明：当散射颗粒的散射平均自由程与波长相当时,随机介质中的光场分布呈现局域化的特征,而且随着颗粒填充密度增大,光场的局域化程度增强. 因此,在同样的抽运激励下,颗粒填充密度越大的随机增益介质越容易产生激光辐射. 数值模拟结果与实验定性符合. 关键词： 随机激光 时域有限差分法 颗粒填充密度 局域化     

1 064 nm与532 nm激光对电子束蒸发制备的HfO2/SiO2高反膜损伤比较

 研究了电子束蒸发制备的HfO₂/SiO₂高反膜在1 064 nm与532 nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑,当能量密度较大时出现分层剥落;二倍频激光损伤主要是由电子缺陷引起的平底坑,辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑,但电子缺陷的损伤阈值更低;随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为,辐照激光波长的变化,引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。     

室温下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性

在室温下利用波长532nm，脉冲宽度7ns的纳秒脉冲激光研究了不同电压和激光能量密度作用下Pr_0.7Ca_0.3MnO₃薄膜的瞬态光响应特性.在激光能量密度为275.16mJ/cm²时，其最大电阻变化率达到92.3%，响应时间约36ns.室温下电压变化对薄膜的光响应特性影响不大，而诱导光能量密度的影响则很明显，能量密度越大，电阻变化越大，响应时间越短，并且电阻变化和响应时间均与激光能量密度呈非线性关系.这种光响应来源于薄膜中的光致非稳态绝缘体-金属相变，有望在新型光电器件上获得应用.     

不同核轴取向的O2的高次谐波

分子的高次谐波是强场超快物理的重要研究课题. 采用建立在形式散射理论基础上的频域方法计算了O₂在线偏振激光场下的高次谐波, 探讨了核轴被准直在与激光传输方向垂直的平面内时, 高次谐波随核轴与光电场偏振方向所成夹角θ₀的依赖关系. 结果表明: 各次谐波都是在θ₀约为45°时强度最大, 并有较宽的峰值宽度; 当偏离此角度, 高次谐波的强度变小; 到达平行或垂直取向时, 降到最低. 分析表明, 这是由于高次谐波的强度取决于分子基态的电子在动量空间中的电场方向的布居. 针对核轴被准直在激光传输方向与电场偏振方向所确定的平面内的情况, 计算了高次谐波随θ₀的依赖关系, 结果与前一种情况基本相同. 分析发现, 当核轴被准直固定后, 分子绕核轴旋转的角度ψ没有固定, 所以最后的高次谐波强度需要对不同的ψ 时的高次谐波的贡献求和平均. 平均后相当于波函数相对于核轴旋转对称, 从而导致O₂的高次谐波仅与θ₀有关, 而与核轴被准直在哪个面上无关.     

Control of electron localization in the dissociation of H2+ and its isotopes with a THz pulse

The molecular dissociation with a two-laser-pulse scheme is theoretically investigated for the hydrogen molecular ion(H+2)and its isotopes(HD+and HT+).The terahertz pulse is used to steer the electron motion after it has been excited by an ultrashort ultraviolet laser pulse and an unprecedented electron localization ratio can be achieved.With the coupled equations,the mass effect of the nuclei on the effective time of the electron localization control is discussed.     

Wavelength dependence of electron localization of H_2~+ and its isotopomers in the UV-pump-probe scheme

The wavelength dependence of electron localization of H_2~+ and its isotopomers in the ultraviolet pump-probe scheme is investigated by numerically solving the time-dependent Schrdinger equation. By combining with a semiclassical method,an effective analytical formula expressed in the adiabatic representation is established to describe the localization probability with several zero crossings. A stable zone with respect to the laser intensity and carrier envelope phase is found at a relatively long probe wavelength. Finally, the critical probe wavelengths to reach at the stable zone are derived by using the three-dimensional model. Slower nuclear motion of heavier isotopomers leads to a longer critical wavelength.     

Dependence of the excitation wavelength on the Raman-active phonons of YBa2Cu3O7 Search for Landau damping in single-domain crystals

In single-domain crystals of YBa₂Cu₃O₇, we examine the dependence of phonon linewidth on wavevector by varying the wavelength of the exciting laser. In three crystals, we find the linewidths of the Raman-active phonons at 120 and 150 cm⁻¹ to be nearly invariant for excitation wavelengths between 647 and 413 nm. That is, we find no broadening of the phonon linewidths with increasing phonon wavevector (decreasing excitation wavelength), and thus no evidence of Landau damping in our crystals. In addition, the correlation between the intensity of the chain-related Raman feature at ≈232 cm⁻¹ and the temperature dependence of the B_1g-like phonon at 340 cm⁻¹ has been investigated. In all three crystals, we find a net sharpening of the 340 cm⁻¹ phonon below T_c and essentially no intensity for the ≈232 cm⁻¹ mode under resonance conditions.     

Electron localization of linear symmetric molecular ion H_3~(2+)

Electron localization in the dissociation of the symmetric linear molecular ion H_3~(2+) is investigated. The numerical simulation shows that the electron localization distribution is dependent on the central frequency and peak electric field amplitude of the external ultrashort ultraviolet laser pulse. When the electrons of the ground state are excited onto the 2pσ~2Σ_u~+ by a one-photon process, most electrons of the dissociation states are localized at the protons on both sides symmetrically. Almost no electron is stabilized at the middle proton due to the odd symmetry of the wave function. With the increase of the frequency of the external ultraviolet laser pulse, the electron localization ratio of the middle proton increases, for more electrons of the ground state are excited onto the higher 3pσ~2Σ_u~+ ustate. 50.9% electrons of all the dissociation events can be captured by the middle Coulomb potential well through optimizing the central frequency and peak electric field amplitude of the ultraviolet laser pulse. Besides, a direct current(DC) electric field can be utilized to control the electron motions of the dissociation states after the excitation of an ultraviolet laser pulse, and 68.8% electrons of the dissociation states can be controlled into the middle proton.     

Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors

The effects of annealing on structure and laser-induced damage threshold (LIDT) of Ta₂O₅/SiO₂ dielectric mirrors were investigated. Ta₂O₅/SiO₂ multilayer was prepared by ion beam sputtering (IBS), then annealed in air under the temperature from 100 to 400 °C. Microstructure of the samples was characterized by X-ray diffraction (XRD). Absorption of the multilayer was measured by surface thermal lensing (STL) technique. The laser-induced damage threshold was assessed using 1064 nm free pulsed laser at a pulse length of 220 μs.

It was found that the center wavelength shifted to long wavelength gradually as the annealing temperature increased, and kept its non-crystalline structure even after annealing. The absorbance of the reflectors decreased after annealing. A remarkable increase of the laser-induced damage threshold was found when the annealing temperature was above 250 °C.     

Electron localization of H_2~+ in a dc electric field

A dc electric field is utilized to steer the electron motion after the molecular ion H_2~+ is excited by an ultrashort ultraviolet laser pulse. The numerical simulation shows that the electron localization distribution and the dissociation control ratio are dependent on the polarization direction and amplitude of the dc electric field. Most electrons of the dissociation state move opposite to the dc electric field and stabilize at the dressed-up potential well, for the dressed-down well is occupied by the electrons of the 1 sσ_g state.     

掺钕微球的受激辐射激光和自受激拉曼散射

采用溶胶-凝胶法在SiO_2微球表面覆盖上一薄层Nd~(3+)掺杂SiO_2,并经电极放电熔融后形成表面光滑的高Q值微球.采用锥光纤将808 nm的抽运激光耦合入钕离子掺杂的高Q值微球形成回廊模,激发产生了1080—1097 nm波段受激辐射激光.由于所产生的激光有足够高的功率密度,在高Q SiO_2微球中激发产生了波长为1120—1143 nm一级自受激拉曼散射激光.推导了锥光纤掺钕微球组合的自受激拉曼散射的输出功率和阈值公式.描述了输出激光的特性:阈值、输出功率、线宽、边模抑制比.     

Bi0.8Ba0.2FeO3/La0.7Sr0.3MnO3异质结制备及其交换偏置效应研究

采用脉冲激光沉积方法, 通过调节激光能量、激光频率、衬底温度、氧压、靶基距等工艺参数, 在(100)取向的铝酸镧单晶衬底上制备出Bi_0.8Ba_0.2FeO₃/La_0.7Sr_0.3MnO₃多铁性异质结. X射线衍射图谱表明薄膜呈钙钛矿结构, 高分辨透射电镜图谱和能量色散X射线图谱表明两相界面清晰且具有良好的匹配度, 异质结呈(00l)取向性生长. 加场冷却条件下不同温度的磁滞回线(M-H)测量结果表明样品具有明显的交换偏置效应, 交换偏置场(H_EB)随温度的线性变化可能与异质结界面处电子轨道的重构和界面处自旋、轨道自由度之间的复杂的相互作用有关.     

EPR and ENDOR study of an oxygen-vacancy-associated Ti center in RbTiOPO4 crystals

The dominant Ti³⁺ trapped electron center in flux-grown RbTiOPO₄ (RTP) crystals has been characterized using electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR). This center is produced during an X-ray irradiation at room temperature when a Ti⁴⁺ ion traps an electron and becomes a Ti³⁺ ion, and is best studied in the 30–40 K range. The EPR spectrum contains a three-line hyperfine pattern from two nearly equivalent neighboring ³¹P nuclei, along with hyperfine lines from the ⁴⁷Ti and ⁴⁹Ti nuclei. The g matrix, determined from the angular dependence of the EPR spectrum, has principal values of 1.819, 1.889, and 1.947. Hyperfine matrices for four ³¹P nuclei are obtained from the angular dependence of the ENDOR spectrum. The proposed model for this defect is a Ti³⁺ ion adjacent to an oxygen vacancy at an OT position. Analogies are made to a similar Ti³⁺ center in KTiOPO₄ (KTP) crystals.