Configuration of pentacene (C22H14) films on Si(1 0 0)-2 × 1 studied by NEXAFS

Pentacene films on Si(1 0 0)-(2 × 1) surface at 300 K were investigated using near edge X-ray absorption fine structure (NEXAFS) at the carbon K-edge. NEXAFS spectra show that pentacene molecules are chemisorbed on the Si(1 0 0)-(2 × 1) surface for monolayer with flat-laying and predominantly physisorbed on the Si(1 0 0)-(2 × 1) surface for multilayer films with an upright molecular orientation. Absorption angle of pentacene molecules were measured through π^∗ transition. The angles between the double bond and the silicon surface were 35-55°, 65° and 76° at monolayer, 24 and 48 nm pentacene deposited on the Si(1 0 0) surface, respectively. We observed that the intermediate flat-laying phase is favored for monolayer coverage, while the films of molecules standing perpendicular to the Si(1 0 0) surface are favored for multilayer coverage.     

Device relevant organic films and interfaces: A surface science approach

Here the morphology, molecular orientation and electronic structure of in situ prepared para-sexiphenyl (6P) and α-sexithiophene (6T) films studied with atomic force microscopy, near edge X-ray absorption fine structure spectroscopy and valence band photoemission are presented. Attention is given to the differences between different organic crystallite orientations and the pitfalls in the interpretation of area averaging surface sensitive techniques that can arise from inhomogeneities in the films, which commonly occur even on single crystal inorganic substrates. The growth of organic-organic heterostructures is then considered for sexithiophene films grown on homogeneous upright (6P(0 0 1)) and lying (6P(2 0 3)) crystalline films. In both cases, the orientation of the substrate molecules is imposed on the molecules of the second species and thick films of upright-on-upright or lying-on-lying could be produced. The organic substrates are thus shown to be excellent templates for further organic film growth that do not require the stringent UHV conditions of inorganic templates.     

Controlling molecular orientation of OMBE grown 6P thin films on mica(0 0 1)

The growth of para-sexiphenyl thin films by organic molecular beam epitaxy (OMBE) on mica(0 0 1) was investigated. The morphology of the films was qualitatively and quantitatively analyzed by atomic-force microscopy. Synchrotron radiation was used in order to extract information about orientation of the individual molecules with respect to the substrate. Controlling the growth environment inside the growth chamber allowed to reproduce one-dimensional film morphologies with partially oriented crystallite chains usually obtained by hot wall epitaxy (HWE). Following a dedicated pregrowth procedure results in terraces of upright standing molecules so far not obtained. Phase imaging was used to clearly distinguish film and substrate.     

Effects of substrates on the structure and dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si and LaNiO₃(LNO)/Pt(1 1 1)/Ti/SiO₂/Si substrates by a sol-gel processing technique, respectively. The BTS thin films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si and annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates exhibited strong (1 1 1) and perfect (1 0 0) orientations, respectively. The BTS thin films grown on un-annealed Pt(1 1 1)/Ti/SiO₂/Si substrates showed random orientation with intense (1 1 0) peak, while the films deposited on un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate exhibited random orientation with intense (1 0 0) peak, respectively. The dielectric constant of the BTS films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si, annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si, un-annealed Pt(1 1 1)/Ti/SiO₂/Si and un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates was 512, 565, 386 and 437, respectively, measured at a frequency of 100 kHz. A high tunability of 49.7% was obtained for the films deposited on annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate, measured at the frequency of 100 kHz with an applied electric field of 200 kV/cm. The high tunability has been attributed to the (1 0 0) texture of the films and larger grain sizes.     

Photoemission electron microscopy study of anthracene growth on Si(1 1 1)

The thin film growth of anthracene films on Si(1 1 1) surfaces is studied by photoemission electron microscopy (PEEM). The thin film growth of anthracene on Si(1 1 1) is similar to the growth of pentacene on silicon. Initially a layer of flat lying molecules chemisorbs on the surface. Subsequent growth of fractal islands with standing up molecules proceeds on top of this flat layer.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

α-Sexithiophene on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O: An STM and NEXAFS study

The adsorption of α-sexithiophene (6T) on Cu(1 1 0), Cu(1 1 0)-(2 × 1)O and the mesoscopically patterned Cu-O striped surface have been studied by STM (scanning tunnelling microscopy), XPS (X-ray photoelectron spectroscopy) and NEXAFS (near edge X-ray absorption fine structure). The molecular resolution of the STM allowed to determine the orientation and local order of the molecules in the submonolayer and monolayer regime. It is shown that the 6T molecules align with their long molecular axis along the densely packed copper rows on Cu(1 1 0) and along the Cu-O rows on the Cu(1 1 0)-(2 × 1)O surface. On the striped phase with alternating copper and Cu-O regions the molecules adsorb first on the Cu regions and after complete filling of these regions, on the Cu-O. The orientation is the same on both areas as on the respective pristine surfaces with the only exception that the molecules reorient by 90° if the width of the copper regions is smaller than the molecular length. The NEXAFS measurements allowed for a determination of the adsorption geometry of the molecules: while 6T lies flat on the surface on clean copper, the molecular planes are inclined with an angle as high as 39° with respect to the substrate on (2 × 1)O. For the latter, this inclination angle is 4° higher than in the bulk crystal structure of 6T observed for thicker films to release stress and allow commensurability with the substrate lattice, while for the former it is a result of the aromatic system bonding to the Cu(1 1 0) surface, as confirmed by XPS.     

ZnO thin films on Si(1 1 1) grown by pulsed laser deposition from metallic Zn target

ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 °C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19° with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 °C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed.     

Liquid crystal deposition on poled, single crystalline lithium niobate

For the purpose of elucidating the mechanisms for molecular organization at poled ferroelectric surfaces, single crystalline lithium niobate (LN), ‘Z-cut’ along the (0 0 0 1) plane, has been prepared and characterized and subsequently exposed to liquid crystal molecules. As a model system we chose to study the anchoring of 4-n-octyl-4′-cyanobiphenyl (8CB) to LN. Liquid crystalline films are of interest because of their useful electronic and optical properties as well as chemical sensing attributes. Low-energy electron diffraction (LEED), atomic force microscopy (AFM), surface contact angle measurements (CA), and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface of lithium niobate as well as the nature of 8CB films grown on the surface. Atomically flat LN surfaces were prepared as a support for monolayer thick, 8CB molecular domains. 8CB liquid crystal molecules were deposited by an ambient vaporization technique and the films were analyzed using XPS and CA. Understanding electrostatic anchoring mechanisms and thin film organization for this molecule on uniformly poled surfaces allows for a fuller appreciation of how molecular deposition of other polarizable molecules on periodically poled and patterned poled lithium niobate surfaces would occur.     

Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

The interplay between molecular orientation, film morphology and luminescence properties of tetracene thin films on epitaxial AlOx/Ni3Al(1 1 1)

We report a systematic study of the interplay between molecular orientation, film morphology and luminescence properties of tetracene thin films on epitaxial alumina films on Ni₃Al(1 1 1), employing high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and photoluminescence spectroscopy (PL). If deposited at low temperatures, tetracene forms laterally disordered and compact films in which at least the first monolayer is oriented parallel to the substrate. For thicknesses in the range of 10 Å or below, these as-deposited films show no luminescence, while thicker films exhibit weak luminescence from higher layers. On annealing to 210 K, tetracene films dewet the AlO_x/Ni₃Al(1 1 1) surface and transform into an island morphology. At the same time, molecules tend to re-orient into a more upright configuration. In this island configuration, even thin films show luminescence. We can thus conclude that in spite of the insulating nature of the surface, the interaction of flat-lying tetracene molecules with AlO_x/Ni₃Al(1 1 1) is strong enough to provide at least one efficient non-radiative decay channel.     

Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates

MnAs thin films were grown by metalorganic vapour-phase epitaxy (MOVPE) on GaAs(0 0 1), Si(0 0 1) and oxidised silicon substrates. All films are crystalline and contain only the ferromagnetic α-MnAs phase. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements show that films on GaAs(0 0 1) have strong preferential orientation, developing elongated grains parallel to [1 –1 0] GaAs while films on bare and oxidised Si are polycrystalline with irregular-shaped, randomly oriented grains. Magneto-optic Kerr effect (MOKE) measurements show good magnetic properties for films on GaAs, such as strong in-plane anisotropy and squareness of the hysteresis loop in the easy direction. A Curie temperature of 340 K, remarkably higher than the bulk material (315 K), was found for a 65 nm thick film on GaAs. Films grown on bare and oxidised silicon wafers had lower Curie temperature and were magnetically isotropic.     

Texture control of Pb(Zr, Ti)O3 thin films with different post-annealing processes

The non-crystalline Pb(Zr, Ti)O₃ thin films sputtered on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates at room temperature were crystallized by conventional furnace annealing (CFA) and rapid thermal annealing (RTA), respectively. It was found that the RTA process favored the (1 1 1)-preferred orientation in lead zirconate titanate (PZT) thin films while the CFA process favored the (1 0 0)-preferred orientation. The origin of the different orientation selection might be due to the different epitaxial nucleation mechanism. The long heating duration would lead to the aggregation of Pb and the formation of PbO(1 0 0) on film surface; therefore, the nucleation at the PbO(1 0 0)/PZT interface on film surface might lead to the (1 0 0)-preferred orientation. However, the nucleation at the PZT/Pt(1 1 1) electrode interface by RTA process would result in the formation of (1 1 1)-preferred orientation. The RTA-derived (1 1 1)-preferentially oriented PZT thin films exhibited a high remnant polarization of 35 μC/cm².     

Electrochemical Au deposition on stepped Si(1 1 1)-H surfaces: 3D versus 2D growth studied by AFM and X-ray diffraction

In order to grow magnetic layers on silicon substrates, a non-magnetic buffer layer is often needed to avoid silicide formation and to reproduce the perpendicular magnetic anisotropy obtained on metal single crystals, as in the case of Co on Au(1 1 1) and Pt(1 1 1). In this context, we have studied the electrochemical growth of Au buffer layers, and show that it is possible to obtain different film morphologies on hydrogen-terminated vicinal Si(1 1 1) surfaces by varying the electrochemical deposition parameters and solution composition. Two different morphologies have been obtained as observed by atomic force microscopy: continuous 2D Au films (chloride solution at pH 4), and films consisting in flat top 3D Au islands decorating the Si(1 1 1) step edges (cyanide solution at pH 14). X-ray diffraction measurements reveal that the gold layer and islands have Au(1 1 1) orientation and are in epitaxy with the Si(1 1 1) surface. In the case of islands, the lateral facets have also Au(1 1 1) orientation. Results are discussed within a model in which the breaking of the Si-H surface bonds plays a major role in the Au nucleation and growth mechanisms.     

Adsorption of cobalt phthalocyanine on a Si(1 0 0) surface with Bi-line structures as evaluated by scanning tunneling microscopy

We report the reaction dynamics of cobalt phthalocyanine (CoPc) molecules with Bi-line structures (BLSs) on a Si(1 0 0) surface, investigated using scanning tunneling microscopy (STM). When CoPc molecules were deposited on a Si(1 0 0) surface with BLSs at room temperature, single-spot protrusions were observed in the STM image instead of four-spot images corresponding to CoPcs flat molecular structure. Moreover, domains with a c(4 × 4) periodicity appeared on the terraces of the Si(1 0 0) surface. This indicates that CoPc molecules may have decomposed on the surface by catalytic reaction with Bi atoms.     

Molecular adsorption and growth of naphthalene films on Ag(1 0 0)

The adsorption of naphthalene, vacuum deposited on a Ag(1 0 0) surface, was comprehensively investigated by means of low-energy electron diffraction (LEED), temperature-programmed thermal desorption (TPD) spectroscopy, X-ray photoelectron spectroscopy (XPS), and polarization-dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy in the mono- and multilayer regime. A growth of long-range ordered monolayer at 140 K is observed with LEED. The polarization-dependent C 1s NEXAFS shows that the naphthalene molecules in the monolayer lie almost parallel to the Ag(1 0 0) surface. With increasing film thickness, the molecular orientation turns to upright position. Furthermore, NEXAFS measurements show that in the multilayer regime the molecular orientation depends on the substrate temperature during deposition.     

Monitoring the ordering in biomolecular films on vicinal silicon surfaces by reflectance difference/anisotropy spectroscopy

DNA base molecules, adenine, thymine, guanine, and cytosine may be employed as charge transport molecules in biomolecular electronic devices. Their electronic properties are comparable with those of inorganic wide bandgap materials, e.g. GaN with the absorption onset in the near ultra-violet (UV) range. A recent field effect transistor study based on a modified DNA base revealed that the prototype bio-transistor gives rise to a better voltage gain compared to one based on carbon nanotubes (CNTs) [G. Mauricio, P. Visconti, V. Arima, S. D’Amico, A. Biasco, E. D’Amone, R. Cingolani, R. Rinaldi, Nanoletters 3 (2003) 479]. Here, in situ reflectance difference/anisotropy spectroscopy (RDS/RAS) is employed under ultra-high vacuum (UHV) conditions for monitoring the growth of DNA base molecules on vicinal hydrogen passivated Si(1 1 1) surfaces. Such vicinal substrates consisting of steps and terraces may serves as suitable templates for molecular ordering. Indeed, RDS/RAS measurements reveal information about molecular ordering of DNA bases induced by the density of steps on silicon surfaces. All four molecules, however, behave differently on the vicinal substrates. The first transition dipole moments corresponding to adenine and thymine molecules align mainly perpendicular to the step edge direction while for guanine and cytosine they align parallel to this direction, however, only in very thin layers. The RDS/RAS signal of the guanine and cytosine layers with thicknesses above 20 nm saturates due to a loss of ordering at higher coverages. Additionally, time-resolved RDS/RAS measurements at the silicon E₂ (4.25 eV) critical point (CP) demonstrate the sensitivity to the biomolecular/inorganic interface formation.     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.