(Pb0.97La0.02)(Zr0.65Sn0.35-xTi x)O3反铁电陶瓷的热膨胀性质

在-100—200℃温度范围内，测量了(Pb_0.97La_0.02)(Zr_{0.65< /sub>Sn0.35-xTix)O3(PZST，0.1≤x≤0.14)反铁电陶 瓷的热膨胀性质.实验结果表明，组分在0.1 ≤x≤0.12的试样室温下为反铁电(AFEt)四方相，热膨胀系数(α)在低温段发生 “弯曲” ，而变温x射线衍射谱(XRD)显示材料保持四方相结构；当Ti含量在0.125≤x≤0.14时，室温 下是铁电三方相(FER)，温度升高时FER→AFEt相变体 积收缩，AFEt→立方顺电(PE c)相变体积增大；变温XRD谱证明了材料相结构随温度的转变过程.用多元复杂 化合物存在 纳米线度组分非均匀的观点解释了热膨胀性质随Ti含量演化的物理机理，并得到了该系统的 温度-Ti(x)含量相图. 关键词： 热膨胀性质 铁电/反铁电相界 反铁电陶瓷 PZST}     

Phase formation and dielectric phase transition in Ba1−xCaxTi0.6Zr0.4O3 solid solutions

Perovskite types Ba_1−xCa_xTi_0.6Zr_0.4O₃ (with x=0.0-0.5) ceramics have been prepared through solid state reaction route. The room temperature XRD study suggests the compositions with x=0.0 and x=0.1 have single phase cubic symmetry. With further increase in Ca content, solid solution breaks and an orthorhombic CaTiO₃ like phase is developed. The dielectric study on single phase compositions (x=0.0 and 0.1) reveals that the materials are of relaxor type and undergo a diffuse type ferroelectric phase transition. In the Ca containing composition higher transition temperature is observed than the pure BaTi_0.6Zr_0.4O₃ materials. In the paraelectric region (above T_c) lower diffusivity is observed in the Ca containing composition. The strength of relaxation is calculated and found to be more in Ca containing material than that of pure BaTi_0.6Zr_0.4O₃ composition.     

Dielectric properties and phase transitions of (Pb0.87La0.02Ba0.1)(Zr0.6Sn0.4−xTix)O3 ceramics with compositions near AFE/RFE phase boundary

The electrical properties and phase transition behavior of (Pb_0.87La_0.02Ba_0.1)(Zr_0.6Sn_0.4−xTi_x)O₃ solid solutions (PLBZST, 0.04≤x0.2) were investigated by the X-ray diffraction, permittivity, pyroelectric current, and P-E electric hysterisis loops. As the composition x increased from 0.04 to 0.2, the antiferroelectric ceramics (x≤0.07, AFE) with tetragonal phase changed to the ferroelectric relaxors (RFE, 0.09≤x). AFE ceramics showed a peculiar diffuse phase transition and dielectric relaxation at the low temperature (down to −100 °C) due to a frustration between AFE and FE state. With an increase in composition x, electrically field-induced AFE-FE switching field (E_AFE-FE) and AFE-paraelectric (PE) phase transition temperature (T_c) are depressed in the temperature (T)-Ti composition (x) phase diagram, a FE-AFE-PE triple phase point (T_tr) with the lowest transition temperature occurred at x=0.09. The pyroelectric currents under an application of various external electric field (E) were measured to identify a T-E phase diagram of the PLBZST compound.     

Influence of Ba-substitution on the structural and ferroelectric properties of Pb1− x Ba x Zr0.40Ti0.60O3 ceramic materials

This work presents a comprehensive study about the influence of Ba-substitution on the structural and ferroelectric properties of Pb_1?x Ba _x Zr_0.40Ti_0.60O₃ (PBZT) ceramic system. Pb_1?x Ba _x Zr_0.40Ti_0.60O₃ ceramic samples were then prepared by solid state reaction method and characterized as a function of composition and temperature by X-ray diffraction (XRD) and impedance spectroscopy techniques. The dielectric measurements show that the substitution of Pb²⁺ for Ba²⁺ ions leads to a diffuse behavior of the dielectric permittivity curves for all samples and that only the x?=?0.50 sample presents a typical relaxor behavior. In good agreement with dielectric measurements, the structural phase transition study showed a phase transition from a tetragonal structure with P4mm space group to a cubic structure with Pm-3m space group for all samples, except for the x?=?0.50 sample were a cubic structure was observed in the complete temperature interval measured.     

Structural and dielectric properties in the (Ba1−xCax)(Ti0.95Zr0.05)O3 ceramics

Lead-free (Ba_1−xCa_x)(Ti_0.95Zr_0.05)O₃ (x = 0.05-0.40) (BCZT) ceramics were prepared by solid-state reaction technique. XRD results show that the samples in the composition range of 0.05 ≤ x ≤ 0.25 exhibit pure perovskite structures and undergo a polymorphic phase transitions from orthorhombic to tetragonal phase around room temperature. The biphasic structures are detected at x ≥ 0.30 and the dielectric peaks become broad and dielectric constants decrease with increasing Ca content. Ca replacement at Ba site leads to diffuseness, whereas Ca occupancy at Ti site leads to decrease of the T_c.     

Piezoelectric properties of new ternary Bi1/2(Na, Li)1/2TiO3–(Bi1/2K1/2)TiO3–Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

0.852[Bi_1/2(Na_1?x Li _x )_1/2]TiO₃?C0.110(Bi_1/2K_1/2)TiO₃?C0.038Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BNLT?CBKT?CBCTZ-x) new ternary piezoelectric ceramics were fabricated by the conventional solid-state method, and their piezoelectric properties as a function of the Li content were mainly investigated. A?stable solid solution with a single perovskite structure has been formed, and the depolarization temperature (T _d) of these ceramics was identified by using the temperature dependence of the dielectric loss. The T _d value of these ceramics gradually decreases, while the T _m value increases with increasing the Li content. The dielectric constant increases and the dielectric loss decreases with increasing the Li content, and an enhanced piezoelectric behavior of d ₃₃??223 pC/N and k _p??35.2?% has been demonstrated in these ceramics with x=0.06.     

Giant dielectric constant observed in Ba0.96Sr0.04Zrx Y0.005Ti0.995–xO3–δ ceramics

Ba_0.96Sr_0.04Zr_x Y_0.005Ti_0.995–xO_3–δ ceramics were prepared by conventional sintering. The dielectric properties and the Curie temperature of the ceramics were studied. The Ba_0.96Sr_0.04Zr_x Y_0.005Ti_0.995–xO_3–δ ceramics (x = 0.04) exhibit a giant dielectric constant (ε_r ～ 10⁵). The peak value of dielectric constant is ～250,000 at 100 Hz and ～70,000 at 1 MHz for Ba_0.96Sr_0.04Zr_x Y_0.005Ti_0.995–xO_3–δ ceramics (x = 0.04). The results show that Ba_0.96Sr_0.04Zr_x Y_0.005Ti_0.995–xO_3–δ (x = 0.04) ceramics are a promising candidate material for microelectronic applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Index of refraction in ‘dirty’ displacive ferroelectrics

We report measurements of the optic index of reflection as a function of temperature, n(T), for several highly disordered ferroelectrics: PLZT ceramic [Pb_1?xLa_x(Zr_0.65Ti_0.35)_1?x/4O₃ where x = 0.08] and single crystals of Pb₃(MNb₂)O₉ where M = Zn and Mg. The results are qualitatively different from the unusual displacive ferroelectric behavior and the difference is clearly due to local disorder.     

Structural and dielectric characterization of Sr substituted Ba(Zr,Ti)O<Subscript>3</Subscript> based functional materials

Single phase Sr substituted BaZr_0.1Ti_0.9O₃ (also known as BZT) ceramics with a formula Ba_1-xSr_xZr_0.1Ti_0.9O₃ (x=0.10, 0.20, 0.30, 0.40 and 0.50) are prepared using a solid state reaction of mixed oxides at 1250 °C for 15 h. Analysis of XRD patterns of the ceramic powders show that Sr substitutes into Ba sites and reduces the lattice parameter. The powders are sintered at 1600 °C for 6 h to investigate the microstructure and functional properties. It is found that strontium substitution significantly modifies the microstructure and greatly influences the dielectric properties. The increase in Sr content reduces the ceramic grain size and results in spherical grains. With an increase in Sr content, the Curie temperature is lowered, and the relative permittivity maximum is increased and broadened. In Ba_1-xSr_xZr_0.1Ti_0.9O₃ with x=0.30, the relative permittivity reached a maximum of 26600 and with further increase of Sr content, the relative permittivity is lowered and the phase transition is found to be broad and diffused. The ferroelectric hysteresis characteristics are discussed in detail. PACS 77.84.-s; 77.80.Bh; 77.22.Ch; 77.84.Dy; 77.22.-d     

Searching for key parameter for determining Tc in Fe-based superconductors: Study of P/As substitution in RFe(P,As)(O,F) [R=La and Nd]

We have investigated the relation between the temperature-dependence of resistivity and superconducting transition temperature T_c in RFeP_1−xAs_xO_0.90F_0.10 (x=0-1.0) (R=La and Nd). In contrast to the linear change of the crystal structure with increasing x, the temperature dependence of resistivity and T_c show non-monotonous x-dependence. When the As concentration x is increased, the temperature-dependence of resistivity changes from T² to T-linear, and T_c distinctly increases in all the La compounds and the Nd ones with x<0.60. The results indicate that the substitution of As for P induces the spin fluctuation and resultantly enhances T_c. On the other hand, we could not find any relation between the temperature-dependence of resistivity and T_c in the Nd samples with x>0.60. This may suggest the existence of other parameters for determining T_c besides the antiferromagnetic correlation in this system.     

(Ba, Ca)(Ti, Zr)O3-BiFeO3 lead-free piezoelectric ceramics

Effects of BiFeO₃ (BFO) content on the microstructure and electrical properties of Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BCTZ) ceramics prepared by normal sintering in air were investigated. A stable solid solution is formed between BCTZ and BFO. The grain size gradually becomes smaller, and the ceramics become denser with increasing the BFO content. The Curie temperature, dielectric constant, and dielectric loss of BCTZ ceramics decrease simultaneously with the introduction of BFO. Moreover, the remanent polarization reaches a maximum at x = 0.2 mol%, and the coercive field continuously increases with increasing the BFO content due to the introduction of BFO with a higher coercive field. Improved piezoelectric properties (d₃₃ ∼ 405 pC/N and k_p ∼ 0.44) are demonstrated for the BCTZ ceramic with x = 0.2 mol%.     

Effects of yttrium substitution on structural and electrical properties of barium zirconate titanate ferroelectric ceramics

In the present study, structural, dielectric and ferroelectric properties of Ba_1?3x/2Y_x Zr_0.025Ti_0.975O₃ ferroelectric ceramics have been investigated. The compound was synthesized using solid state reaction technique. The effect of yttrium substitution on structural, dielectric and ferroelectric properties was studied using X-ray diffractometer, scanning electron microscopy (SEM), LCR meter and P–E loops. Phase analysis shows the formation of secondary phase YTi₂O₆ for Y ≥ 2.5 mol% substitution. The microstructural investigation shows that Y substitution significantly reduces the grain size. An increase in Y content up to 2.5 mol% increases the Curie temperature (T_c) initially but decreases subsequently. The maximum dielectric constant at T_c has been observed for 2 mol% Y substitution and with further increase in Y content the dielectric constant decreases considerably. The solubility limit is found to be 2.5 mol% of Y and after that some of the yttrium atoms enter B-sites and leading to the formation of the secondary phase. The P–E loop studies show that there is an increase in the coercive field with increasing Y content.     

Relaxor behaviour in PZN-PT-BT ferroelectric ceramics

The relaxor behaviour of the (Pb_0.8Ba_0.2)[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃ ferroelectric ceramic is presented. A strong dispersion of the maximum of the dielectric permittivity (ε′) below the transition temperature (T_m) is observed, which shift towards higher temperatures with increasing frequency. There is a strong deviation from the Curie-Weiss law. The results are fitted by using the Volger-Fulcher relationship, showing typical behaviour of a spin glass system. The hysteresis loops suggest relaxor behaviour.     

Structural and dielectric properties of phosphorous-doped PLZT ceramics

In the present work we have reported the unique effects of P₂O₅-doped PLZT ceramics with composition (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃ +x wt% of P₂O₅ (wherex = 1, 3 and 5) prepared chemically by co-precipitation method. X-ray diffraction studies suggest that the prepared compound was very fine (10–25 nm), homogeneous and of rhombohedral symmetry. The apparent density of samples decreased with the P⁵⁺ additions. Studies of dielectric constant and dielectric loss as a function of frequency (10–1000 kHz) and temperature suggest that the compound undergoes diffuse type of phase transition without any sign of relaxor behaviour. With increasingx, dielectric constant was found to decrease appreciably, whereas Curie temperature (T_C) was found to increase     

Piezoelectric activities and domain patterns of orthorhombic Ba(Zr,Ti)O3 ceramics

Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were prepared by conventional solid-state reaction method. Crystalline structures were analyzed by X-ray diffraction. It was shown that all the Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were of orthorhombic phase at room temperature. Piezoelectric activities and domain patterns were investigated and compared with those of BaTiO₃ ceramic. All the Ba(Zr_xTi_1?x)O₃ ceramics showed nearly the same d₃₃ values of about 265 pC/N and the same domain width of about 220 nm. By comparing the grain sizes and domain width of the Ba(Zr_xTi_1?x)O₃ ceramics with those of BaTiO₃ ceramic, it is speculated that the variation of domain width with grain sizes in orthorhombic Ba(Zr_xTi_1?x)O₃ ceramics may be different with that in tetragonal BaTiO₃ ceramic. Besides domain width, the effective inertia mass of domain wall is also considered to be a very important factor that impacts the piezoelectric activities of the Ba(Zr_xTi_1?x)O₃ ceramics.     

Rietveld analysis and multiferroic properties of Fe doped Ba0.95Bi0.05TiO3 ceramics

We report on the structural, magnetic and ferroelectric properties of Fe doped Ba_0.95Bi_0.05TiO₃ (Ba_0.95Bi_0.05Ti_1−yFe_yO₃ (0 ≤ y ≤ 0.1)) ceramics prepared by solid state reaction. Rietveld analysis shows that compounds with y ≤ 0.07 have a single phase-tetragonal structure (space group P4mm), and the tetragonality (c/a) decreases as x increases. Ba_0.95Bi_0.05Ti_0.93Fe_0.07O₃ ceramic shows ferromagnetic order with a Curie temperature of about 700 K and ferroelectric order at room temperature. These results indicate that the Ba_0.95Bi_0.05Ti_0.93Fe_0.07O₃ can be useful as a multiferroic material.     

Structure and dielectric properties of PZT-type ceramics with the diffuse phase transition

In the present work the (Pb_0.84Ba_0.16)(Zr_0.54Ti_0.46)O₃ (PBZT) solid solution has been synthesized. The process of preparation was investigated by simultaneous thermal analysis (STA) and X-ray diffraction method. The hot pressing method was utilized for densification of ceramic samples. Dielectric properties of donor- and acceptor-doped PZT-type ceramics were measured within the temperature range including the phase transition region. Frequency-dependent relaxation behaviour in PBZT ceramics was found. The structural phase transition at T?=?(517?±?3)?K was determined by X-ray diffraction method. Arrhenius plot of total conductivity derived from ac impedance spectroscopy measurements was used for characterisation of phase transition. Changes in activation energy were found characteristic of phase transition in PBZT ceramics.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.     

Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

The antiferroelectric (Pb_0.985Sm_0.01) (Zr_1-xTi_x)O₃ (Ti-PSZO) thin films were synthesized on Pt(111)/Ti/SiO₂/Si substrates using a chemical solution deposition method. The films were crystallized in the perovskite phase with a preferential orientation along (111) direction. With Ti doping in PSZO, a gradual transformation from antiferroelectric to ferroelectric phase transition was noticed at room temperature owing to the Ti doping induced lattice distortion. The phase transition has been confirmed through the P - E hysteresis loops, X-ray diffraction (peak shifting), capacitance-voltage measurements, and Raman scattering analysis. The thin film with Ti = 0.15 doping displayed a ferroelectric behavior with high dielectric constant and large dielectric tunability of about 62%. Also, Ti doping altered the Curie temperature (T_c) and enhanced the order of dielectric diffuseness. It is believed that Ti-doping in PSZO is an effective way to induce an antiferroelectric - ferroelectric phase transition and to tailor the electrical characteristics of PSZO thin films.     

PLZST反铁电陶瓷电场诱导相变与相稳定性的研究

在三方铁电(FE)-四方反铁(AFE)的准同型相界附近制备了一系列组份为(Pb_0.97La_0.02)(Zr_1-x-ySn_yTi_x)O₃(x=0.09或0.1;0.16≤y≤0.38)的反铁电陶瓷.研究了Sn含量y对电场诱导AFE→FE相变电场E_c、反铁电双电滞回线损耗ΔE、以及温度诱导FE→AFE相变温度T_FE，AFE→顺电(PE)相变温度T_c的影响.沿AFE-FE相界Ti含量一定的条件下，E_c随着Sn含量y的增加而增大，ΔE减小，T_FE与T_c均降低.场诱相变的回线参量E_c，ΔE与相变温度T_FE和T_c相关联.在直流偏压下用原位X-射线衍射表征了相变时晶格结构的变化，结果表明，当电场达到AFE→FE相变临界场时，伴随相变的发生，晶格结构由四方相转变为三方相，晶胞体积增大. 关键词：