二聚物X2 和 XK (X= Mn, Fe, Co, Ni, Cu)吸附NO的密度泛函理论研究

为有效降低NO对环境以及人体造成的危害,着重从催化剂入手,研究过渡金属Mn₂, Fe₂, Co₂, Ni₂, Cu₂及K掺杂的MnK, FeK, CoK, NiK, CuK的二聚物对NO的吸附性能.采用密度泛函理论的B3LYP, B3PW91, B3P86, B1B95以及PBE1PBE方法结合LANL2DZ, SDD, CEP-121G基组,采用B3LYP, B3PW91, B3P86以及PBE1PBE方法结合6-31++G(3df, 3pd), 6-311++G(3df, 3pd), 6-31G(d, p), LANL2DZ, SDD基组分别系统研究了X₂和XK (X=Mn, Fe, Co, Ni, Cu)团簇和NO的几何结构,计算出其键长,频率,离解能,再与对应的实验值进行对比.进一步采用PBE1PBE方法结合LANL2DZ和6-31G(d, p)基组研究了X₂NO和KXNO团簇的几何结构,计算出各原子间键长和吸附能.结果表明,...     

Ti_3AC_2相(A=Si,Sn,Al,Ge)电子结构、弹性性质的第一性原理研究

采用第一性原理的密度泛函理论平面波赝势法,通过广义梯度近似研究了Ti_3AC_2相(A=Si,Sn,Al,Ge)的相结构、能量、电子结构和弹性性质.首先对六方晶相结构的Ti_3AC_2(A=Si,Sn,Al,Ge)四个相进行几何优化,对其能带结构、总态密度、分态密度和电荷密度分布以及弹性性质进行研究,并计算各相的内聚能与形成能.计算结果表明:Ti_3GeC_2较其他三相稳定,Ti_3AlC_2的形成能最低,说明Ti_3AlC_2较Ti_3SiC_2,Ti_3SnC_2和Ti_3GeC_2更易生成;Ti_3AC_2(A=Si,Sn,Al,Ge)各相在费米能级处的电子态密度较高,材料表现出较强的金属性,同时各相的导电性为各向异性.Ti_3AC_2(A=Si,Sn,Al,Ge)各相的导电性主要由Ti的3d电子决定,A(A=Si,Sn,Al,Ge)的p态电子和C的2p态电子也有少量贡献.决定材料电学性质的主要是Ti的3d,A的P和C的2P态电子的P-d电子轨道杂化,而P-d电子轨道杂化成键则使材料具有比较稳定的结构;对Ti_3AC_2相(A=Si,Sn,Al,Ge)弹性性质的研究表明Ti_3AlC_2的原子间结合力较弱,而Ti_3GeC_2的原子间结合力相对较强,材料的强度较大.     

第一性原理比较研究MnPm(M=Al,Ga,In,2≤n+m≤3)团簇

利用密度泛函理论对MnPm (M=Al,Ga,and In,2≤n+m≤3)团簇的几何和电子结构性质及稳定性进行了研究.结果表明,三原子的MnPm团簇是二重态,而单体则是三重态.富P的MP2团簇是具有C2V对称性的等腰三角形结构,而富M的M2P团簇则是具有Cs对称性的三角形结构.在三原子磷化物团簇中,MP2团簇比M2P团簇稳定,而后者中M-P键的强度比前者强.对于这些小的磷化物团簇,电离势高于裂解能,表明裂解比电离占优势.Ga2P比Al2P和In2P的HOMO-LUMO能隙和电离势都高,归咎于在富金属的M2P团簇中,相对较强的Ga-P键.     

Structural phase transition behaviour of ZnaSb3 and its substitutional compounds （Zn0.98M0.02）4Sb3 （M = Al,Ga and In） at low temperatures

Structural phase transitions of Zn4Sb3 and its substitutional compounds (Zn0.98M0.02)4Sb3 (M = Al, Ga and In) are investigated by electrical transport measurement and differential scanning calorimetry below room temperature. The results indicate that both β→α and α→α′ phase transitions of Zn4Sb3 are reversible and exothermic processes, which may be explained as that both the transitions originate from the ordering of the disordered interstitial Zn and vacancies in regular sizes. The derived activation energies of β→α and α→α′ phase transition processes for Zn4Sb3 are E1 = 3.9 eV and E2 = 4.1 eV, respectively. Although no remarkable influence on activation energy E2 is observed after Al doping, Al substitution for Zn causes E1 to increase to 4.6 eV, implying its suppression of βα transition to a great extent. Moreover, it is found that both βα and αα′ transitions are completely prohibited by substitution of either In or Ga for Zn in Zn4Sb3. The underlying mechanisms for these phenomena are discussed.     

第一性原理比较研究MnPm (M=Al, Ga, and In,2≤n+m≤3)团簇

利用密度泛函理论对MnPm (M=Al,Ga,and In)团簇的几何和电子结构性质及稳定性进行了研究。结果表明,三原子的MnPm团簇是二重态,而单体则是三重态。富P的MP2团簇是具有C2V对称性的等腰三角形结构,而富M的M2P团簇则是具有Cs对称性的三角形结构。在三原子磷化物团簇中,MP2团簇比M2P团簇稳定,而后者中M-P键的强度比前者强。对于这些小的磷化物团簇,电离势高于裂解能,表明裂解比电离占优势。 Ga2P比Al2P和In2P的HOMO-LUMO能隙和电离势都高,归咎于在富金属的M2P团簇中,相对较强的Ga-P键。     

石墨炉原子吸收法中硝酸钙作为基体改进剂的作用

研究了石墨炉原子吸收法测定Al、B、Ba、Be、Cd、Dy、Ge、P、Se、Sm和Sn时Ca(NO_3)_2的作用。结果表明,Ca(NO_3)_2能显著提高Al、B、Be、Dy、Ge和Sn的灵敏度和灰化温度,并能降低原子化温度,增强抗干扰能力。探讨了Ca(NO_3)_2的增感机理,并测定了某些环境试样中的痕量Al、B和Be。     

热退火处理对AuGeNi/n-AlGaInP欧姆接触性能的影响

本文在n-(Al0.27Ga0.73)0.5In0.5P表面通过电子束蒸发Ni/Au/Ge/Ni/Au叠层金属并优化退火工艺成功制备了具有较低接触电阻的欧姆接触,其比接触电阻率在445℃退火600 s时达到1.4×10–4 W·cm2.二次离子质谱仪测试表明,叠层金属Ni/Au/Ge/Ni/Au与n-AlGaInP界面发生固相反应,Ga,In原子由于热分解发生外扩散并在晶格中留下Ⅲ族空位.本文把欧姆接触形成的原因归结为Ge原子内扩散占据Ga空位和In空位作为施主提高N型掺杂浓度.优化退火工艺对低掺杂浓度n-(Al0.27Ga0.73)0.5In0.5P的欧姆接触性能有显著改善效果,但随着n-(Al0.27Ga0.73)0.5In0.5P掺杂浓度提高,比接触电阻率与退火工艺没有明显关系.本文为n面出光的AlGaInP薄膜发光二极管芯片的n电极制备提供了一种新的方法,有望大幅简化制备工艺,降低制造成本.     

利用第一性原理方法研究CuXSe_2(X=B,Al,Ga,In,Tl)力学性质

在广义梯度近似(GGA)和局域密度近似(LDA)下,采用第一性原理方法研究CuXSe2(X=B,Al,Ga,In,Tl)晶体结构的稳定性和力学性质.分析CuXSe2(X=B,Al,Ga,In,Tl)结构的晶格常数,弹性常数,体积模量,剪切模量,杨氏模量,泊松比,对比各材料的力学性质变换规律.计算结果表明,根据力学稳定判据,在零温零压下,CuXSe2(X=B,Al,Ga,In,Tl)的晶体结构是力学稳定的.经过同主族替换,发现晶格常数越大,体弹性模量就越小.这可以解释为X离子半径逐渐增大,晶格常数逐渐增加,晶体的可压缩性也增加.另外,CuTlSe2的剪切模量最小,不容易发生剪切形变.CuBSe2的杨氏模量最大,其刚度最高.由Pugh经验关系可知CuXSe2(X=B,Al,Ga,In,Tl)均属于韧性材料.     

CuX(X=Al, Ga, In)分子的势能函数与稳定性的密度泛函研究

根据原子分子反应静力学原理导出了CuX(X=Al,Ga,In) 分子基态电子状态及其离解极限,并在B3LYP/LANL2DZ水平上计算了平衡几何、振动频率和解离能.利用Murrell-Sorbie 函数拟合出了解析势能函数,并计算出光谱参数和力常数.计算结果表明该分子体系是稳定存在的,其稳定性排序为 CuAl＞CuGa＞CuIn.     

Zn1-xTMxO (TM=Al,Ga, In)导电性能的模拟计算

基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 构建了未掺杂与相同掺杂浓度的Zn_1-xTM_xO (TM=Al, Ga, In) 超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明, 分别高掺杂 (Al, Ga, In) 相同原子分数3.125 at%的条件下, In掺杂对ZnO导电性能最好的结果, 计算结果和实验结果相一致. 关键词： (Al,Ga,In) 高掺ZnO 导电性能 第一性原理     

Impurity doping into Mg2Sn: A first-principles study

We studied the formation energy and atomic structure of impurities in Mg₂Sn using first-principles plane-wave total energy calculations. Twenty elements, namely H, Li, Na, K, Rb, Sc, Y, La, Cu, Ag, Au, B, Al, Ga, In, N, P, As, Sb, and Bi, were selected as the impurity species. We considered structural relaxation of the atoms within the second nearest neighbors of the impurity atom in the 48-atom supercell. The results of the formation energy calculations suggested that Sc, Y, La, P, As, Sb, and Bi are good n-type dopants whereas Li and Na are good p-type dopants. The electrical properties of Li-, Na-, and Ga-doped Mg₂Sn and La-doped Mg₂(Si, Sn) composites reported previously can be explained by the low formation energies of Li, Na, Ga, and La in Mg₂Sn.     

Mn5Ge2.7M0.3 (M=Ga，Al，Sn) 化合物的磁性和磁熵变

研究了Mn₅Ge_2.7M_0.3(M=Ga，Al，Sn)化合物的磁性和磁熵变. x射线衍射实验表明，研究的化合物均呈六角Mn₅Si₃型结构. 三种原子对Ge原子的替代，使得平均Mn原子磁矩下降，但居里温度没有明显的变化. 由于磁矩的降低，导致磁熵变值的下降，在磁场变化为4.0×10⁶A·m^-1时，对应于M=Ga，Al和Sn的样品，最大磁熵变值ΔS^max_Ｍ分别为6.1，6.3和5.3J·kg^-1K^-1，但磁熵变峰值的半高宽ΔＴ_ＦＷＨＭ有所增加. 另外，Mn₅Ge_2.7M_0.3(M=Ga，Al，Sn)化合物在高于居里温度的Arrott曲线上出现了一个不连续点，即样品在一定温度下的顺磁磁化率在某一临界磁场下发生了突变，临界磁场与温度几乎呈正比关系.这可能是由于样品在加一定磁场时3d带的费米能级发生了变化，使得有效电子数的减少所致. 关键词： 居里温度 平均Mn原子磁矩 磁熵变 Arrott图     

A3M2GeO12石榴石体系中Cr^3＋离子的宽带发射光谱

首次报道在Ａ３Ｍ２Ｇｅ３Ｏ１２：Ｃｒ（Ａ＝Ｃｄ＾２＋,Ｍ＝Ａｌ＾３＋,Ｇａ＾３＋,Ｓｃ＾３＋）锗酸盐石榴石体系中,Ｃｒ＾３＋离子室温下的红－近红外宽发射带光谱性质。随位于八面体格位上的Ａｌ＾３＋→Ｇａ＾３＋→Ｓｃ＾３＋和十二面体格位上的Ｃｄ＾２＋→Ｃａ＾２＋组成顺序变化,室温下,Ｃｒ＾３＋离子的＾４Ｔ２→＾４Ａ２能级跃迁的Ｒ－ＮＩＲ宽发射带,发射峰及光谱的长波和短波边逐渐向低能长波边移动。     

Structures and electronic properties of M@Au<Subscript>6</Subscript> (M=Al,Si, P,S, Cl,Ar) clusters: a density functional theory investigation

The geometries and electronic properties of the 3p electrons atoms doped gold cluster: M@Au₆ clusters (M=Al, Si, P, S, Cl, Ar) have been systematically investigated by using relativistic all-electron density functional theory (VPSR) and scalar relativistic effective core potential Stuttgart/Dresden (SDD) basis. Generalized gradient approximation in the Perdue-Burke-Ernzerhof (PBE) functional form is chosen for geometry optimization. A number of new isomers are obtained for neutral M@Au₆ clusters. Both PBE/VPSR and PBE/SDD methods give similar lowest energy structure of each M@Au₆cluster. With the exception of Ar@Au₆, all doped clusters show larger relative binding energies compared with pure Au₇ cluster. It is found that all the ground-state structures of the M@Au₆ clusters prefer the low symmetry structures, which is very different to the 3d transition-metal impurity doped Au₆ clusters. Our results are in excellent agreement with available experiment data.     

Ca3Al2M3O12（M=Si,Ge）石榴石中Ce^3＋离子的荧光光谱

本文研究了Ｃａ３Ａｌ２Ｍ３Ｏ１２（Ｍ＝Ｓｉ，Ｇｅ）石榴石中Ｇｅ＾３＋离子的荧光光谱。在这两种石榴石中，Ｃｅ＾３＋的发射光谱均为Ｃｅ＾３＋的５ｄ→４ｆ能级跃迁发射宽谱带，但有很大差异。在锗酸盐中，Ｃｅ＾３＋的发射强度很弱，而在硅酸盐中发射强，２９５和７７Ｋ下在Ｃａ３Ａｌ２Ｓｉ３Ｏ１２中Ｃｅ＾３＋的荧光寿命分别为４６和４９ｎｓ。Ｇｄ＾３＋和助溶剂的引入可提高Ｃｅ＾３＋的发射强度。     

Element segregation on the surfaces of pure aluminum foils

The surface segregation trend of trace elements in pure aluminum foils was investigated by density functional theory. The model of nine-layer Al(1 0 0) slab substituted partially by trace element atoms was proposed for calculating surface segregation energy. The calculating results show that (i) B, Mg, Si, Ga, Ge, Y, In, Sn, Sb, Pb and Bi exhibit negative segregation energy and possibly move to the surface, while Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zr exhibit positive segregation energies and migrated into the bulk; (ii) the segregation energy was found to be related with the covalent radius, the relaxed position at the surface of the substituting atom and the surface energy; (iii) the segregation behavior of trace element generates lots of defects and dislocation, which can increase the initial pitting nucleation sites in the surface of aluminum foils; (iv) the impurity atom concentration was tested with Pb-doped surfaces, the calculated negative segregation energies in all coverage increases rapidly with the Pb coverage. These conclusions are helpful for designing of the chemical composition and to advance the tunnel etching of aluminum foils.     

Band structure and magnetic properties of M3M’C antiperovskites (M=Mn, Fe; M′=Zn, Al, Ga, Sn)

LMTO-ASA nonempirical self-consistent method has been used to study the electron band structure of the cubic antiperovskites M₃M’C (M=Mn, Fe; M′=Zn, Al, Ga, Sn) in ferromagnetic state, and to calculate the local atomic magnetic moments. The results obtained are compared with previous calculations and available experimental data. Fiz. Tverd. Tela (St. Petersburg) 40, 1667–1670 (September 1998)     

H2在Li掺杂Al6Si+上吸附的理论研究

本文利用密度泛函理论的B3LYP/6-31G(d, p)和组态相互作用的QCISD/6-31G(d, p)研究了Al6Si+和Al6SiLi+团簇的几何和电子结构及其对H2分子的吸附,两种不同方法计算的H2分子在团簇上的吸附能非常一致。H2分子在Al6Si+团簇上的吸附能仅为-0.018 eV,Al6Si+团簇中掺杂Li原子可以明显增强其对H2分子的吸附。Al6SiLi+团簇吸附一个H2分子的吸附能可以达到-0.157 eV,吸附五个H2分子的平均吸附能为-0.088 eV。态密度和自然键轨道分析表明,电荷从Li原子向Si原子转移,H2分子在带正电的Li离子产生的电场中发生极化,从而在静电相互作用下吸附在Li原子周围。     

Pressure tuned ferromagnetism in CeRu(2)M(2)X (M = Al, Ga; X = B, C)

The temperature (T)-pressure (P) phase diagrams are reported for the tetragonal layered compounds CeRu(2)Al(2)B, CeRu(2)Ga(2)B, and CeRu(2)Ga(2)C, studied by magnetization, specific heat and electrical resistivity. These systems exhibit localized 4f magnetic ordering with ferromagnetic ground states at T(C)?=?12.8?K, 16.3?K, and 17.2?K, respectively. Chemical and applied pressure both increase T(C) in a similar manner. The evolution of properties with chemical and applied pressure suggests that these phase diagrams may be connected in a Doniach-like picture where CeRu(2)Al(2)B is furthest from the possible quantum phase transition and CeRu(2)Ga(2)C is the nearest.     

Nanostructure and Phases Formation under Mechanical Alloying of Bynary Powder Mixtures of Fe and sp-Element (M); M = C,B,Al,Si,Ge,Sn

The processes of mechanical alloying of iron and sp-elements (C, B, Al, Si, Ge, Sn) under identical conditions of mechanical treatment have been studied. General regularities and differences in the mechanisms and kinetics of solid state reactions have been ascertained. A microscopic model of mechanical alloying in these systems is suggested.