Diode-pumped passively Q-switched and mode-locked Nd:YLF laser with Cr~(4+):YAG saturable absorber

A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4 :YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210μJ and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4 :YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 mW was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4 :YAG.     

High-repetition-rate 1.5 μm passively Q-switched Er:Yb:YAl_3(BO_3)_4 microchip laser

End-pumped by a 976 nm diode laser,a high-repetition-rate Er:Yb:YAl_3(BO_3)_4 microchip laser passively Q-switched by a Co~(2+):MgAl_2 O_4 crystal is reported.At a quasi-continuous-wave pump power of 20 W,a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz,pulse duration of 8.3 ns,and pulse energy of 3.9 μJ was obtained.To the best of our knowledge,the 544 kHz is the highest reported value for the 1.5 μm passively Q-switched pulse laser.In the continuous-wave pumping experiment,the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 μJ was obtained at the incident pump power of 6.3 W.     

Compact and efficient diode-pumped passively Q-switched Nd:GdVO_4 laser at 1.06μm

Diode-pumped passively Q-switched Nd:GdVO4/Cr4+:YAG lasers with a simple flat-flat cavity were demonstrated. The maximum average output power at 1.06 μm was 1.25 W. The highest peak power and pulse energy were 7.56 kW and 75μJ, respectively, with the pulse repetition rate of 11.1 kHz and pulse width of 10 ns at the incident pump power of 8 W.     

Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd：GGG Laser with a Codoped Nd,Cr：YAG Saturable Absorber

We demonstrate the first quasi-three-level passively Q-switched Nd：GGG laser at 937nm using a Nd, Cr：YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35kHz and pulse width of 45ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively.     

Q-switched mode-locked diode-pumped Nd:YVO_4 laser with a saturable Bragg reflector

We demonstrated a diode-pumped passively Q-switched mode-locked Nd:YVO4 laser by using a relaxed saturable Bragg reflector (SBR). Stable mode-locked pulse train with the repetition rate of -230 MHz was achieved and the pulse train was modulated by the Q-switched envelope with the repetition rate of -150 kHz. The maximum output of 4 W was obtained under the pump power of 13.5 W. The optical-to-optical efficiency was 30%. We also discussed the transition of each process having emerged.     

Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.     

Diode-Pumped Passive Q-Switched 946-nm Nd：YAG Laser with 2.1-W Average Output Power

We demonstrate a diode-pumped passive Q-switched 946nm Nd: YAG laser with a diffusion-bonded composite laser rod and a co-doped Nd, Cr:YAG as saturable absorber. The average output power of 2.1 W is generated at an incident pump power of 14.3 W. The peak power of the Q-switched pulse is 643 W with 80kHz repetition rate and 40.8 ns pulse width. The slope efficiency and optical conversion efficiency are 17.6% and 14.7%, respectively.     

LD-pumped passively Q-switched red laser at 660 nm

A laser diode (LD) pumped Nd:YAG red pulse laser at 660 mn was presented by V:YAG passively Q-switching and LBO intracavity frequency doubling. With 1.6-W incident pump power, average output power of 46-mW, pulse duration (FWHM) of 23.3 ns, pulse repetition rate of 21.6 kHz, peak power of 91.4 W, and single pulse energy of 2.13 μJ were obtained. The beam quality factor M2 was less than 1.2. The fluctuations of pulse energy and repetition rate were less than 3% in 4 hours. The pulsed laser at 660 nm is expected to be used as the pump source of Cr3+:doped crystal to obtain the gain-switched tunable laser.     

Passive mode locking of a Nd：YAG laser with co－doped Nd, Cr：YAG as saturable absorber

We demonstrate the characteristics of relatively low saturation intensity using co-doped Nd, Cr:YAG as saturable absorber for passively mode locking the Nd:YAG laser. The difference of the saturation intensity between Q-switched and mode-locked operation in co-doped Nd, Cr:YAG was only one to two orders of magnitude, while Cr:YAG was generally reported at a difference of five orders of magnitude. More than 80% mode locking modulation depth was achieved at an incident pump power of 4.4W, corresponding to an intracavity intensity of 6×10^4W/cm^2, using a 68cm long plano-concave cavity.     

High-Power Passively Q-Switched Nd:YAG Laser at 1112 nm with a Cr~(4+):YAG Saturable Absorber

A high-power passively Q-switched Nd:YAG laser operating at 1112 nm with Cr~(4+):YAG as a saturable absorber is demonstrated.Under 808 nm diode-direct pumping,the maximum average output power of 2.73 W is achieved at the pump power of 16.65 W,corresponding to an optical-to-optical conversion efficiency of 16.4%.At the same time,the pulse width,pulse repetition rate,single pulse energy and peak power are 27.2ns,9kHz,303.3μJ and11.2kW,respectively.As far as we know,the result gives the highest average output power at 1112 nm generated by an 808 nm diode-end-pumped Nd:YAG laser.     

铜铁镁三掺铌酸锂晶体的第一性原理研究

利用基于密度泛函理论的第一性原理,研究了Cu:Fe:Mg:LiNbO3晶体及对比组的电子结构和光学特性.研究显示,单掺铜或铁铌酸锂晶体的杂质能级分别由Cu 3d轨道或Fe 3d轨道贡献,禁带宽度分别为3.45和3.42 eV;铜、铁共掺铌酸锂晶体杂质能级由Cu和Fe的3d轨道共同贡献,禁带宽度为3.24 eV,吸收峰分别在3.01,2.53和1.36 eV处;Cu:Fe:Mg:LiNbO3晶体中Mg^2+浓度低于阈值或高于阈值(阈值约为6.0 mol%)的禁带宽度分别为2.89 eV或3.30 eV,吸收峰分别位于2.45 eV,1.89 eV或2.89 eV,2.59 eV,2.24 eV.Mg^2+浓度高于阈值,会使吸收边较低于阈值情况红移;并使得部分Fe^3+占Nb位,引起晶体场改变,从而改变吸收峰位置和强度.双光存储应用中可选取2.9 eV作为擦除光,2.5 eV作为读取和写入光,选取Mg^2+浓度达到阈值的三掺晶体在增加动态范围和灵敏度等参量以及优化再现图像的质量等方面更具优势.     

Acoustic cavitation series: part one: Acoustic cavitation: an introduction

Acoustic cavitation has been an active area of research for at least 30 years and interest in the subject shows no sign of diminishing. Cavitation may occur whenever high intensity ultrasound is applied to liquids, for example in such important applications as sonar, industrial processing and bio-medical research. Future issues will carry a series of articles reviewing the physics and technology of acoustic cavitation, each contributed by a well-known specialist. The present introductory article is a preface to the series, covering background history, explaining the scope of the subject and defining terms in common use. Also included is a list of the major sources of reference presently available, in the form of books, reviews and collections of papers.     

The radiothermoluminescence of (ZnS:CdS:Ag:Ni:Co) phosphors irradiated with beta-rays

The radiothermoluminescence characteristics have been studied for a number of (ZnS:CdS::Ag:Ni:Co) phosphors, with various cobalt impurity contents, after exposure to⁹⁰Sr beta-rays at room temperature. Thermoluminescent spectra show a peak wavelength of 7000 Å, which remains unchanged with increase in cobalt concentration. Thermoluminescence curves exhibit a single well-defined peak appearing at temperatures far above room temperature. This peak shifts to lower temperatures with increasing cobalt content. The relation between thermoluminescence response and dose is linear over the dose range of 1 to 500 rads. Thermoluminescence measurements made after storing the irradiated phosphor for 48 hours in dark have revealed an information loss of 4% over this storage period. The radiothermoluminescence characteristics, storage capacity and storage stability of these sulphide phosphors compete reasonably with those of lithium fluoride over the dose range of 1 rad to 500 rads.     

Fourier transform profilometry: : a review

Fourier transform profilometry is one of the popular non-contact 3-D measurement methods, where a Ronchi grating or sinusoidal grating is projected onto a diffuse three-dimensional surface, and the resulting deformed grating image is detected by a CCD camera and processed by a computer. This method requires only one frame (or two frames) of the deformed fringe pattern in some algorithms to retrieve the surface of measured object, so it has obvious advantage for real time data acquisition and 3-D measurement of dynamic process. In this paper, we review some algorithms in FTP, discuss some important problems, including frequency spectra overlapping, phase unwrapping, sampling, and 3-D measurement of dynamic process. With the development of computer hardware and software and availability of high-resolution image grabber, FTP method will be a promising one for acquiring 3-D data of object, and more and more researchers pay attention to it.     

LiNbO_3:In:Fe:Cu晶体中的双波长非易失存储

为了提高晶体的非易失存储性能,采用双波长存储技术实验研究了LiNbO3:In:Fe:Cu晶体中的非易失存储,折射率调制度为1.04×10-4,记录灵敏度达到0.965 cm/J.与传统的双色非易失记录相比,该方法大幅度地提高了光栅的强度和记录的灵敏度.利用Kukhtarev带输运模型对双波长非易失记录过程中光栅的动态演化过程进行了数值模拟,同时讨论了氧化还原程度对双波长非易失全息记录的影响.理论与实验符合的较好.     

Er:YCOB和Er:Yb:YCOB晶体的光谱分析

分别测量了Er YCOB晶体和ErYb YCOB晶体的室温吸收光谱.讨论了Yb3+离子对Er3+离子的敏化作用.     

Laser phenomena in DCEL of ZnS:Cu:Nd:Cl thin films

The possibility of the occurrence of laser phenomena in the DCEL of thin films of ZnS:Cu:Nd:Cl, designed for display purposes, has been investigated. Evidence of stimulated emission at ～ 1080 nm has been found in both DCEL and cathodoluminescence emission of the films and has been attributed to a tendency to population inversion involving the ${}^4\text{F}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}$ energy level and a sub-level of the ${}^4\text{I}{}_{\mathrm{<mtext>11</mtext><mtext>2</mtext>}}$ energy level. In addition, the expected directional nature of the stimulated emission has been shown to be present at the higher applied voltages.