The effect of adsorbed impurities on the surface properties of GaAs and the characteristics of electroluminescent p-n junctions

The effect of adsorbed copper and gold on the band bending, the steady-state photoconductivity, and the field-effect mobility in n-type GaA s has been studied. The light and electrical characteristics of electroluminescent p-n junctions have also been studied. It is shown that doping the GaA s surface with Cu and Au leads to an increase of the depleting band bending and to a decrease in the field-effect mobility. Copper, adsorbed at the surface of slices before diffusion, leads to a reduction of the radiative intensity of the p-junctions prepared on GaA s with an electron concentration of 1–6·10¹⁷ cm^–3, to a decrease in the cutoff voltage, and to an increase in the differential resistance of the forward branch of the volt-ampere characteristics. It is proposed that in the region of the experimental current (5·10^–2-10^–2) mA the presence of Cu in the electroluminescent p-n junctions leads not to a change in the injection mechanism but to an increase in the series resistance of the p-n junction.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 72–77, December, 1973.     

Effect of deep dislocation levels in silicon on the properties of p-n junctions

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10^–7 sec to 3 · 10^–8 sec when the dislocation density N_d varies from 10⁷ cm^–2 to 5 · 10³ cm^–2. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N_d. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 81–84, January, 1988.     

Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

The basic characteristics of annealing of implanted layers of A^II-B^VI compounds are studied. The equilibrium, quasiequilibrium, and nonequilibrium methods of annealing were employed. Equilibrium annealing was conducted in the saturated vapor of the metalloid at temperatures below the critical temperature, above which intense self-compensation processes start (T_cr 450–500°C for ZnS and ZnSe). If T_ann must be higher than T_cr owing to radiation-induced damage that is difficult to anneal, than the method of annealing under an active protective film was employed. For ZnSe and ZnS with an implanted acceptor impurity the protective film consisted of gold or silver sputtered on the crystal prior to annealing. Thus implantation of ions enabled obtaining layers of p-type ZnS with resistivities of 10²–10³ ·cm. The ZnSe layers with hole conductivity were also obtained with electron annealing under a protective gold film with weak-current beams with durations of several seconds. Quasiequilibrium annealing was conducted in the activated vapor of the metalloid. The vapor was activated by a high-frequency discharge in the vapor of the metalloid. This method of annealing gave sharp p-n junctions on implanted ZnSe. Pulsed electron beams were employed for nonequilibrium annealing.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 51–56, March, 1989.     

Prebreakdown condition in selenium rectifiers

This paper reports data from an experimental investigation of the prebreakdown and breakdown conditions of factory production selenium rectifiers in the temperature range from 100 ° to –196 ° C when a unit voltage pulse with steep leading edge (rise time about 10^–8 sec) is applied to the rectifier in the non-conducting direction. Change in voltage across the rectifier and in current through it were recorded by a two-channel high-speed electronic oscilloscope. On the basis of this test data, the variation of discharge rise-time in the selenium p-n junction as a function of overvoltage and temperature was determined, the formation of current pulses was detected in the junction, both before and during breakdown in the temperature range from 100 ° to –196 ° C, and it was also established that breakdowns of selenium rectifier p-n junctions are due to joint action of the Zener effect and impact ionization.We are indebted to Prof. Kh. I. Amirkhanov for his constant interest in this work.     

Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

A study is made of the electrophysical properties (N_s, _eff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·10¹³–10¹⁶ ions/cm²; the alloys were subsequently annealed for 10 min in an H₂ atmosphere with temperatures in the range 500–1000°C. The optimal parameters of the ionic alloys are obtained for T_i=300°C and T_a=700°C. Thermal acceptance of the GaAs under a SiO₂ film (d0.2–0.3 m) is observed for T_a>700°C. The limiting concentration of thermal acceptors N_s(TA)3·10¹³ cm^–2) for T=1000°C and t=10 min.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 22–26, March, 1979.     

Investigation of the Fiban K-1 Sulfocationite by the IR Spectroscopy Method

Using the IR spectroscopy method, we have studied the state of water, sulfogroups, and adsorbed methanol in a Fiban K-1 fibrous cationite under different conditions of preparation of a sample. It is shown that on an air-dried cationite protonation of methanol is performed by the ionic pair [(H_2n+1O _n )⁺·SO₃ ^–] after vacuum treatment at 20°C and by the ionic pair [H⁺·SO₃ ^–] after vacuum treatment at 90°C.     

Temperature-dependent change in the nature of glass fracture under electron bombardment

We report the experimental discovery of a temperature-dependent change in the nature of glass fracture under low-energy (<10 keV) electron bombardment. This is shown to depend on the transition from the thermal-shock to the thermalfluctuation mechanism of fracture at the limiting temperature T₁ = (T_g – 150) °C. The high-temperature cleavage fracture of K8 and TF1 glasses was studied and the threshold value of the critical power initiating cleavage fracture was determined (for the glasses studied _thr = 50–70 W·sec·cm^–2).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 14–16, April, 1991.     

Positron annihilation and Hall effect in electron irradiatedn-InP crystals

Positron annihilation and Hall effect inn-InP crystals as a function of electron irradiation up to 1 · 10¹⁹ cm^–2 and post-irradiated isochronal annealing up to 550 °C have been studied. It is concluded that in irradiatedn-InP samples positrons interact with negatively charged acceptor-type defect with level atE _c –0.33 eV, probablyV _In (primary defect). In post-irradiated isochronal annealed (up to 330 °C) samples ofn-InP positron trapping occurs preferably in secondary defects-vacancy clusters, which are formed in the temperature range (150–300 °C). Inn-InP crystals containing radiation induced defects the trapping rate was found to decrease with temperature in the range (300–77) K.     

Synthesis and photocatalytic property of ZnSe flowerlike hierarchical structure

Spherical flowerlike hierarchical structure of ZnSe(en)_0.5 was synthesized via a solvothermal route in the NH₃·H₂O-ethylenediamine (en)-N₂H₄·H₂O system at 180 °C for 24 h. The hierarchical structure is assembled from lots of regular nanosheets. The ZnSe(en)_0.5 was further converted into pure hexagonal ZnSe by annealing in a flowing nitrogen gas at 500 °C for 1 h with morphology preserved. The formation mechanism of ZnSe was discussed. The UV-visible absorption spectrum and PL spectrum of the ZnSe spherical flowerlike hierarchical structure were measured. In addition, photocatalytic activity of the ZnSe flowerlike structure for the degradation of methyl orange under the irradiation of the simulated sunlight was investigated. The excellent catalytic activity for the degradation of methyl orange was found and the possible mechanism of the photocatalytic activity is also proposed.     

Ionic Synthesis of Ga1–x In x As Solid Solution Films

The Ga_1–x In _x As compound obtained by In-ion implantation (100 keV and (0.45–6)·10¹⁷ cm^–2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm^–2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor photoelectromotive force. It is shown that x increases from 0.07 up to 0.21, and the band gap decreases from 1.34 down to 1.21 eV as the implantation dose increases. The surface potential decreases from 0.79 down to 0.58 V. A high efficiency of electron-beam annealing is pointed out.     

Influence of growth conditions on the structural,optical, and electrical properties of ZnSe films

ZnSe films were grown by chemical vapour deposition on GaAs substrates. The influence of the source temperature (between 820 and 900° C) and the substrate temperature (between 620 and 790° C) on the film properties were investigated by Hall measurements, X-ray diffraction, and photoluminescence. With respect to blue luminescent devices the ratio of excitonic to deep level transitions was found to be optimum at low growth rates when the source temperatures were kept below 840° C. P-type conduction up to a net carrier concentration of 8×10¹⁸ cm^–3 could be obtained by substrate temperatures above 700° C. Lattice contraction versus substrate temperature pointed to a reduced incorporation of donors at higher growth temperatures.     

Fluctuation analysis of the29Si (d,p)30Si reaction at 1.1–2.1 MeV

The excitation functions of the²⁹Si(d, p)³⁰Si reaction in the deuteron energy range of 1·1–2·1 MeV have been measured in steps of 9.3 keV at angles 40°, 60°, 90°, 100°, 110°, 130° and 150° for the following groups of protons: p_o (g.s. of the³⁰Si nucleus), p₁ (2·23 MeV), p₂ (3·51 MeV), p_3,4 (3·77 and 3·79 MeV), p_5,6 (4·81 and 4·83 MeV), p₁₀ (5·48 MeV) and p_n (5.61 MeV). Within the framework of Ericson's theory of statistical fluctuations the autocorrelations, cross-angle correlations and cross-group correlations have been calculated and the mean coherence width of the³¹P compound nucleus has been deduced to be 27 keV.The authors would like to express their thanks to K. Putz for the efficient performance of the electronical equipment and to the staff of the Van de Graaff laboratory for operating the accelerator.     

Electrical properties and structure of thin chromium films

The temperature dependence of the electrical resistance of thin chromium films produced by vacuum condensation at 1· 10^–4 mm Hg on mica, optical glass, and rock salt substrates is considered. The electrical resistance of chromium films condensed on substrates heated to temperatures below 450 °C increases irreversibly on subsequent heating and cooling. Chromium films condensed on substrates heated to 500–600 °C, however, retain stable electrical properties on repeatedly heating and cooling.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 56–60, September, 1971.     

Charge Exchange of the Centers in Electron–Irradiated Zinc Selenide

The optical absorption induced by the photosensitive centers formed upon electron irradiation (E = 5 MeV, = 1.7·10¹⁸ cm^–2) of polycrystalline ZnSe has been studied. A comparison of the optical properties of the irradiated crystals with the known data for ZnS has allowed the assumption that the 496–, 563–, and 652–nm bands in ZnSe are associated with the anion vacancies being in different charge states. The ratio between the concentrations of the optical absorption centers in the crystals photoexcited at 80 K is determined by the electron traps participating in the processes of charge exchange of the vacancies.     

Temperature dependence of IR band strength for polyethylene

IR spectra at 150° K and detailed temperature curves for 150–310° K for the 965, 985, 1175, 1890, and 2010 cm^–1 bands are reported. The background bears a direct relation to temperature, whereas the bands have a negative temperature coefficient of intensity. The weakening of the 944 cm^–1 band is irreversible.     

Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2

It is shown that in the forbidden band of the plasmochemical SiO₂ there are electron capture centers with capture cross section 2·10^–13cm², density 2·10¹⁹ cm^–3, and thermal activation energy 0.41 eV for the process of trap emptying. It is noted that the charge state of the insulator in an external electric field is unstable, this being due to the exchange of electrons between the insulator and the aluminum electrode. An energy band diagram of the structure is deduced from the results of the investigation. The potential barrier heights were found to be 2.78 eV at the Al-SiO₂ interface and 4.36 eV at the SiO₂-Si interface. The dynamical current-voltage characteristic of the structure is used to determine the density of mobile ions in the insulator, which is found to be S·10¹³ cm^–2 at T=230°C and rate of change 5 mV/sec of the voltage.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 61–66, January, 1981.     

The decomposition pressure,congruent melting point and electrical resistivity of cerium nitride

The melting point of CeN in nitrogen was determined at pressures between 10⁻² and 21 atmospheres. Congruent melting was observed at T = 2575 ± 20°C and P = 5 ± 1 atmospheres. With lower nitrogen pressures, the melting point was related to the applied (or decomposition) pressure by the equation log P_atmos(N₂) = 18·5 − 5·1 × 10⁴/T. The electrical resistivities of samples prepared from these melts were measured at temperatures between 150–900°K. The room temperature resistivity of congruently melted samples was 21 μΩ-cm, which may be compared with the value of 75 μΩ-cm for cerium metal at this temperature. These samples had a positive (metallic) temperature dependence of resistivity of 0·11 μΩ-cm/°C at room temperature and increased with temperature to a value of 0·22 μΩ-cm/°C at a temperature of 700°K. The noncongruently melted samples had a similar behavior, but with somewhat higher values of resistivity. The room temperature Seebeck coefficients for both types of samples were approximately + 5 μV/°C, relative to platinum.     

The anomalous relation of dielectric parameters to temperature for liquid nitrobenzene

Dielectric parameters are reported for pure nitrobenzene and dilute solutions in the microwave and radio-frequency ranges, together with the refractive index as a function of temperature at 6–45 °C. The dielectric parameters show marked anomalies at 11.28 and 34 °C on account of changes in the configuration of molecular assemblies. The most probable relaxation time is found to be 2.3 · 10^–11 sec and the critical wavelength 4.3 cm, the dielectric loss ⁿ then being maximal.     

Rates of change in high temperature electrical resistivity and oxygen diffusion coefficient in Ba2YCu3Ox

The change in electrical resistance with time for bulk, thick-film, and thin-film Ba₂YCu₃O_x at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1m film at 600° C, <1 s for the range of P_O2 (O2 being a shorthand for O₂) from 100% to 0.001%. The rate increases markedly with increasing P_O2. The actual resistance decreases with P_O2 at a rate of log/log P_O2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10^–11–1·10^–12 cm²/s in the 435°–320° C range, with an activation energy of 27 kcal/mole.     

Synthesis of anatase-type TiO2 films by reactive laser ablation of a metallic Ti target in ambient O2 gas

TiO₂ films having anatase-type crystal structures were synthesized by reactive laser ablation of a metallic Ti target in ambient O₂ gas. The anatase-type TiO₂ was obtained at O₂ pressures below 0.2 Torr and at substrate temperatures above 150 °C. The films had the (101) orientation at substrate temperatures of 200–250 °C while, at substrate temperatures of 400–450 °C, the orientation of the films was (004). Rutile-type crystal was mixed in at substrate temperatures higher than 450 °C. The synthesis characteristics were compared with the fluxes of Ti, Ti⁺, and TiO toward the substrate, which were evaluated by laser-induced fluorescence imaging spectroscopy. PACS 81.15.Fg; 61.10.-i; 52.70.Kz