Prebreakdown condition in selenium rectifiers

This paper reports data from an experimental investigation of the prebreakdown and breakdown conditions of factory production selenium rectifiers in the temperature range from 100 ° to –196 ° C when a unit voltage pulse with steep leading edge (rise time about 10^–8 sec) is applied to the rectifier in the non-conducting direction. Change in voltage across the rectifier and in current through it were recorded by a two-channel high-speed electronic oscilloscope. On the basis of this test data, the variation of discharge rise-time in the selenium p-n junction as a function of overvoltage and temperature was determined, the formation of current pulses was detected in the junction, both before and during breakdown in the temperature range from 100 ° to –196 ° C, and it was also established that breakdowns of selenium rectifier p-n junctions are due to joint action of the Zener effect and impact ionization.We are indebted to Prof. Kh. I. Amirkhanov for his constant interest in this work.