Cathodoluminescence from deformed doped MgO crystals

The cathodoluminescence (CL) from indented Fe doped MgO single crystals has been studied with the scanning electron microscope and the results have been compared with the CL from undoped crystals. As in the undoped crystals, the iron doped crystals show in the deformed regions an enhanced luminescence emission but it has been found that iron acts as a quencher of luminescence. The results indicate that in the blue emission of the deformed crystals there is not a noticeable contribution of iron. From the evolution of CL with the irradiation time in the electron microscope it is concluded that the total Fe content influences the CL emission more than the Fe³⁺ content.     

Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed     

阴极荧光在表面等离激元研究领域的应用

表面等离激元以其独特的光学性质广泛应用于纳米尺度的局域电磁场增强、超高分辨成像及微弱光电探测.阴极荧光是电子与物质相互作用而产生的光学响应,利用电子束激发金属纳米结构能够实现局域等离激元共振,并在亚波长尺度实现对共振模式的调控,具有超高空间分辨的成像特点.阴极荧光探测通常结合扫描电子显微镜或透射电子显微镜而实现,目前己被应用于表面等离激元的探测及共振模式的分析.本文从阴极荧光物理机理出发,综述了单一金属纳米结构和金属耦合结构的等离激元共振模式阴极荧光研究进展,并总结了阴极荧光与角分辨、时间分辨以及电子能量损失谱等关键技术相结合的应用,进一步分析了其面临的关键问题,最后展望了阴极荧光等离激元研究方向.     

高温氧化多孔硅的电子束辐照效应

通过高温氧化处理得到的多孔硅,其阴极射线发光谱呈现明显的三峰结构。峰强随电子束辐照时间而下降。对光致发光很弱的样品,电子束辐照后光致发光明显地增强。红外透射谱及Raman谱分析表明样品基本上成为SiO_x.进一步分析指出三峰可能来源于SiO_x中的缺陷中心发光。电子束辐照在SiO_x禁带中引进了一些缺陷能级,通过这些能级使得紫外线可激发样品发光,出现光致发光增强的现象。     

Influence of electron-beam irradiation in SEM on the cathodoluminescence and electron-beam-induced current in InGaN/GaN light-emitting diodes with a buried active region

The influence of irradiation in a scanning electron microscope on the optical properties inherent to light-emitting diodes (LEDs) with multiple InGaN/GaN quantum wells, assembled by means of the flip-chip mounting technique, has been investigated via the cathodoluminescence (CL) and electron-beam-induced current methods. It is demonstrated that the action of an electron beam qualitatively varies both these LEDs and structures with a thin upper GaN layer only at large beam energies. It has been revealed that irradiation not only leads to changes in the spectrum and intensity of CL but also decreases the energy corresponding to the excitation of emission associated with quantum wells. A similar effect is also observed in structures whose external quantum efficiency has been decreased several times due to long-running tests performed at an injection current density of 35 A/cm² and a temperature of 100°C.     

Cathodoluminescence mapping and spectroscopy of Te-doped InxGa1−xSb grown by the vertical Bridgman method under an alternating magnetic field

Cathodoluminescence (CL) in the scanning electron microscope and wavelength dispersive X-ray microanalysis (WDX) have been used to assess the homogeneity of a whole Te-doped In_xGa_1?xSb ingot grown by the vertical Bridgman method under an alternating magnetic field. In particular, WDX has been used to determine the chemical composition of the ingot along the growth axis and several radial directions, while CL has been used to investigate the effective incorporation of In into the alloy, the nature and distribution of extended defects influencing the luminescence of the material and the shape evolution of the growth interfaces along the growth axis. CL spectroscopy reveals that doping with Te influences the band gap energy of this ternary compound through the Moss–Burstein effect.     

Radiation-induced cathodoluminescent signatures in calcite

At ambient temperatures, a permanent change due to neutron irradiation has been identified in the luminescent properties of the common mineral calcite. Calcite is one of many ubiquitous minerals that are known to exhibit luminescence under electron bombardment, a process known as cathodoluminescence (CL). The UV–Visible spectra of individual calcite grains were measured with CL spectroscopy before and after neutron irradiation. Exposure to neutrons causes additional crystal lattice defects (beyond those naturally-occurring) that leave a permanent, readily-measurable CL signature in the 515 nm region of the spectrum. Dose response results following irradiation have been measured and a spectroscopic signature is described that increases proportionately to neutron dose. The CL measurements are complicated by a dependence on the orientation relative to direction of excitation. When taken into account, the total dose to the crystal can be estimated, and possibly even the direction of the neutron source can be determined. This signature could potentially be developed into a nuclear forensics tool to help identify locations where special nuclear materials have been stored.     

Electron-irradiation-induced radiolytic oxygen generation and microsegregation in silicon dioxide polymorphs

The first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and microscopy). Previously unreported near-infrared CL emission is observed at 0.968+/-0.003 eV from crystal alpha-SiO2 (quartz) and at 0.971+/-0.003 eV from amorphous a-SiO2 (fused quartz and silica glasses) at 290 K. The energy and width of the near-infrared CL emission from electron-irradiated alpha-SiO2 polymorphs is consistent with the O2 (1)Delta(g)-->(3)Sigma(-)(g) transition associated with molecular oxygen.     

用阴极发光显微术研究YAG:Nd~(3+)晶体中的缺陷

采用扫描电子显微镜中的阴极发光显微术获得了YAG:Nd~(3+)激光晶体中不同缺陷所形成的显微发光图象。据此进一步分析了这些缺陷的形成机制及其对材料性能的影响。     

Scattering behaviours to the two-dimensional electron gasinduced by the Al composition fluctuation in AlxGa1-xNbarrier in AlxGa1-xN/GaN heterostructures

<正>This paper reports that cathodoluminescence（CL） measurements have been done to study the alloy fluctuation of the Al_0.3Ga_0.7N layer in Al_0.3Ga_0.7N/GaN heterostructures.The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al_0.3Ga_0.7N barrier.A model using aδ-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases （2DEG） induced by Al composition fluctuation.Two factors,including conduction band fluctuation and polarization electric field variation,induced by the Al composition fluctuation have been taken into account.The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns,respectively,indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Al fluctuation.     

Structural and cathodoluminescence assessment of transition metal oxide nanostructures grown by thermal deposition methods

Nanostructures of two transition metal oxides, WO₃ and α-Fe₂O₃, have been grown by a thermal deposition method without a catalyst and characterized by x-ray diffraction, scanning electron microscopy (SEM), high-resolution transmission electron microscopy and cathodoluminescence (CL) in the SEM. WO₃ micro and nanorods exhibit CL emission two orders of magnitude higher than CL intensity from the untreated oxide. α-Fe₂O₃ nanostructures with different morphologies (wires, belts, rods, urchins) were grown at different temperatures on Fe substrates. CL spectra of these nanostructures show emission bands related to charge transfer and ligand field transitions.     

Tuning the cathodoluminescence of porous silicon films

We have obtained intense cathodoluminescence (CL) emission from electron beam modified porous silicon films by excitation with electrons with kinetic energies below 2 keV. Two types of CL emissions were observed, a stable one and a non-stable one. The first type is obtained in well-oxidized samples and is characterized by a spectral peak that is red shifted with respect to the photoluminescence (PL) peak. The physically interesting and technologically promising CL is however the CL that correlates closely with the PL. Tuning of this CL emission was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. We also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the PL that follows the electron irradiation.     

Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence

Cathodoluminescence (CL) in scanning electron microscopy (SEM) is commonly accepted as revealing local properties of a specimen region illuminated by an electron beam. CL is widely used to visualize defects in semiconductor structures. However, the presence of a strong electric field in, for example, heterojunctions or p–n junctions causes a separation of generated electron–hole (e–h) pairs and suppresses recombination in the specimen region excited by the beam. As a result CL – a radiative recombination – becomes quenched. At the same time, electron beam-induced current (EBIC) flows throughout the structure, which may produce secondary electroluminescence that is registered by the CL detector. Consequently, the CL measurement is distorted and if there are defects in the structure, they remain unrevealed. The current study shows that registration of the CL signal for different values of electron beam current (including high ones) enables true defect detection in semiconductor layers with built-in electric field. Results for a special test structure prepared with focused ion beam on AlGaAs/GaAs laser heterostructures with an 8 nm InGaAs quantum well are presented.     

Electron beam induced structural changes in Bi2Sr2CaCu2O8+x studied by cathodoluminescence microscopy and secondary electron emission

2 Sr₂CaCu₂O_8+x superconducting ceramics have been irradiated in the scanning electron microscope (SEM), and the irradiation-induced effects investigated by cathodoluminescence (CL), secondary electron emission (SEE) and X-ray microanalysis. Electron beam irradiation causes a slight Bi depletion and an inhomogeneous Ca distribution. A higher CL intensity emission is found in the irradiated areas, where besides an enhancement of the oxygen content related 2. 4 eV band, another CL bands probably related to new non-superconducting phases induced by irradiation can be observed. SEE yield measurements allow to detect an oxygen depleted region surrounding the irradiated areas. X-ray microanalysis shows that this intermediate region retains the cationic composition of the unaffected material. CL spectra from bright zones inside the same area also show a dominant 2. 4 eV emission band, which supports its relation with oxygen deficiency or rearrangement in high- superconductors. Received: 30 July 1996/Accepted: 8 October 1996     

有机化合物对Luminol-KIO4-H2O2体系化学发光的抑制和增强

研究了36种有机化合物对鲁米诺-高碘酸钾-过氧化氢(luminol-KIO₄-H₂O₂)体系化学发光的影响,发现其大部分能抑制或增强体系化学发光强度,并且抑制或增强化学发光强度的能力与化学发光体系的pH值以及有机化合物分子结构中芳香环上功能基(—OH和—NH₂)的数目、位置,取代基的电子效应、空间效应等有关。讨论了化学发光强度抑制或增强的机理。基于24种有机化合物对体系化学发光的抑制或增强考察了其分析应用的可能性,发现数个化合物的检测限可达ng·mL^-1水平。     

Characterization of zirconia/mullite ceramics by cathodoluminescence technique

Characterization of mullite-ZrO₂ ceramics by Cathodoluminescence (CL) technique has been made. The analyses of the CL emission show complex spectra with broad and sharp bands. An attempt has been carried out to relate these bands to the main constitutive phases in the samples. Spatial distribution of the CL is found to be inhomogeneous.     

Dependence of optical properties on specific surface area and grain sizes in TiO2 powders

The diffuse reflectance (DR) spectra and the cathodoluminescence (CL) spectra in the range 0.34–2.10 μm and changes in the spectra after bombardment by accelerated electrons have been studied as a function of the specific surface area and the grain sizes of titanium dioxide (rutile) powders of different grades (P1, P2, P02, R10). It has been established that the diffuse reflection coefficient and the luminescence band intensity increase as the specific surface area decreases and the grain size of the powder increases. A smaller specific surface area of the powders means lesser initial flareup and subsequent “quenching” of the CL bands as a function of electron fluence. It has been shown that history-related differences between powders of different grades is a less significant factor than the specific surface area in determining the diffuse reflectance and luminescence and also the radiation resistance of the powders. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 73–77, January–February, 2006.     

Enhanced biological cathodoluminescence

We have combined the specificity of antibody labeling, the power of fluorescence detection, and the resolution of scanning electron microscopy (SEM) to identify antigenic sites on nanometer-scale features of mammalian cells. Cathodoluminescence (CL) detection in SEM was used to locate fluorophores bound to antibodies specific for cell surface epitopes. Sample preparation and instrument setup were optimized to yield the maximum luminescence compatible with a high definition secondary electron image. Separable CL component distances of less than 300 nm have been calculated. Antibody-specific fluorophores are associated with unique morphological features on a human dendritic cell. This technology provides a tool to identify the relationship between cell surface structures and receptor-ligand binding or other antigen-defined physiological states.     

Cathodoluminescence investigations of RIE-induced defects in InP

Cathodoluminescence (CL) measurements have been performed to characterize defects in InP created by reactive ion etching (RIE) in a CH₄/H₂/Ar plasma. Etching of semi-insulating InP:Fe leads to an increase of CL intensity. After etching of undoped, n-type InP a reduction of band-edge as well as band-acceptor/donor-acceptor-pair emission intensity is detected. No additional emission lines due to etching-induced defects have been detected in the spectral range examined. After a few minutes of electron beam injection the band-edge luminescence recovers to its initial value. Using donor-bound exciton emission, which is especially affected by RIE, mapping of these defects is possible, showing homogeneous defect distribution. In conjunction with other measurements (conductivity, photoluminescence, electron-beam-induced current, Raman scattering, Auger electron spectroscopy depth profiling) these results indicate a nonradiative, donor-like defect created by RIE.     

Effect of oxidizing anneals on thermochemically reduced MgO:Ni crystals

Oxidizing anneals have been carried out to test the stability of nickel precipitates previously formed in MgO:Ni by thermochemical reduction. The annealed crystals have been examined by transmission electron microscopy (TEM) and cathodoluminescence (CL). Both techniques, TEM and CL, reveal that the nickel precipitates become unstable under oxidizing annealing at temperatures 1223 K for 30 min. Cathodoluminescence results are analyzed on the basis of anion vacancy complexes and Ni²⁺ transitions.