White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm². The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.     

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

色坐标对白光LED光通量的影响

研究了在蓝光芯片加黄色荧光粉制备白光LED方法中,色坐标位置对光通量的影响。在同样蓝光功率条件下,我们对标准白光点(色坐标x=0.33±0.05,y=0.33±0.05)附近不同色坐标位置的光通量进行了计算。假设(0.325,0.332)位置流明效率为100 lm/W,计算得出,最大光通量对应的色坐标位置为(0.35,0.38),光通量为112 lm;最小光通量对应的色坐标位置为(0.29,0.28),光通量为93.5 lm。相对于100 lm的变化幅度达到18.5%。通过与实验数据的对比和分析,进一步验证了白光LED光通量随色坐标增大而增加的这一趋势。     

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研究了无汞等离子体平板荧光光源的气压、气隙、气体组成、光源结构及荧光粉加工对光源发光效率的影响。通过优化,光源的发光效率显著提高。实验结果表明,在450Torr、纯氙气、气体间隙0.7mm、前板玻璃厚为2.8mm,在前板采用60%浓度荧光粉图案印刷获得约20μm厚荧光粉层时,尺寸130mm×90mm的等离子体平板光源的发光效率和亮度超过40lm•w-1、11000cd•m-2,光通量超过500lm。通过优化,获得了较高的亮度和较高的发光效率,讨论了各影响因素引起光源发光效率变化的原因。     

Study of UV excited white light‐emitting diodes for optimization of luminous efficiency and color rendering index

Wavelength down‐converted white‐light sources excited by near ultraviolet light‐emitting diodes require specific phosphor properties in order to generate high‐quality white light (namely, light with good color rendition and stability of color coordinate). Simulation and experimental results are discussed, with particular emphasis on the spectral distribution property of red phosphor required to realize high values of luminous efficiency and color rendition. A peak wavelength of 610 nm and an FWHM of 80 nm for the spectral power distribution were proposed, and co‐doped phosphate materials were synthesized successfully. This can contribute to a white‐light source with a luminous efficiency of 45 lm/W and color rendering index greater than 90 at a color temperature of 5600 K and an operational current of 20 mA. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

双层荧光粉涂覆对COB封装LED出光的影响

为了提高LED出光量，基于传统的荧光粉涂覆设计了一种双层荧光粉涂覆结构。通过对上下涂覆层浓度及上层涂覆量的研究，探究双层涂覆结构对COB封装LED出光的影响。结果表明在通电电流为440 mA时，可在实验中实现15 W的COB封装结构的白光LED:涂覆单一黄色荧光粉，上下层胶粉比为14.2～28且上层涂覆体积为下层的0.8倍时，COB封装LED的光通量为2 179 lm，光效可达145.3 lm/W，显指为63，出光量最大提升为7.82%；荧光粉调整为黄绿粉和红粉的配合使用后，最终实现色温、光效及显指分别为4 854 K、129.7 lm/W和81.2。因此，双层荧光粉涂覆结构可以提高COB封装LED的光学性能，对实际生产有一定的应用价值。     

半导体激光激发荧光粉转换白光照明系统设计

单管蓝光半导体激光器功率相对较低,为了获得高功率激光,利用多单管光纤耦合技术实现10 W蓝光激光输出,输出的激光激发荧光粉片合成的白光光源作为汽车远光灯光源。根据汽车照明法规要求设计了汽车远光灯照明系统并详述了抛物面反光罩、双凹透镜和荧光粉片的光学结构及对反光罩曲线参数、双凹透镜和荧光粉片的放置位置对光源色温均匀性及照度的影响。模拟设计了顶端19 mm×31.6 mm椭圆形开孔、底部直径5 mm圆形开孔、高60 mm的椭圆抛物面反光罩,荧光粉片置于距反光罩底部15 mm处时,在距光源25 m处的接收面上得到了5 m×12 m的椭圆光斑,白光光源的光通量为1 025 lm,中心色温为5 880 K,中心色坐标为(x=0.322 6,y=0.369 2),该汽车远光灯照明系统满足汽车照明法规要求。     

白光LED极限流明效率的计算

对蓝光芯片加黄色荧光粉制备白光LED方法的流明效率进行了理论计算。根据光度学原理,我们考虑到视觉函数V(λ)的修正,以色坐标为x=0.325,y=0.332,显色指数为81.5,色温为5 914 K的白光LED发光光谱为依据,计算了白光LED流明效率的理论极限:得出每瓦白光LED辐射光功率产生的光通量为298.7 lm,白光LED发射的总光子数为2.7×10¹⁸。在理想情况下,注入一个电子-孔穴对产生一个蓝光光子,设荧光粉的量子效率为1,因此,注入的电子-孔穴对数亦等于白光光子数,进而计算出白光LED每辐射1 W的光功率所需的电功率为1.51 W,上述白光LED发光光谱对应的白光LED的电-光转换的理论极限流明效率为197.8 lm/W。     

Concentration quenching of Eu2+ in a thermal-stable yellow phosphor Ca2BO3Cl:Eu2+ for LED application

A piece-shaped phosphor Ca₂BO₃Cl: Eu²⁺ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T_1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.     

White light emitting diodes (LEDs) with good color rendering indices (CRI) and high luminous efficiencies by the encapsulation of mixed and double-deck phosphors

In this paper, white light emitting diodes (LEDs) with good color rendering indices (CRI) and high luminous efficiencies have been fabricated by the encapsulation of mixed and double-deck phosphors. Experimental results revealed that white LEDs with the encapsulation of double-deck phosphors exhibited better CRI and higher luminous efficiencies than those with the encapsulation of mixed phosphors because no secondary excitation took place. The hue, CRI, and luminous efficiencies of white LEDs with double-deck phosphors under 200 mA were CIE_x,y = (0.357, 0.348), 90, and 62.3 lm/W, respectively while the hue, CRI, and luminous efficiencies of white LEDs with mixed phosphors under 200 mA were CIE_x,y = (0.366, 0.354), 89, and 56.5 lm/W, respectively.     

中性色温下两基色、三基色荧光粉转换白光LED的光谱优化

针对中性色温4 870 K,考虑斯托克斯损失,研究了两基色、三基色的白光LED的光谱优化。结果表明:InGaN/GaN基蓝光LED激发YAG荧光粉合成的白光光视效能可高达483.5 lm/W,但显色性较差,计算的斯托克斯效率为83.9%。加入窄带红色荧光粉或红光LED,优化后的光视效能降低为343 lm/W,但显色指数升至94.7,同时计算得到该LED的斯托克斯效率为84.4%。对该优化的三基色LED光谱进行可调色温白光的特性分析,发现较高色温 (＞4 000 K)对应的显色指数普遍高于低色温(＜4 000 K)的显色指数。     

Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor

Nanometer sized Ni-dot/Ag/Pt metal coating films with different Ni-dot sizes were incorporated in InGaN based blue light emitting diodes as p-type reflection metal to enhance the extraction efficiency of blue light. For the reflectivity change from 84% to 93.7%, the optical output power of blue light before phosphor coating and the luminous flux of white light after phosphor deposition have improved by 49.3% and 58.2% at 350 mA, respectively. For the presented white light devices, the blue and yellow luminescence respectively has been improved relatively up to 1.52 and 1.67 times. The improved extraction efficiency of yellow light from the phosphor integrated blue light emitting diode is thought to be attributed to the reduction of round trip loss of blue and yellow light inside the device due to the enhanced reflectivity of nanometer sized Ni/Ag/Pt p-type reflection metal.     

功率型白光LED光学特性退化分析

将GaN基蓝光芯片涂敷YAG荧光粉和透明硅胶制成额定功率为1 W的白光发光二极管(LED),对其施加900mA的电流应力,在老化过程中测量白光LED的主要光学参数,考察其光学特性的退化情况。经过4 200 h的老化,样品光通量退化为初始值的15%~18% 。样品的漏电流明显增大,表明芯片有源区缺陷密度提高,但光谱分布图中蓝光部分的辐射量未减少,仅观察到黄光部分辐射量的减少,推断出YAG荧光粉的转换效率降低。同时,从原理上分析了样品色温逐渐增大,显色指数基本不变的原因,对大功率白光LED在照明领域的应用有一定的借鉴意义。     

白光LED荧光粉涂敷工艺及光学性质

在20mA电流下,对自行设计的白光LED进行测试,发现荧光粉远离芯片封装方法与传统封装方法相比,流明效率提高了20.3%。效率的提高主要是因为减小了LED芯片对荧光粉散射的吸收。同时测得随着正向电流的增加,色坐标x,y的值逐渐减小,色温升高,而光通量呈非线性增加,流明效率逐渐下降。     

White light emission from blue and near ultraviolet light-emitting diodes precoated with a Sr3SiO5:Ce3+,Li+ phosphor

White-light-emitting diodes (WLEDs) were fabricated by combining a yellow Sr3SiO5:Ce3+, Li+ phosphor with a blue light-emitting diode (LED) (460 nm chip) or a near ultraviolet (n-UV) LED (405 nm chip), respectively. Color temperature (Tc) of Sr3SiO5:Ce3+, Li+-based WLEDs could be tuned from 6500 to 100,000 K (blue LED pumping) and from 4900 to 50,000 K (n-UV LED pumping) without mixing with other phosphors. The blue LED-pumped WLED showed excellent white light (luminous efficiency=31.7 lm/W, Tc=6857 K) at 20 mA. This WLED showed a stable color coordinates property against an increase of the forward current. An n-UV LED-pumped WLED also showed bright white light (25.0 lm/W, 5784 K) at 20 mA.     

Bright white light electroluminescent devices based on efficient management of singlet and triplet excitons

Efficient and bright white organic light-emitting devices (WOLEDs) based on phosphor sensitized fluorescence are improved by using an unusual device structure, in which phosphorescent emissive layer is sandwiched between two blue fluorescent doped ones. This architecture allows for resonant energy transfer from both the host singlet and triplet energy levels that minimizes exchange energy losses. Thus, a WOLED with a maximum luminous efficiency of 11.63 cd/A, a maximum power efficiency of 7.37 lm/W, a maximum luminance of 31,770 cd/m², and Commission Internationale de L’Eclairage coordinates of (0.34, 0.36) is achieved.     

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm² and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm² were achieved. We obtained luminance of 5993 cd/m² when current density was 140 mA/cm². The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength.     

Fabrication of red-emitting CaAlSiN3: Eu2+ through phosphor-in-glass approach for application in rear combination lamp

In this study, the red-emitting phosphor-in-glass (PiG) using the CaAlSiN₃: Eu²⁺ (CASN) phosphor is reported for the first time. The CASN: Eu²⁺ PiG samples with a maximum luminous flux of 25.1–29.4 for l minute at laser power of 1 W/mm² was obtained using a low-temperature glass frit and GPS furnace. Despite the increase in the phosphor from 15 to 25 wt%, the PiG produced at low temperature of 380 °C showed robust properties. Finally, the red PiG module designed for rear lamp applications maintains over 90% lumens for a minute at 350 mA and achieves an intense red light having a color temperature of 4589 K.     

TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响

利用热压法将TiO₂微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO₂的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO₂浓度为0.966 g/cm³ 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO₂的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温.     

基于荧光玻璃的高效LED白光技术

采用高温熔融法制备了一定质量比例的SiO_2-YAG∶Ce~(3+)片状荧光玻璃,厚度为0.2 mm,分析其XRD物相、光学和SEM微观结构、PL光谱。结果表明:荧光玻璃保留了晶相,荧光粉颗粒在玻璃基质中均匀分布,荧光玻璃和荧光粉的激发响应关系一致。在465 nm蓝光激发下,发射波长均在535 nm附近,表明荧光玻璃除含有玻璃相,还有荧光粉的物质结构特性。将不同波长蓝光芯片与不同荧光粉含量的荧光玻璃进行封装测试,结果表明:器件的流明效率可达到234.81 lm/W;色温和显色指数均随荧光粉含量增加而单调下降,呈现高色温和低显色指数;荧光粉质量分数从6%增加至15%时,不同波长激发下的色坐标x与y呈现大致相同的线性变化率。采用450 nm激光激发荧光玻璃,测试样品温度变化发现温升较缓,温降迅速,耐热性能优越。实验结果表明,将荧光玻璃用于LED白光照明封装,能实现流明效率和耐热性能的大幅提升,形成良好的白光输出。