Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor

Nanometer sized Ni-dot/Ag/Pt metal coating films with different Ni-dot sizes were incorporated in InGaN based blue light emitting diodes as p-type reflection metal to enhance the extraction efficiency of blue light. For the reflectivity change from 84% to 93.7%, the optical output power of blue light before phosphor coating and the luminous flux of white light after phosphor deposition have improved by 49.3% and 58.2% at 350 mA, respectively. For the presented white light devices, the blue and yellow luminescence respectively has been improved relatively up to 1.52 and 1.67 times. The improved extraction efficiency of yellow light from the phosphor integrated blue light emitting diode is thought to be attributed to the reduction of round trip loss of blue and yellow light inside the device due to the enhanced reflectivity of nanometer sized Ni/Ag/Pt p-type reflection metal.