经验赝势法在GaAs/Ge,AlAs/GaAs和AlAs/Ge异质结能带排列理论计算中的应用

在异质结能带排列的理论计算中，采用经验赝势能带计算方法，并将平均键能Ｅ_m作为参考能级，计算了GaAs/Ge,AlAs/GaAs和AlAs/Ge三种异质结的整体能带结构和排序（包括价带、导带和带隙），获得完整且较准确的理论计算结果，其价带偏移ΔＥ_ｖ的计算值分别为０.５７，０.５０和１.０７ｅＶ．     

N掺杂Cu2O薄膜的光学性质及第一性原理分析

采用射频磁控溅射技术, 在不同温度下制备了N掺杂Cu₂O薄膜．透射光谱分析发现, N掺杂导致Cu₂O成为允许的带隙直接跃迁半导体, 并使Cu₂O的光学禁带宽度增加．不同温度下沉积的薄膜光学禁带宽度E_g=2.52± 0.03 eV．第一性原理计算表明, N掺杂导致Cu₂O的禁带宽度增加了约25%, 主要与价带顶下移和导带底上移有关, 与实验报道基本符合．N的2p电子态分布不同于O原子, 在价带顶附近具有较大的态密度是N掺杂Cu₂O变成允许的带隙直接跃迁半导体的根本原因．     

g-C3N4/SnS2异质结构:一类有潜力的光解水催化剂

采用第一性原理方法研究了层间耦合作用对g-C₃N₄/SnS₂异质结构的电子结构和吸光性质的影响.发现g-C₃N₄/SnS₂是一类典型的范德瓦异质结构,能有效吸收可见光,其价带顶和导带底与水的氧化还原势匹配,且由于电荷转移而导致的界面处极化场有利于光生载流子的分离.这些理论研究结果表明g-C₃N₄/SnS₂异质结构是一类非常有潜力的光解水催化材料.     

超高泵浦功率下的Xe(6p[1/2]0, 6p[3/2]2, 和6p[5/2]2)原子的能量转移过程

本文研究了Xe(6p[1/2]₀, 6p[3/2]₂, and 6p[5/2]₂)原子在聚焦条件下的动力学过程. 激发能级的原子密度在聚焦条件下会显著地增加,因此两个高激发态原子之间的energy-pooling碰撞的概率也会增加. 这种energy-pooling碰撞主要有三种类型. 第一种类型为energy-pooling碰撞导致的电离. 一旦将激发激光聚焦,就可以从侧面的窗口观察到非常明显的电离现象,不论激发能级是6p[1/2]₀、6p[3/2]₂或6p[5/2]₂能级. 这种电离的产生机理是energy-pooling电离或者一个Xe^*原子再吸收一个光子产生电离. 第二种类型为跨越较大能极差的energy-pooling碰撞. 当激发能级为6p[1/2]₀能级的情况下,两个6p[1/2]₀原子碰撞会产生一个5d[3/2]₁原子和一个6s''[1/2]₀原子. 第三种类型为跨越较小能级差的energy-pooling碰撞. 以5个二次产生的6p能级为上能级的荧光强度都变得更强,并且这些荧光的上升沿都变得更陡峭. 产生这些6p原子的主要机理是energy-pooling碰撞并非简单的碰撞弛豫. 基于理想气体原子之间的碰撞概率公式,推导出两个6p[1/2]₀原子的energy-pooling碰撞速率为6.39x10⁸s^-1. 此外,6s原子在聚焦条件下的密度也会增加. 因此所有的荧光曲线会因为辐射俘获效应而出现非常严重的拖尾.     

过渡金属Fe或Ag掺杂K2Ti6O13的电子结构和光学性质

本文利用基于密度泛函理论（DFT）的第一性原理计算研究了它们的电子结构和光学性质.光学性质的计算结果和实验相一致.结果表明,Fe或Ag掺杂后,K₂Ti₆O₁₃的带隙中出现了杂质带且其带隙值变小,因而使掺杂后的K₂Ti₆O₁₃的吸收边发生红移并实现了其对可见光吸收.其中杂质带主要由Fe 3d态或Ag 4d态与Ti 3d态和O 2p态杂化而成.对于Fe掺杂的K₂Ti₆O₁₃,杂质带位于带隙中间,因此可以作为电子从价带跃迁到导带的桥梁.对于Ag掺杂的K₂Ti₆O₁₃,杂质带位于价带顶附近为受主能级,可以降低光生载流子的复合概率.实验和计算研究表明,通过Fe或Ag的掺杂可以实现了K₂Ti₆O₁₃对可见光的吸收,这对进一步研究K₂Ti₆O₁₃的光学性质具有重要意义.     

碳-锌共掺杂锐钛矿相TiO2 电子结构与光学性质的第一性原理研究

近年来的理论和实验研究表明,通过不同离子共掺杂TiO₂是减小其禁带宽度的一种有效方法.本文采用基于第一性原理的平面波超软赝势方法研究了C和Zn共掺杂TiO₂的能带结构、态密度和光学性质.计算结果表明C-Zn共掺杂导致导带相对Fermi能级发生了明显的下降,同时在TiO₂的导带下方与价带上方形成了新的杂质能级,使TiO₂的禁带宽度变小, TiO₂的光学吸收带边产生红移. 杂质能级可以降低光激发产生的电子-空穴对的复合概率, 提高TiO₂的光催化效率. 此外, 掺杂后TiO₂在可见光区的吸收系数有明显增加, 能量损失也明显减小.     

氮铁共掺锐钛矿相TiO2电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论的平面波超软赝势方法研究了N,Fe共掺杂TiO₂的晶体结构、电子结构和光学性质.研究表明,N,Fe共掺杂TiO₂的晶格体积、原子间的键长及原子的电荷量发生变化,导致晶体中产生八面体偶极矩,并因此光生电子-空穴对有效分离,提高TiO₂的光催化活性;N,Fe共掺杂同时在导带底和价带顶形成了杂质能级,使TiO₂的禁带宽度变窄,光吸收带边红移到可见光区,这些杂质能级可以降低光生载流子的复合概率,提高Ti     

M’型GdTaO4电子结构的第一性原理研究

运用基于密度泛函理论的赝势平面波方法计算了M’型GdTaO₄的电子结构.结果表明：M’型GdTaO₄价带顶主要由O-2p电子构成,导带底由Ta-5d的e轨道电子构成;当U_eff=8 eV时,自旋向上和自旋向下的Gd-4f电子分别局域于价带顶以下627 eV和导带底以上301 eV处;计算得到M’型GdTaO₄的折射率为224,与应用半经验的Gladstone-Dale关系得到的结果符合得很好.     

C掺杂锐钛矿相TiO2吸收光谱的第一性原理研究

运用第一性原理,对C掺杂锐钛矿相TiO₂的电子结构进行了研究,从能带结构理论解释了C掺杂TiO₂吸收光谱的一些实验现象.发现在C掺杂后的锐钛矿相TiO₂的禁带宽度增大,并且在带隙中出现了杂质能级,这些杂质能级主要是由C 2p轨道上的电子构成的,它们之间是独立的,正是这些独立的杂质能级使TiO₂掺杂后可以发生可见光响应.价带上的电子可以吸收一定能量的光子跃迁到杂质能级,而杂质能级上的电子也可以吸收一定能量的光子跃迁到导带,所以从理论上可以计算出掺杂后的TiO₂在可见光范围内存在两个吸收边,与实验中所得到的现象相一致.     

Cl2+离子R支跃迁光谱的理论研究

从双原子分子能级的物理表达式出发进行多次微分,建立了预测双原子分子体系R支高振转跃迁谱线的新解析公式. 使用新解析公式预测双原子体系R支高阶跃迁谱线的数据时,最多只需15条精确的实验跃迁谱线和该跃迁带中对应的上下 振动态的转动光谱常数B′_v 和 B″_v.将该解析公式用于预测Cl₂⁺ 离子 A²∏_u---X²∏_g跃迁系(3,7)带和(4,8)带的跃迁谱线,不仅精确的重复了实验给出的较低阶的跃迁光谱数据值, 而且正确预言了所研究体系中缺失的振转跃迁谱线,尤其是高阶的跃迁谱线数据.     

Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires

We have synthesized GaN-core/ZnO-shell nanowires and investigated effects of the ZnO coating. The X-ray diffraction pattern showed that as-synthesized samples are composed of GaN and ZnO. Transmission electron microscopy indicated that the deposited ZnO shell layer is poly-crystalline. The photoluminescence (PL) spectrum of GaN has been changed by the ZnO coating, where emission bands centered at roughly 1.9 eV, 2.5 eV, and 3.3 eV were newly added to the emissions from core GaN nanowires. We found that overall PL intensity has been significantly increased by coating the ZnO shell layers.     

Ab initio calculations of band structure and thermophysical properties for SnS2 and SnSe2

The electronic band structure and elastic constants of SnS₂ and SnSe₂ have been calculated by using density-functional theory (DFT). The calculated band structures show that SnS₂ and SnSe₂ are both indirect band gap semiconductors. The upper valence bands originate mainly from S_p and Sn_d electrons, while the lowest conduction bands are mainly from (S, Se) _p and Sn_s states. The calculated elastic constants indicate that the bonding strength along the [100] and [010] direction is stronger than that along the [001] direction and the shear elastic properties of the (010) plane are anisotropic for SnS₂ and SnSe₂. Both compounds exhibit brittle behavior due to their low B/G ratio. Relationships among volumes, the heat capacity, thermal expansion coefficients, entropy, vibrational energy, internal energy, Gibbs energy and temperature at various pressures are also calculated by using the Debye mode in this work.     

Size quatized levels of the valence band and the optical gain in strained <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs structures under uniaxial compression

The band structure, size quatized levels, and wave functions in the conduction and valence bands of strained n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures are calculated numerically upon a uniaxial compression along the [110] direction. The calculation indicates a sublinear increase of the effective optical gap in the GaAs_0.84P_0.16 quantum well, strong mixing of states of light and heavy holes, and merging of the corresponding ground states in the quantum well of the valence band under a pressure of 4.5–5 kbar. The calculation of matrix elements of the electron-photon interaction operator for a system of possible interband transitions permits one to determine the optical gain for the TE and TM modes. The increase in this coefficient by two to fourfold under uniaxial compression agrees with the previously published experimental data on the increase of the electroluminescence intensity.     

Magnetic susceptibility of FeSb2 : A quasi-magnetic semiconductor

We study the magnetic susceptibility of FeSb₂ within a model of highly correlated valence band states and conduction electrons Coulomb interaction. Inter-band Coulomb and Hund type couplings are also considered. The latter are strong due to the d character of both valence and conduction bands edges. We suggest that the high susceptibility of FeSb₂(X ≈ 6×10^?4emu/mole) may be further enhanced by the addition of selected impurities, leading to a magnetic ground state.     

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO₃ heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48±0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO₃. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO₃. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.     

Electronic structures of the zinc-blende GaN/Ga1−xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga_0.85Al_0.15N compressively strained superlattices and quantum wells are investigated using a 6×6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at thek=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state atk=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Δn=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices.     

On the electrochemical reactivity of the redox couple Fe(CN)63−/Fe(CN)64− at the single crystal zinc oxide electrode

The system zinc oxide/hexacyanoferrate was used to test the applicability of the theoretical model for electrochemical reactions at semiconductor electrodes based upon direct electron transfer between levels of equal energy. This model appears to be valid for electron transfer involving the conduction band. From the pH-dependence of the cathodic reactivity, a value of 0.75 eV is found for the rearrangement energy of Fe(CN)₆^3?/Fe(CN)₆^4?. This result, combined with capacity and potential data, allows the construction of a general energy scheme for the system under consideration. It is shown that direct electron transfer from filled redox levels to empty levels in the valence band is highly improbable, so that the observed hole capture by Fe(CN)₆^4? from the UV-illuminated ZnO anode presumably occurs by a more complicated mechanism, e.g. involving surface states.     

First-principles study of electronic structure and magnetism of cubic Al1−xErxN using the LSDA+U approach

First-principles calculations, by means of the full-potential augmented plane wave method using the LSDA+U approach (local spin density approximation with Hubbard-U corrections), have been carried out for the electronic structure of the Al_0.75Er_0.25N. The LSDA+U method is applied to the rare-earth 4? states. We have investigated the electronic and magnetic properties.The Al_0.75Er_0.25N is shown to be a semiconductor, where the filled ? states are located in the valence bands and the empty ones above the conduction band edge. The magnetic interaction of the rare-earth ion with the host states at the valence and conduction band edges has been investigated and discussed.     

Electronic structure of the Sr2MgSi2O7:Eu persistent luminescence material

The electronic structures of the distrontium magnesium disilicate (Sr₂MgSi₂O₇(:Eu²⁺)) materials were studied by a combined experimental and theoretical approach. The UV-VUV synchrotron radiation was applied in the experimental study while the electronic structures were investigated theoretically by using the density functional theory. The structure of the valence and conduction bands and the band gap energy of the material as well as the position of the Eu²⁺ 4f ground state were calculated. The calculated band gap energy (6.7 eV) agrees well with the experimental value of 7.1 eV. The valence band consists mainly of the oxygen states and the bottom of the conduction band of the Sr states. The calculated occupied 4f ground state of Eu²⁺ lies in the energy gap of the host though the position depends strongly on the Coulomb repulsion strength. The position of the 4f ground state with respect to the valence and conduction bands is discussed using the theoretical and experimental evidence available.     

Electronic structure of cubic ErxGa1−xN using the LSDA+U approach

Electronic structure calculations were performed for substitutional erbium rare-earth impurity in cubic GaN using density-functional theory calculations within the LSDA+U approach (local spin-density approximation with Hubbard-U corrections). The LSDA+U method is applied to the rare-earth 4f states. The Er_xGa_1−xN is found to be a semiconductor, where the filled f-states are located in the valence bands and the empty ones above the conduction band edge. The filled and empty f-states are also shown to shift downwards and upwards in the valence and conduction bands, respectively, with increase in the U potentials.