Thermal and field emission effects of laser radiation on metal whisker diodes: Application to infrared detection devices

In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared region of the spectrum (λ ? 10 μm) using a metal point contact diode for generation, frequency mixing and detection. It has been postulated that the mechanism for the nonlinear current-voltage characteristic of the diode is tunnelling of electrons through an intermediate oxide film from the whisker into the metal base, i.e., the configuration is considered to be a metal-oxide-metal (MOM) tunnelling junction. Several features of the diode's operation create considerable doubt concerning the applicability of the MOM tunnelling mechanism. Analysis of the available experimental data led us to postulate an alternate solid state mechanism, namely a thermally enhanced field emission process. Such emission would be a consequence of the immersion of the whisker tip in the laser radiation resulting in (1) conduction heating which induces thermionic emission and (2) generation of an electric field at the tip necessary for electron tunnelling by field emission. In this paper we calculate rigorously the power absorbed in the metal whisker from the incident radiation. From the power absorbed, the heat conduction equation is solved for model geometries to obtain the laser induced temperature distribution at the whisker surface. Estimates of the electric field are obtained and combined with temperature calculations to obtain the nonlinear I–V characteristics of the thermally enhanced field emission model. Finally some simple experiments are proposed to test the thermal field emission hypothesis as a possible mechanism to explain the nonlinear characteristics of the metal whisker point contact diode.     

Comments on nonlinearity,response time and polarity reversal in a thermal field emission metal whisker diode

In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared region (μm) using a metal-metal point contact diode for the generation, frequency mixing and detection. At present there are two models which attempt to explain the rectification mechanism of the diode: 1) Tunneling of electrons through an intermediate oxide film from whisker to the metal base, i.e., configuration is considered to be a metal-oxide-metal (MOM) tunneling junction. 2) Rectification and nonlinear processes are the result of a thermal enchanced field emission. Such emission is a consequence of the immersion of the whisker in the laser radiation which results in conduction induced thermionic emission and/or generation of an electric field at the tip necessary for electron tunneling by field emission. The purpose of this comment is: a) to discuss qualitatively the basic difference between MOM and TFE theories as regards the origin of the nonlinearity and rectification properties of the metal point contact junction; b) to review the analyses describing the ultimate frequency response of the device; and 3) to provide a possible explanation for polarity reversal consistent with the TFE mechanism describing the operation of the whisker diode. This research was supported in part by the NATO Research Grants Program, Scientific Affairs, Brussels, Belgium, and under the auspices of the joint projects ESIS (electronic structure in solids) and IRIS (Institute for Research in Interface Sciences) of the Belgian Ministry for Science Policy     

Thermally enhanced response of metal—oxide—metal diodes

It is shown that in thin-film MOM diodes of contact area ~ 2.5 × 10^-9 m² the basic mechanism of infrared and visible laser radiation detection is the tunneling current dependence on contact temperature (thermally enhanced tunneling). Experiments were run on Al—Al₂O₃—Al MOM diodes.     

Field emission properties of nano-structured phosphorus-doped diamond

Nano-structured phosphorus-doped diamonds were fabricated for field emitters and their field emission properties were characterized. Two kinds of nano-structures were prepared; tip array structures and whiskers on tip structures. The tips, which have 100 nm radius and 10 μm height, are used in tip array structures; whiskers have tip radii of 5 nm and height of 500 nm. Following nano-structure formation, a reduction of threshold fields is observed compared to non-patterned flat surfaces. This is ascribed to field concentration at the tips. However, at higher electric fields, a saturation of the emission current is observed due to non-negligible bulk resistances in tips and whiskers.     

A Green's function solution to the image and multiple image interactions for hyperboloidal geometry: Application to metallic pointcontact infrared detectors

Using the Mehler-Fock transformation to solve Poisson's equation in prolate spheroidal coordinates, we have obtained an exact Green's function solution for all multiple image corrections to the vacuum tunneling barrier for a hyperboloidal tip-planar-anode model of a point-contact junction consisting of identical or dissimilar metals.These calculations show that the image corrections significantly modify both the form and area of the barrier, producing an enhancement in the rectification and tunneling currents at low bias.I–V characteristics have also been obtained for the hyperboloidal tip model using estimates of the emission and collection regions based on field emission experiments for whisker tips of comparable dimensions. These results are compared with earlier calculations whichThis research was supported in part by the NATO Research Grants Program, Grant No. 1902, Scientific Affairs Division, Brussels, BELGIUM.     

Thermal field emission as a mechanism for infrared laser light detection in metal whisker diode

The non-linear current-voltage characteristic of thermally enhanced field emission is proposed to explain the operation of a metal-metal point contact diode used for laser harmonic frequency generation and frequency mixing in the infrared region. This mechanism can explain several experimental observations which appear inconsistent with the previous analysis based on a planar metal-oxide-metal tunneling geometry.     

Autoelectronic emission of metallic films induced by picosecond pulses of infrared laser radiation

The well-known defects of the surface of a solid, microscopic projections and spikes, play a decisive role in electron emission induced by an electric field. If there are mobile electrons of holes in the solid, then the electric field is enhanced by a factor of 10–100 at the tip of a microscopic projection. This effect was discovered in electrostatics more than a century ago. In turn, the probability of tunnel emission of an electron from a metal into a vacuum is an exponential function of the electric field strength. Correspondingly the electron emission current density at the tip of a microscopic spike can be larger than that on a smooth surface by an astronomical factor. This effect is particularly strikingly manifested when picosecond pulses of infrared laser radiation of moderate power are used to initiate autoelectronic emission. Relative to a smooth surface, the emission current density is enhanced by hundreds of orders of magnitude. These experimental conditions can be used to scan the surface of a conducting material with a laser beam and to detect all the microscopic projections, in order to male detailed observations with subpicosecond time resolution of the phase transition from autoelectronic emission to explosive emission. Polytechnic University, Tomsk. Institute of Electrophysics, Ural Branch of the Russian Academy of Sciences. French National Scientific Center, Saclay, France. Translated from Izvestiya Vysshikh Uchenbnykh Zavedenii, Fizika, No. 11, pp. 42–44, November, 1997.     

Reaching the resolved tunnel regime for a femtosecond oscillator driven field emission electron source

We report on electron emission from tungsten tips with the help of 800 nm-8 fs laser pulses from a Ti:sapphire laser oscillator. We have measured autocorrelation traces of the exciting laser pulse in the photoelectron current, which allows a measurement of the non-linearity as a function of DC voltage applied to the tip. These data are well described by a numerical integration of the one-dimensional Schrödinger equation. The simulation shows us that electron emission resolves the electric field structure of the driving laser pulse, a regime which is currently an extremely fruitful area of research with atoms in the gas phase. For an 8 fs laser pulse with the correct carrier-envelope phase setting the emission duration is as short as 800 nm.     

Über die Verstärkung der Röntgenlumineszenz durch elektrische Felder und infrarote Strahlung

The x-ray excited luminescence of a zinc-cadmium sulfide phosphor activated by manganese and cobalt can be enhanced by infrared or red light, by alternating electric fields, and by both together. The infrared light as well as the electric field enhance the same emission band caused by manganese. The dependence of the enhancement on the strength and on the frequency of the electric field, and on the intensity and on the wavelength of the stimulating radiation has been investigated. Maximum enhancements are observed at frequencies of about 20 cps and at wavelengths of 0.77 and 1.35 μ of the stimulating light. When both the electric field and the stimulating light are applied together, the enhancement is lower than the sum of both effects. While at small intensities of the infrared the emission is increased by an additional electric field, it is diminished at high intensities. If the non-excited phosphor is exposed to the infrared a memory effect is found quite similar to that produced by electric fields reported byDestriau. The results are discussed using a model published earlier.     

EMIR: a photothermal tool for electromagnetic phenomena characterization

The heat-photon conversion phenomenon can be used to obtain a thermal image of an electromagnetic field. The electromagnetic field is partially absorbed by a sensitive paint or by a coating deposited on structures or on thin films. A map of the temperature increase of this absorbing medium is an image of the electric or magnetic intensity field distribution, depending on the electric and magnetic properties of the medium. A brief history of the various techniques used to obtain thermal images of electromagnetic fields is first presented. Emphasis is then put on infrared thermography which has been preferentially used in the past 20 years. An analysis of the thermal problems involved is presented. It appears that the solution to these problems is the key for the enhancement of the technique and for really quantitative work. Original solutions have been developed at ONERA, based on the combined use of optimised thin films with controlled electric conductivity, very sensitive infrared cameras, lock-in infrared thermography, and microwave interferometry. In these conditions, quantitative images of both amplitude and phase are obtained. Such an electromagnetic field imaging technique is a powerful tool which has no equivalent and which can be used for several types of applications such as: i) antenna radiation pattern characterization; ii) mode propagation characterization in waveguides; iii) study of absorption phenomena in complex materials; iv) nondestructive evaluation of dielectric structures (electromagnetic windows) or radar absorbing materials; v) knowledge of surface currents distribution on metallic structures.     

Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As quantum well

Tunneling effect on the intersubband optical absorption in a GaAs/Al _x Ga_{1- x} As quantum well under simultaneous presence of intense non-resonant laser and static electric fields is theoretically investigated. Based on the shooting method the quasi-stationary energy levels and their corresponding linewidths are obtained. By considering the joint action of the two external fields the linear absorption coefficient is calculated by means of Fermi’s golden rule and taking into account the intersubband relaxation. We found that: (i) the linewidth broadening due to the electron tunneling has an appreciable effect on the absorption spectrum; (ii) a constant relaxation time adopted in the previous studies could not be justified even for moderate electric fields, especially in the laser dressed wells. Our model predicts that the number of absorption peaks can be controlled by the external applied fields. While in the high-electric fields the excited states become unbounded due to a significant tunneling of the electrons, for high laser intensities and low/moderate electric fields the absorption spectrum has a richer structure due to the laser-generated resonant states. The possibility of tuning the resonant absorption energies by using the combined effects of the static electric field and the THz coherent radiation field can be useful in designing new optoelectronic devices.     

Time-resolved current response of a nanosecond laser pulse illuminated STM tip

Time-resolved dependence of the transient current through a ns laser pulse illuminated scanning tunneling microscope (STM) tip/sample gap in tunneling mode and out of tunneling range is presented. A self-designed fast STM-preamplifier (bandwidth 35 MHz) allows one to resolve the fine structure of the transient signal as well as the observation of some effects that are undetectable by using conventional low-band preamplifiers. The dependence of the threshold laser pulse intensity, which corresponds to the beginning of electron emission from tip (in non-tunneling mode), as a function of the tip/sample distance was investigated. At tip/sample distances from tunnel contact up to approximately 1 μm a linear dependence is found. This behavior is in good agreement with the theory for field enhancement in a STM tip/sample system. In tunneling mode a ns (fast component) as well as a μs (slow component) current response was found as a result of the laser pulse illumination. These data suggest the tip bending to be an important factor in clarifying the thermal/mechanical mechanism of laser-assisted surface nanomodification. Received: 4 May 1998 / Accepted: 29 January 1999 / Published online: 28 April 1999     

Measurement and study of the embedding impedance presented by the whisker antenna of a schottky diode corner cube mixer

A 250× scale model of a Schottky diode corner cube mixer designed for operation in the terahertz region has been built and tested. It has been successfully used to measure the embedding impedance presented to the diode at the whisker tip and also determine the impedance of the whisker antenna itself. The results have been input into a computer analysis to determine as to how the performance may be improved. With regards to improving the physical ruggedness of such mixers, a simple equivalent whisker structure has been determined and a new technique that may be used to fabricate a space qualifiable corner cube mixer intended for terahertz operation is disclosed.     

Calculation of the temperature and thermal expansion of a STM tip heated by a short laser pulse

A mathematical model for the calculation of the temperature field in a scanning tunneling microscope (STM) tip under laser illumination is developed. The duration of the laser pulse is a few nanoseconds or shorter. A Gaussian distribution of the laser light intensity in time and space is assumed. Two different mechanisms of tip heating are taken into account: 1. due to an enhanced electric field on the tip; 2. due to heating of the side surface of the tip by the focused spot of laser light. An average tip temperature is calculated using the heat conductivity equation. The enhanced electric field on the tip is calculated by the method of boundary integral equations. Received: 20 August 2002 / Revised version: 4 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-2551/962-490, E-mail: sklein@fh-muenster.de     

Numerical Simulation of the Base Impedance of Long Wire Whisker Antennas

With increasing frequencies the whisker structures used to contact honeycomb Schottky diodes remain no longer thin compared to wavelength. Whereas the finite thickness and the detailed tip shape do not influence the antenna pattern very much the antenna base impedance depends on these parameters to a great extent. A good impedance matching between Schottky diode and whisker antenna is necessary to optimise mixer or detector performance and can only be achieved if the antenna impedance is known.Antenna base impedances have been simulated numerically and checked by means of scaled model measurements for several whisker shapes. The influence of further parts of the antenna environment, as for example reflectors, has also been investigated. Simulation results have been discussed and compared to theory. Simulation has been found out to be a reliable tool for the determination of base impedances of almost arbitrarily shaped whisker antennas.     

Deep impurity-center ionization by far-infrared radiation

An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared and submillimeter-wavelength radiation, with photon energies tens of times lower than the impurity ionization energy. Within a broad range of intensities and wavelengths, terahertz electric fields of the exciting radiation act as a dc field. Under these conditions, deep-center ionization can be described as multiphonon-assisted tunneling, in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field. The field dependence of the ionization probability permits one to determine the defect tunneling times and the character of the defect adiabatic potentials. The ionization probability deviates from the field dependence e(E) ∝ exp(E ²/E _c ² ) (where E is the wave field, and E _c is a characteristic field) corresponding to multiphonon-assisted tunneling ionization in relatively low fields, where the defects are ionized through the Poole-Frenkel effect, and in very strong fields, where the ionization is produced by direct tunneling without thermal activation. The effects resulting from the high radiation frequency are considered and it is shown that, at low temperatures, they become dominant. Fiz. Tverd. Tela (St. Petersburg) 39, 1905–1932 (November 1997)     

混响室发射天线位置优化仿真及实验

 为提高混响室测试区域的场均匀性,在分析发射天线影响场均匀性原理基础上,采用基于矩量法的电磁仿真软件FEKO对混响室仿真模型进行数值计算,通过与遗传算法相结合研究了混响室发射天线的位置对测试区域场均匀性的影响,得到了优化后发射天线位置及相应的表征混响室测试区域场均匀性的电场标准偏差值。优化后,测试区域场均匀性较优化前有所改善,并通过实验验证了该优化仿真方法的正确性。     

Femtosecond shaping of transverse and longitudinal light polarization

Femtosecond laser pulse shaping techniques have been restricted to propagating transverse electromagnetic waves. We present a scheme for pulse shaping of optical near fields based on the excitation of longitudinal electromagnetic fields with polarization-shaped light pulses. By solving Maxwell's equations for a model nanostructure, i.e., a scanning tunneling microscope tip, with help from the boundary-element method, we demonstrate that the electric field vector oscillates in a complex yet controllable fashion in three dimensions. Many applications are envisioned because literally another dimension in the optimal control of light-matter interaction is accessible.     

Mixing of 30 THz laser radiation with nanometer thin-film Ni-NiO-Ni diodes and integrated bow-tie antennas

Mixing experiments with 30 THz CO₂-laser radiation as well as the detection of 35 ps 30 THz pulses of an optical-free-induction-decay CO₂-laser system have been performed with the first nanometer thin-film Ni-NiO-Ni diodes with a minimum contact area of 0.012 µm². Difference frequencies up to 85 MHz were detected by mixing two different CO₂-laser beams coupled to the diode with an integrated bow-tie antenna. The dependence of the beat signal on bias voltage, laser power and polarization of the infrared laser radiation was determined.     

Onset of breakdown and formation of cathode spots

When an increasing diode voltage is applied, enhanced field emission of electrons begins from a growing number of small spots or whiskers on the cathode surface. This stimulates desorption of weakly bound adsorbates from the surface of a whisker. As the diode voltage increases, the 100-V equipotential surface moving toward the cathode is met by the desorbed neutrals moving away from the cathode, resulting in sharp risetime for the onset of ionization of desorbed neutrals by field-emitted electrons. Positive ions produced in the ionization region a few microns from the electron emitting spot are accelerated back to it. This bombardment leads to surface heating of the spot. The onset of breakdown by this mechanism requires much less current than the Joule heating mechanism. The localized buildup of plasma above the electron emitting spot leads to pressure and electric field distributions that ignite unipolar arcs. The high current density of the unipolar arc and the associated surface heating by ions result in the explosive formation of cathode spot plasma