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1.
The sintering behavior, microstructures, and microwave dielectric properties of Ca2Zn4Ti15O36 ceramics with B2O3 addition were investigated. The crystalline phases and microstructures of Ca2Zn4Ti15O36 ceramics with 0-10 wt% B2O3 addition were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). The sintering temperature of Ca2Zn4Ti15O36 ceramic was lowered from 1170 to 930 °C by 10 wt% B2O3 addition. Ca2Zn4Ti15O36 ceramics with 8 wt% B2O3 addition sintered at 990 °C for 2 h exhibited good microwave dielectric properties, i.e., a quality factor (Qf) 11,400 GHz, a relative dielectric constant (εr) 41.5, and a temperature coefficient of resonant frequency (τf) 94.4 ppm/°C.  相似文献   

2.
In this paper we studied the effects of Bi2O3 and PbO addition on BiFeO3 (BFO) ceramic matrix. The structural, dielectric and magnetic properties of fifteen BFO samples were discussed in view of possible applications in RF and microwave devices. The present work also reports the preparation of the samples. Polyvinyl alcohol (PVA) and tetraethyl orthosilicate (TEOS) were also added as a binder in the fabrication procedure. The samples have been studied by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and magnetic hysteresis measurements. Further, a study based on impedance spectroscopy also has been done. Dielectric permittivity (ε′) and dielectric loss (tan δ) were measured at room temperature in the frequency range 100 Hz-10 MHz, as well as a.c. conductivity. The -Im[Z(f)] versus Re[Z(f)] plot has been obtained. The samples were investigated in view of possible applications like miniaturized filters, diplexers and dielectric resonator antennas (DRA). In the RF and MW frequency region, the application of magneto-dielectric and multiferroic perovskite composite materials is desirable for the miniaturization of components.  相似文献   

3.
Temperature and frequency dependence of the real (ε′) and imaginary (ε″) parts of the dielectric permitivity of cubic Ba(Ti0.7Hf0.3)O3 ceramic has been studied in the temperature range of 100 K to 350 K at the frequencies 0.1 kHz, 1 kHz, 10 kHz, 100 kHz for the first time. Diffuse phase transition and frequency dispersion is observed in the permittivity-vs-temperature plots. This has been attributed to the occurrence of relaxor ferroelectric behavior. The observed relaxor behavior has been quantitatively characterized based on phenomenological parameters. A comparison with the Zr doped BaTiO3 has also been presented. For Hf doped samples transmission electron microscopy (TEM) characterization do show the presence of highly disordered microstructure at length scales of few tens of nano-meters.  相似文献   

4.
The effects of tellurium (Te) additives on electrical conductivity, dielectric constant and structural properties of sintered silicon nitride ceramics have been studied. Different amounts of Te (10% and 20%) were added as sintering additives to silicon nitride ceramic powders and sintering was performed. Microstructure and composition were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The electrical conductivity and dielectric constant (ε′) increase exponentially with temperature greater than 800 K. The electrical conductivity and dielectric constant increase but activation energy decreases from 0.72 to 0.33 eV with the increase of Te concentration. However, the conductivity increases five orders of magnitude at the concentration of 10% of Te in Si3N4. As the Te concentration increases the sintered silicon nitride ceramics become denser. These types of samples can be used as high temperature semiconducting materials.  相似文献   

5.
In this paper we report the effect of microstructural characteristics on the magnetic properties of sol-gel synthesized Mn-doped ZnO. The microstructural characteristics of the samples (e.g., grain sizes and their distribution) have been varied by changing the sintering temperature (TS) and sintering duration (TH). Weak room temperature ferromagnetism (RTFM) has been observed in the samples sintered for ∼8 h at 500, 600, 700, 800 and 900 °C. The ferromagnetic fraction and the saturation magnetization, however, first increase as TS increases from 500 to 600 °C and after that both start decreasing. On the other hand, the samples sintered for ∼12 h at the same temperatures show paramagnetic behavior at room temperature. Field emission scanning electron microscope (FESEM) results show enhancement in the grain sizes with the increase in both TS and TH. Energy dispersive X-ray (EDAX) results show increase in the oxygen content in the sample with increase in both TS and TH. X-ray diffractometer (XRD) measurements reveal that the basic crystal structure of all the samples corresponds to the wurtzite structure of pure ZnO together with some minor impurities. The correlation between the observed magnetic properties and the microstructural characteristics of the samples has been discussed in this paper.  相似文献   

6.
Ba0.6Sr0.4TiO3 ceramics were prepared by a citrate precursor method. The structure and nonlinear dielectric properties of the resulting ceramics were investigated within the sintering temperature range 1200-1300 °C. Adopting fine Ba0.6Sr0.4TiO3 powder derived from the citrate method was confirmed to be effective in reducing the sintering temperatures required for densification. The ceramic specimens sintered at 1230-1280 °C presented relative densities of around 95%. A significant influence of sintering temperature on the microstructure and nonlinear dielectric properties was detected. The discrepancy in nonlinear dielectric behavior among the specimens sintered at different temperatures was qualitatively interpreted in terms of the dielectric response of polar micro-regions under bias electric field. The specimens sintered at 1230 and 1250 °C attained superior nonlinear dielectric properties, showing relatively low dielectric losses (tan δ) of 0.24% and 0.22% at 10 kHz together with comparatively large figure of merits (FOM) of 121 and 142 at 10 kHz and 20 kV/cm, respectively.  相似文献   

7.
Magnetoelectric (ME) nanocomposites containing Ni0.75Co0.25Fe2O4-BiFeO3 phases were prepared by citrate sol-gel process. X-ray diffraction (XRD) analysis showed phase formation of xNi0.75Co0.25Fe2O4-(1−x)BiFeO3 (x=0.1, 0.2, 0.3 and 0.4) composites on heating at 700 °C. Transmission electron microscopy revealed the formation of powders of nano order size and the crystal size was found to vary from 30 to 85 nm. Dispersion in dielectric constant (ε) and dielectric loss (tan δ) in the low-frequency range have been observed. It is seen that nanocomposites exhibit strong magnetic properties and a large ME effect. On increasing Ni0.75Co0.25Fe2O4 contents in the nanocomposites, the saturation magnetization (MS) and coercivity (HC) increased after annealing at 700 °C. The large ME output in the nanocomposites exhibits strong dependence on magnetic bias and magnetic field frequency. The large value of ME output can be attributed to small grain size of ferrite phase of nanocomposite being prepared by citrate precursor process.  相似文献   

8.
Ba4Sm9.33Ti18O54-Ag (BST-Ag) composites were prepared by a solid-state ceramic route and its dielectric properties were investigated in the vicinity of percolation threshold. The structure and microstructure of the composites were analyzed by X-ray diffraction along with optical and scanning electron microscopy observations. The effects of silver content and frequency on the dielectric properties of BST-Ag composites were studied using a LCR meter. The relative permittivity (εr) of the composite increases with silver content below the percolation limit and is in agreement with power law. A 0.14 volume fraction of silver loading increases the relative permittivity of the composite from 50 to 450 at 10 kHz. Addition of 0.15 volume fraction of silver increases the relative permittivity of the composite in the order of 105. It is found that the giant relative permittivity is almost constant for frequencies from 1 kHz to 1 MHz. This high εr composite offers the perspectives for application in electromechanical devices.  相似文献   

9.
The dielectric properties of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ superconductor samples were studied at 79 and 290 K by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 kHz to 10 MHz. A negative capacitance (NC) phenomenon has been observed, which is most likely arising due to higher Fermi level of ceramic superconductor samples than metal electrodes. Also the NC may be due to the space charge located at the multiple insulator–superconductor interfaces (grain boundaries) in the materials. The negative dielectric constant (ε′) and loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 79 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).  相似文献   

10.
Microwave-Hydrothermal (M-H) method has been successfully used for the synthesis of nanocrystalline Mn-Zn ferrites which are used for high-frequency applications. As synthesized powders were characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The nanopowders were annealed at 600 °C/20 min using the microwave sintering method. The frequency dependence of dielectric constant (ε′) was measured in the range of 10 Hz-1.3 GHz and initial permeability (μi) was measured in the range of 10 Hz-1 MHz. The total power loss (Pt) was measured on the annealed samples at 100 kHz and 200 mT condition. Conductor-embedded-ferrite transformers were fabricated and output power (Po), efficiency (η) and temperature rise (ΔT) were measured at sinusoidal voltage of 25 V at 1 MHz. The transformer efficiency (η) was found to be high and surface rise of temperature (ΔT) is very low.  相似文献   

11.
The effect of post sintering annealing on the dielectric response of (Pb1−xBax)(Yb0.5Ta0.5)O3 ceramics in the diffuse phase transition range (x=0.2) has been investigated. The samples are prepared by conventional solid-state reaction method. The samples are sintered at 1300 °C for 2 h and annealed at different temperatures (800, 900 and 1000 °C) for 8 h and at 800 °C for different time durations (8, 12 and 24 h). A significant change in the dielectric response has been observed in all the samples. The dielectric constant increases remarkably and the dielectric loss tangent decreases. The dielectric peaks of the annealed samples are observed to be more diffused with noticeable frequency dispersion compared to the as sintered sample.  相似文献   

12.
We report the characterization of nano-size zinc oxide (ZnO) powder synthesized via microwave-assisted heating of Zn(CH3COO)2·2H2O and NaHCO3 solution with deionized water (DI water) as the solvent. The as-synthesized ZnO powder was calcined at temperatures from 400 to 800 °C for 8 h. The X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) spectra revealed pure wurtzite structure for the ZnO nanopowder (NP) calcined at 800 °C. Scanning electron microscopy (SEM) images showed increasing size ZnO NP with uniform size distribution with increase in calcination temperature. Significant UV emission at about 373 nm has been observed in the photoluminescence (PL) spectra of the as-synthesized and calcined ZnO NP. Our results showed enhanced PL intensity with a reduced full-width at half-maximum (FWHM) for ZnO NP synthesized at higher calcination temperature.  相似文献   

13.
The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.  相似文献   

14.
The paper presents the results of theoretical and experimental researches of the analysis of nanopowder ZnO and ZnO-based structures formation mechanisms by means of pulse laser reactive technology (λ = 1.06 μm, τ = 10−7 to 10−5 s). The developed 2D model combines non-stationary heat transfer and fluid motion along with the calculated profile of surface deformation. The characteristics of the dispersive and chemical compositions and structural parameters of the synthesized nanopowder together with the influence of the energy of laser impulse evaporation, its duration and gas pressure in the reaction chamber have been studied using X-ray diffractrometry (XRD), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM). Particle size distribution analysis of ZnO has shown that the majority of them range from 5 to 60 nm in size. The photoluminescence emission spectra of the initial ZnO nanopowder at room temperature have been identified.  相似文献   

15.
Zinc oxide (ZnO) thin films were deposited on the gallium nitride (GaN) and sapphire (Al2O3) substrates by pulsed laser deposition (PLD) without using any metal catalyst. The experiment was carried out at three different laser wavelengths of Nd:YAG laser (λ = 1064 nm, λ = 532 nm) and KrF excimer laser (λ = 248 nm). The ZnO films grown at λ = 532 nm revealed the presence of ZnO nanorods and microrods. The diameter of the rods varies from 250 nm to 2 μm and the length varies between 9 and 22 μm. The scanning electron microscopy (SEM) images of the rods revealed the absence of frozen balls at the tip of the ZnO rods. The growth of ZnO rods has been explained by vapor-solid (V-S) mechanism. The origin of growth of ZnO rods has been attributed to the ejection of micrometric and sub-micrometric sized particulates from the ZnO target. The ZnO films grown at λ = 1064 nm and λ = 248 nm do not show the rod like morphology. X-ray photoelectron spectroscopy (XPS) has not shown the presence of any impurity except zinc and oxygen.  相似文献   

16.
ZnO nanorod arrays were synthesized by chemical-liquid deposition techniques on MgxZn1−xO (x = 0, 0.07 and 0.15) buffer layers. It is found that varying the Mg concentration could control the diameter, vertical alignment, crystallization, and density of the ZnO nanorods. The X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) data show the ZnO nanorods prefer to grow in the (0 0 2) c-axis direction better with a larger Mg concentration. The photoluminescence (PL) spectra of ZnO nanorods exhibit that the ultraviolet (UV) emission becomes stronger and the defect emission becomes weaker by increasing the Mg concentration in MgxZn1−xO buffer layers.  相似文献   

17.
We investigated the influence of lithium potassium zirconate (LiKZrO3) nanoparticles on the electrical properties and structural characteristics of poly(vinyl alcohol) (PVA) films. PVA/LiKZrO3 nanocomposite films were prepared by casting of aqueous solutions with varying LiKZrO3 content (0.5, 1.0, and 2.0 wt.%). The dielectric constant (ε′), dielectric loss (ε″), AC conductivity (σac), dielectric loss tangent (tan δ), and electric modulus (M′ and M″) of the nanocomposite films were measured over a range of frequencies at ambient temperature. The results show increases in σac and M′ with frequency, whereas ε′, ε″, and tan δ decreased with increasing frequency. The films were also characterized using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and X-ray diffraction (XRD) techniques. DSC and XRD revealed the nature of LiKZrO3 nanoparticle interaction with the PVA matrix. TGA analysis revealed an increase in thermal stability of the nanocomposites with increasing nanoparticle concentration. Scanning electron microscopy confirmed uniform dispersion of LiKZrO3 nanoparticles in the PVA matrix.  相似文献   

18.
Y2.6−xCa0.4+xZrxV0.2Fe4.8−xO12 (Zrx:YCaVIG) ferrite materials have been prepared by an oxide process. The phase formation and microstructure were analyzed by X-ray diffraction and scanning electron microscopy, respectively. The effects of Zr4+ substitution on phase compositions, sintering properties, microstructures and electromagnetic properties were investigated. The results indicate that all the sintered specimens with different Zr4+ contents show a single garnet structure. The addition of ZrO2 can gradually increase the lattice constant, and lower the sintering temperature and the theoretical density. With the increase of Zr4+ content, the dielectric loss (tan δε) and coercivity (Hc) decrease and then slightly increase, which is due to the variation of the microstructure. But the saturation magnetization (4πMs) shows the opposite variation compared to the former two properties. However, the dielectric constant (εr) remains stable and remanence (Br) monotonically declines. Finally, the specimen of Y2.3Ca0.7Zr0.3V0.2Fe4.5O12 sintered at 1350° possesses the optimum electromagnetic properties: εr=14.8, tan δε=1.35×10−3, 4πMs=1638 Gs, Br=596 Gs, Hc=0.75 Oe and ΔH (ferromagnetic resonance linewidth)=66 Oe.  相似文献   

19.
Temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) are studied in glassy Se70Te30 and Se70Te28Zn2. The measurements have been made in the frequency range (8-500 kHz) and in the temperature range 300 to 350 K. An analysis of the dielectric loss data shows that the Guintini's theory of dielectric dispersion based on two-electron hopping over a potential barrier is applicable in the present case.No dielectric loss peak is observed in glassy Se70Te30. However, such loss peaks exist in the glassy Se70Te28Zn2 in the above frequency and temperature range. The Cole-Cole diagrams have been used to determine some parameters such as the distribution parameter (α), the macroscopic relaxation time (τ0), the molecular relaxation time (τ) and the Gibb's free energy for relaxation (ΔF).  相似文献   

20.
W-doped ZnO nanostructures were synthesized at substrate temperature of 600 °C by pulsed laser deposition (PLD), from different wt% of WO3 and ZnO mixed together. The resulting nanostructures have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence for structural, surface morphology and optical properties as function of W-doping. XRD results show that the films have preferred orientation along a c-axis (0 0 L) plane. We have observed nanorods on all samples, except that W-doped samples show perfectly aligned nanorods. The nanorods exhibit near-band-edge (NBE) ultraviolet (UV) and violet emissions with strong deep-level blue emissions and green emissions at room temperature.  相似文献   

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