Catalytic growth and characterization of Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires

β-Ga₂O₃ nanowires have been synthesized using Ga metal and H₂O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga₂O₃ nanowires are achieved by separation of Ga metal and H₂O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga₂O₃ nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature. Received: 27 June 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +886-6/234-4496, E-mail: wujj@mail.ncku.edu.tw     

Broadband infrared luminescence from transparent glass–ceramics containing Ni<Superscript>2+</Superscript>-doped <Emphasis Type="BoldItalic">β</Emphasis> -Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystals

Transparent Ni²⁺-doped β-Ga₂O₃ glass–ceramics were synthesized. The nanocrystal phase in the glass–ceramics was identified to be β-Ga₂O₃ and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni²⁺ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass–ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 μs at room temperature. The observed infrared emission could be attributed to the ³ T _2g (³ F )→³ A _2g (³ F ) transition of octahedral Ni²⁺ ions. It is suggested that the Ni²⁺-doped transparent β-Ga₂O₃ glass–ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium. PACS 42.70.-a; 42.70.Ce; 81.40.Tv     

Spectroscopic Properties and Energy Transfer Analysis of Tm<Superscript>3+</Superscript>-Doped BaF<Subscript>2</Subscript>-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>-GeO<Subscript>2</Subscript>-La<Subscript>2</Subscript>O<Subscript>3</Subscript> Glass

This paper reports on the spectroscopic properties and energy transfer analysis of Tm³⁺-doped BaF₂-Ga₂O₃-GeO₂-La₂O₃ glasses with different Tm₂O₃ doping concentrations (0.2, 0.5, 2.0, 2.5, 3.0, 3.5, 3.5, 4.0 wt%). Mid-IR fluorescence intensities in the range of 1,300 nm−2,200 nm have been measured when excited under an 808 nm LD for all the samples with the same pump power. Energy level structure and Judd-Ofelt parameters have been calculated based on the absorption spectra of Tm³⁺, cross-relaxation rates and multi-phonon relaxation rates have been estimated with different Tm₂O₃ doping concentrations. The maximum fluorescence intensity at around 1.8 μm has been obtained in Tm₂O₃-3 wt% sample and the maximum value of calculated stimulated emission cross-section of Tm³⁺ in this sample is about 0.48 × 10⁻²⁰ cm² at 1,793 nm, and there is not any crystallization peak in the DSC curve of this sample, which indicate the potential utility of Tm³⁺-doped BaF₂-Ga₂O₃-GeO₂- La₂O₃ glass for 2.0-μm optical fiber laser.     

NMR study and electrical properties investigation of Zn<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>

The α-Zn₂P₂O₇ compound was obtained by conventional solid-state reaction. The sample was characterized by X-ray powder diffraction, solid state ³¹P NMR MAS, and electrical impedance spectroscopy. The solid state ³¹P MAS NMR, performed at 121.49 MHz, shows three isotropic resonances at −21.1, −18.8, and −15.8 ppm, confirming the non-equivalency of the three PO₄ groups in the α-Zn₂P₂O₇ form. They are characterized by different chemical shift tensor parameters with the local geometrical features of the tetrahedra. Electrical impedance measurements of β-Zn₂P₂O₇, form stable for temperature greater than 403 K, were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The AC conductivity obeys the universal power law. The approximation type correlated barrier hopping model explains the universal behavior of the n exponent. The impedance plane plot shows semicircle arcs at different temperatures, and an electrical equivalent circuit has been proposed to explain the impedance results. The circuits consist of the parallel combination of bulk resistance R _p and constant phase elements CPE. The simulated spectra show a good correlation with the experimental data.     

Study of nuclear quadrupole interactions and quadrupole Raman processes of Ga and Ga in a β-Ga2O3:Cr single crystal

Nuclear magnetic resonance (NMR) data and the spin–lattice relaxation times, T₁, of ⁶⁹Ga and ⁷¹Ga nuclei in a β-Ga₂O₃:Cr³⁺ single crystal were obtained using FT NMR spectrometry. Four sets of NMR spectra for ⁶⁹Ga (I = 3/2) and ⁷¹Ga (I = 3/2) were obtained in the crystallographic planes. The ⁶⁹Ga and ⁷¹Ga nuclei each had two chemically inequivalent Ga_I and Ga_II centers. Each of the ⁶⁹Ga and ⁷¹Ga isotopes yielded two different central NMR resonance lines originating from Ga_I and Ga_II sites. The nuclear quadrupole coupling constants and asymmetry parameters of ⁶⁹Ga_I, ⁶⁹Ga_II, ⁷¹Ga_I, and ⁷¹Ga_II centers in a β-Ga₂O₃:Cr³⁺ crystal were obtained. Analysis of the EFG tensor principal axes (PAs) for Ga nuclei and the ZFS tensor PAs for the Cr³⁺ ion confirmed that the Cr³⁺ paramagnetic impurity ion substitutes for the Ga³⁺ ion in the oxygen octahedron. In addition, the temperature dependencies of the ⁶⁹Ga and ⁷¹Ga relaxation rates were consistent with Raman processes, as T₁⁻¹ ∝ T². Even though the Cr³⁺ impurities are paramagnetic, the relaxations were dominated by electric quadrupole interactions of the nuclear spins in the temperature range investigated.     

Investigation of the Mn-doped compound CuGaTe<Subscript>2</Subscript> by <Superscript>63</Superscript>Cu AND <Superscript>69</Superscript>Ga nuclear magnetic resonance techniques

The synthesized base compound CuGaTe₂ and the Mn-doped compounds Cu_0.97Ga_0.97Mn_0.06Te₂ and Cu_0.93Ga_0.93Mn_0.14Te₂ have been investigated by using ⁶³Cu and ⁶⁹Ga NMR spectroscopy. The NMR spectra obtained testify to substantial structural distortions near the cationic positions in the crystal lattice of Mndoped samples. The constants of quadrupole coupling between ⁶³Cu and ⁶⁹Ga nuclei in the compounds investigated have been estimated.     

Helimagnetism in gallium substituted LuMn<Subscript>6</Subscript>Ge<Subscript>6</Subscript> studied by nuclear magnetic resonance

Zero-field nuclear magnetic resonance (NMR) of all NMR isotopes (¹⁷⁵Lu, ⁵⁵Mn, ⁷³Ge, ^69,71Ga) in LuMn₆Ge_6-xGa_x, 0 ≤ x ≤ 1, is used to monitor the variation of the hyperfine interaction with the sequence of antiferromagnetic - helimagnetic - ferromagnetic arrangement of the manganese moments of subsequent Kagomé net planes achieved by variation of the gallium content x. According to the ⁵⁵Mn-NMR results, the local Mn moment varies by less than ±5% in this series. ¹⁷⁵Lu-NMR proves canting of the antiferromagnetic sublattices in LuMn₆Ge₆. The anisotropy of the Ge magnetic hyperfine interaction decreases with increasing separation from the hexagonal Lu plane, whereas the absolute value of its isotropic part is only qualitatively correlated with the average separation of the six nearest Mn neighbours. Due to the anisotropic magnetic and electric hyperfine interaction at Ge and Ga sites, the non-collinear magnetic structures are clearly reflected by the NMR spectra, which are described quantitatively in this contribution. The preferred Mn moment direction rotates away from the c direction with x. The conduction or bonding electron spin polarization at the Ga nuclei is increased by 35–80% compared to the Ge nuclei. We argue that this is related with the variation of the magnetic order with the Ga content.     

Geometries and electronic structures of Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript>, Ga<Subscript>3</Subscript>Se<Subscript>2</Subscript> and their anions. Theoretical insights

We hereby report a theoretical study on the equilibrium geometries, electronic structures and harmonic vibrational frequencies of Ga₂Se₃, Ga₃Se₂ and their anions. The ground and low-lying excited states of Ga₂Se₃⁻, Ga₂Se₃, Ga₃Se₂⁻ and Ga₃Se₂ are studied at the B3LYP and/or MP2 and CCSD(T) levels in conjunction with 6-311+G(d) and 6-311+G(2df) one particle basis sets. Ga₂Se₂⁻ adopts the C_2v kite geometry while Ga₂Se₃ has a ‘V’ geometry. Ga₃Se₂⁻ has a three-dimensional ‘D_3h ’ geometry and Ga₃Se₂ prefers the three-dimensional ‘C_2v ’ structure. Electron detachment energies from the ground electronic states of the anions to several neutral states are reported and discussed. At CCSD(T)//MP2 level, the adiabatic electron affinity (AEA) of Ga₂Se₃ is calculated to be 3.23 eV when using the 6-311+G(2df) basis set and that of Ga₃Se₂ is 2.77 eV with the 6-311+G(d) basis set. The findings of this research are analyzed and compared with gallium oxide and sulfide analogues.     

Photoluminescence of nanoparticles of (Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>(Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.05</Subscript> solid solution

We have ground bulk samples to obtain nanoparticles of (Ga₂S₃)_1–x (Eu₂O₃) _x solid solutions, the sizes of which were determined using an atomic force microscope. The photoluminescence spectra of the nanoparticles were studied in the temperature interval 77–300 K. We have established the mechanisms for emission and transfer of energy from the matrix to the rare-earth ion, and we determined the Stokes shift (ΔS = 0.7 eV), the Huang–Rhys parameter (S = 16), and the optical phonon energy (ħ−ω = 23 meV).     

Synthesis and characterization of mono-dispersed Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Er<Superscript>3+</Superscript>-coated SiO<Subscript>2</Subscript> nanoparticles by co-precipitation process

In this paper, a facile co-precipitation process for preparing mono-dispersed core–shell structure nanoparticles is reported. The 110 nm SiO₂ cores coated with an yttrium aluminum garnet (Y₃Al₅O₁₂) layer doped with Er³⁺ were synthesized and the influence of the concentration ratio of [urea]/[metal ions] on the final product was investigated. The structure and morphology of samples were characterized by the X-ray powder diffraction, Fourier transform IR spectroscopy and transmission electron microscopy, respectively. The results indicate that a layer of well-crystallized garnet Y₃Al₅O₁₂:Er³⁺ were successfully coated on the silica particles with the thickness of 20 nm. The near infrared and upconversion luminescent spectra of the SiO₂@Y₃Al₅O₁₂:Er³⁺ powders further confirm that a Y₃Al₅O₁₂:Er³⁺ coating layer has formed on the surface of silica spherical particles.     

An Effect of Irradiation with Trivalent Boron Ions on Pinning in Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>CaCu<Subscript>2</Subscript>O<Subscript>8</Subscript> Thin Films as Revealed by MWA and Hall-Probe Measurements

Bi₂Sr₂CaCu₂O₈ thin films 200 nm thick were irradiated with 120 keV trivalent boron ions with the dose ranging from 10¹¹ to 10¹⁴ ion/cm². The critical parameters of the samples prior and after irradiation were monitored by non-resonance modulated microwave absorption and Hall-probe techniques. For low doses of 10¹¹–10¹² ion/cm², a slight increase in the critical current density and expansion of the area of the non-dissipative transport current flow were revealed. Such results are explained by the formation of separate areas of displaced atoms, which serve as effective pinning centers. The positive effects of irradiation faded away with dose increase of up to 10¹³–10¹⁴ ion/cm². This is due to overlap of radiation-induced defects and weak pinning on them.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Improvement of the intergranular pinning energy in uniaxially compacting (Bi-Pb)<Subscript>2</Subscript>Sr<Subscript>2</Subscript>Ca<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>10+δ</Subscript> ceramic samples

Measurements of the electrical resistivity as a function of temperature, ρ(T), for different values of applied magnetic field, B_a (0 ≤ B_a ≤ 50 mT), were performed in polycrystalline samples of Bi_1.65Pb_0.35Sr₂Ca₂ Cu₃O_10+δ subjected to different uniaxial compacting pressure (UCP). We have found appreciable differences in the grain orientation between samples by using X-ray diffractometry. From the X-ray diffraction patterns performed, in powder and pellet samples, we have estimated the Lotgering factor along the (00l) direction, F_(00l). The results indicate that F_(00l) increases ~23% with increasing UCP suggesting that grains of these samples are preferentially aligned along the c-axis, which is parallel to the compacting direction. The resistive transition of the samples have been interpreted in terms of the thermally activated flux-creep model. In addition, the effective intergranular pinning energy, U₀, have been determined for different applied magnetic field. The magnetic field dependence of U₀, for B_a > 8 mT, was found to follow a H^{- α} dependence with α = 0.5 for all samples. The analysis of the experimental data strongly suggested that increasing UCP results in appreciable changes in both the grain alignment and the grain connectivity of the samples. We have successfully interpreted the data by considering the existence of three different superconducting levels within the samples: the superconducting grains, the weak-links, and the superconducting clusters.     

Nanocrystalline CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> powders prepared by egg white solution route: synthesis,characterization and its giant dielectric properties

Nanocrystalline CaCu₃Ti₄O₁₂ powders with particle sizes of 50–90 nm were synthesized by a simple method using Ca(NO₃)₂·4H₂O, Cu(NO₃)₂·4H₂O, titanium(diisoproproxide) bis(2,4-pentanedionate) and freshly extracted egg white (ovalbumin) in aqueous medium. The synthesized precursor was characterized by TG-DTA to determine the thermal decomposition and crystallization temperature which was found to be at above 400 °C. The precursor was calcined at 700 and 800 °C in air for 8 h to obtain nanocrystalline powders of CaCu₃Ti₄O₁₂. The calcined CaCu₃Ti₄O₁₂ powders were characterized by XRD, FTIR, SEM and TEM. Sintering of the powders was conducted in air at 1100 °C for 16 h. The XRD results indicated that all sintered samples have a typical perovskite CaCu₃Ti₄O₁₂ structure and a small amount of CuO, although the sintered sample of the 700 °C calcined powders contained some amount of CaTiO₃. SEM micrographs showed the average grain sizes of 12.0±7.8 and 15.5±8.9 μm for the sintered CaCu₃Ti₄O₁₂ ceramics prepared using the CaCu₃Ti₄O₁₂ powders calcined at 700 and 800 °C, respectively. The sintered samples exhibit a giant dielectric constant, ε^′ of ∼ 1.5–5×10⁴. The dielectric behavior of both samples exhibits Debye-like relaxation, and can be explained based on a Maxwell–Wagner model. PACS 77.22.Gm; 81.05.Je; 81.07.Wx; 81.20.Ev     

Combined synthesis and in situ coating of nanoparticles in the gas phase

Ga₂O₃ was-synthesized by doping a premixed H₂/O₂/Ar flat flame with diluted trimethyl gallium Ga(CH₃)₃ in a low-pressure reactor. The mean particle diameter d _p of the resulting metal oxide was characterized in-situ with a particle mass spectrometer (PMS), and was observed to range between 2.5 nm ≤ d _p ≤ 6.5 nm. XRD results show that the as-synthesized Ga₂O₃ nanoparticles are mostly amorphous, although, a few broad reflexes were observed that indicate the presence of some degree of crystallinity. Thermal annealing of the as-synthesized material at 1000 °C for 5 min yielded β-Ga₂O₃ with a monoclinic structure. UV–VIS measurements indicate strong absorption in the UV range (4.8 eV), which corresponds quite well to the direct band gap of bulk Ga₂O₃. Photoluminescence (PL) measurements of the as-synthesized metal oxide show a broad emission ranging from 350 nm to 600 nm with a maximum at 460 nm. Crystalline β-Ga₂O₃ exhibited stronger luminescence than as-synthesized particles.     

Lasing from a solid-state Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript>:Nd<Superscript>3+</Superscript> laser at a high power of diode pumping

Experimental data for cw lasing from a compact solid-state laser based on a neodymium-doped calcium-gallium-germanium-garnet crystal (Ca₃Ga₂Ge₃O₁₂:Nd³⁺) at a wavelength of 1.06 μm in the case of intense diode pumping are reported. The laser output reaches 0.7 W for a cavity 15 mm long and an active element 1 mm thick. It is shown that the output power is limited by a thermal lens placed in the active element.     

Magnetic properties of LiNi<Subscript>0.5</Subscript>Mn<Subscript>0.47</Subscript>Al<Subscript>0.03</Subscript>O<Subscript>2</Subscript> as positive electrode for Li-ion batteries

The layered LiNi_0.5Mn_0.47Al_0.03O₂ was synthesized by wet chemical method and characterized by X-ray diffraction and analysis of magnetic measurements. The powders adopted the α-NaFeO₂ structure. This substitution of Al for Mn promotes the formation of Li(Ni_0.47²⁺Ni_0.03³⁺Mn_0.47⁴⁺Al_0.03³⁺)O₂ structures and induces an increase in the average oxidation state of Ni, thereby leading to the shrinkage of the lattice unit cell. The concentration of antisite defects in which Ni²⁺ occupies the (3a) Li lattice sites in the Wyckoff notation has been estimated from the ferromagnetic Ni²⁺(3a)–Mn⁴⁺(3b) pairing observed below 140 K. The substitution of 3% Al for Mn reduces the amount of antisite defects from 7% to 6.4–6.5%. The analysis of the magnetic properties in the paramagnetic phase in the framework of the Curie–Weiss law agrees well with the combination of Ni²⁺ (S = 1), Ni³⁺ (S = 1/2) and Mn⁴⁺ (S = 3/2) spin-only values. Delithiation has been made by the use of K₂S₂O₈. According to this process, known to be softer than the electrochemical one, the nickel ions in the (3b) sites are converted into Ni⁴⁺ in the high spin configuration, while Ni²⁺(3a)–Mn⁴⁺(3b) ferromagnetic pairs remain, as the Li⁺(3b) ions linked to the Ni²⁺(3a) ions in the antisite defects are not removed. The results show that the antisite defect is surrounded by Mn⁴⁺ ions, implying the nonuniform distribution of the cations in agreement with previous NMR and neutron experiments.     

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y₃Al₅O₁₂ by the simultaneous ablation of two separate targets of Nd:Gd₃Ga₅O₁₂ (GGG) and Ga₂O₃. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.     

Synthesis and microstructure of Co/Ni: MgGa<Subscript>2</Subscript>O<Subscript>4</Subscript> nanoparticles

This report discusses the preparation and microstructure of Co/Ni co-doped MgGa₂O₄ nanoparticles. The nanoparticles with the size of 20–55 nm were synthesized by sol-gel method. The phase and crystallinity were confirmed by X-ray powder diffraction (XRD) pattern. The particle size was estimated according to XRD data and transmission electron microscopy. The electronic structure was studied using X-ray photoelectron spectroscopy (XPS). The XPS studies showed that Ga³⁺ ions possess tetrahedral and octahedral sites of spinel structure and the inverse degree (two times of the fraction of tetrahedral Ga³⁺ ions) has increased with the increase of the doping concentration of Co²⁺ and Ni²⁺ ions. For Co/Ni co-doped MgGa₂O₄, two broad absorption bands of 350~500 and 550~700 nm were observed in the absorption spectra. The broad band at 350~500 nm was assigned to the combination of the absorption of octahedral Co²⁺ and Ni²⁺ ions, whereas the absorption band at 550~700 nm is mainly due to tetrahedrally coordinated Co²⁺ ions and octahedrally coordinated Ni²⁺ ions.     

Structural changes of piezoelectric La3Ga5SiO14 induced by paramagnetic ions revealed by Ga multiple quantum magic angle spinning

Experimental evidence that nuclear magnetic resonance (NMR) can detect structural changes of piezoelectric La₃Ga₅SiO₁₄ induced by dilute paramagnetic ions is presented. Gd³⁺ and Eu³⁺ cations have been incorporated into La₃Ga₅SiO₁₄ monocrystals. As expected, the line-width of the tetrahedral ²⁹Si magic angle spinning (MAS) NMR spectra as well as the inverse of the T₂ relaxation time of ⁷¹Ga increases with the concentration of the paramagnetic ions. A surprising result is shown by ⁷¹Ga multiple quantum (MQ) MAS NMR spectrum, which changes with the concentration of paramagnetic ions. The changes in the ⁷¹Ga MQMAS spectra can be explained by a more ordonated distribution of Ga ions inside the oxygen tetrahedra. The ⁷¹Ga MQMAS NMR spectra allow identification of the one octahedral and two tetrahedral Ga sites.