Material transport in Al-metallizations of power-loaded SAW structures

Material transport in Al/Ti-finger electrodes on LiNbO₃ substrates of power-loaded surface acoustic wave (SAW) structures were investigated under microscopic observation with respect to stress-induced material transport. Additionally, investigations were carried out before and after SAW loading during lifetime experiments. For the experiments, a special power SAW test structure was applied realizing travelling SAWs. The results show that the microstructure of the electrodes was damaged by void and hillock formation even at moderate input power. This changes the electrical and acoustical properties of the SAW structures irreversibly. The logarithmic time-to-failure (TTF) of damaged SAW structures depends linearly on loading time and rf power.     

The characteristics of surface acoustic waves on AlN/LiNbO3 substrates

The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 °C. Based on the structure of IDT/AlN/LiNbO₃, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO₃ substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO₃ substrate. The TCF of a SAW on an AlN/LiNbO₃ device was measured to be about -51 ppm/°C at h/λ=0.1, where h is the thickness of the AlN film and λ is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO₃ substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO₃ substrate (-73 ppm/°C). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V_p) of the SAW on an AlN/LiNbO₃ substrate was significantly increased by the increase of AlN thickness (h/λ). Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +886-7/525-4199, E-mail: ycc@ee.nsysu.edu.tw     

Numerical Calculation of SAW Propagation Properties at the x-Cut of Ferroelectric PMN-33%PT Single Crystals

Surface acoustic wave （SAW） properties at the x-cut of relaxor-based 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （PMN- 33%PT） ferroelectric single crystals are analyzed theoretically when poled along the [001]c cubic direction. It can be found that PMN-33%PT single crystal is a kind of material with a low phase velocity and high electromechanical coupling coefficient, and the single crystal possesses some cuts with zero power flow angle. The results are based on the material parameters at room temperature. The conclusions provide device designers with a few ideal cuts of PMN-33%PT single crystals. Moreover, choosing an optimal cut will dramatically improve the performance of SAW devices, and corresponding results for crystal systems working at other temperatures could also be figured out by employing the method.     

Stern-Gerlach spin filter using surface acoustic waves

We propose the ambipolar carrier transport by surface acoustic waves (SAWs) in a semiconductor quantum well (QW) for the realization of the Stern-Gerlach (SG) experiment in the solid phase. The well-defined and very low carrier velocity in the moving SAW field leads to a large deflection angle and thus to efficient spin separation, even for the weak field gradients and short (μm-long) interaction lengths that can be produced by micromagnets. The feasibility of a SG spin filter is discussed for different QW materials.     

X-ray diffraction analysis of the surface acoustic wave propagation in langatate crystal

X-ray diffraction on a langatate crystal (La₃Ga_5.5Ta_0.5O₁₄, LGT) modulated by a Λ=12 μm Rayleigh surface acoustic wave (SAW) was studied in a double axis X-ray diffractometer scheme at the BESSY synchrotron radiation source. SAW propagation in the crystal causes sinusoidal modulation of the crystal lattice and the appearance of diffraction satellites on the rocking curves, with their number, angular positions, and intensities depending on the wavelength and amplitude of acoustic vibrations of the crystal lattice. Strong absorption of X-ray radiation in LGT enables the observation of the diffraction spectra extinction at certain SAW amplitudes. X-ray diffraction spectra analysis makes it possible to determine SAW amplitudes and wavelengths, to measure the power flow angles, and investigate the diffraction divergence in acoustic beam in LGT.     

Acoustically induced dynamic potential dots

Mobile potential dots (dynamic dots, DDs) formed by surface acoustic waves (SAWs) are used to transport photogenerated electrons and holes in GaAs quantum wells (QWs). We investigate the interaction between the transported carriers and microscopic trap centers in the QW plane using spatially and time-resolved photoluminescence (PL) spectroscopy. The carriers recombine at the trap site emitting short (width0.6 ns) light pulses at a repetition rate corresponding to the SAW frequency. The dependence of the PL intensity from the traps on the number of carriers transported per DD n exhibits a well-defined, distinct plateau for n in the range from 5–20, which is attributed to the emission of a well-defined number of photons.     

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d₃₃. Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d₃₃, and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d₃₃, the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10⁹ Ω cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications.     

High electric-field-induced strain of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals in multilayer actuators

An optimum composition range (29%≤x≤31%) of 〈001〉 oriented (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃(PMNT) crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. A −1.5 kV/cm negative E-field can be applied to PMNT ferroelectric samples with low hysteresis. Forty layer actuators with individual element sizes of 7×7×0.7 mm³ were fabricated under identical processing conditions using two different materials: (1) single crystal PMNT and (2) commercial PZT-SF ceramics. Under free-load conditions, 48 μm displacements can been achieved in PMNT actuators at electric fields ranging from −1.5 to 10 kV/cm, which is more than twice the displacement of the PZT-SF actuators driven from −10 to 10 kV/cm. Under 4 kg loading, the displacements in PMNT stain actuators are decreased to 42.5 μm.     

Multifrequency characterization of viscoelastic polymers and vapor sensing based on SAW oscillators

Simplified relations for the changes in SAW velocity and attenuation due to thin polymer coatings and vapor sorption are presented by making analytic approximations to the complex theoretical model developed earlier by Martin et al. [Anal. Chem. 66 (14) (1994) 2201–2219]. The approximate velocity relation is accurate within 4% for the film thicknesses up to 20% of the acoustic wavelength in the polymer film, and is useful for analyzing the mass loading, swelling and viscoelastic effects in SAW vapor sensors. The approximate attenuation relation is accurate within 20% for very thin films, (less than 2% of the acoustic wavelength in the film). Based on these relations, a new procedure for determination of polymer viscoelastic properties is described that exploits the frequency dependence of the velocity and attenuation perturbations, and employs multifrequency measurement on the same SAW platform. Expressions for individual contributions from the mass loading, film swelling and viscoelastic effects in SAW vapor sensors are derived, and their implications for the sensor design and operation are discussed. Also, a new SAW comb filter design is proposed that offers possibility for multimode SAW oscillator operation over a decade of frequency variation, and illustrates feasibility for experimental realization of wide bandwidth multifrequency SAW platforms.     

Lead‐free piezoelectric (Na0.5Bi0.5)0.94TiO3–Ba0.06TiO3 nanofiber by electrospinning

Lead‐free (Na_0.5Bi_0.5)_0.94TiO₃–Ba_0.06TiO₃ (NBT‐BT6) nanofibers were synthesized by the sol–gel process and electrospinning, and a butterfly‐shaped piezoelectric response was measured by scanning force microscopy. NBT‐BT6 nanofibers with perovskite phase were formed, after being cleaned at 700 °C for 1 hour, and the diameters are in the range of 150 nm to 300 nm. The average value of the effective piezoelectric coefficient d₃₃ is 102 pm/V. The high piezoelectricity may be attributed to the easiness for the electric field to tilt the polar vector of the domain and to the increase of the possible spontaneous polarization direction. There is a potential for the application of NBT‐BT6 nanofibers in nanoscale piezoelectric devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface-acoustic-wave-induced space-charge waves in electron-hole systems

Space-charge waves in an electron-hole system are studied, which are excited by a moving grating provided by a surface acoustic wave (SAW). The SAW induces a constant current that may change its sign, when a constant electric field is applied opposite to the wave propagation direction. Current resonances are predicted to appear, when the SAW wavelength and frequency match the ones of the space-charge wave.     

Mechanical Reinforcement and Piezoelectric Properties of PZT Ceramics Embedded with Nano-Crystalline

The double-scale lead zirconate titanate （PZT） piezoelectric ceramics were prepared by the solid state processing with PZT nano-crystalline and micro-powder. The microstructures, electrical and mechanical properties of the double-scale PZT are investigated. All the sintered ceramics exhibit a single perovskite structure and the grain size of the dou ble-scale PZT reduces due to the incorporation of PZT nano-crystalline. Compared to normal PZT, the mechanical properties increase significantly and the piezoelectric properties decrease slightly. Mechanisms responsible for the reinforcement of the double-scale PZT are discussed.     

Analysis of spurious bulk waves in ball surface wave device

We analyzed the acoustic waves propagating in a sphere to establish a useful guideline for the design of NDE apparatus and ball surface acoustic wave (SAW) device exploiting the diffraction-free propagation of SAW on a sphere. First, we calculated the laser-generated acoustic displacements both under ablation condition and under thermoelastic condition and verified experimentally the validity of the calculation. Next, the acoustic waves excited by out-of-plane stress and those excited by in-plane stress were compared. The results showed that when the out-of-plane stress was applied, the relative amplitudes of the bulk waves to that of the SAW were larger and the number of bulk waves was larger than that when the in-plane stress was applied, while the SAW had similar waveforms in each case. The ratio of the relative amplitude of the bulk waves for the out-of-plane stress and the in-plane stress was 3.1:1 at phi(1)=90 degrees and 1.67:1 at phi(1)=0 degrees. The large amplitude for the out-of-plane stress can be explained by wide directivities of bulk waves. Consequently, we found that it is necessary for ball SAW device to select a piezoelectric material and form of interdigital transducer so that the in-plane stress becomes dominant.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode. Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn     

Measurement of the elastic properties of evaporated C60 films by surface acoustic waves

Surface Acoustic Wave (SAW) pulses were excited in C₆₀ films deposited on quartz and silicon substrates using pulses from excimer lasers with wavelengths of 248 nm and 308 nm for excitation. An optical beam-deflection technique and polymer electret transducers were utilized to detect the propagation of the SAW pulse with high spatial and temporal resolution, allowing an accuracy of better than 0.1% for SAW velocity measurements. With this technique the frequency dependence of the SAW velocity was determined for a number of fullerite films and density, as well as elastic bulk properties of the films were derived by a theoretical analysis of the dispersion effect.     

Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

The binding energies of the hydrogenic impurity in wurtzite InGaN coupled quantum dots (QDs) are calculated by means of a variational method, considering the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located in the center of the left dot, the donor binding energy is largest and insensitive to the barrier height of the wurtzite InGaN coupled QDs.     

Laser-generated surface acoustic waves in a ring-shaped waveguide resonator

Surface acoustic wave (SAW) waveguide resonator is formed by a ring-shaped strip of copper 10 μm wide and ∼130 μm in diameter embedded into a 0.8 μm thick layer of silica on a silicon wafer. SAWs are excited at one side of the copper ring by a short laser pulse focused into a spatially periodic pattern and detected via diffraction of the probe laser beam overlapped with the excitation spot. SAW wavepackets with central frequency 460 MHz travel around the ring and are detected each time they make a full circle and pass trough the probe spot. Potential applications of ring resonators for SAWs are discussed.     

Performance of Non-Contact Linear Actuators Driven by Surface Acoustic Waves*

A new kind of non-contact linear actuator （motor） driven by surface acoustic waves （SAWs） is presented, in which the stators are made from SAW delay lines using 128° YX-LiNbO3 substrates. A fluid layer is introduced between the slider and the stator of the actuator, and the slider is a circular aluminum disk suspended on the surface of the liquid （water） layer. As the SAW is excited on the stator, the SAW is converted to a leaky wave in the interface of the stator and the liquid, and then propagates into the liquid. Owing to the nonlinear effect of wave propagation, acoustic streaming is generated, which pushes the slider to move. By the experiments, the relations between the slider velocity and the experimental parameters, such as the exciting voltage of the SAWs, the thickness and the kinematic viscosity of the liquid layer, are obtained.     

Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells

Considering the strong built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations and the intrasubband relaxation, we investigate the linear and nonlinear intersubband optical absorptions in In_xGa_1-xN/Al_yGa_1-yN strained single quantum wells (QWs) by means of the density matrix formalism. Our numerical results show that the strong BEF is on the order of MV/cm, which can be modulated effectively by the In composition in the QW. This electric field greatly increases the electron energy difference between the ground and the first excited states. The electron wave functions are also significantly localized in the QW due to the BEF. The intersubband optical absorption peak sensitively depends on the compositions of In in the well layer and Al in the barrier layers. The intersubband absorption coefficient can be remarkably modified by the electron concentration and the incident optical intensity. The group-III nitride semiconductor QWs are suitable candidate for infrared photodetectors and near-infrared laser amplifiers.