Tunnelling current in Schottky diodes containing InAs quantum dots

Current transport mechanism in Schottky diode containing InAs quantum dots (QDs) is investigated using temperature-varying current-voltage characteristics. We found that the tunnelling emission has obvious effects on the I-V characteristics. The I-V-T measurements revealed clear effects of QDs on the overall current flow. Field emission (FE, pure tunnelling effect) was observed at low temperature and low voltages bias region. The zero-bias barrier height decreases and the ideality factor increases with decreasing temperature, and the ideality factor was found to follow the T₀-effect. When the reverse bias is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunnelling of electrons through discrete levels in quantum dots. The traps distributed within InAlAs layer can also act as a transition step for reverse bias defect-assisted tunnelling current which can phenomenologically explain the decrease of the effective barrier height with measurement temperature.     

Magnetic and optical properties of self-organized InMnAs quantum dots

Ten layers of self-assembled InMnAs quantum dots with InGaAs barrier were grown on high resistivity (1 0 0) p-type GaAs substrates by molecular beam epitaxy (MBE). The presence of ferromagnetic structure was confirmed in the InMnAs diluted magnetic quantum dots. The ten layers of self-assembled InMnAs quantum dots were found to be semiconducting, and have ferromagnetic ordering with a Curie temperature, T_C=80 K. It is likely that the ferromagnetic exchange coupling of sample with T_C=80 K is hole mediated resulting in Mn substituting In and is due to the bound magnetic polarons co-existing in the system. PL emission spectra of InMnAs samples grown at temperature of 275, 260 and 240 °C show that the interband transition peak centered at 1.31 eV coming from the InMnAs quantum dot blueshifts because of the strong confinement effects with increasing growth temperature.     

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

The composition and size of optically active Cd_xZn_1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for Cd_xZn_1−xSe/Zn_0.97Be_0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.     

Self-organized growth of quantum dot-tunnel barrier systems

Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al_0.33Ga_0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.     

Colloidal semiconductor quantum dots: Potential tools for new diagnostic methods

We present and discuss the application of colloidal semiconductor quantum dots for diagnostic purposes, with special emphasis for cancer. We prepared and applied core-shell cadmium sulfide-cadmium hydroxide (CdS/Cd(OH)₂) semiconductor quantum dots in aqueous medium. Tissue and cells labeling was evaluated by laser scanning confocal microscopy as well as by conventional fluorescence microscopy. The procedure presented in this work, shown to be a promising tool for fast, low-cost and precise cancer diagnostic protocols.     

InSb quantum dots and quantum rings on InAs-rich surface

We report a study of InSb nanoobjects (quantum dots and quantum rings) grown on InAs-rich surface by liquid phase epitaxy. Characterization of the sample surface was performed using atomic force microscopy (AFM). The bimodal formation of the uncapped InSb quantum dots (QDs) was observed for the growing on a binary InAs substrate. Uniform high-density (1 × 10¹⁰ cm⁻²) quantum dots with a height of 3 nm were obtained at T = 420-430 °C, whereas low-density (5 × 10⁸ cm⁻²) big quantum dots were 9 nm in height. As a buffer layer, lattice-matched InAsSb_0.12P_0.25 solid solution was deposed on InAs substrate using metal-organic vapour phase epitaxy. Deposition from the InSb melt on the buffer layer resulted in the formation of InSb nanoobjects with density as high as 3 × 10¹⁰ cm⁻².     

Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates

We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching ¹⁰⁵ s⁻¹. In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots.     

Magneto-absorption in cylindrical quantum dots

The absorption of light in an ensemble of non-interacting cylindrical quantum dots in the presence of a magnetic field is discussed using a model consisting of dots with rectangular infinitely-high potential barriers. The ensemble’s absorption coefficient is calculated — as well as the threshold frequency of absorption — as a function of the applied magnetic field and the quantum dot size. Theoretical results are compared with experimental data on magneto-luminescence in an In_0.53Ga_0.47As/InP cylindrical quantum dot system. In addition, using a perturbation theory framework, the influence of excitonic effects on the behaviour of the electron-hole energetic spectrum of said system is discussed.     

ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究，观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时，测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps. 关键词： ZnCdSe量子阱 CdSe量子点 激子 隧穿     

Inter-dot coupling effects on transport through correlated parallel coupled quantum dots

Transport through symmetric parallel coupled quantum dot system has been studied, using non-equilibrium Green function formalism. The inter-dot tunnelling with on-dot and inter-dot Coulomb repulsion is included. The transmission coefficient and Landaur-Buttiker like current formula are shown in terms of internal states of quantum dots. The effect of inter-dot tunnelling on transport properties has been explored. Results, in intermediate inter-dot coupling regime show signatures of merger of two dots to form a single composite dot and in strong coupling regime the behaviour of the system resembles the two decoupled dots.      

Dispersive Properties of tunnelling—induced transparency in an asymmetric double quantum well

We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum (c=3×10⁸). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v_g=c/4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.     

Strain and optical transitions in InAs quantum dots on (001) GaAs

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dots as 20–22 nm with a height of 10–12 nm, and photoluminescence spectra show strong emission at 1.26 μ m when the sample is capped with a GaAs layer. The luminescence peak wavelength is red-shifted to 1.33 μ m when the dots are capped by an In_0.4Ga_0.6As layer. Excluding the strain it is shown that the theoretical expectation of the ground-state optical transition energy is only 0.566 eV (2.19 μ m), whereas a model with three-dimensionally-distributed strain results in a transition energy of 0.989 eV (1.25 μ m). It has thus been concluded that the InAs quantum dot is spatially strained. The InGaAs capping layer reduces the effective barrier height so that the transition energy becomes red-shifted.     

Dephasing of quantum tunnelling in molecular nanomagnets

Dephasing mechanism of quantum tunnelling in molecular magnets has been studied by means of the spin-coherentstate path integral in a mean field approximation. It is found that the fluctuating uncompensated transverse field from the dipolar-dipolar interaction between molecular magnets contributes a random phase to the quantum interference phase. The resulting transition rate is determined by the average tunnel splitting over the random phase. Such a dephasing process leads to the suppression of quenching due to the quantum phase interference, and to the steps due to odd resonances in hysteresis loop survived, which is in good agreement with experimental observations in molecular nanomagnets Fes and Mn12.     

Nonlinear optical rectification in asymmetric coupled quantum wells

The optical rectification (OR) in the asymmetric coupled quantum wells (ACQWs) is calculated theoretically. The dependence of the OR on the width of the right-well and the barrier is studied. The analytical expression of the optical rectification coefficient is obtained by using the compact density-matrix approach and the iterative method, and the numerical calculations are presented for a typical GaAs/Al_xGa_1 − xAs ACQW. The results obtained show that the OR efficient can reach the magnitude of 10⁻⁴ m/V in this ACQW system, which is 1-2 orders higher than that in single quantum systems. Moreover, the OR coefficient is strongly dependent on the widths of the barrier and the right-well of the ACQWs. An appropriate choice for the width of the barrier and the right-well of the ACQWs can induce a larger OR coefficient.     

Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures

The transparency, reflection and luminescence spectra of In_0.3Ga_0.7As structures with 8 nm thickness and quantum wells limited by the barrier layer GaAs of a 9 nm (upper layer) and 100 nm (bottom layer) thickness had been studied in the region of photon energy 0.5–1.6 eV. Lines associated with the transitions hh,lh1-e1(1s,2s,3s), hh2,lh2-e2(1s,2s,3s), hh1,lh1-e2(1s) and hh3,lh3-e3(1s) had been revealed in reflection spectra. The shapes of the reflection and transparency lines had been calculated using a single oscillator model of dispersion relations and the Kramers–Kronig integrals. The binding energy of hh,lh1-e1 excitons, the effective mass m_hh^∗ and m_lh^∗ and the damping factor for the optical transitions to QW and QD had been determined. The lifetime of charge carriers on quantum dots varies in the range of 0.04–0.1 ps, while the radiative lifetime of excitons in quantum wells in the considered structure is around 2 ps.     

Antiresonance of electron tunneling through a four-quantum-dot ring with two side-coupled quantum dots

Making use of the equation of motion method and Keldysh Green function technique, we obtain the current formula for a two-terminal four-quantum-dot-ring with two side-coupled quantum dots under a DC bias voltage. Antiresonance and resonance of electron tunneling is studied by numerical calculations. Only when the quantum dots in the ring has the same single electron energy level with that of the side-coupled quantum dots, i.e. and both side-coupling are turned on at the same time, the antiresonance appear exactly at ε₀.     

Solitary wave propagation in quantum electron-positron plasmas

Existence of large amplitude stationary solitary wave structures in an unmagnetized electron-positron (e-p) plasma is studied using a quantum hydrodynamic (QHD) model that includes the quantum force (tunnelling) associated with the Bohm potential and the Fermi-dirac pressure law. It is found that in a quasi-neutral pair (e-p) plasma, where the dispersion is only due to the the quantum tunnelling effects, the large amplitude stationary solitary structure exists only when the normalized Mach speed,M <√2. Such solitary structures do not exist in absence of the Bohm potential term in an unmagnetized quasineutral pair (e-p) plasma. The system is shown to support only rarefactive stationary solitary waves. For such waves the amplitude, being independent of the quantum parameter H (the ratio of the electron plasmon to electron Fermi energy), decreases with the Mach number M, whereas the width increases with both M and H. The present theory is applicable to analyze the formation of localized coherent solitary structures at quantum scales in dense astrophysical objects as well as in intense laser fields.     

Sunlight assisted photodegradation by tin oxide quantum dots

Rutile phase of SnO₂ quantum dots of average size of 2.5 nm were synthesized at a growth temperature of 70 °C and characterized with XRD, TEM, FTIR and Raman analysis. The effective strain within the lattice of SnO₂ quantum dots was calculated by Williamson–Hall method. The broad peaks in XRD as well as Raman spectra and the presence of Raman bands at 569 and 432 cm⁻¹ are due to lower crystallinity of nanoparticles. The optical band gap of SnO₂ quantum dots was increased to 3.75 eV attributed to the quantum size effect. SnO₂ quantum dots were annealed in air atmosphere and the crystallite size of the particles increased with annealing temperature. Sunlight assisted photodegration property of SnO₂ quantum dots was investigated with vanillin as a model system and it shows the photodegradation efficiency of 87%. The photoluminescence and photodegradation efficiency of nanocrystallite SnO₂ decreases with increase of crystallite size contributed to the reduction in population of defects and surface area.     

Reasons of emission inhomogeneity in InAs quantum dot structures

The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In_0.15Ga_0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In_0.15Ga_0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 ^°C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.     

Resonant photocurrent-spectroscopy of individual CdSe quantum dots

Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.