Transport in fullerene device coupled to Cu,Ag and Au electrodes

We present an ab initio approach of the electronic transport through a single molecular junction based on C₂₀ fullerene. The electronic properties of a single molecular junction constrained within two semi-infinite metallic electrodes are largely affected by the choice of electrode material. The two-probe device formed by the mechanically control break technique has been modelled with three distinct electrode materials from group IB of the periodic table, namely copper, silver and gold. The quantum characteristics of these mechanically stable devices are obtained by utilising first-principle density functional theory together with non-equilibrium green function method. We evaluate the quantum characteristics, namely density of states, transmission spectrum, energy levels, current and conductance, which essentially determine the behaviour of a molecule linked to different electrodes. Our investigation concludes that copper, silver and gold electrode configuration in conjunction with C₂₀ fullerene behaves as metallic, non-metallic and semi-metallic in nature, respectively.     

Ab initio study of transport properties of an all-carbon molecular switch based on C20 molecule

Choosing closed-ended armchair (5, 5) single-wall carbon nanotubes (CCNTs) as electrodes, we have investigated the electron transport properties across a carbon molecular junction consisting of a C₂₀ molecule sandwiched between two semi-infinite carbon nanotubes. It is shown that the Landauer conductance of this carbon hybrid system can be tuned within several orders of magnitude not only by varying the tube-C₂₀ distance, but more importantly by changing the orientation of the C₂₀ molecule and rotating the C₂₀ molecule or one of the tubes around the symmetry axis of the system at fixed distances. This fact could make this all-carbon molecular system a possible candidate for a nano-electronic switching device. Moreover, our study also reveals that molecular configuration selection and structural relaxation would play an important role in the design of such devices.      

Switching behavior induced by different substituents of group in single molecular device

We investigate the electronic transport properties of photochromic azobenzene-based molecular devices with Au electrodes using non-equilibrium Green’s function and density functional theory. A reversible switching behavior between cis and trans isomerization is found in the device. In addition, the substituent of ?NH₂ on the right end hydrogen atom of azobenzene molecule reduces the switching ratio of current, consequently the disappearance of switching behavior, while the substituent of ?NO₂ improves the switching ratio of current. We discuss the different electronic transport induced by different substituents through the transmission spectra, localized density of states, molecular projected self-consistent Hamiltonian and transmission pathways. The observed polarization effect under bias is explained by the evolution of molecular projected self-consistent Hamiltonian of LUMO level. The results indicate that the electron-withdrawing group ?NO₂ substituting right terminal hydrogen of azobenzene molecule becomes a candidate for improving the performance of molecular device.     

Na掺杂对C20H20分子的电子输运性质影响

利用第一性原理密度泛函理论和非平衡格林函数方法研究了Na@C₂₀H₂₀分子的电子输运性质. 计算结果显示它的I-V曲线在偏圧 V范围内表现出了较好的线性特性, 出现了明显的负微分电阻现象, 并得到其平衡电导为0.0101G₀. 通过与Li@C₂₀H₂₀分子对比分析, 发现掺杂Na不仅能提高C₂₀H₂₀分子的电子输运能力, 而且 关键词： 20H₂₀分子')" href="#">Na@C₂₀H₂₀分子 电子输运 负微分电阻     

Negative differential resistance in the unsymmetrical C121-based molecular junction

Using first-principles density functional theory and non-equilibrium Green?s function formalism for quantum transport calculation, we have investigated the electronic transport properties of the unsymmetrical C₁₂₁-based molecular junction. Our results show that the current-voltage curve displays a negative differential resistance phenomenon in a certain bias voltage range. The mechanism for the negative differential resistance phenomenon is suggested. The present findings could be helpful for the application of the C₁₂₁ molecule in the field of single molecular devices or nanometer electronics.     

Rectifying properties of a boron/nitrogen-doped C131-based molecular junction: A first-principles study

Using first-principles density functional theory and non-equilibrium Green′s function formalism for quantum transport calculation, we have investigated the electronic transport properties of the boron/nitrogen-doped C₁₃₁-based molecular junction. Our results show that an obvious rectifying behavior is observed. Moreover, the rectifying performance can be tuned by adjusting the doping sites. The mechanism for the rectifying phenomenon is suggested. The present findings could be helpful for the application of the C₁₃₁ molecule in the field of single molecular devices or nanometer electronics.     

The transport properties of the molecular-scale B2C and BC3 electronic devices

The transport properties of the molecular-scale B₂C and BC₃ electronic devices are investigated with an ab initio method combined with a nonequilibrium Green function technique. The effects of different BC graphenes and ribbon lengths on the transport properties of the devices are significant. The results show that the devices with different BC graphenes and sizes have unusual transmission coefficients, which leads to special current transport mechanisms for the devices. Notably, the current strength of the device with the shortest ribbon length is the largest in three B₂C devices, but the current strength of the device with the shortest ribbon length is the smallest for BC₃ device.     

B12N12纳米笼：潜在的二氧化氮检测传感器

利用密度泛函理论通过计算吸附能量、HOMO/LUMO能隙变化、电荷转移、结构扭曲等研究二氧化氮分子在B12N12纳米笼的吸附．此外,通过计算B₁₂N₁₂的电子结合能、Gibbs自由能、态密度和分子表面的静电势研究其稳定性和其它特性．B₁₂N₁₂纳米笼吸附二氧化氮显示三种构型．B₁₂N₁₂团簇的HOMO/LUMO能隙变化对二氧化氮分子的存在非常敏感,从自由团簇的6.84 eV降为NO₂/团簇稳定团簇的3.23 eV．团簇的导电性被极大地提高,表明B₁₂N₁₂纳米簇可能是潜在的二氧化氮气体分子检测传感器.     

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

Based on MoS₂ nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS₂ nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 10⁴, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.     

N24B24分子结的电子传输

利用GW近似和非平衡格林函数结合的方法 研究了耦合到两个金属触点的N₂₄B₂₄分子的电子传输性. 计算结果表明,在单个和多个原子触点的态密度曲线上分别出现四个和三个谐振隧峰. 在I-V特性曲线上出现断路状态和微分负阻效应. 对于一、四、六、八原子的触点在电压分别在 ∓4.5、∓4、∓4.6、∓4.3 V表现出微分负阻效应行为. I-V特性在以低电压断开状态,呈独立的触点类型. I-V曲线取决于触点类型,并且表明N₂₄B₂₄分子呈现半导体的特性.     

Electrical spin transport in a GaAs (110) channel

A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb₂₀Fe₆₂Co₁₈/Ru/Co₄₀Fe₄₀B₂₀ films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb₂₀Fe₆₂Co₁₈ layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.     

First-principles study of the electronic transport properties of a C131 -based molecular junction

Using first-principles density functional theory and the non-equilibrium Green’s function formalism, we have studied the electronic transport properties of the dumbbell-like fullerene dimer C₁₃₁-based molecular junction. Our results show that the current-voltage curve displays an obvious negative differential resistance phenomenon in a certain bias voltage range. The negative differential resistance behavior can be understood in terms of the evolution of the transmission spectrum and the projected density of states with applied bias voltage. The present findings could be helpful for the application of the C₁₃₁ molecule in the field of single molecular devices or nanometer electronics.     

OPE molecular junction as a hydrogen gas sensor

Oligo(phenylene ethynylene) (OPE) molecular junction has been suggested as a H₂ molecule sensor based on calculations using the first principles of density–functional theory and non-equilibrium Green's function. The electronic transport properties of the OPE molecule between two Au electrodes with or without adsorbed H₂ molecules are investigated. Results show that the adsorbed H₂ molecule significantly changes the characteristics of the current–voltage curve of the OPE molecular junction. The pure OPE molecular junction exhibits a significant negative differential resistance, but this kind of phenomenon will disappear or weaken after hydrogen molecules are adsorbed. The conductance of the junction also obviously decreases in the bias range of [−0.4, 0.4] V after adsorbing H₂ molecules. These effects can be used to design a H₂ molecule sensor.     

Molecular electronics and spintronics devices produced by the plasma oxidation of photolithographically defined metal electrode

Tunnel junction based molecular devices, which utilize the two metal electrodes of a metal–insulator–metal tunnel junction as the two electrical leads to connect with molecular channels, can overcome the long standing fabrication challenges for developing futuristic molecular devices. However, producing an ultrathin insulator is the most challenging step in this tunnel junction based molecular device fabrication. A simplified molecular device approach was developed by avoiding the need of depositing a new material on the bottom electrode for growing ultrathin insulator. This paper discusses the new approach for insulator growth by one-step oxidation of a tantalum (Ta) bottom electrode, in the pholithographically defined region, i.e., ultrathin tantalum oxide (TaO _x ) insulator was grown by oxidizing bottom Ta metal electrode itself. Organometallic molecular clusters (OMCs) were bridged across 1–3 nm TaO _x along the perimeter of a tunnel junction to establish the highly efficient molecular conduction channels. OMC transformed the asymmetric transport profile of TaO _x based tunnel junction into symmetric one. A TaO _x based tunnel junction with the top ferromagnetic (NiFe) electrode exhibited the transient current suppression by several orders. Further studies by independent research groups will be needed to strengthen the current suppression phenomenon, and to realize the full potential of TaO _x based molecular devices.     

Multifunctionality for the nanojunction of a rotating p-phenylene vinylene molecule between graphene leads

With the multi-functional molecular device based on graphene nanoribbon being deeply studied in experiment, the zigzag-edged graphene device is still worth to investigate. Employing the ab-initio method, the spin transport properties have been studied for the nanojunctions consisting of a p-phenylene vinylene (PPV) molecule sandwiched between two-probe leads of zigzag-edged graphene nanoribbons (ZGNRs). A series of obvious electromagnetic transmission functionalities, including spin switching, negative differential resistance (NDR), dual spin-filtering, magnetoresistance and spin-diode behaviors, are numerically referred in the proposed molecular junction within spin parallel or antiparallel configurations. The performance of switching and double spin filtering can be explained by the transport spectra or total transmission pathways. Besides, the rectification effect is due to the asymmetry spatial distribution of the local density of states as well as the corresponding coupling between the PPV molecule and leads. It is expected that the designed models can be ideal candidate for future spintronic device.     

Effect of torsion angle on electronic transport through different anchoring groups in molecular junction

By applying nonequilibrium Green's function formalism combined with first-principles density functional theory, we investigate effect of torsion angle on electronic transport properties of 4,^4′-biphenyl molecule connected with different anchoring groups (dithiocarboxylate and thiol group) to Au(111) electrodes. The influence of the HOMO-LUMO gaps and the spatial distributions of molecular orbitals on the quantum transport through the molecular device are discussed. Theoretical results show that the torsion angle plays important role in conducting behavior of molecular devices. By changing the torsion angle between two phenyl rings, namely changing the magnitude of the intermolecular coupling effect, a different transport behavior can be observed in these two systems.     

Effect of carbon nanotubes chirality on the E–C photo-isomerization switching behavior in moelcular device

Applying nonequilibrium Green's function formalism in combination with the first-principles density functional theory, we investigate the electronic transport properties of optical molecular switch based on the fulgide molecule with two different single-walled carbon nanotube (SWCNT) electrodes. The molecule that comprises the switch can convert between E isomer and C isomer by ultraviolet or visible irradiation. Theoretical results show that these two isomers exhibit very different conductance properties both in armchair and zigzag junction, which can realize the on and off states of the molecular switch. Meantime, the chirality of the SWCNT electrodes strongly affects the switching characteristics of the molecular junctions, which is useful for the design of functional molecular devices.     

单硫醇分子结的几何结构和电输运性质:压力效应与末端基团效应

利用杂化密度泛函理论,研究了以甲基、醇基、羧基为末端基团的烷烃硫醇分子与金电极形成分子结的过程,得到了分子结的几何结构与外加压力的关系. 并在此基础上,利用弹性散射格林函数方法研究了烷烃硫醇分子的电输运性质. 研究结果表明,对于C₁₁S分子来说,当两电极距离大于2.1 nm时,该分子结断裂;对于C₁₁SOH和C₁₀SCOOH来说,相应的分子结断裂的电极距离基本相同(2.15 nm). 在相同的外加压力(4.0 nN)下,C_{11关键词： 压力 末端基团 烷烃硫醇分子 电输运性质}     

The Hartree-Fock exchange effect on the CO adsorption by the boron nitride nanocage

We studied the effect of Hartree-Fock (HF) exchange percentage of a density functional on the adsorption properties and electronic sensitivity of the B₁₂N₁₂ nanocluster to CO molecule. It was found that by an increase in the %HF, the LUMO level is nearly constant while the HOMO level is strongly stabilized, expanding the HOMO-LUMO gap (E_g). Also, the volume of the all structures decreased and the sensitivity of the B₁₂N₁₂ is slightly increased to CO molecule. For the pristine B₁₂N₁₂ cluster, the B66 and B64 bonds are about 1.43 and 1.49 Å at 10% HF, and 1.23 and 1.26 Å at 100% HF, respectively. The HF exchange between 10–20% may predict an accurate E_g for the B₁₂N₁₂ system. We concluded that functionals with a large %HF such as M06-HF, and M06-2X may significantly overestimate the E_g, and bond strength. We obtained a parabolic relationship between the %HF and the adsorption energy of CO molecule on the B₁₂N₁₂ cluster. Also, an increase in the %HF predicts a larger charge transfer from the CO molecule to the cage.     

Hydration effect on the electronic transport properties of oligomeric phenylene ethynylene molecular junctions

A first-principles computational method based on the hybrid density functional theory is developed to simulate the electronic transport properties of oligomeric phenylene ethynylene molecular junctions with H₂O molecules accumulated in the vicinity as recently reported by Na {\it et al.} [\wx{Nanotechnology}{18} 424001 (2007)]. The numerical results show that the hydrogen bonds between the oxygen atoms of the oligomeric phenylene ethynylene molecule and H₂O molecules result in the localisation of the molecular orbitals and lead to the lower transition peaks. The H₂O molecular chains accumulated in the vicinity of the molecular junction can not only change the electronic structure of the molecular junctions, but also open additional electronic transport pathways. The obvious influence of H₂O molecules on the electronic structure of the molecular junction and its electronic transport properties is thus demonstrated.