电子束蒸发法在多孔氧化铝膜上制备银纳米点阵列

采用二步阳极氧化法在草酸溶液中制备了高度有序的多孔阳极氧化铝(Porous Anodic Alumina,PAA)薄膜。以多孔氧化铝薄膜为模板,采用真空电子束蒸发的方法在多孔氧化铝模板上制备出了高度有序的金属银纳米点阵列体系。扫描电镜(SEM)测试结果表明,所制备的金属银纳米点阵列与多孔阳极氧化铝膜的多孔阵列具有完全相同的有序结构,阵列中银纳米颗粒的形状接近球形,其直径大约为70nm,与氧化铝模板的孔径基本一致。研究了高度有序银纳米点阵列的形成过程。     

氧化铝模板制备过程中酸性电解液对模板参数的影响

多孔阳极氧化铝模板表面分布有纳米级微孔,其尺寸可调、有序性高,并且制备工艺简单,价格低廉,是合成各种纳米材料的重要方法.本文详细讨论了制备过程中各种实验条件对氧化铝膜参数的影响;给出了制备各种孔径高质量氧化铝模板的最佳实验条件,并对多孔氧化铝模板的应用前景做出了展望.     

刚性衬底上铜铟硒纳米棒阵列的合成与表征

在覆盖有钨电极的硅衬底上利用多孔阳极氧化铝模板为生长掩膜电沉积合成垂直排列的铜铟硒纳米棒阵列. 多孔阳极氧化铝模板由阳极氧化磁控溅射制备的铝膜制成. 扫描电子显微镜结果表明,该纳米棒阵列结构致密,直径约100 nm长度约1μm,纵横比为10. X射线衍射、微区拉曼光谱和高分辨透射电子显微镜结果表明,真空条件下450 oC退火处理的铜铟硒纳米棒是多晶纯相的黄铜矿结构的铜铟硒,在纳米棒轴向方向上有比较大的晶粒尺寸. 能量色散X射线光谱表明,铜铟硒纳米棒的化学组成接近InSe₂的化学计量比,由吸收光谱分析推算铜铟硒纳米棒带隙为0.96 eV.     

金属铜纳米孔洞阵列膜制备方法研究

以多孔阳极氧化铝膜(anodic aluminum oxide，AAO)为模板，用真空蒸镀法复制了金属铜的纳米孔洞阵列膜，SEM结果表明，制备得到的金属铜纳米孔洞阵列膜形貌与AAO膜一致.此方法简单易行，能大规模生产，为纳米膜的工业化复制提供了一种新的工艺，为纳米线、纳米管等纳米阵列材料的合成与组装提供了有利的条件. 关键词： AAO模板 真空蒸镀 金属铜纳米孔洞阵列膜 纳米复制     

利用AAO模板制备银量子点

阳极氧化铝模板(Anodic Aluminum oxide,AAO)是一种具有纳米孔径的透明模板,其孔径在5-200nm范围内可控,孔径大小一致并且分布高度有序。利用阳极氧化铝模板制备量子点具有简单易行,能大规模生产的特点,同时能制备出尺寸大小可控的高度有序的量子点阵,这是其它方法很难做到的,有利于纳米材料及纳米器件的研究与合成。     

含钴阳极氧化铝膜的磁致偏光特性

用电化学法制备了高度有序的多孔阳极氧化铝模板,选用CoSO4溶液为电解液,用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备含钴纳米线有序阵列.分别用扫描电镜(SEM)、X射线衍射仪对多孔阳极氧化铝模板和纳米线阵列的微观形貌和结构进行分析,结果显示阳极氧化铝膜内确有钴生成,且钴纳米线中的晶粒在生长过程中有(100)晶面...     

一种可控纳米柱阵列的研制

在一次阳极氧化法制备多孔氧化铝(anodized aluminum oxide,AAO)的基础上,进行了二次、三次、四次氧化制备AAO,并对多次氧化制备多孔AAO的电流变化曲线和模板表面的形貌特点等进行了比较分析.二次、三次、四次氧化制备的AAO纳米孔孔径依次增大、孔间距减小,而模板表面的纳米孔有序性分布没有明显变化.控制一次氧化AAO模板的除膜时间,～10 min即可得到孔径规则、高度有序的AAO膜.最后,利用所制备的不同孔深和孔径的AAO为模板,通过热纳米压印复制技术制备了长度和直径等性质可控的PMMA纳米柱阵列. 关键词： 纳米柱阵列 聚甲基丙烯酸甲酯 多孔氧化铝模板 多次氧化法     

铜钴合金纳米有序阵列的光学特性

用电化学法制备了高度有序的多孔阳极氧化铝模板, 选用CoSO4和CuSO4的混合溶液为电解液,用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备铜钴合金纳米线有序阵列.分别用扫描电镜(SEM),X 射线衍射仪(XRD)对多孔氧化铝模板和纳米线阵列的微观形貌和结构进行分析.结果显示,制备的合金纳米线表面光滑、均匀,纳米线中的晶粒在长过程中有(111) 晶面的择优取向.用UV3101分光光度计测试了铜钴合金多孔铝复合结构的透射光谱及偏振光谱表明,合金纳米复合结构在可见及近红外波段具有良好的透射比和消光比;铜钴合金纳米复合结构的确能够改善单一金属的特性,比如在近红外光区,其消光比(30 dB)优于铜纳米复合结构(17 dB).     

罗丹明6G在银纳米线阵列上的SERS光谱研究

制备出有序、均匀的活性衬底一直足表面增强拉曼散射(SERS)研究中的关键.阳极氧化法制备的多孔氧化铝膜的结构有序、均匀,为纳米金属SERS基底的制备提供了模板.以沉积了银的多孔氧化铝组装体为衬底,研究了罗丹明6G(Rh6G)分子的表面增强拉曼散射光谱.结果表明,沉积了银的多孔氧化铝模板是很好的SERS衬底,Rh6G分子在此衬底上的SERS谱强度与银纳米线在表面的显露高度有关,而其拉曼频移未受表面状态的影响,而PO43-离子的存在使SERS强度得到很大提高.     

电沉积制备磁性纳米线的研究进展

多孔阳极氧化铝为模板制备纳米结构材料具有独特的优越性,颇受人们的关注,近年来获得了深入的研究.文章介绍了用电化学沉积方法制备一维磁性纳米线的最新研究进展,阐述了各种结构磁性纳米线,包括单质、合金、多层、超晶格磁性纳米线的研究现状,展望了磁性纳米线的研究方向和在高密度垂直磁记录与巨磁电阻等方面的应用前景.     

Synthesis and characterization of highly-ordered barium-strontium titanate nanotube arrays fabricated by sol—gel method

Highly uniformed barium-strontium titanate nanotube arrays were fabricated using a porous anodic aluminum oxide template from a barium-strontium titanate sol--gel solution. Electron microscope results showed that nanotubes with uniform length and diameter were obtained. The diameters and lengths of these nanotubes were dependent on the pore diameter and the thickness of the applied anodic aluminum oxide template. High resolution transmission electron microscopy and the selected-area electron diffraction pattern investigations demonstrated the perovskite structure and the polycrystalline of the fabricated barium-strontium titanate nanotubes. The characterization of the electrical and dielectric properties had also been made. Compared to thin film material, the intrinsic leakage current density is almost the same. Besides, at 30~℃, the dielectric constant and dielectric loss of the fabricated nanotube is 80 and 0.027 at 1~MHz respectively.     

Electrodeposition and magnetic properties of Ni nanowire arrays on anodic aluminum oxide/Ti/Si substrate

Ni nanowire arrays with different diameters have now been extended to directly fabricate in porous anodic alumina oxide (AAO) templates on Ti/Si substrate by direct current (DC) electrodeposition. An aluminum film is firstly sputter-deposited on a silicon substrate coated with a 300 nm Ti film. AAO/Ti/Si substrate is synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow Ni nanowire arrays with different diameters. The coercivity and the squareness in parallel direction of Ni nanowires with about 10 nm diameters are 664 Oe and 0.90, respectively. The Ni nanowire arrays fabricated on AAO/Ti/Si substrates should lead to practical applications in ultrahigh-density magnetic storage devices because of the excellent properties.     

Dielectric properties of anodic films on sputter-deposited Ti-Si porous columnar films

For electrolytic capacitor application of the single-phase Ti alloys containing supersaturated silicon, which form anodic oxide films with superior dielectric properties, porous Ti-7 at% Si columnar films, as well as Ti columnar films, have been prepared by oblique angle magnetron sputtering on to aluminum substrate with a concave cell structure to enhance the surface area and hence capacitance. The deposited films of both Ti and Ti-7 at% Si have isolated columnar morphology with each column revealing nanogranular texture. The distances between columns are ∼500 nm, corresponding to the cell size of the textured substrate and the gaps between columns are 100-200 nm. When the porous Ti-7 at% Si film is anodized at a constant current density in ammonium pentaborate electrolyte, the growth of a uniform amorphous oxide film continues to ∼35 V, while it is limited to less than 6 V on the porous Ti film. The maximum voltage of the growth of uniform amorphous oxide films on the Ti-7 at% Si films is similar for both the flat and porous columnar films, suggesting little influence of surface roughness on the amorphous-to-crystalline transition of growing anodic oxide under the high electric field. Due to the suppression of crystallization to sufficiently high voltages, the anodic oxide films formed on the porous Ti-7 at% Si film shows markedly improved dielectric properties, in comparison with those on the porous Ti film.     

高质量多孔氧化铝模板的制备

在草酸电解液中研究了阳极氧化法制备多孔氧化铝模板(AAO模板)。采用场发射扫描电子显微镜对多孔模板的形貌进行表征,结果表明:模板孔的分布均匀有序,孔径在40~70 nm;电解液浓度、氧化电压、氧化温度和氧化时间都会影响模板的形态;不经过高温退火及抛光也可以制得规则排布的多孔AAO模板。X射线衍射分析表明:氧化铝膜的主要成分为非晶态Al2O3。     

多孔CeO2膜的制备及其光谱性能

以铈箔为原料,采用阳极氧化法和热处理法制备多孔的CeO₂膜。将阳极氧化铈膜分别在400,500和800 ℃下进行热处理,分别研究阳极氧化铈膜的晶体结构、组成和表面形貌,分别研究多孔的CeO₂膜红外光谱特征吸收和热膨胀性能。阳极氧化铈膜是Ce(OH)₃,CeF₃,Ce₂O₃,CeO₂和Ce的混合膜,并吸附水和乙二醇,其中Ce(OH)₃,CeF₃,Ce₂O₃分别为六方晶型结构,CeO₂和Ce分别为立方晶型结构。阳极氧化铈膜中的Ce(OH)₃,Ce₂O₃和Ce分别在400和500 ℃进行热处理时可能分别转变为CeO₂,分别在400和500 ℃热处理后的膜为CeF₃和CeO₂的混合膜。阳极氧化铈膜中的Ce(OH)₃,CeF₃,Ce₂O₃和Ce在800 ℃进行热处理时可能分别转变为CeO₂,在800 ℃热处理后的膜为CeO₂膜。该CeO₂膜是多孔的膜,且孔为直孔,在1 600～4 000 cm-1范围内具有强吸收。该CeO₂膜在170～900 ℃范围内热膨胀系数变化不大,该膜的热稳定性较好。     

Synthesis of Y-junction carbon nanotubes within porous anodic aluminum oxide template

Y-junction carbon nanotubes with the average diameter about 200 nm were successfully synthesized within porous anodic aluminum oxide template, which was prepared by anodic anodizing aluminum sheet in 1.0 mol/l H₃PO₄ solution at a constant anodization voltage 90 V.     

Synthesis and Optical Properties of Films Formed by the Sol‐Gel Method in Mesoporous Matrices

The main laws governing the formation of films by the solgel method in the mesopores of anodic aluminum oxide, porous silicon, and synthetic opals have been considered. Investigations of the luminescence at 1.5 m in the structure porous silicon–gel, doped with erbium, have been analyzed. Special features of the synthesis of the film structure microporous xerogel–mesoporous anodic aluminum oxide, doped with erbium, terbium, and europium, and the possible factors that enhance the photoluminescence of lanthanides in the structure are shown.     

Luminescence properties of anodic aluminum oxide films with organic luminophores embedded into pores

Luminescence properties of porous anodic aluminum oxide films formed in a 0.6 M solution of citric acid and luminescence of paraterphenyl, perylene, coumarin 7, and rhodamine 6G dyes adsorbed by the films are investigated. The nature of emitting centers in anodic aluminum oxide is revealed. Intense photoluminescence of all tested dyes embedded into pores of anodic aluminum oxide has been found. A redshift of fluorescence spectra of dyes adsorbed by the matrix and emergence of an additional longwave band have been detected. Data obtained can be used in developing new thin-film luminescent coatings for future applications in optoelectronics and molecular electronics. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 4, pp. 483–488, July–August, 1997.     

Fabrication of self-ordered nanohole arrays on Si by localized anodization and subsequent chemical etching

Nanohole arrays with a 60 nm hole periodicity were fabricated on a Si substrate by the anodization of an aluminum film sputtered on a Si substrate in sulfuric acid and subsequent chemical etching. The transfer of the nanoporous pattern of anodic alumina into the Si substrate was achieved by the selective removal of silicon oxide, which was produced by the anodic oxidation of the underlying Si substrate through the anodic porous alumina used as a mask.