Fabrication and magnetic properties of Fe3O4 nanowire arrays in different diameters

Fe₃O₄ nanowire arrays with different diameters of D=50, 100, 150 and 200 nm were prepared in anodic aluminum oxide (AAO) templates by an electrodeposition method followed by heat-treating processes. A vibrating sample magnetometer (VSM) and a Quantum Design SQUID MPMS magnetometer were used to investigate the magnetic properties. At room temperature the nanowire arrays change from superparamagnetism to ferromagnetism as the diameter increases from 50 to 200 nm. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurements show that the blocking temperature T_B increases with the diameter of nanowire. The ZFC curves of D=50 nm nanowire arrays under different applied fields (H) were measured and a power relationship between T_B and H were found. The temperature dependence of coercivity below T_B was also investigated. Mössbauer spectra and micromagnetic simulation were used to study the micro-magnetic structure of nanowire arrays and the static distribution of magnetic moments of D=200 nm nanowire arrays was investigated. The unique magnetic behaviors were interpreted by the competition of the demagnetization energy of quasi-one-dimensional nanostructures and the magnetocrystalline anisotropy energy of particles in nanowires.     

Template preparation of Pt nanowire array electrode on Ti/Si substrate for methanol electro-oxidation

Platinum (Pt) nanowire array electrode is obtained by dc electrodeposition of Pt into the pores of anodic aluminum oxide (AAO) template on Ti/Si substrate. Transmission electron microscope (TEM) examination shows all the nanowires have uniform diameter of about 30 nm. The brush shapes Pt nanowire array electrode can be seen clearly by field emission scanning electron microscope (FESEM). Pt nanowire array electrode gives the X-ray diffraction (XRD) pattern of face-centered cubic (fcc) crystal structure. The electro-oxidation of methanol on this electrode is investigated at room temperature by cyclic voltammetry. The results demonstrated that the Pt nanowire array electrode will have good potential applications in portable power sources.     

Synthesis and magnetic properties of ordered barium ferrite nanowire arrays in AAO template

BaFe₁₂O₁₉ nanowire arrays having single magnetic domain size (≤460 nm) in anodic aluminum oxide (AAO) templates were prepared by sol-gel and self-propagating high-temperature synthesis techniques. The diameter of the nanowire arrays is approximately 70 nm and the length is about 2-4 μm. The specimens were characterized using X-ray diffraction, vibrating sample magnetometer, field emission scan electron microscope, atomic force microscopy and microwave vector network analyzer. The magnetic properties of BaFe₁₂O₁₉ nanowire arrays embedded in AAO templates were measured by VSM with a field up to 1274 KA/m at room temperature. The results indicate that the nanowire arrays exhibit large saturation magnetization and high coercivity in the range of 6000 Oe and an obvious magnetic anisotropy with the easy magnetizing axis along the length of the nanowire arrays, probably due to the shape anisotropy and magneto-crystalline anisotropy. Finally the microwave absorption properties of the nanowires were discussed.     

Direct imprinting of ordered and dense TiO2 nanopore arrays by using a soft template for photovoltaic applications

Highly ordered and dense TiO₂ nanopore arrays are directly nanoimprinted on a transparent conductive glass substrate by using a polymethylmethacrylate/polydimethylsiloxane (PMMA/PDMS) composite soft template, which is replicated from an anodic aluminum oxide (AAO) replica mold. Results indicate that heat infiltration under vacuum conditions can ensure complete filling of PMMA into the AAO pores, and that free-standing PMMA nanorods with an aspect ratio more than 5 can be obtained by adjusting the AAO pore depth based on a freeze-drying technique. TiO₂ nanopore arrays with different diameters from 30 to 300 nm and inter-pore distances between 70 and 450 nm can be easily fabricated by using the corresponding templates with different sizes. Preliminary solar cells are also assembled with a heterojunction of conjugated polymer/TiO₂ nanopore arrays. Results indicate that the construction of poly-(3-hexylthiophene) (P3HT)/TiO₂ nanopore arrays can be more helpful in quenching the PL emission of P3HT than that of P3HT/flat TiO₂ film, and a maximum efficiency of about 0.32% can be obtained for a photovoltaic device with a TiO₂/[6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM)/P3HT structure.     

Synthesis and magnetic properties of spinel CoFe2O4 nanowire arrays

Spinel CoFe₂O₄ nanowire arrays were synthesized in nanopores of anodic aluminum oxide (AAO) template using aqueous solution of cobalt and iron nitrates as precursor. The precursor was filled into the nanopores by vacuum impregnation. After heat treatment, it transformed to spinel CoFe₂O₄ nanowires. The structure, morphology and magnetic properties of the sample were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). The results indicate that the nanowire arrays are compact. And the individual nanowires have a high aspect ratio, which are about 80 nm in diameter and 10 μm in length. The nanowires are polycrystalline spinel phase. Magnetic measurements indicate that the nanowire arrays are nearly magnetic isotropic. The reason is briefly discussed. Moreover, the temperature dependence of the coercive force of the nanowire arrays was studied.     

The effect of structure on magnetic properties of Co nanowire arrays

Co nanowire arrays with three typical diameters of 20, 50 and 120 nm have been fabricated into anodic alumina oxide templates using an ac electrodeposition method. It is found that the crystal texture of the Co nanowires depends on the pH value of the deposition electrolyte. X-ray diffraction results show that the (1 0 0) texture appears at pH 6.2, while the diffraction peaks of (1 0 0) and (1 0 1) appear at pH 6.4 with the diameter of 20 nm. In addition, the (0 0 2), (1 0 0) and (1 0 1) peaks appear with an increase of pH value for the nanowire arrays with diameters of 50 and 120 nm, respectively. Magnetic measurements indicate the effect of structure on the magnetic properties of the nanowire arrays, which depend strongly on the different diffraction peaks, as adjusted by the pH value.     

Dielectric properties of anodic films on sputter-deposited Ti-Si porous columnar films

For electrolytic capacitor application of the single-phase Ti alloys containing supersaturated silicon, which form anodic oxide films with superior dielectric properties, porous Ti-7 at% Si columnar films, as well as Ti columnar films, have been prepared by oblique angle magnetron sputtering on to aluminum substrate with a concave cell structure to enhance the surface area and hence capacitance. The deposited films of both Ti and Ti-7 at% Si have isolated columnar morphology with each column revealing nanogranular texture. The distances between columns are ∼500 nm, corresponding to the cell size of the textured substrate and the gaps between columns are 100-200 nm. When the porous Ti-7 at% Si film is anodized at a constant current density in ammonium pentaborate electrolyte, the growth of a uniform amorphous oxide film continues to ∼35 V, while it is limited to less than 6 V on the porous Ti film. The maximum voltage of the growth of uniform amorphous oxide films on the Ti-7 at% Si films is similar for both the flat and porous columnar films, suggesting little influence of surface roughness on the amorphous-to-crystalline transition of growing anodic oxide under the high electric field. Due to the suppression of crystallization to sufficiently high voltages, the anodic oxide films formed on the porous Ti-7 at% Si film shows markedly improved dielectric properties, in comparison with those on the porous Ti film.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Carbon nanodot arrays grown as replicas of specially widened anodic aluminum oxide pore arrays

Via a specially widened anodic aluminum oxide (AAO) pore arrays, carbon nanodot arrays with uniform size and high density were obtained through filtered cathodic arc plasma (FCAP) technique. The AAO template was prepared in oxalic acid by multi-steps to get a specially enlarged opening which plays an important role in the deposition of nanodots. The morphology of the nanodots was studied by a field emission scanning electron microscopy (FESEM). The diameter of the as-prepared nanodot demonstrated here is about 100 nm at the bottom and less than 40 nm at the top, and the density was estimated to 10¹⁰ cm⁻². Field emission properties of the nanodot arrays were investigated and a low threshold field of 5.1 V/μm at 10 mA/cm² was obtained. In this paper, the carbon nanodot arrays grown as replicas of the specially widened AAO template may support a strategy to realize the fabrication of nanodot arrays with various materials.     

Study of Ni/Si(1 0 0) solid-state reaction with Al addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni_xAl_y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed.     

Fabrication of self-ordered nanohole arrays on Si by localized anodization and subsequent chemical etching

Nanohole arrays with a 60 nm hole periodicity were fabricated on a Si substrate by the anodization of an aluminum film sputtered on a Si substrate in sulfuric acid and subsequent chemical etching. The transfer of the nanoporous pattern of anodic alumina into the Si substrate was achieved by the selective removal of silicon oxide, which was produced by the anodic oxidation of the underlying Si substrate through the anodic porous alumina used as a mask.     

Large-area silica nanotubes with controllable geometry on silicon substrates

The synthesis of a highly uniform, large-scale nanoarrays consisting of silica nanotubes above embedded nanohole arrays in silicon substrates is demonstrated. In situ anodized aluminium oxide (AAO) thin film masks on Si substrates were employed, and the nanotubes were fabricated by Ar ion milling through the masks. The geometries of the nanoarrays, including pore diameter, interpore distance and the length of both nanopores and nanotubes could be controlled by the process parameters, which included that the outer pore diameter of silica tube was tuned from ∼80 nm to ∼135 nm while the inner tube diameter from ∼40 nm to ∼65 nm, the interpore distance of the nanotube arrays was from 100 nm to 180 nm and the length of silica tube changed from ∼90 nm to ∼250 nm. The presented nanostructure fabrication method has strong potential for application in intensity and frequency adjustable high luminescence efficiency optoelectronic devices.     

Properties of Cu film and Ti/Cu film on polyimide prepared by ion beam techniques

Cu film and Ti/Cu film on polyimide substrate were prepared by ion implantation and ion beam assisted deposition (IBAD) techniques. Three-dimension white-light interfering profilometer was used to measure thickness of each film. The thickness of the Cu film and Ti/Cu film ranged between 490 nm and 640 nm. The depth profile, surface morphology, roughness, adhesion, nanohardness, and modulus of the Cu and Ti/Cu films were measured by scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindenter, respectively. The polyimide substrates irradiated with argon ions were analyzed by scanning electron microscopy (SEM) and AFM. The results suggested that both the Cu film and Ti/Cu film were of good adhesion with polyimide substrate, and ion beam techniques were suitable to prepare thin metal film on polyimide.     

Fabrication and field emission properties of multi-walled carbon nanotube/silicon nanowire array

Silicon nanowire (SiNW) arrays were fabricated on silicon wafers by the metal-assisted chemical etching method. Varied average diameters of SiNW arrays were realized through further treatment in a mixed agent of HF and HNO₃ of certain concentrations. After the treatment, there were more than 93% SiNWs with diameters smaller than 100 nm. The tip of each SiNW was subsequently wrapped with multi-walled carbon nanotubes (MWCNTs) with chemical vapor deposition method. The as-fabricated MWCNT/SiNW arrays were fabricated into electric field emitters, with turn-on field of 2.0 V/μm (current density: 10 μA/cm²), much lower than that of SiNW array (5.0 V/μm). The turn-on electric field of MWCNT/SiNW array decreased with the decreasing of the average diameter of SiNWs, indicating the performance of the field emission is relative to the morphology of SiNWs. As the SiNW array is uniform in height and easy to fabricate, the MWCNT/SiNW array shows potential applications in flat electric display.     

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Ba(Zr_0.05Ti_0.95)O₃ (BZT) thin films grown on Pt/Ti/SiO₂/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO₂/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.     

Fabrication and magnetic properties of Ni-Zn nanowire arrays

Ni-Zn nanowire arrays, with diameters of approximately 60 nm and lengths of around 40 μm, were fabricated by electrodeposition in porous anodic aluminum oxide templates at different electric potentials. X-ray diffraction observations demonstrated that the isolated nanowires had polycrystalline structure and that their phases changed with the deposition potential. The amount of deposited zinc in the nanowires increased with the deposition potential, whereas the amount of nickel decreased. Magnetic measurements showed that there was a gradual change of magnetism from isotropic to anistropic with increasing potential amplitude and that the coercivity reached a maximum value in the nanowire deposited at −1.35 V.     

Field emission properties of carbon nanotubes grown on silicon nanowire arrays

Carbon nanotubes are synthesized on the silicon nanowire arrays which are fabricated on silicon substrate by chemical vapor depositing SiCl₄ and H₂ gases in the presence of Au catalysts. The silicon nanowires are single-crystal with lengths up to 100 μm and diameters ranging from 50 to 500 nm. The tangled carbon nanotubes are grown directly from the surface of Si nanowires. The field emission properties of the carbon nanotubes are investigated at the gap of 200 μm. The low turn on and threshold fields are obtained. The stabilization of the emission currents is also presented.     

Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator

In order to evaluate the strain stability, arrays of strained Si/SiGe nano-stripes and nano-pillars were fabricated by Electron-Beam Lithography (EBL) and Reactive-Ion Etching (RIE). The strain relaxation in the patterned strained Si on SiGe-on-insulator (SGOI) was investigated by high-resolution UV micro-Raman spectroscopy. The Raman measurements before and after patterning indicate that most of the strain in the top strained Si is maintained until scaling down to 300 nm, and relaxation of <15% is observed in pillars with a dimension of 150 nm × 150 nm. In the nano-patterned heterostructure strained Si/SiGe, the observed relaxation is small, which is mainly attributed to the fully relaxed and dislocation-free SiGe virtual substrate fabricated by modified Ge condensation.     

Fabrication of Anodic Aluminum Oxide Templates with Small Interpore Distances

The influence of the electropolishing and anodization voltage on surface morphology has been carefully studied for fabrication of ordered anodic aluminum oxide （AAO） templates. In accordance with that in the anodization experiment, the size of small patterns on the foil surface formed from the electropolishing treatment increases with voltage. Using a combined method of small-voltage eleetropolishing and anodization, we have fabricated well ordered templates with much smaller interpore distances compared with that under normal-voltage fabrication conditions. The Ni nanowire arrays with two small diameters are eleetrodeposited through the above templates, exhibiting different magnetic properties. This also helps us to clarify the inner structure of this kind of templates.