TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

Y12TM（TM=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn）团簇的电子结构与磁性研究

基于第一性原理,在密度泛函理论框架下,用广义梯度近似(GGA)研究了二十面体Y12TM(TM=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn)团簇的电子结构和磁性,计算了它们的束缚能(BE)、中心原子到表面原子的间距、最高占据轨道(HOMO)、最低占据轨道(LUMO)及其能隙.研究表明:Y13、Y12Sc、Y12Ti、Y12V、Y12Cr团簇的主体原子和杂质原子呈现出铁磁性作用,而Y12Mn、Y12Fe、Y12Co、Y12Ni、Y12Cu、Y12Zn团簇的主体原子和杂质原子呈现出反铁磁作用.     

内掺过渡金属非典型富勒烯M@C22(M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni) 几何结构、电子结构、稳定性和磁性的密度泛函研究

采用密度泛函理论中广义梯度近似对非典型富勒烯C₂₂和过渡金属内掺衍生物M@C₂₂(M=Sc,Ti,V,Cr,Mn,Fe,Co和Ni)的几何结构和电子结构进行计算研究.发现非典型富勒烯C₂₂的基态结构是含有一个四碳环的单重态笼状结构.过渡金属原子的掺入明显提高了体系的稳定性. C-M键既有一定共价性又有一定离子性.磁性、能级图、轨道分布和态密度图分析表明: M原子的3d轨道和碳笼的C原子的原子轨道之间存在较强的轨道杂化. Ti, Cr, Fe和Ni内掺的结构出现磁性完全猝灭现象. Sc和碳笼间是弱反铁磁作用, V,Mn和Co与碳笼间是弱铁磁作用.     

M@C_(20)H_(20)(M=Sc,V,Cr,Mn,Fe,Co,Ni)几何结构和电子性质的理论研究

采用密度泛函理论(DFT)中的广义梯度近似(GGA)方法对M@C_(20)H_(20)(M=Sc,V,Cr,Mn,Fe,Co,Ni)几何结构和电子性质进行了计算研究.几何结构优化发现,过渡金属原子M内掺到C_(20)H_(20)笼时,都稳定于碳笼中心.能隙和内掺能计算发现,M@C_(20)H_(20)的热力学稳定性随着M原子序数的增大而逐渐减弱,内掺M原子使得其动力学稳定性大幅度下降,但是其中Ni@C_(20)H_(20)结构仍然具有良好的热力学和动力学稳定性,其有望在实验中被成功合成出来.电子性质研究发现,随着M原子序数的逐渐增大,M原子对M@C_(20)H_(20)前线轨道的贡献也越来越大,M@C_(20)H_(20)(M=Sc,V,Cr,Mn,Fe,Co)都具有一定的磁矩,而Ni@C_(20)H_(20)为闭壳层结构,磁矩为零.     

密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性(Ih、Oh、D5h、D3h)密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12 X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn)掺杂团簇的结构及磁性.结果表明:除Al12 Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12 Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应.     

3d过渡金属元素掺杂Al12N12纳米线几何结构和电子性能的第一性原理研究

基于密度泛函理论的第一性原理计算方法,系统地研究了不同3d过渡金属元素(Sc、Ti、V、Cr、Mn、Fe、Co和Ni)掺杂Al₁₂N₁₂纳米线的几何结构、稳定性和电子结构.结果表明：所有掺杂体系均是热力学稳定的;掺杂Ni时体系保留了原有的非磁性间接带隙半导体特性;当掺杂其它原子(Sc、Ti、V、Cr、Mn、Fe、Co)时体系仍然保持为半导体,但带隙明显减小.掺杂过渡金属原子对于Al₁₂N₁₂纳米线的电子结构具有明显的调控作用,在能带调控和光电方面有潜在的应用前景.     

密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性（Ih、Oh、D5h、D3h）密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn）掺杂团簇的结构及磁性．结果表明：除Al12Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应．     

F原子吸附TiO_2:Mn(001)稀磁半导体薄膜电子结构和磁性的第一性原理计算

利用第一性原理方法计算Mn离子掺杂纯净TiO2(001)和F原子吸附的TiO2(001)薄膜的形成能、态密度和磁矩.F原子吸附明显降低TiO2∶Mn薄膜体系的形成能.F原子的吸附导致Mn离子的磁矩减小,而表面O原子的磁矩增大.表面O原子的磁矩主要来源于O原子p x和p y轨道的自旋极化,研究表明表面吸附F原子更有利于Mn离子的掺杂,在一定程度上有利于获得结构稳定的铁磁态半金属特性的TiO2∶Mn薄膜.     

非晶态合金FeTmB的磁矩和居里温度

本文系统地报道单辊液淬方法制备FeTmB(Tm=Ti,V,Cr,Mn,Zr,Nb,Mo,Ta,W)非晶态合金的磁性,讨论了3d,4d,5d元素的加入对非晶态FeB合金的磁矩和居里温度的影响。实验结果表明在非晶态FeTmB合金系中Fe原子磁矩都在2.0μ_B左右。Tm原子在非晶态Fe基合金中比在相应的晶态合金中显示更强的局域特性。Tm原子的磁矩与元素的外层电子数有关,IVB(Ti),VB(V),VIB(Cr),VIIB(Mn)族原子的磁矩分别约为4,5,4,3μ_B,Tm的磁矩与铁原子磁矩反平行耦合。合金磁矩随Tm含量的变化率dμ/dx与混合模型的计算值相符合。用虚拟束缚态讨论,得到IVB(Ti),VB(V)族元素的虚拟束缚态在费密面以上,VIB(Cr),VIIB(Mn)族元素的虚拟束缚态与费密面交迭。 关键词：     

MnSb/GaSb(001)界面半金属特性的第一性原理研究

利用密度泛函理论计算六角NiAs型和立方闪锌矿型MnSb的电子和电磁特性,研究闪锌矿MnSb与GaSb(001)界面,并采用广义渐变近似计算了交换-相关项．闪锌矿结构的MnSb具有半金属铁磁特性,单分子磁矩4μB,MnSb/GaSb(001)界面同样具有半金属特性．界面中Mn原子的磁矩减小,界面中Sb原子磁矩等于两个相应界面磁矩的平均值．另外计算了能带排列在异质结中价带偏移大约1.25 eV.     

Chemically driven diffusion of Pd in the surface region of Zn(0001): An ultraviolet photoemission investigation

The diffusion of deposited Pd through the (0001) surface region of zinc has been studied with photoemission at hν = 21.2 eV by following the time evolution of the Zn 3d and Pd 4d peaks for a Pd initial coverage of 1, 3, 10 and 15 monolayers. The time decay of the Pd 4d signal is explained with a model where the diffusion coefficient D is not constant; it is (4.6 ± 0.5) × 10^?19 cm² s^?1 for t?7000s, then decreases to (5.5 ± 1) × 10^?20 cm² s^?1 for t ? 15,000 s. The D values correlate well with the spectroscopic results on the valence state evolution during diffusion. At short times (higher D) the spectra show an electron energy gain of Pd atoms during diffusion while at higher time (lower D) this gain is negligible. The initial diffusion is chemically driven while at longer times the diffusion becomes gradually entropic.     

The evolution of electronic configuration and magnetic characterization of Fe<Subscript>9</Subscript>Ni<Subscript>1</Subscript>, Fe<Subscript>8</Subscript>Ni<Subscript>2</Subscript> alloy in theoretical calculation

To analyze the origin of the magnetic enhancement of Fe-Ni alloy, the electronicconfigurations and magnetic properties were investigated using density functional theorybased on the first-principle. The supercell (5 × 1 × 1) of Fe,Fe₉Ni₁ and Fe₈Ni₂ were constructed. Thedefect formation energy, band structure, density of states and electron density differencewere calculated. The results showed that Ni doping changed the electronic configuration ofFe atoms, resulting in the enhancement of spin polarization of Fe and the larger Bohrmagnetic moment in Fe-Ni alloys (Fe₉Ni₁). The results showed thatthe charge transfer and the atomic spacing between Fe atoms and the dopant Ni atoms playedan important role in determination of magnetic moment. The value of Fe supercell(5 × 1 × 1), Fe₉Ni₁ and Fe₈Ni₂ were 23.14,23.34 and 22.61μ _B, respectively.     

不同温度下Si(001)表面各种亚稳态结构的分子动力学模拟

采用Stillinger-Weber势对不同温度下解理Si(001)表面的原子几何结构进行等温分子动力 学模拟.模拟结果表明Si(001)表面除主要的p(2×1)结构之外，较低温度下还会有双悬挂键 的单原子结构存在；较高温度下表面还会存在c(2×2)和三聚体等亚稳态结构；接近表面熔 化温度时，双悬挂键单原子、c(2×2)和三聚体等亚稳态结构都消失，表面只存在稳定的p(2 ×1)结构. 关键词： 分子动力学模拟 表面结构 Si(001)表面 Stillinger-Weber势     

Structural and phase transformations during initial stages of copper condensation on Si(001)

Auger-electron spectroscopy, electron-energy loss spectroscopy, low-energy electron diffraction, and atomic-force microscopy are employed to investigate the growth mechanism, composition, structural and phase states, and morphology of Cu films (0.1–1 nm thick) deposited on a Si(001)-2 × 1 surface at a lower temperature of Cu evaporation (900°C) and room temperature of a substrate. The Cu film phase is shown to start growing on the Si(001)⁻² × 1 surface after three Cu monolayers (MLs) are condensed. It has been revealed that atoms of Cu and Si(001) are mixed, a Cu₂Si film phase is formed, and, thereafter, Cu₃Si islands arise at a larger coating thickness. Annealing of the first Cu ML leads to reconstruction of the Si(001)-1 × 1-Cu surface layer, thereby modifying the film growth mechanism. As a consequence, the Cu₂Si film phase arises when the thickness reaches two to four MLs, and bulk Cu₃Si silicide islands begin growing at five to ten MLs. When islands continue to grow, their height and density reach, respectively, 1.5 nm and 2 × 10¹¹ cm⁻² and the island area is 70% of the substrate surface at a thickness of ten MLs.     

Magnetic reconstructions at the surface of the B2 FeV alloy

We present an ab initio study of the magnetic surface reconstructions of the B2 FeV alloy using a self-consistent tight-binding linearized muffin tin orbital method developed in the atomic spheres approximation. For (001) and (111), the surface reconstruction stabilizes configurations unstable in the bulk alloy. When Fe is at the (001) surface, a c(2×2) in-plane antiferromagnetic order is found to be the ground state with magnetic moments of -2.32 and 2.27. A p(1×1) ↓ ferromagnetic order is displayed in case of V toplayer with a magnetic moment of -1.83. At the (111) surface, we obtain for Fe toplayer two solutions p(1×1)↑ and p(2×1). The configuration p(1×1)↑ is found to be the ground state with a magnetic moment per atom of 2.34. For V toplayer, only the p(1×1) ↓ solution is obtained with a moment of -0.84. In all cases, the Fe-V coupling is always antiparallel like in the bulk. Our results are discussed and compared to experiments. Received 11 August 2000 and Received in final form 8 June 2001     

Li2O-2B2O3熔体的物性研究

系统测量了四硼酸锂(Li₂Ｏ-２Ｂ_２Ｏ_３)熔体的密度ρ、表面张力γ随着温度的变化规律，实验结果表明在1100K到1500K范围内Li₂Ｏ-２Ｂ_２Ｏ_３高温熔体的密度和表面张力随着温度的升高均线性减小.通过实验数据拟合得出熔体密度与温度关系为ρ(T)=2.574—4.89×１０^－４T，熔点处Li₂Ｏ-２Ｂ_２Ｏ关键词： 功能晶体 四硼酸锂 密度 表面张力     

Hydrogen chemisorption on Pd(100) studied with he scattering

He scattering from the clean Pd(100) surface yields extremely weak diffraction beams relative to the specular, corresponding to a very small maximum corrugation amplitude of ~ 0.04 Å. Hydrogen adsorption at a temperature of 110 K leads to the formation of a c(2 × 2) ordered phase at a coverage of 0.5 monolayers and a (1 × 1) phase at saturation coverage. The maximum corrugation amplitude of the c(2 × 2)H is ~0.13 Å; surface charge density calculations using overlapping atomic charge densities indicate a normal distance of the hydrogens to the topmost Pd layer d_n ? 0.65–0.70 Å corresponding to a H-Pd bonding distance of ~ 2.05 Å in the fourfold hollow sites. The result that the maximum corrugation amplitude of the (1 × 1) hydrogen phase, with ~ 0.025 Å, even smaller than that of the clean surface may indicate a movement of the hydrogens closer to the topmost metal layer, when the coverage is increased from 0.5 monolayers to saturation.     

Hydrogen-induced reconstruction of the W(100) surface,studied by surface core level spectroscopy

We report W(4?) surface core level shifts which yield new information on the energetics of the W(100) (1 × 1) → C(2 × 2)H phase transition. At small hydrogen coverages we find two co-existing surface core levels from atoms on normal lattice sites and from atoms in reconstructed domains. These surface levels are shifted to smaller binding energy (toward E_F) by 0.35 eV and 0.13 eV relative to the bulk level, respectively. The most stable configuration is obtained at a fractional coverage θ_H ? 0.2, at which all surface atoms are shown to be paired with neighboring atoms in the surface plane.     

Adsorption,diffusion and self-diffusion on tungsten surfaces with adsorbed palladium

The influence of a Pd adsorption layer on the surface self-diffusion of tungsten has been measured using a field emitter technique. By adsorption of 1.2 × 10¹⁵ Pd atoms/cm² — measured by high energy ion backscattering — the surface self-diffusion energy decreases from 70 to 54 kcal/mole, and the diffusivity from 0.95 to about 0.2 cm²/s, which corresponds to an increase of the diffusion coefficient by a factor 40 at 1600 K and 80 at 1400 K. Furthermore are determined (1) adsorption lifetimes in adsorption-desorption equilibria, (2) the isosteric adsorption heat (103 kcal/mole), and (3) the coefficient of Pd surface diffusion on W resulting in diffusion energies of 32 kcal/mole around (001) and 17 kcal/mole around (111).     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.