Cr4+∶YAG固体激光器效率的理论分析

对Cr4 ∶YAG固体激光器的吸收效率、量子效率、储存效率和提取效率等本征效率进行了分析.Cr4 ∶YAG晶体的吸收截面、发射截面、上能级寿命和激活离子浓度等对激光器的本征效率有很大的影响.提高Cr4 ∶YAG晶体的光学品质和激活离子的掺杂浓度,优化泵浦源的运转波长和激光腔的设计都能显著改善Cr4 ∶YAG固体激光器的本征效率.     

Cr~(4 )∶YAG固体激光器效率的理论分析

对Cr~(4 )∶YAG固体激光器的吸收效率、量子效率、储存效率和提取效率等本征效率进行了分析.Cr~(4 )∶YAG晶体的吸收截面、发射截面、上能级寿命和激活离子浓度等对激光器的本征效率有很大的影响.提高Cr~(4 )∶YAG晶体的光学品质和激活离子的掺杂浓度,优化泵浦源的运转波长和激光腔的设计都能显著改善Cr~(4 )∶YAG固体激光器的本征效率.     

LD端面泵浦Cr~4∶YAG被动调Q激光器输出特性研究

对激光二极管端面泵浦Cr4+∶YAG被动调Q Nd∶YAG激光器输出特性进行了实验研究.实验研究发现,激光器输出功率及脉冲重复频率随谐振腔长度增大而增大.为解释这一实验现象,测量了泵浦光斑在激光晶体内尺寸,同时计算了激光晶体及Cr4+∶YAG晶体内的基模激光光斑半径随谐振腔长度变化.分析结果表明:激光晶体内泵浦光斑尺寸远小于激光晶体内基模光斑半径,腔模间交叠效率较低;当腔长增加时,激光晶体内的基模激光光斑减小,腔模间交叠效率增加,从而导致输出功率及脉冲重复频率随腔长增加而增加;另外,Cr4+∶YAG晶体内光斑半径也随谐振腔长度减小,引起Cr4+∶YAG晶体漂白时间缩短,导致脉冲重复频率随腔长增加而增加.     

基于热键合技术的Cr~(4+):YAG被动调Q固体激光器实验研究

为获得一体化ns脉冲固体激光器,设计了一种Cr4+∶YAG被动调Q的激光器,将Cr4+∶YAG和Nd∶YAG热键合到一起,并在两端直接镀膜构成F-P激光腔。实验中用光纤耦合的激光二极管端面泵浦激光晶体,实现准连续的激光脉冲输出。针对实验中存在的热透镜效应,设计了一散热片,并对风吹和散热片的实验结果进行了对比。实验证实了设计的可行性,并实现了激光器的稳定运转。     

LD泵浦Cr4+∶YAG被动调Q锁模Nd∶Gd0.42Y0.58VO4激光器

理论和实验研究了LD泵浦Nd∶Gd0.42Y0.58VO4/Cr4+∶YAG被动调Q锁模激光器.在分析Cr4+∶YAG晶体能级结构和调Q锁模物理过程的基础上,通过数值模拟给出了Cr4+∶YAG调Q锁模的参量要求,然后进行了实验验证.实验中Cr4+∶YAG的初始透过率T0分别为86.3%、95%,输出镜的透过率T分别为10%、20%,在其他条件不变的情况下构成四种不同的组合,均实现了激光器的调Q锁模运转.实验结果表明,降低Cr4+∶YAG的初始透过率T0或提高输出镜透过率T有利于获得较好的锁模效果,与理论分析一致.     

半导体可饱和吸收镜作为被动调Q吸收体的发展状况

简介了近年来发展起来的若干种新型固体激光器被动调Q用吸收体：掺Cr4+系列，Cr，Nd∶YAG自调Q激光晶体，人眼安全激光器被动调Q用吸收体，GaAs吸收体，半导体可饱和吸收镜。着重介绍了固体激光器和光纤激光器调Q用半导体可饱和吸收镜的原理、研制方法及应用状况。     

Cr,Ca∶YAG的液相外延生长

报道了可饱和吸收体Cr4+∶YAG的液相外延生长 ,对双掺杂Cr ,Ca∶YAG外延层的吸收特性进行了分析。通过对Cr离子掺杂浓度以及外延层厚度的控制 ,λ =1.0 6 4μm的饱和与非饱和透过率差ΔT可以在 5 %～ 30 %的范围内进行调节 ,满足单片式被动调Q微晶片激光器对饱和吸收体的设计要求。分析结果同时表明外延Cr,Ca∶YAG层中还有Cr5+离子的存在     

激光器件 固体激光器

TN248.12006010091Cr4 ∶YAG固体激光器的频率稳定性分析=Frequencystability analysis of solid-state Cr4 ∶YAGlaser[刊,中]/余先伦(重庆三峡学院电子工程系.重庆(404000)),杨伯君…∥光通信研究.—2005(4).—64-67从反映Cr4 ∶YAG固体激光器的频率特性的方程出发,定量分析了激光器工作的环境温度、大气及湿度等因素的变化对激光器的频率波动的影响,提出可采用Pound-Drever系统对Cr4 ∶YAG激光器进行主动稳频。图4参5(于晓光)TN248.12006010092新型全固态激光器作用过程中的激光参数分析=Analysisand comparison of laser osci…     

铬、钕双掺钆镓石榴石(Cr~(4+),Nd~(3+))∶Gd_3Ga_5O_(12)激光晶体光学性能的研究

用提拉法生长了掺铬、钕的钆镓石榴石(Cr4+,Nd3+∶GGG)自调Q激光晶体。报道了室温下的吸收光谱和荧光光谱特性。分析了Cr离子浓度对光谱性质的影响。比较了Cr4+∶GGG,Nd3+∶GGG和(Cr4+,Nd3+)∶GGG晶体吸收光谱的关系。测量了(Cr4+,Nd3+)∶GGG晶体和Nd3+∶GGG晶体的荧光寿命,它们分别是33μs和250μs。实验表明,(Cr4+,Nd3+)∶GGG晶体是一种非常有潜力的自调Q激光晶体,可以实现大功率激光器的小型化和全固态化。     

Yb3+离子掺杂浓度对Yb∶YAG晶体发光及荧光寿命的影响

研究了不同掺杂浓度Yb∶YAG晶体的发光特性和荧光寿命.Yb3+在YAG晶体中的掺杂浓度分别为5at%、10at%、20at%、30at%.Yb3+离子掺杂浓度越高，Yb∶YAG晶体的吸收系数越大.采用940 nm波长的LD泵浦源和TRIA X550荧光谱仪，对这一系列掺有不同浓度Yb3+的Yb∶YAG晶体进行了荧光光谱的测定.结果表明:在1030 nm主发光波段的荧光强度以10at%Yb∶YAG的为最强.同时发现它在450 nm-680 nm波段有明显的可见发光，其强度随Yb3+掺杂浓度的增加而迅速地增强.Yb∶YAG晶体的荧光寿命存在浓度猝灭现象，对猝灭机制进行了分析研究，指出浓度猝灭的主要原因是合作发光和痕量稀土离子的上转换发光.     

Cr^4＋：YAG被动调Q激光器输出特性的解析分析

在考虑Cr^4＋：YAG晶体激发态吸收的情况下，给出了Cr^4＋：YAG被动调Q的Nd：YAG激光器的速率方程组，从该速率方程组出发推导出了Nd：YAG被动调Q激光器的输出能量、脉冲宽度和效率的解析解，并分析了各参量之间的相互耦合关系。结果表明，在考虑了Cr^4＋：YAG晶体激发态吸收的情况下，理论上能够正确地反应出Cr^4＋：YAG晶体的吸收特性，对设计和优化Cr^4＋：YAG被动调Q激光器有一定的指导意义。     

Experiment Study on Active-passive Mode-locking Using Cr4+∶YAG as Saturable Absorber

Cr4+∶YAG crystal was used as a saturable absorber in an active-passive mode-locked Nd∶YAG laser. The stable and complete mode-locked pulse train was achieved at 1064 nm. The duration of ～0.8 ns to 2.4 ns for a single pulse was obtained by using Cr4+∶YAG crystals with the different initial transmissions, and there was a shortest pulse width. The mode-locking dynamic process of Cr4+∶YAG crystal was discussed to explain the experimental result, and the effect of excited-state absorption was considered.     

Laser-diode pumped self-Q-switched microchip lasers

Optical properties of Cr,Yb:YAG, Cr,Nd:YAG crystals, and composite Yb:YAG/Cr:YAG ceramics self-Q-switched solid-state laser materials are presented. The merits of these self-Q-switched laser materials are given and the potentials of such lasers can be chosen by the applications. Cr,Yb:YAG and composite Yb:YAG/Cr:YAG ceramics self-Q-switched laser are conducted. Although several tens of kW peak power can be obtained with a monolithic microchip Cr,Yb:YAG laser, the experimental results show that the performance of this laser is limited by the absorption of Cr⁴⁺ ions at a pump wavelength of 940 nm and strong fluorescence quenching at high Cr concentration. Composite Yb:YAG/Cr:YAG ceramics are more suitable to realize high pulse energy and peak power (up to MW level) with optimized lasing and Q-switching parts. In addition, the instabilities induced by the multi-longitudinal mode competition in Cr,Nd:YAG and Cr,Yb:YAG microchip lasers are addressed. The different gain bandwidths of Yb:YAG and Nd:YAG play an important role in the instability of the output laser pulse trains. Stable laser pulses from the Cr,Yb:YAG microchip laser were obtained due to the antiphase dynamics. For the Cr,Nd:YAG microchip laser, the instability caused by the multi-longitudinal mode competition is an intrinsic property. Different transverse patterns were observed in Cr,Nd:YAG microchip lasers when a pump beam with larger diameter was used. Saturated inversion population distribution inside the gain medium plays an important role in the transverse pattern formation. Different transverse patterns were reconstructed by combining different sets of the Hermite-Gaussian modes.     

Investigation of Absorption Spectra of (Cr4+,Yb3+):YAG Crystal

The absorption spectra characters of the (Cr,Yb):YAG,Cr:YAG and Yb:YAG crystals are reported. In the absorption spectra of the (Cr,Yb): YAG crystal,there are two absorption bands at 937 nm and 968 nm respectively,which are suitable for InGaAs diode laser pumping;and there is an absorption band of Cr4+ near 1030 nm,which is suitable for passive Q switch laser output at 1.03 μm. This Cr-Yb-codoped crystal may be a potential material for compact,diode laser pumped passive Q-switched solid-state laser with efficient,high-stable.     

Investigation of Absorption Spectra of(Cr~(4 ),Yb~(3 )):YAG Crystal

1lntroductionThsaturableabsotherswhichhavebeensucceSSfullyusedforpassiveQswitched1asersincludedye['],Lffi:F2colDcenterCrytals['],Cr -doPedcrysds['~'],etc.Amngthem,Cr -doPedCryStalsdevtheedinrecentyearssuchasCr :YAG,Cr :GSGG,andCr :WeSnyandsoon,havetheadVanageSofgoodphoto-chedcalandthermalstabillty,largabsorptbocross-section,besaturableintensityandhighdaInaethreshod.Inaddition,Cr canbedoPedintOgainmediumtoformselfQ-switchedl..,['J.Cr -dopedcrystalsbecomethemostprotalsingsatIJrable…     

Yb∶YAG晶体的荧光特性研究

测量了不同掺杂浓度Yb∶YAG晶体氧化和还原气氛退火前后的色心吸收光谱、荧光光谱和荧光寿命.研究了色心对Yb∶YAG晶体的荧光强度和荧光寿命的影响.结果表明,只有当Yb的掺杂浓度大于10 at.%时,色心吸收的加强对发光强度和荧光寿命有明显猝灭作用.     

YAG晶体中Cr4+和Yb3+的光谱和荧光特性研究

报道了（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体的吸收光谱和荧光光谱特性。在室温下,（Ｃｒ＾４＋,Ｙｂ＾３＋）：ＹＡＧ晶体在９３７ｎｍ和９６８ｎｍ处存在两个吸收带,能与ＩｎＧａＡｓ激光二级管有效耦合：而且在１０３０ｎｍ处有一Ｃｒ＾４＋吸收峰,可以实现对Ｙｂ＾３＋的自调Ｑ激光输出。（Ｃｒ＾＋,Ｙｂ＾３＋）：ＹＡＧ 荧光光谱与Ｙｂ＾３＋：ＹＡＧ晶体一样,发光中心也是位于１０２９ｎｍ,但其强度比Ｙｂ＾３＋：