Au1-xNix合金(x=0.30-0.42)低温电阻率极小值的机理探讨

为了解释Au_1-xNi_x合金(x=0.30—0.42)低温出现电阻率极小值的实验结果,本文提出一个低浓度自旋集团顺磁态合金的模型,得到自旋集团孤立近似下和自旋集团耦合作用下的电阻率公式,并和晶格散射的贡献(由Au₈₀Ni₂₀合金或Au-Cu合金的ρ_i(T)实验数据代替)联合起来,得到ρ(T)的计算曲线,和实验结果符合得很好。当Tmin,电阻率随温度增高而下降,主要是自旋集团孤立近似下的Kondo效应引起的。自旋集团之间的RKKY耦合作用对电阻率的贡献在低温时大,随着温度增高按1/T规律迅速减小,所以ρ(T)-ρ_i(T)实验值在相当宽温度范围出现logT关系。随着温度增高,晶格散射对电阻率的贡献将变得重要,当T=T_min,电阻率出现极小值。 关键词：     

Low temperature resistivity minimum and its correlation with magnetoresistance in La0.67Ba0.33MnO3 nanomanganites

A systematic investigation of structural, magnetic and electrical properties of nanocrystalline La_0.67Ba_0.33MnO₃ materials, prepared by citrate gel method has been undertaken. The temperature-dependant low-temperature resistivity in ferromagnetic metallic (∼50 K) phase shows upturn behavior and is suppressed with applied magnetic field. The experimental data (<75 K) can be best fitted in the frame work of Kondo-like spin-dependant scattering, electron-electron and electron-phonon interactions. It has been found that upturn behavior may be attributed to weak spin disorder scattering including both spin polarization and grain boundary tunneling effects, which are the characteristic features of extrinsic magnetoresistance behavior, generally found in nanocrystalline manganites. The variation of electrical resistivity with temperature in the high temperature ferromagnetic metallic part of electrical resistivity (75K<T<T_P) has been fitted with grain/domain boundary, electron-electron and magnon scattering mechanisms, while the insulating region (T>T_P) of resistivity data has been explained based on adiabatic small polaron hopping mechanism.     

Local moment ferromagnetism in CeRu2Ga2B

Magnetization, specific heat, and electrical resistivity measurements for polycrystalline specimens of CeRu(2)Ga(2)B reveal local moment ferromagnetic order at a Curie temperature T(C) = 16.3 K. Specific heat measurements show that the phase transition is second order and the low temperature behavior indicates that the Ce f-electron states do not hybridize strongly with the conduction electron states. Electrical resistivity measurements demonstrate large spin disorder scattering of conduction electrons for T ≥ T(C). Results for a single crystal are also reported, where T(C) = 15.4 K. While results for the polycrystal and single crystal specimens are qualitatively similar, the differences between them suggest that crystalline disorder plays a role in how the magnetism develops.     

共振价键模型中正常态电阻率的讨论

本文运用线性响应理论推导共振价键(RVB)模型中holon-spinon散射和holon-phonon散射导致的正常态电阻率公式。计算结果表明:holon-spinon散射电阻率若用ρ-T^α公式拟合,α在1.4—1.5之间随温度变化;而声子散射电阻率在很大温度范围呈现线性温度行为。 关键词：     

Transport properties of magnetically ordered amorphous (Fe100-xMnx)75P15C10 alloys

The resistivity , the magnetoresistance Δ and the Hall resistivity _H of alloys up to 30% Mn have been measured using amorphous ribbons of these materials. The temperature and field dependences of and _H suggest a variety of structural and spin scattering centers; in particular, (T) appears to be governed by structural (isotropic) scattering centers while _H(T) is dominated by topological (anisotropic) spin scattering centers, one of which probably is a “spin-hole”.     

Observation of novel coexistence of Kondo effect and room temperature magnetism in AlN/Al/AlN trilayer thin film

In this work for the first time, we are reporting the unusual observation of the Kondo effect with the coexistence of room temperature ferromagnetism in AlN/Al/AlN trilayer thin film. The grown film shows resistivity minimum at a temperature of ∼48K, which shifts to the lower temperature on the application of magnetic fields. After considering various possibilities for an upturn in resistivity, we found that the Kondo scattering is responsible for upturn at low temperature. The simultaneous presence of ferromagnetism and Kondo scattering is explained by spatial variation of nitrogen vacancy defects from the film surface to the Al sandwich layer. Furthermore, magneto-transport properties of the film measured at different temperature exhibits both negative and positive components described by localized magnetic moment model for the spin scattering of carriers and two-band model, respectively. This work provides insight into the novel co-existence of ferromagnetism and Kondo effect in crystalline AlN.     

Temperature behavior of resistivity of a two-dimensional doped antiferromagnet depending on its spin susceptibility

The temperature dependence of resistivity ρ(T) of a two-dimensional doped antiferromagnet is studied for different forms of spin susceptibility χ(q, ω): with allowance for the damping and renormalization of the magnetic excitation spectrum and for the so-called strongly damped magnons. The kinetic equation is constructed on the basis of the spin-fermion model for the carrier scattering from spin fluctuations. The temperature-dependent scattering anisotropy is taken into account using the seven-moment approximation for the nonequilibrium distribution function. It is demonstrated that the resistivity calculation on the basis of the self-consistent expression for χ(q, ω) with allowance for damping qualitatively reproduces the experimental anomalous behavior of ρ(T) in high-temperature superconductors. At the same time, the strongly damped magnon approximation, which is widely used for χ(q, ω) representation, proves to be incorrect in the high-temperature region.     

Low temperature metallic resistivity of the charge-transfer organic conductor (TMTSF)2PF6

The electrical resistivity arising from electron-electron Umklapp scattering is calculated at low temperatures for the anisotropic but two-dimensional charge-transfer complex (TMTSF)₂PF₆. Also, we consider a specular scattering correction to a recent one-phonon scattering mechanism and find a significant change in the temperature dependent behavior of the resistivity. Finally an exact solution is obtained for the resistivity arising from two-libron scattering and is found to give a small contribution at low temperatures. Comparing these results with recent data, we find that the electron-electron mechanism yields the most satisfactory agreement at low temperatures, while contributions from the other two mechanisms may not be negligible at high temperatures.     

Generalized Elliott-Yafet theory of electron spin relaxation in metals: origin of the anomalous electron spin lifetime in MgB2

The temperature dependence of the electron-spin relaxation time in MgB2 is anomalous as it does not follow the resistivity above 150 K; it has a maximum around 400 K and decreases for higher temperatures. This violates the well established Elliot-Yafet theory of spin relaxation in metals. The anomaly occurs when the quasiparticle scattering rate (in energy units) is comparable to the energy difference between the conduction and a neighboring bands. The anomalous behavior is related to the unique band structure of MgB2 and the large electron-phonon coupling. The saturating spin relaxation is the spin transport analogue of the Ioffe-Regel criterion of electron transport.     

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

Polycrystalline La_0.7Sr_0.3MnO₃ (LSMO) films were prepared on SiO₂/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction.     

Transport properties in the pseudobinary (Gd,Y) Al2 series

The temperature dependence of the electrical resistivity, the thermal conductivity and the thermopower of the cubic isostructural (Gd_xY_1–x)Al₂ series will be presented. The magnetic properties of this system are characterized by the existence of ferromagnetism for Gd concentrations x>0.3 while for low Gd contents cluster and spinglass behaviour is observed. The spin dependent scattering contribution to the transport phenomena has been obtained by comparing the experimental data of the magnetic compounds with those of the isostructural nonmagnetic YAl₂. For the ferromagnetic concentration range and forT>T _c (T _c =Curie temperature) we revealed a temperature independent contribution to the electrical resistivity, a contribution with a temperature variation of 1/T to the thermal resistivity and a linear temperature dependence of this part to the thermopower. These results are in good agreement with the temperature dependence calculated by solving the linearized Boltzmann equation for this type of scattering processes.     

Extrinsic spin Hall effect induced by iridium impurities in copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, (2.1±0.6)% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.     

Hall resistivity in ferromagnetic manganese-oxide compounds

The transport properties of manganese-oxides are studied using the spin correlation fluctuation scattering mechanism. It is shown that the Hall resistivity in a small magnetic field exhibits a maximum near the Curie point, and a strong field shifts the peak position to high temperature and suppresses the peak value; the dependence of the Hall resistivity on the magnetic field above T_c and below T_c is different. These results agree with the experimental curves qualitatively, but disagree quantitatively, which indicates that the spin correlation fluctuation scattering might not be the dominant mechanism of the colossal magnetoresistance. The double polaron mechanism due to strong electron-phonon and electron-spin coupling is proposed to be responsible for the colossal magnetoresistance in manganese-oxides.     

The unusual magnetotransport properties of La0.67Sr0.33MnO3 with Nb2O5 addition

Enhancements of the low-field (LFMR) and high-field magnetoresistance (HFMR) were observed in the manganite system prepared by doping Nb₂O₅ into La_0.67Sr_0.33MnO₃ powders. The maximum MR ratios at 77 K with H=1 T and 1 kOe are 30% and 20% for the 0.07 molar ratio doped sample, which are 1.7 times and 1.6 times as large as that for LSMO, respectively. An MR effect up to 6.5% was also found for the sample with x=0.03 at room temperature (RT). The spin-dependent tunneling and scattering at the interfaces of grain boundaries are responsible for the LFMR while the HFMR originates from a noncollinear spin structure in the surface layer. With increasing x, the Curie temperature (T_C) decreases monotonically from 364 to 154 K while the temperature T_P related to the peak resistivity decreases firstly to a minimum of 204 K (x=0.06) and then rises up to 240 K (x=0.1). There is a maximum resistivity ρ for the sample with x=0.06, which is higher than that for LSMO by five orders of magnitude. It is due to the enhancement of spin-dependent and independent scattering and tunneling effects on the interfaces of grain boundaries and inside the grains.     

Competing ordered phases in URu2Si2: hydrostatic pressure and rhenium substitution

A persistent kink in the pressure dependence of the "hidden order" (HO) transition temperature of URu(2-x)RexSi2 is observed at a critical pressure P(c)=15 kbar for 0 相似文献   

Optical and dc conductivities in high-T c superconductors: Spin-fluctuation scattering in the Emery model

On the basis of the Emery model for the CuO₂ plane, the optical conductivity and resistivity due to the inelastic scattering of oxygen holes by antiferromagnetic fluctuations of copper spins are calculated. For moderate hole doping, the electrical conductivity obeys a generalized Drude law. Using a phenomenological model for the dynamic spin susceptibility, the in-plane resistivity reveals a crossover from a quadratic to a linear temperature dependence at the scale of the spin-fluctuation energy. The frequency dependence of the scattering rate changes from a quadratic to a linear increase over a wide frequency range. The theory is compared with experiments on LSCO and YBCO compounds, where the spin dynamics is described within the model by Millis et al. A good quantitative agreement (in particular of the frequency-dependent scattering rate) with experiments is found. We conclude that the spin-fluctuation scattering may play a dominant role in the transport properties of Cu-oxide superconductors.     

Antiferromagnetic spin fluctuations above the dome-shaped and full-gap superconducting states of LaFeAsO1-xFx revealed by (75)As-nuclear quadrupole resonance

We report a systematic study by (75)As nuclear-quadrupole resonance in LaFeAsO(1-x)F(x). The antiferromagnetic spin fluctuation found above the magnetic ordering temperature T(N) = 58 K for x = 0.03 persists in the regime 0.04 ≤ x ≤ 0.08, where superconductivity sets in. A dome-shaped x dependence of the superconducting transition temperature T(c) is found, with the highest T(c) = 27 K at x = 0.06, which is realized under significant antiferromagnetic spin fluctuation. With increasing x further, the antiferromagnetic spin fluctuation decreases, and so does T(c). These features resemble closely the cuprates La(2-x)Sr(x)CuO(4). In x = 0.06, the spin-lattice relaxation rate (1/T(1)) below T(c) decreases exponentially down to 0.13T(c), which unambiguously indicates that the energy gaps are fully opened. The temperature variation of 1/T(1) below T(c) is rendered nonexponential for other x by impurity scattering.     

Temperature dependence of the contribution to the transport coefficients of nearly ferromagnetic metals from electron-paramagnon scattering

We present calculations of the temperature dependence of the contribution from electron-paramagnon scattering to the electrical and thermal resistivity of a simple model of a nearly ferromagnetic metal. The purpose of the work is to explore the behavior of these quantities when the temperature is the order of or greater than the spin fluctuation temperature T_sf. As the temperature T is raised from zero through T_sf, the electrical resistivity varies more slowly with temperature than the T² law characteristic of the regime T?T_sf. When T?T_sf, the electrical resistivity becomes proportional to T, although this asymptotic behavior is approached very slowly. The Lorenz number rises monotonically with temperature, and appears to approach the ideal Sommerfeld value when T?T_sf, although this limit is also approached slowly.     

Negative resistivity anomaly of unstable 4f impurities in metals

The minimum of the resistivity of dilute alloys with unstable Ce and Pr impurities is usually attributed to an abnormal increase of the spin scattering cross section of the inner 4f electron at low temperatures (4f Kondo effect). By comparison with the resistivity increments of stable rare earth impurities, we show that nearT=0 the anomalous increment is in fact consistent with simple potential scattering from the outer 5d6s valence electrons of fractional valent impurities. The observed decrease of the increment at elevated temperatures is too large to be due to 4f spin scattering in the unitarity limit or to a valence change. This decrease therefore implies some kind of shunting of the impurity potential scattering by an unknown mechanism connected with the valence instability of the impurity.