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Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity |
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| Authors: | AB Weerasekara MBM Rinzan SG Matsik AGU Perera M Buchanan HC Liu G von Winckel A Stintz S Krishna |
| Institution: | aDepartment of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA bInstitute for Microstructural Sciences, National Research Council, Ottawa, Ont., Canada K1A 0R6 cCenter for High Technology Materials, EECE Dept., University of New Mexico, Albuquerque, NM 87106, USA |
| Abstract: | Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f0, of 3.2 THz (93 μm) was obtained by using n-type GaAs emitter doped to 1 × 1018 cm−3 and Al0.04Ga0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 μm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are  19% and 5.5 × 108 Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K. |
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