Surface barrier and magnetic hysteresis of ac permeability in YBaCuO single crystal

The nature of hysteretic behavior of the flux line lattice (FLL) contribution to ac magnetic permeability (μ_v) is analyzed for the case of YBa₂Cu₃O_x single crystal (at applied magnetic field Hc axis). It is shown that hysteresis loops μ_v(H) corresponding to different temperatures (T=70–84 K) are scaled to a universal curve in normalized coordinates. Such a behavior is interpreted in terms of the FLL interaction with the crystal surface. The explicit relationship between μ_v and magnetic induction B is found for the near-surface region of the superconductor. It is shown that the μ_v(H) loops are closely related to the hysteresis of B at cycling of applied magnetic field. The latter hysteresis stems from the Bean–Livingston surface barrier. The estimates demonstrate strong suppression of the surface barrier in YBa₂Cu₃O_x crystal in comparison to that expected for the ideal surface. As a result, the lower branch of the hysteresis loop corresponding to the increasing field is very close to the equilibrium μ_v(H) curve and the surface barrier appreciably affects only the upper branch when magnetic flux leaves the sample. The comparison of theoretical predictions and experimental data provides an opportunity to refine the actual range of stability H_max(B)–H_min(B) for the FLL at fixed B for YBa₂Cu₃O_x crystal in the case of Hc.     

Anomalous magnetotransport phenomena in θ-(BEDT-TTF)2I3

Anomalous magnetotransport phenomena have been observed in θ-(BEDT-TTF)₂I₃ crystals at temperatures below 15 K. The magnetoresistance M : (1) is a linear function of the magnetic field H, (2) is not affected by the angle between the electric current and the magnetic field, (3) but depends on the magnetic field orientation with respect to the crystal axis. Magnetoresistance is expressed as M = (aH²_a + bH²_b + cH²_c)₀^-3/2/H in terms of H = (H_a, H_b, H_c), the zero field resistivity ₀, and parameters a, b, and c which are independent of temperature and magnetic field. We have found that b a > c. Magnetoresistance up to 40 is observed for H = 7T along the b-axis at T = 1.5K.     

Effective activation energy Ue(T,J,H) in textured Bi1.84Pb0.4Sr2Ca2Cu3Oy silver-clamped thick films

We have measured the resistivity of textured Bi_1.84Pb_0.4Sr₂Ca₂Cu₃O_y silver-clamped thick films as a function of temperature, current density ranging from 10 to 1×10³ A/cm² and magnetic field up to 0.3 T. We find that the effective activation energy U_e follows U_e(T,J,H)=U₀(1−T/T_p)^mln(J_c0/J)H⁻ with m=1.75 for Hab-plane and 2.5 for Hc-axis and =0.76 for Hab and 0.97 for Hc, for the current density regime above 100 A/cm², where T_p is a function of applied magnetic field and current density. This result suggests the effective activation energy U_e be correlated with the temperature, current density and magnetic field. The possible dissipative mechanisms responsible for the temperature, current density and magnetic field dependence of the effective activation energy are discussed.     

稳恒磁场下金属电沉积枝晶生长的模拟

采用Monte-Carlo模拟方法,给出用于描述稳恒磁场作用下电沉积枝晶生长的模型.该模型综合考虑了外加磁场B,电解溶液浓度和离子在阴极发生还原反应的几率P_s等因素对电沉积过程的影响,模拟得到与实验结果一致的枝晶生长图形.模拟结果表明:团簇的形状和它们的分形维数都与外加磁场B的强弱,即体现在模型中离子的旋转角速度ω的大小有关;随着磁场强度的增加,沉积团簇会从分形向非分形转变;在相对强的外加磁场作用下,较高离子浓度时的沉积物是非分形的;离子在阴极的反应概率P_s越小,随着磁场强度的增加枝晶生长越易趋向非分形.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Superconductivity of compressed platinum powder at very low temperatures

Superconductivity of compressed, high-purity platinum powder (average grain size 2–3 μm) was found by measurements of resistivity, AC susceptibility and magnetization. The transition temperature into the superconducting state T_c and the critical magnetic field B_c strongly depend on the packing fraction f of the samples: we found 0.62T_c(0)1.38 mK and 6.6B_c(0)67 μT for 0.8f0.5, respectively. The temperature dependence of the critical magnetic fields can be described by B_c(T)=B_c(0)(1−(T/T_c)²). The discussion of these results includes possible explanations for the origin of superconductivity in this new superconducting material.     

PrNi$lt;sub$gt;2$lt;/sub$gt;的磁和磁热性能研究

在一些磁性材料内, 磁性离子间交换作用和磁性离子的自旋涨落对材料磁性有影响. 本文根据磁比热实验值确定了晶场参数后, 利用包含自旋涨落的交换作用有效场H_m= n₀ (1 + γ T + β e^{ω T})M, 计算了PrNi₂晶体晶场能级的Zeeman劈裂. 在温度为3.8 K ≤T≤ 30 K范围内, 计算了该晶体多晶磁矩随外磁场的变化, 以及外磁场H=5000 Oe时磁化率倒数随温度的变化, 计算结果和实验值符合较好. 当外磁场在0–50000 Oe时, 计算的该晶体的磁熵变与已有文献的理论结果相似. 计算结果说明, 提出的包含自旋涨落的交换作用有效场不仅适合亚铁磁性晶体, 而且也适合顺磁性晶体. 关键词： 2')" href="#">PrNi₂ 磁比热 交换作用有效场 磁矩 磁熵变     

Perturbative QCD correction to the B → π transition form factor

We report on the perturbative O(_s) correction to the light-cone QCD sum rule for the B → π transition form factor f⁺. The correction to the product f_Bf⁺ in leading twist approximation is found to be about 30%, that is similar in magnitude to the corresponding O(_s) correction in the two-point sum rule for f_B. The resulting cancellation of large QCD corrections in f⁺ eliminates one important uncertainty in the sum-rule prediction for this form factor.     

负磁剪切等离子体中离子温度梯度驱动不稳定性分析

采用打靶法,数值求解了在负磁剪切托卡马克等离子体中离子温度梯度驱动的复本征模方程.数值计算表明,环向旋转剪切流可以整体上改变剪切板η_i不稳定性.在等离子体极小q磁面附近的芯部区域,环向剪切流有稳定η_i模的作用.     

Magnetostriction and spin reorientation in ferromagnetic Laves phase Pr(Ga_xFe_(1-x))_(1.9) compounds

The magnetostriction, magnetization, and spin reorientation properties in Pr(Ga_xFe_(1-x))_(1.9) alloys have been investigated by high-precision x-ray diffraction(XRD) step scanning, magnetization, and Mo¨ssbauer spectra measurements. Ga substitution reduces the magnetostriction(λ_(||)) with magnetic field H ≥ 8 kOe(1 Oe = 1.33322×10~2 Pa), but it also increases the λ|| value when H ≤ 8 kOe at 5 K. Spin-reorientations(SR) are observed in all the alloys investigated, as determined by the step scanned XRD, Mo¨ssbauer spectra, and the abnormal temperature dependence of magnetization. An increase of the spin reorientation temperature(T_(SR)) due to Ga substitution is found in the phase diagram, which is different from the decrease one in many R(T_x Fe_(1-x))_(1.9)(T = Co, Al, Mn) alloys. The present work provides a method to control the easy magnetization direction(EMD) or T_(SR) for developing an anisotropic compensation system.     

Scaling behavior of the thermopower of the archetypal heavy-fermion metal YbRh2Si2

We reveal and explain the scaling behavior of the thermopower S/T exhibited by the archetypal heavy-fermion (HF) metal YbRh₂Si₂ under the application of magnetic field B at temperature T. We show that the same scaling is demonstrated by different HF compounds such as β-YbAlB₄ and the strongly correlated layered cobalt oxide [BiBa_0.66K_0.36O₂]CoO₂. Using YbRh₂Si₂ as an example, we demonstrate that the scaling behavior of S/T is violated at the antiferromagnetic phase transition, while both the residual resistivity ρ₀ and the density of states, N, experience jumps at the phase transition, causing the thermopower to make two jumps and change its sign. Our elucidation is based on flattening of the single-particle spectrum that profoundly affects ρ₀ and N. To depict the main features of the S/T behavior, we construct a T –B schematic phase diagram of YbRh₂Si₂. Our calculated S/T for the HF compounds are in good agreement with experimental facts and support our observations.     

NFX(X=-1,0,+1)分子离子基态的结构与势能函数

用密度泛函理论的B3LYP方法,分别以6-311++g(df,3pd),6-311g(3d,3p)和6-311++g(3df,3pd)为基函数对NF分子、NF⁺和NF^-离子基态进行几何优化和频率计算,并进行单点能扫描计算.用最小二乘法拟合得到NF^X(X=-1,0,+1)分子离子基态的Murrell-Sorbie势能函数.利用得到的解析势能函数计算出的NF分子和NF⁺离子基态光谱常数(B_e,α_e,ω_e,ω_eχ_e)与实验值符合很好.首次得到NF^-离子基态的光谱常数(B_e,α_e,ω_e,ω_eχ_e)和力常数(f₂,f₃,f₄),为NF-离子基态的后期研究提供理论参考.     

Density profile and flow of miscible fluid with dissimilar constituent masses

A computer simulation model is used to study the density profile and flow of a miscible gaseous fluid mixture consisting of differing constituent masses (m_A=m_B/3) through an open matrix. The density profile is found to decay with the height ∝exp (−m_A(B)h), consistent with the barometric height law. The flux density shows a power-law increase ∝(p_c−p)^μ with μ2.3 at the porosity 1−p above the pore percolation threshold 1−p_c.     

Steered coherence and entanglement in the Heisenberg XX chain under twisted boundary conditions

We study steered coherence(SC) and entanglement in a three-spin Heisenberg XX model under twisted boundary conditions and show that their strengths can be significantly enhanced by tuning the twist angle. The optimal twist angle θ_(opt) for achieving the maximum l_1 norm of SC is π in the region of weak field B and decreases gradually from π to 0 when B increases after a critical value, while for the relative entropy of SC, θ_(opt) equals π in the weak field region and 0 otherwise.The entanglement and the critical temperature above which the entanglement vanishes can also be significantly enhanced by tuning the twist angle from 0 to π.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Out-of-plane conductivity in Bi2Sr2CuOy crystals

We present extensive measurements of anisotropic resistivity on Bi₂Sr₂CuO_y crystals grown from melts with different Bi/Sr ratios and doped with Pb. We find that the temperature variation of the c-axis resistivity _c(T) is correlated with the in-plane resistivity _ab. Depending on the starting compositions, the normal-state in-plane resistivity _ab can either show localized conduction at low temperature or be metallic (d_ab/dT < 0) in the whole temperature range. Correspondingly, a change of the T dependence of _c from nonmetallic (d_c/dT < 0) in the whole measured temperature range (4.2–300 K) to a mixed (d_c/dT < 0 at low T but d_c/dT> 0 at high T) conduction is observed. In accompany, the magnitude of _c at low T decreases by about two orders. We have quantified the trend of the _c(T) and examined some current proposals concerning the out-of-plane transport.     

Gilbert damping in the layered antiferromagnet CrCl3

We theoretically and experimentally studied the Gilbert damping evolution of both acoustic and optical magnetic resonance modes in the layered flake Cr Cl;with an external magnetic field H applied in plane.Based on a Lagrangian equation and a Rayleigh dissipation function,we predicted that the resonance linewidth△H as a function of microwave frequencyωis nonlinear for both acoustic and optical modes in the Cr Cl;flake,which is significantly different from the linear relationship of△H-ωin ferromagnets.Measuring the microwave transmission through the Cr Cl;flake,we obtained theω–H dispersion and damping evolution△H–ωfor both acoustic and optical modes.Combining both our theoretical prediction and experimental observations,we concluded that the nonlinear damping evolution△H–ωis a consequence of the interlayer interaction during the antiferromagnetic resonance,and the interlayer Gilbert dissipation plays an important role in the nonlinear damping evolution because of the asymmetry of the non-collinear magnetizaiton between layers.     

Properties of strong-coupling magneto-bipolaron qubit in quantum dot under magnetic field

Based on the variational method of Pekar type, we study the energies and the wave-functions of the ground and the first-excited states of magneto-bipolaron, which is strongly coupled to the LO phonon in a parabolic potential quantum dot under an applied magnetic field, thus built up a quantum dot magneto-bipolaron qubit. The results show that the oscillation period of the probability density of the two electrons in the qubit decreases with increasing electron–phonon coupling strength α, resonant frequency of the magnetic field ω_c, confinement strength of the quantum dot ω_0, and dielectric constant ratio of the medium η; the probability density of the two electrons in the qubit oscillates periodically with increasing time t, angular coordinate φ_2, and dielectric constant ratio of the medium η; the probability of electron appearing near the center of the quantum dot is larger, and the probability of electron appearing away from the center of the quantum dot is much smaller.     

Flux creep and flux flow for thallium ceramics in a pulsed magnetic field

The resistive properties of Tl-ceramics with T_c|=0=114 K were investigated in a pulsed magnetic field (B) up to 30 T and in the temperature range of 4.2 K<T<140 K. It was shown that the character of the field dependence of the resistance differs qualitatively in high-and low-temperature regions. At low (T80K) temperatures the dynamic magnetoresistance arising in the sample is analogous to that observed earlier in LaSrCuO [1] and YBaCuO [2] ceramics. This magnetoresistance is defined by the magnetic field variation rate and leads to the appearance of a minimum at the maximum of the magnetic field pulse, i.e. at . In the region of high temperatures (80 K T<T_c) or magnetic fields (at T60K) the sample resistance rises monotonically with B increase, and dynamic resistance is not observed. In this temperature range the existence of a scaling relation is shown (here B^* and T^* meet the condition k=(B^*, T^*)/ _n(T^*)=const) for the ceramics resistance (B,T), which can be represented as . An estimate for the upper critical field B_c2(0)B_o=1030±40 T is obtained.     

LaBaMnO薄膜的铁磁共振

用电子自旋共振实验研究La_0.65Ba_0.35MnO₃(LBMO)薄膜的磁性,从磁性膜的各向异性铁磁共振谱得到不同角度θ_h时的共振磁场B_r,求出样品的等效磁场B_eff及旅磁比γ,并通过样品的饱和磁化强度M_s,求出各向异性常数K.