Urbach rule and disordering processes in Cu6P(S1−xSex)5Br1−yIy superionic conductors

Compositional behavior of Urbach absorption edge is studied as well as the effect of compositional disordering on the parameters of exciton-phonon interaction, phase transition temperatures and electric conductivity in Cu₆P(S_1−xSe_x)₅Br_1−yI_y superionic solid solutions. The effect of different types of disordering on the optical absorption processes and specific features of compositional changes in the absorption edge spectra under S→Se and Br→I anion substitution in the mixed crystals are investigated. (x, T) phase diagrams for Cu₆P(S_1−xSe_x)₅X (X=I, Br) solid solutions are studied.     

Influence of S→Se substitution on chemical and physical properties of Cu7Ge(S1−xSex)5I superionic solid solutions

Phase diagram of Cu₇GeS₅I-Cu₇GeSe₅I superionic system was investigated by the differential thermal analysis (DTA). Chemical interaction in Cu₇GeS₅I-Cu₇GeSe₅I system was studied by X-ray phase analysis (XPA), microstructural analysis, and density determination. Compositional behaviour of diffuse reflection spectra and energy gap due to S→Se anion substitution in Cu₇Ge(S_1−xSe_x)₅I solid solutions are discussed.     

Compositional behaviour of Urbach absorption edge and exciton-phonon interaction parameters in Cu6PS5I1−xBrx superionic mixed crystals

Temperature behaviour of optical absorption edge in Cu₆PS₅I_1−xBr_x mixed crystals is studied in the interval 77-325 K. It is shown that the absorption edge has Urbach shape in the 215-325 K temperature interval. The influence of temperature and compositional disorder on the Urbach absorption edge parameters is presented. The mechanism of the Urbach bundle formation and the effect of I→Br anionic substitution on the exciton-phonon interaction parameters is elucidated.     

Isoabsorption and spectrometric studies of optical absorption edge in Cu6AsS5I superionic crystal

Cu₆AsS₅I single crystals were grown using chemical vapour transport method. Two low-temperature phase transitions (PT) are observed from isoabsorption studies: a first-order PT at Т_?=153±1 K and a second-order PT in the temperature interval T_?I=260–280 K. At low temperatures and high absorption levels an excitonic absorption band was revealed in the range of direct optical transitions. At Т>Т_?, the absorption edge has an exponential shape and a characteristic Urbach bundle is observed. The influence of the cationic P→As substitution on the parameters of the Urbach absorption edge, parameters of exciton–phonon interaction, and phase transitions temperatures are studied.     

The bΣ(b0) → XΣ(X10,X21) and aΔ(a2) → X21 transitions of AsBr

Emission spectra of the b¹Σ⁺(b0⁺) → X³Σ⁻(X₁0⁺,X₂1) and a¹Δ(a2) → X₂1 transitions of AsBr have been measured in the near-infrared spectral region with a Fourier-transform spectrometer. The arsenic bromide radicals were generated in fast-flow systems by reaction of arsenic vapor (As_x) with bromine and were excited by microwave-discharged oxygen. The most prominent features in the spectrum are the Δv = +1,0,−1, and −2 band sequences of the b¹Σ⁺(b0⁺) → X³Σ⁻(X₁0⁺) transition in the range 11 700-12 700 cm⁻¹. With lower intensities, the Δv = 0 and −1 sequences of the b¹Σ⁺(b0⁺) → X³Σ⁻(X₂1) sub-system show up in the same range. Further to the red, between 6000 and 6700 cm⁻¹, the Δv = 0, +1, and −1 sequences of the hitherto unknown a¹Δ(a2) → X₂1 transition are observed. Analyses of medium- and high-resolution spectra have yielded improved molecular constants for the X₁0⁺, X₂1, and b0⁺ states and first values of the electronic energy and the vibrational constants of the a2 state.     

Temperature variation of electrical conductivity and absorption edge in Cu7GeSe5I advanced superionic conductor

Single crystals of Cu₇GeSe₅I superionic conductor were grown by chemical transport. Their electrical conductivity in the frequency range 1.0×10⁶–1.2×10⁹ Hz and in the temperature range 196–295 K was measured. Cu₇GeSe₅I crystal is shown to exhibit a rather high electrical conductivity (σ₂₉₅=64.0 S/m at 295 K) and a low activation energy (ΔE_a=0.125 eV). Optical absorption edge of Cu₇GeSe₅I crystals in the temperature range 77–300 K was studied, the temperature dependences of the optical pseudogap and Urbach energy being obtained. The effect of different types of disordering on the Urbach absorption edge and electron–phonon interaction parameters was investigated.     

Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

On the Urbach rule in sulphur-implanted Cu6PS5I superionic conductors

Cu₆PS₅I superionic crystals, grown using chemical vapour transport, were implanted by sulphur ions. The ion implantation effect on the phase transitions is studied by temperature isoabsorption investigation of the optical absorption edge. For the implanted crystals the optical absorption edge shape is studied in the temperature range 77-320 K, the parameters of exciton-phonon interaction, resulting in the Urbach behaviour of the optical absorption edge, are determined, the temperature dependences of the optical pseudogap and Urbach energy are obtained. The implantation effect on the ordering-disordering processes in Cu₆PS₅I superionic conductors is studied.     

Electrical,structural, magnetic and transport properties of Zn2BaFe16O27 doped with Cu

Series of polycrystalline samples of Zn_2−xCu_xBaFe₁₆O₂₇ were prepared by usual ceramic methods, where x=0.0, 0.4, 0.6, 0.8, 1.0, 1.4. X-ray analysis done at room temperature using CoK_α with λ=1.790 Å confirms the presence of W-type hexaferrite phase structure. Saturation magnetization and hysteresis loops curves measurements at room temperature were studied as a function of Cu²⁺ substitution. It can be seen that the Cu²⁺ content slightly decreases the saturation magnetization from 25 to 20 emu g⁻¹; all hysteresis loops are closed, which indicates low anisotropy field and low saturation magnetization field. The dc conductivity and thermoelectric power were measured in a range from room temperature up to T=750 K for all samples. The thermoelectric power decreases on increasing Cu²⁺ content, and the conductivity increases with temperature. The value of the charge-carrier concentration increases by increasing the temperature and Cu²⁺ content.     

High-resolution study of the bΣ(b0)→XΣ(X10) transition of PI

Emission spectra of the b¹Σ⁺(b0⁺)→X³Σ⁻(X₁0⁺) transition of phosphorus iodide have been measured with a high-resolution Fourier-transform spectrometer. The PI radicals were generated and excited in a fast-flow system by reaction of phosphorus vapor (P_x) with iodine and microwave-discharged oxygen. Four sequences, Δv=0,+1,−1,−2, of the b¹Σ⁺(b0⁺)→X³Σ⁻(X₁0⁺) transition of PI comprising 28 bands were observed. Six bands were measured at high spectral resolution. Vibrational and rotational analyses have yielded accurate spectroscopic constants of the X₁0⁺ and b0⁺ states (in cm⁻¹): X₁0⁺: ω_e=371.296(4), ω_ex_e=1.3302(9), B_e=0.1194117(2), α_B=−0.0005676(7), D_e=4.56(2) ×10⁻⁸; b0⁺: T_e=11136.921(4), ω_e=400.165(6), ω_ex_e=1.345(2), B_e=0.1239237(2), α_B=−0.0005540(2), D_e=4.84(5) × 10⁻⁸, where the numbers in parentheses are the standard deviations of the parameters. No emissions of the b0⁺→X₂1 sub-system nor of the a¹Δ(a2)→X³Σ⁻(X₂1) transition have been observed leaving PI the only group Va halide for which the spin splitting in the X³Σ⁻ ground state is still unknown.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Enhanced white light emission in Er/Tm/Yb/Li codoped Y2O3 nanocrystals

Er/Tm/Yb codoped Y₂O₃ nanocrystals and Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals have been synthesized by sol-gel method, bright white light emission has been observed at 976 nm excitation. The blue, green, and red emissions, respectively, arise from the transitions ¹G₄ → ³H₆ of Tm³⁺, ²H_11/2/⁴S_3/2 → ⁴I_15/2, and ⁴F_9/2 → ⁴I_15/2 of Er³⁺ ion. Moreover, after doping Li⁺ ions into Er/Tm/Yb codoped Y₂O₃ nanocrystals, the white light emission increase greatly. CIE coordinate of Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals is X = 0.32 and Y = 0.36 at 10 W/cm² excitation, which is very close to the standard equal energy white light illuminate (X = 0.33, Y = 0.33).     

Spectroscopy of Ca3(BO3)2: Dy crystal

Dy³⁺: Ca₃(BO₃)₂ crystal was grown successfully by the Czochraski technique. The absorption spectrum was measured and its absorption peaks were assigned. The Judd-Ofelt intensity parameters were found to be Ω₂=5.216×10⁻²⁰, Ω₄=1.858×10⁻²⁰, Ω₆=0.623×10⁻²⁰ cm². The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetime as well as the branching ratios were calculated. Also, room temperature luminescence decay curve in correspondence with the emission line ⁴F_9/2→⁶H_13/2 centered at 575 nm was measured.     

Lattice dynamic properties of BaSi2 and BaGe2 from first principle calculations

First principle calculations have been performed to study the lattice vibration of BaX₂ (X = Si, Ge). A rigid-unit vibrational mode has been observed, and this mode confines and scatters acoustic phonon modes, leading to a low thermal conductivity. Their stability is analyzed from the calculations of thermodynamic properties.     

Physical properties of the delafossite LaCuO2

High-quality LaCuO₂, elaborated by solid-state reaction in sealed tube, crystallizes in the delafossite structure. The thermal analysis under reducing atmosphere (H₂/N₂: 1/9) revealed a stoichiometric composition LaCuO_2.00. The oxide is a direct band-gap semiconductor with a forbidden band of 2.77 eV. The magnetic susceptibility follows a Curie-Weiss law from which a Cu²⁺ concentration of 1% has been determined. The oxygen insertion in the layered crystal lattice induces p-type conductivity. The electrical conduction occurs predominantly by small polaron hopping between mixed valences Cu^+/2+ with an activation energy of 0.28 eV and a hole mobility (μ_300 K=3.5×10⁻⁷ cm² V⁻¹ s⁻¹), thermally activated. Most holes are trapped in surface-polaron states upon gap excitation. The photoelectrochemical study, reported for the first time, confirms the p-type conduction. The flat band potential (V_fb=0.15 V_SCE) and the hole density (N_A=5.8×10¹⁷ cm⁻³) were determined, respectively, by extrapolating the curve C⁻² versus the potential to their intersection with C⁻²=0 and from the slope of the linear part in the Mott-Schottky plot. The valence band is made up of Cu-3d orbital, positioned at 4.9 eV below vacuum. An energy band diagram has been established predicting the possibility of the oxide to be used as hydrogen photocathode.     

Optical and FTIR properties of Se93−XZn2Te5InX chalcogenide glasses

In this work, we report the optical properties of bulk Se_93−XZn₂Te₅In_X (X=0, 2, 4, 6 and 10) chalcogenide glasses. Refractive index, extinction coefficient, real dielectric constant (ε′), imaginary dielectric constant (ε″), absorption coefficient (α) and energy band gap were obtained from analysis of common range (250-1100 nm) UV/Visible transmittance spectrum. Besides, transmission percentages were obtained from FTIR spectra in wave number range 4000-400 cm⁻¹.The concentration dependence structural phenomena have been explained with help of average coordination 〈z〉.     

Optical absorption and emission properties of Nd in TeO2-WO3 and TeO2-WO3-CdO glasses

Effects of WO₃ and CdO on the spectroscopic properties of Nd³⁺ doped tellurite glasses were investigated. The optical band gaps and Urbach energies of the samples were determined using the dependence of the absorption coefficient on the photon energy. The Urbach energies were found to vary from 0.18 to 0.25 eV as the WO₃ content in the binary glasses decreased from 20.0 to 10.0 mol% while the optical band gap of the same glasses did not show an appreciable dependence on the glass composition. Judd-Ofelt (Ω_t) parameters were calculated from the optical absorption spectra measured at room temperature. In all the glasses the J-O parameters follow the same trend as Ω₂>Ω₆>Ω₄. The J-O intensity parameters were used to compute the radiative properties such as the radiative transition probabilities (A_ed), branching ratios (β) and radiative lifetimes (τ_r) for all the possible fluorescence bands. The fluorescence spectra obtained upon 805.2 nm excitation exhibited an intense emission band centered at 1064 nm (⁴F_3/2→⁴I_11/2) and two weak bands at 910 nm (⁴F_3/2→⁴I_9/2), and 1340 nm (⁴F_3/2→⁴I_13/2). The stimulated emission cross-section for the 1064 nm emission was determined using the emission spectra. The highest gain bandwidth (σ_e×Δλ_P) was determined to be 155.4 for the 0.79TeO₂-0.15WO₃-0.05CdO ternary glass composition, which could be more useful as promising material for the design and development of fiber amplifiers and lasers.     

Fourier transform infrared emission spectra of MnH and MnD

Fourier transform infrared emission spectra of MnH and MnD were observed in the ground X⁷Σ⁺ electronic state. The vibration-rotation bands from v = 1 → 0 to v = 3 → 2 for MnH and from v = 1 → 0 to v = 4 → 3 for MnD were recorded at an instrumental resolution of 0.0085 cm⁻¹. Spectroscopic constants were determined for each vibrational level and equilibrium constants were found from a Dunham-type fit. The equilibrium vibrational constant (ω_e) for MnH was found to be 1546.84518(65) cm⁻¹, the equilibrium rotational constant (B_e) is 5.6856789(103) cm⁻¹ and the eqilibrium bond distance (r_e) was determined to be 1.7308601(47) Å.     

Structure and low-temperature properties of Ba8Ni6Ge40

Structural, magnetic, heat capacity, electrical and thermal transport properties are reported on polycrystalline Ba₈Ni₆Ge₄₀. Ba₈Ni₆Ge₄₀ crystallizes in a cubic type I clathrate structure with unit cell a=10.5179 (4) Å. It is diamagnetic with susceptibility χ_dia=−1.71×10^-6 emu/g Oe. An Einstein temperature 75 K and a Debye temperature 307 K are estimated from heat capacity data. It exhibits n-type conducting behavior below 300 K. It shows high Seebeck coefficients (−111×10^-6 V/K), low thermal conductivity (2.25 W/K m), and low electrical resistivity (8.8 mΩ cm) at 300 K.     

High-resolution study of the ν1 + ν2 and ν2 + ν3 strongly interacting bands of D2Se

A high-resolution Fourier transform spectrum of the D₂^MSe species (M = 82, 80, 78, 77, and 76) in the region 2300-2500 cm⁻¹ was recorded for the first time and assigned. On the basis of these experimental data, rotation-vibration energies of the (1 1 0) and (0 1 1) vibrational states were fitted, and band centers, and rotational, centrifugal distortion, and resonance interaction parameters were determined for the main D₂⁸⁰Se species. The obtained set of 32 fitted parameters reproduces the 647 rotation-vibration energies with a rms deviation of 0.00024 cm⁻¹. The ν₁ + ν₂ and ν₂ + ν₃ bands of the other four isotopic species are analyzed as well.