Co-sensitized quantum dot solar cell based on ZnO nanowire

An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV-vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm⁻²).     

Photoluminescence quenching of CdTe/CdS core-shell quantum dots in aqueous solution by ZnO nanocrystals

Photoluminescence (PL) properties of 3-mercaptopropionic acid (MPA) coated CdTe/CdS core-shell quantum dots (QDs) in aqueous solution in the presence of ZnO colloidal nanocrystals were studied by steady-state and time-resolved PL spectroscopy. The PL quenching of CdTe/CdS core-shell QDs with addition of purified ZnO nanocrystals resulted in a decrease in PL lifetime and a small red shift of the PL band. It was found that CdTe(1.5 nm)/CdS type II core-shell QDs exhibited higher efficiency of PL quenching than the CdTe(3.0 nm)/CdS type I core-shell QDs, indicating an electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals. The experimental results indicated that the efficient electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals could be controlled by changing the CdTe core size on the basis of the quantum confinement effect.     

Nondestructive interface construction for CdS-buffered ZnO nanorod/Cu<Subscript>2</Subscript>O composite structure solar cells

In this work, ZnO nanorod/Cu₂O composite nanostructure solar cells were prepared using hydrothermal growth and electrodeposition. The CdS layer was added between ZnO and Cu₂O to suppress carrier reverse recombination. Nondestructive interface deposition methods were employed to prepare CdS and Cu₂O functional layers. The CdS layers were unconventionally deposited in non-alkaline solution, which can inhibit etching on the ZnO surface, and Cu₂O layers were electrodeposited in ZnO-buffered alkaline solution which can also inhibit etching on the ZnO surface. Finally, the performance of solar cells was improved by adding a highly resistive CdS intermediate layer between ZnO and Cu₂O layers. This work demonstrated the nondestructive interface approach of chemical solution deposition of functional layers on ZnO and possibilities for further improvements to the performance of Cu₂O-based nanostructure solar cells with the addition of an intermediated layer.     

Chitosan hydrogel films as a template for mild biosynthesis of CdS quantum dots with highly efficient photocatalytic activity

Cadmium sulfide (CdS) semiconducting quantum dots (QDs) were prepared using in situ synthesizing method in crosslinked chitosan hydrogel films under relative mild experimental conditions and characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The experimental results confirmed that crosslinked chitosan hydrogel films provided a confined matrix for CdS QDs growth in uniform size through chelation and electrostation between cadmium ions and amino groups in chitosan chains. The CdS QDs/chitosan composite films exhibited a highly efficient photocatalytic activity for decolorization of methyl orange (MO) solution under visible light irradiation. The good linearity relationship between ln (C₀/C_i) and irradiation time (t) indicated that the decolorization of MO dye under present experimental conditions followed pseudo-first-order kinetics. These results suggested that CdS QDs/chitosan composite films were suitable material for potential application in decolorization of organic dye pollutants under visible light irradiation.     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

Structural, optical and photoelectrochemical characterization of CdS nanowire synthesized by chemical bath deposition and wet chemical etching

Nanocrystalline thin films of CdS have been grown onto flexible plastic and titanium substrates by a simple and environmentally benign chemical bath deposition (CBD) method at room temperature. The films consist of clusters of CdS nanoparticles. The clusters of CdS nanoparticles in the films were successfully converted into nanowire (NW) networks using chemical etching process. The possible mechanism of the etching phenomenon is discussed. These films were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectrophotometry techniques, respectively. Photoelectrochemical (PEC) investigations were carried out using cell configuration as n-CdS/(1 M NaOH + 1 M Na₂S + 1 M S)/C. The film of nanowires was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. The nanowires have widths in the range of 50-150 nm and have lengths of the order of a few micrometers. Optical studies reveal that the CdS nanowires have value of band gap 2.48 eV, whereas it is 2.58 eV for nanoparticles of CdS. Finally, we report on the ideality of junction improvement of PEC cells when CdS nanoparticles photoelectrode converted into nanowires photoelectrode.     

Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method

This work investigated the influence of silver plasmon and reduced graphene oxide (rGO) on the photoelectrochemical performance (PEC) of ZnO thin films synthesized by the sol-gel method. The physicochemical properties of the obtained photo-anodes were systematically studied by using several characterization techniques. The x-ray diffraction analysis showed that all samples presented hexagonal wurtzite structure with a polycrystalline nature. Raman and energy dispersive x-ray (EDX) studies confirmed the existence of both Ag and rGO in ZnO:Ag/rGO thin films. The estimated grain size obtained from scanning electron microscopy (SEM) analysis decreased with Ag doping, then increased to a maximum value after rGO addition. The UV-vis transmission spectra of the as-prepared ZnO:Ag and ZnO:Ag/rGO thin films have shown a reduction in the visible range with a redshift at the absorption edges. The bandgaps were estimated to be around 3.17 eV, 2.7 eV, and 2.52 eV for ZnO, ZnO:Ag, and ZnO:Ag/rGO, respectively. Moreover, the electrical measurements revealed that the charge exchange processes were enhanced at the ZnO:Ag/rGO/electrolyte interface, accompanied by an increase in the (PEC) performance compared to ZnO and ZnO:Ag photo-anodes. Consequently, the photocurrent density of ZnO:Ag/rGO (0.2 mA·cm^-2) was around 4 and 2.22 times higher than photo-anodes based on undoped ZnO (0.05 mA·cm^-2) and ZnO:Ag (0.09 mA·cm^-2), respectively. Finally, from the flat band potential and donor density, deduced from the Mott-Schottky, it was clear that all the samples were n-type semiconductors with the highest carrier density for the ZnO:Ag/rGO photo-anode.     

CdS量子点的酿酒酵母仿生合成及光谱表征

以酿酒酵母为载体,常温下利用仿生法成功合成了CdS量子点。荧光发射光谱、紫外吸收光谱以及荧光显微镜照片证明,该方法合成的CdS量子点的荧光发射峰位置在443nm,在紫外灯下能发蓝绿色荧光。透射电子显微镜(TEM)表征结果表明,该仿生法合成的CdS量子点为六方纤锌矿结构。以荧光发射和紫外吸收光谱为性能指标,考察了酿酒酵母生长时期、Cd2+的反应浓度以及反应时间等条件对合成CdS量子点的影响。当酿酒酵母处于生长稳定期初期时,与浓度为0.5mmol.L-1的Cd2+共培养24h后所合成的CdS量子点荧光最强。实验中观察到,换液培养可有效提高酿酒酵母合成CdS量子点的产量。     

ZnO/TiO2 core–shell heterojunction for CdS and PbS quantum dot-cosensitized solar cells

ZnO nanorods (NRs) with regular morphology were prepared through hydrothermal method, and the TiO₂ shell was assembled onto the surface of ZnO NRs by spin coating to the ZnO/TiO₂ core–shell heterojunction. CdS and PbS quantum dots (QDs) were used to cosensitize the ZnO/TiO₂ nanostructure by direct adsorption (DA) and successive ionic layer adsorption and reaction, respectively. SEM, TEM, and HRTEM images show that the samples possessed a rough surface and four lattice fringes indicating the successful synthesis of the ZnO/TiO₂/CdS/PbS composite structure. The ZnO/TiO₂(10T)/CdS/PbS sample showed a high absorption intensity at a broad range of wavelength to visible light region. The ZnO/TiO₂(10T)/CdS/PbS photoelectrode with QDSSCs showed the highest IPCE of 36.04% and photoelectric efficiency (η) of 1.59%; these values increased by approximately 550% and 150% compared with those of unsensitized ZnO (0.29%) and ZnO/TiO₂(10T) (1.04%) and about 146% and 120% compared with those of ZnO/TiO₂(10T)/CdS and ZnO/TiO₂(10T)/PbS, respectively. The fill factor was 0.36, and the photocurrent density (J_sc) and open circuit voltage (V_oc) reached the maximum values of 9.73 mA cm⁻² and 0.46 V, respectively.     

Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density (J_sc) and open circuit voltage (V_oc) i.e. 99 μA/cm² and 376 mV respectively, under 10 mW/cm² of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.     

巯基丙酸分子对CdSe核壳量子点和 ZnO纳米粒子薄膜之间电荷转移的影响

通过稳态光谱和时间分辨荧光光谱研究了巯基丙酸(MPA)分子对由量子点到ZnO纳米粒子薄膜的电荷转移过程的影响。研究发现,相对于CdSe纳米粒子薄膜样品,没有MPA分子参与作用的CdSe/ZnO薄膜样品和有MPA分子连接的CdSe/MPA/ZnO薄膜样品中都存在从CdSe量子点到ZnO纳米粒子薄膜的有效电荷分离过程,但是相对于CdSe/ZnO样品, CdSe/MPA/ZnO样品中电荷转移速率明显变小。这表明MPA分子本身它并不能促进CdSe到ZnO电荷分离过程,因此可以认为用金属氧化物薄膜直接吸附量子点吸收材料,将能获得高功率转换效率的量子点敏化太阳能电池。     

Optical Analysis of Nanocrystalline ZnO Films Coated on Porous Silicon by Radio Frequency (RF) Magnetron Sputtering

Zinc oxide thin films have been deposited onto porous silicon (PSi) substrates at high growth rates by radio frequency (RF) sputtering using a ZnO target. The advantages of the porous Si template are economical and it provides a rigid structural material. Porous silicon is applied as an intermediate layer between silicon and ZnO films and it contributed a large area composed of an array of voids. The nanoporous silicon samples were adapted by photo electrochemical (PEC) etching technique on n-type silicon wafer with (111) and (100) orientation. Micro-Raman and photoluminescence (PL) spectroscopy are powerful and non-destructive optical tools to study vibrational and optical properties of ZnO nanostructures. Both the Raman and PL measurements were also operated at room temperature. Micro-Raman results showed that the A₁(LO) of hexagonal ZnO/Si(111) and ZnO/Si(100) have been observed at around 522 and 530 cm^–1, re- spectively. PL spectra peaks are distinctly apparent at 366 and 368 cm^–1 for ZnO film grown on porous Si(111) and Si(100) substrates, respectively. The peak luminescence energy in nanocrystalline ZnO on porous silicon is blue-shifted with regard to that in bulk ZnO (381 nm). The Raman and PL spectra pointed to oxygen vacancies or Zn interstitials which are responsible for the green emission in the nanocrystalline ZnO.     

ZnS overlayer on in situ chemical bath deposited CdS quantum dot-assembled TiO2 films for quantum dot-sensitized solar cells

ZnS overlayers were deposited on the CdS quantum dot (QD)-assembled TiO₂ films, where the CdS QDs were grown on the TiO₂ by repeated cycles of the in situ chemical bath deposition (CBD). With increasing the CdS CBD cycles, the CdS QD-assembled TiO₂ films were transformed from the TiO₂ film partially covered by small CdS QDs (Type I) to that fully covered by large CdS QDs (Type II). The ZnS overlayers significantly improved the overall energy conversion efficiency of both Types I and II. The ZnS overlayers can act as the intermediate layer and energy barrier at the interfaces. However, the dominant effects of the ZnS overlayers were different for the Types I and II. For Type I, ZnS overlayer dominantly acted as the intermediate layer between the exposed TiO₂ surface and the electrolyte, leading to the suppressed recombination rate for the TiO₂/electrolyte and the significantly enhanced charge-collection efficiency. On the contrary, for Type II, it dominantly acted as the efficient energy barrier at the interface between the CdS QDs and the electrolyte, leading to the hindered recombination rate from the large CdS QDs to the electrolyte and thus enhanced electron injection efficiency.     

Synthesis and characterization of water-soluble, stable and highly luminescent itaconic acid/methacrylic acid copolymer-coated CdSe/CdS quantum dots

The itaconic acid/methacrylic acid (PIA-MAA) copolymer ligand (PIA-MAA) with carboxylate anchoring groups was found to efficiently convert CdSe/CdS core-shell quantum dots (QDs) in chloroform to water-soluble PIA-MAA-ligand stabilized nanocrystals (PIA-MAA-QDs). The quantum yield (QY) of the resulting PIA-MAA-QDs was 24%. In addition, the carboxylate-based PIA-MAA-QDs survived UV irradiation in air for at least 16 days. Upon UV irradiation, the PIA-MAA-QDs became about 2 times brighter than the original CdSe/CdS QDs in chloroform, and the UV-brightened photoluminescence (PL) can retain the brightness for at least several months. Experimental results further confirmed that the PIA-MAA-QDs were more stable than the original CdSe/CdS QDs against strong acid, strong oxidant, photochemical and thermal treatments. The PIA-MAA-QDs were soluble and stable in water, some polar solvents and buffer solutions. In addition to good performance of PIA-MAA-QDs, the synthesis of PIA-MAA ligands and the corresponding water-soluble QDs is relatively simple.     

Free-standing optoelectronic graphene–CdS–graphene oxide composite paper produced by vacuum-assisted self-assembly

Free-standing optoelectronic graphene–CdS–graphene oxide (G–CdS–GO) composite papers were prepared by vacuum-assisted self-assembly. G–CdS hybrids were first prepared by a hydrothermal method and GO acts as a dispersant which makes it easier to disperse them to form relatively stable aqueous suspensions for fabricating paper. Transmission electron microscopy shows that CdS quantum dots (QDs) with an average size of approximately 1–2 nm were distributed uniformly on the graphene sheets. Photoluminescence measurements for the as-prepared G–CdS–GO composite paper showed that the surface defect related emissions of attached CdS QDs decrease and blue shift obviously due to the change in particle size and the interaction of the surface of the CdS QDs with both the GO and the graphene sheets. The resulting paper holds great potential for applications in thin film solar cells, sensors, diodes, and so on.     

Synthesis, microstructure, and photocatalysis of ZnO/CdS nano-heterostructure

ZnO/CdS nano-heterostructure with flower-like morphology is fabricated by a facile two-step precipitation method for use in photocatalytic degradation of organic dyes. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, and UV-vis spectroscopy, demonstrating that the microstructure of the ZnO/CdS nano-heterostructure is composed of flower-like ZnO modified by CdS nanoparticles. The photocatalytic performance of ZnO/CdS nano-heterostructure is evaluated by the photodegradation of rhodamine B under the simulated sunlight, and the result indicates that the ZnO/CdS nano-heterostructure exhibits an appreciable photocatalytic property, which can be attributed to the extended photo-response range and the increased charge separation rate in the heterostructure.     

CdS及其包裹型纳米颗粒PVA基复合膜的特性研究

以聚乙烯醇 (PVA)、六偏磷酸钠为分散剂 ,采用溶胶法合成了 Cd S纳米胶体颗粒 ,制备出 Cd S及其包裹型纳米颗粒 PVA基复合膜。通过光子相干光谱粒度仪 (PCS)、紫外 -可见吸收光谱 (UV- VIS)、荧光光谱 (PL)对样品进行了初步表征。结果表明 ,Cd S纳米颗粒 PVA基复合膜的紫外 -可见吸收光谱有明显的蓝移现象 ,所发荧光主要由表面态发射引起 ;包裹型 PVA基复合膜所发荧光主要由带边发射引起     

ZnO/ZnS核-壳量子点的双光子吸收效应

利用飞秒激光Z-扫描与泵浦-探测技术,研究了室温下ZnO/ZnS与ZnO/ZnS/Ag核-壳胶体量子点的双光子吸收效应.研究发现:ZnO基核-壳量子点的本征双光子吸收系数比ZnO体材料增大了3个数量级;测量得到的660 nm处的ZnO/ZnS核-壳量子点双光子吸收截面约为4.3×10^-44 cm⁴·s·photon^-1,比相应的ZnS、ZnSe及 CdS量子点大2个数量级;当ZnO/ZnS核-壳量子点镶嵌了银纳米点时,非线性吸收有所增强.ZnO基复合纳米结构的双光子吸收增强可归因于量子限域与局域场效应.     

Influence of P<Superscript>+</Superscript>-ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells

In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure and the second one is the ZnO/CdS/ZnTe/P⁺-ZnTe structure with a P⁺-ZnTe layer inserted at the back surface of ZnTe active layer to produce a back surface field effect which could reduce back carrier recombination and thus increase the photovoltaic conversion efficiency of cells. The effect of ZnO, CdS and ZnTe layer thicknesses and the P⁺-ZnTe added layer and its thickness have been optimized for producing maximum working parameters such as: open-circuit voltage V_oc, short-circuit current density J_sc, fill factor FF, photovoltaic conversion efficiency η. The solar cell with ZnTe/P⁺-ZnTe junction showed remarkably higher conversion efficiency over the conventional solar cell based on ZnTe layer and the conversion efficiency of the ZnO/CdS/ZnTe/P⁺-ZnTe solar cell was found to be dependent on ZnTe and P⁺-ZnTe layer thicknesses. The optimization of ZnTe, CdS and ZnTe layers and the inserting of P⁺-ZnTe back surface layer results in an enhancement of the energy conversion efficiency since its maximum has increased from 10% for ZnO, CdS and ZnTe layer thicknesses of 0.05, 0.08 and 2 µm, respectively to 13.37% when ZnO, CdS, ZnTe and P⁺-ZnTe layer thicknesses are closed to 0.03, 0.03, 0.5 and 0.1 µm, respectively. Furthermore, the highest calculated output parameters have been J_sc?=?9.35 mA/cm², V_oc?=?1.81 V, η?=?13.37% and FF?=?79.05% achieved with ZnO, CdS, ZnTe, and P⁺-ZnTe layer thicknesses about 0.03, 0.03, 0.5 and 0.1 µm, respectively. Finally, the spectral response in the long-wavelength region for ZnO/CdS/ZnTe solar cells has decreased at the increase of back surface recombination velocity. However, it has exhibited a red shift and showed no dependence of back surface recombination velocity for ZnO/CdS/ZnTe/P?+?-ZnTe solar cells.     

A Comparative Study of Optical Properties of Thin Films of MPS-encapsulated CdS Quantum Dots and SiO2/MPS-encapsulated CdS Quantum Dots Mixture

Optics and Spectroscopy - The aim of this study is to investigate the optical properties of thin films of MPS-encapsulated CdS quantum dots (QDs) and SiO2/MPS-encapsulated CdS QDs mixture. For this...