ZnO压敏陶瓷中缺陷的介电谱研究

从理论上证明了介电松弛过程在介电谱上等效于电子松弛过程,认为室温下10⁵Hz处特征损耗峰起源于耗尽层处本征缺陷所形成的电子陷阱.在-130—20℃范围内测量了三种配方ZnO陶瓷的介电频谱,发现ZnO压敏陶瓷室温下10⁵Hz处的特征损耗峰在低温下分裂为两个特征峰,认为它们起源于耗尽层中的本征缺陷(锌填隙或/和氧空位)的电子松弛过程.发现ZnO-Bi₂O₃二元系陶瓷特征峰仅仅由锌填隙引起,而ZnO-Bi_{2关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热处理}     

Fe掺杂CaCu3Ti4O12陶瓷的介电性能与弛豫特性研究

采用固相反应法制备了CaCu₃Ti_4-xFe_xO₁₂(0≤x≤0.2)陶瓷,通过X射线衍射、扫描电子显微镜、介电频谱和阻抗谱等手段研究了Fe对CaCu₃Ti₄O₁₂陶瓷的结构和介电性能的影响.研究发现：CaCu₃Ti_4-xFe_{x关键词： 巨介电常数 双阻挡层电容模型 界面极化}     

Study of dielectric and ac impedance properties of Ti doped Mn ferrites

We have reported dielectric and ac impedance properties of Ti doped Mn_1+xFe_2−2xO₄ (0x0.5) ferrites prepared by solid-state reaction method, using dielectric and impedance spectroscopy in the frequency range of 42 Hz–5 MHz, between the temperatures (300K–473K). The dielectric constant and dielectric loss (tan δ) decreases with increasing frequency but these parameters increase with increasing temperature. The dielectric loss tangent curves exhibit dielectric relaxation peaks at high frequencies (3.6 kHz–5 MHz), which are attributed to the coincidence of the frequency of charge hopping between the localized charge states and the external field. The dielectric properties have been explained on the basis of space charge polarization according to Maxwell–Wagner’s two-layer model and the hopping of charge between Fe²⁺ and Fe³⁺ as well as between Mn³⁺ and Mn²⁺ ions at B-sites. The complex impedance analysis has been used to separate grain and grain boundary in studied samples. Two semicircles corresponding to grain and grain boundary have been observed at low temperature, while only one semicircle has been seen at high temperatures. The resistance of grain and grain boundary both increase with Ti⁴⁺ doping.     

Structural,magnetic and dielectric study of Fe2O3 nanoparticles obtained through exploding wire technique

We propose an exploding wire technique based facile approach to prepare Fe₂O₃ nanoparticles in ambient conditions. TG-DSC analysis of the prepared precursor (Fe(OH)₃) nanoparticles were done. The phase, lattice parameter and the average crystallite size were evaluated through X-ray diffraction analysis. The morphology of prepared nanoparticles was studied by scanning electron microscopy and Transmission electron microscope. The functional group formation of Fe₂O₃ nanoparticles and intrinsic stretching vibration bands of Fe–O were estimated through FTIR analysis. The direct band gap of Fe₂O₃ nanoparticles occurring in conjunction with indirect band gaps was established via Tauc plot. The magnetic parameters were studied through Mössbauer spectroscopy, ESR, M-H and M-T plot analysis. The attributes of dielectric behaviour like dielectric constant (ε′), loss tangent (tan δ), dielectric loss (ε″) and alternating current (AC) conductivity (σ_AC) were measured at various temperatures in the frequency range of 10 Hz-10⁶ KHz.     

Induction and control of dielectric relaxation properties in Fe-doped nonstoichiometric SrTiO3 ceramics

The dielectric properties of Fe-doped Ti-rich SrTiO₃ ceramics at both A and B sites were investigated. For A site doping, we found one structural phase transition associated with the substitution of smaller Fe ions, and two sets of dielectric relaxations ascribed to oxygen vacancies and hopping conduction between Fe²⁺ and Fe³⁺, respectively. Cole-Cole relation shows that both thermally activated dielectric relaxation behaviors mainly originate from the grain boundary. However, for B site doping, they are not observed in the measured temperature range since both the short-range diffusion of oxygen vacancies and electron conduction become the long-range migration, which indicates that the additional conductive channels are opened when Fe ion doping changes from A to B site. The results provide an experimental basis for adjusting dielectric properties in paraelectric materials.     

Dielectric and piezoelectric properties of Fe2O3-doped (Na0.5K0.5)0.96Li0.04Nb0.86Ta0.1Sb0.04O3 lead-free ceramics

The effect of a small amount Fe₂O₃ (0.1-2 mol%) doping on the electrical properties of (Na_0.5K_0.5)_0.96Li_0.04Nb_0.86Ta_0.1Sb_0.04O₃ (NKLNTS) ceramics was investigated. It was found that the B-site substitution of Fe³⁺ does not change the crystal structure within the studied doping level and all modified ceramics have a pure tetragonal perovskite structure at room temperature. The addition of Fe₂O₃ can promote the sintering of NKLNTS ceramics, and simultaneously cause the grain growth so that Fe³⁺-doped NKLNTS compositions show degraded densification at higher doping level. Furthermore, the dielectric properties of the NKLNTS ceramics do not show a significant change by Fe₂O₃ doping. However, the addition of Fe₂O₃ was found to have a significant influence on the electric fatigue resistance and the durability against water. The presence of oxygen vacancies caused by the replacement of Fe³⁺ for B-site ions makes the NKLNTS ceramics harder.     

Study on dielectric and magnetic properties of Ho3Fe5O12 ceramics

Ho₃Fe₅O₁₂ ceramics with garnet structure were prepared by the solid-state reaction method. The results revealed the existence of Fe²⁺ ions have intensive influence on dielectric and magnetic properties of Ho₃Fe₅O₁₂ ceramics, which could be further confirmed by oxygen treatment. With a magnetic field lower than 10 kOe, the ME coefficient reaches 33 ps m⁻¹ at room temperature. And the ME coupling was further verified by dielectric anomaly near Néel temperature.     

Dielectric relaxation in LuFeO3 ceramics

LuFeO₃ ceramics were prepared, and the dielectric characteristics were investigated together with the structure. A giant dielectric constant step (8000 at 10 kHz, 7200 at 100 kHz, and 4000 at 1 MHz) very similar to that in LuFe₂O₄ was observed. The dielectric constant dropped quickly when the temperature decreased through a critical temperature which increased significantly when the frequency increased. A very high relaxor-like dielectric peak with strong frequency dispersion was also observed in a higher temperature range. Two obvious corresponding dielectric relaxation peaks were observed on the curve of dielectric loss vs temperature, and all these dielectric relaxations followed the Arrhenius law. The Fe²⁺/Fe³⁺ mixed-valence structure and the oxygen vacancy primarily governed these relxor-like dielectric behaviors. However, the present ceramics are not relaxor ferroelectric.     

Dielectric relaxations in Tb0.91Yb1.38Bi0.71Fe5O12 ceramics

Dielectric relaxations of Tb_0.91Yb_1.38Bi_0.71Fe₅O₁₂ ceramics were investigated. A Debye-type relaxation was observed in the temperature range of 125-620 K with an activation energy of 0.29 eV. This activation energy agreed well with that of carriers hopping between Fe²⁺ and Fe³⁺, indicating that this relaxation might be a dipolar-type relaxation associated with the hopping carries. A high relaxorlike dielectric peak with a very strong frequency dispersion in the high temperature range of 400-620 K might be originate from the oxygen vacancies related dielectric relaxation.     

Microstructure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films grown on super smooth glazed-Al2O3 ceramics substrate

Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al₂O₃-SiO₂ (CaAlSi) high temperature glaze with proper additives on the rough-95% Al₂O₃ ceramics substrates. (Ba_0.6Sr_0.4)TiO₃ (BST) thin films were deposited on modified Al₂O₃ substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al₂O₃ substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al₂O₃ substrates were almost consistent with that of BST thin films grown on LaAlO₃ (1 0 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al₂O₃ substrates.     

Impact of annealing atmosphere on the multiferroic and dielectric properties of BiFeO3/Bi3.25La0.75Ti3O12 thin films

Multiferroic BiFeO₃/Bi_3.25La_0.75Ti₃O₁₂ films annealed in different atmospheres (N₂ or O₂) were prepared on Pt/Ti/SiO₂/Si substrates via a metal organic decomposition method. Based on our experimental results, it is considered that, in the films annealed in N₂, fewer Fe²⁺ ions while more oxygen vacancies are involved. As a result, at room temperature, predominated by the reduced Fe²⁺ fraction, lower leakage current and dielectric loss, better ferroelectric property while reduced magnetization are observed. However, the oxygen vacancies might be thermally activated at elevated temperature; thus, more strongly temperature-dependent leakage current and a higher dielectric relaxation peak are observed for the films annealed in N₂.     

Study of dielectric and impedance properties of Mn ferrites

The paper reports on the effect of Al substitution on the structural and electrical properties of bulk ferrite series of basic composition MnFe_2−2xAl_2xO₄ (0.0≤x≤0.5) synthesized using solid state reaction method. XRD analysis confirms that all the samples exhibit single phase cubic spinel structure excluding presence of any secondary phase. The dielectric constant shows a normal behaviour with frequency, whereas the loss tangent exhibits an anomalous behaviour with frequency for all compositions. Variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Fe⁺² and Fe⁺³ as well as between Mn⁺² and Mn⁺³ ions at octahedral sites. The complex impedance plane spectra shows the presence of two semicircles up to x=0.2, and only one semicircle for the higher values of x. The analysis of the data shows that the resistive and capacitive properties of the Mn ferrite are mainly due to processes associated with grain and grain boundaries.     

Evolution of microstructure and dielectric properties of (LiCe)-doped Na0.5Bi2.5Nb2O9 Aurivillius type ceramics

Aurivillius type (NaBi)_0.5?x(LiCe)_xBi₂Nb₂O₉ ceramics were prepared by the standard ceramics route. The single crystal structural ceramics were achieved for all compositions and lattice distortion was decreased by (LiCe) dopants. The temperature dependent dielectric properties revealed that all compositions possess a high Curie-temperature (>780 °C). A modified Curie–Weiss relationship is used to study the diffuseness behavior of a ferroelectric phase transition indicating the degree of diffuseness of NBN-based ceramics increased with (LiCe) modifications. The degradation of resistance implied a plausible model that Ce⁴⁺ ions entered into the B-site of the pseudo-perovskite structure and acted as acceptor doping. Further investigation demonstrated that both electrical conduction and dielectric relaxation processes were associated with the oxygen vacancies produced by the substitution of Nb⁵⁺ ions by the Ce⁴⁺ ions.     

Effect of Sm,Co codoping on the dielectric and magnetoelectric properties of BiFeO3 polycrystalline ceramics

Multiferroic Bi_0.95Sm_0.05Fe_1−xCo_xO₃ (x=0−0.1) ceramics were prepared by the rapid liquid phase sintering method. For all the samples studied, the dielectric constant and dielectric loss decrease with increasing frequency in the range from 1 kHz to 1 MHz. It shows that the dielectric constant of Bi_0.95Sm_0.05FeO₃ at 10 kHz is about forty times larger than that of pure BiFeO₃. This dramatic change in the dielectric properties of Bi_0.95Sm_0.05Fe_1−xCo_xO₃ (x=0−0.1) samples can be understood in terms of the space charge limited conduction associated with crystal defects, which was indicated by the increase of magnetoelectric effect with doping Co³⁺ under applied magnetic field from 1 to 8 kOe. It was believed that the ferroelectric polarization enhancement comes from the exchange interaction between the Sm³⁺ and Fe³⁺ or Co³⁺ ions for Bi_0.95Sm_0.05Fe_0.95Co_0.05O₃ at room temperature.     

Dielectric properties Ca-substituted barium strontium titanate ferroelectric ceramics

The dielectric and ferroelectric properties of Ba_1−xSr_xTiO₃ (BST) (x=0.10,0.20,0.30,0.40 and 0.60) ceramics and Ba_1−2xSr_xCa_xTiO₃ (BSCT) (x=0.10,0.20,0.30) ceramics have been investigated. The low temperature phase transitions of BST ceramics vanish after Ca²⁺ substitution while the high temperature transition is diffused and relaxed, which becomes more obvious with increasing x. Ca²⁺ substitution obviously decreases the dielectric constant maximum, K_m, of BST ceramics and changes the temperature of dielectric constant maximum, T_m, of BST ceramics. The shift of T_m in BST is attributed mainly to the Sr²⁺ and Ba²⁺ concentration. BST ceramics exhibit almost normal ferroelectric characteristics, while a typical relaxor behavior was observed in BSCT ceramics. The relaxor behavior observations may be understood by a random electric field induced domain state.     

Effect of chemical modification on the structure and dielectric and magnetic properties of multiferroic (1 – x)BiFeO3-xDyFeO3 solid solution

The solid solution of (1-x)BiFeO₃-xDyFeO₃ was prepared by solid state reactions in the form of ceramics. The effects of chemical modification by means of aliovalent ionic substitution of Ti⁴⁺ for Fe³⁺ on the structure and dielectric properties were investigated. A morphotropic phase boundary bridging the perovskite rhombohedral phase and the orthoferrite orthorhombic phase was identified at x around 0.1. The chemical modification was found to stabilize the perovsite phase. The dielectric performance of the solid solution was improved by the substitution of Ti⁴⁺ for Fe³⁺, which decreased the electric conductivity by reducing oxygen vacancies, as evidenced by the decrease in loss tangent values. Magnetic hysteresis and large saturated magnetization (0.5 μ_B/f.u.) were realized in 0.92BiFeO₃-0.08DyFeO₃ with 2% substitution of Ti⁴⁺ for Fe³⁺, which is believed to arise from the disruption of the spiral spin modulation after structural modification, and the interaction between the spins of the Dy³⁺ and Fe³⁺ at low temperatures which decouples the antiferromagnetic order between the Fe³⁺ ions.     

Microstructures and microwave dielectric properties of La1-xBx(Mg0.5Sn0.5)O3 ceramics

The microwave dielectric properties of La_1-xB_x(Mg_0.5Sn_0.5)O₃ ceramics were examined with a view to their exploitation for mobile communication. The La_1-xB_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La_0.995B_0.005(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. A maximum apparent density of 6.58 g/cm³, a dielectric constant (ε_r) of 19.8, a quality factor (Q × f) of 41,800 GHz, and a temperature coefficient of resonant frequency (τ_f) of −86 ppm/°C were obtained for La_0.995B_0.005(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1500 °C for 4 h.     

Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics

La_0.5Bi_0.5MnO₃ ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were identified in the temperature range from 125 to 350 K. The electron hopping between Mn³⁺ and Mn⁴⁺ was found to be the origin of the dielectric relaxation at low temperatures (125–200 K) with an activation energy of 0.18 eV. The high temperature (200–350 K) dielectric relaxation can be attributed to the conduction.     

Low- and infralow-frequency dielectric properties of the Pb(Mg1/3Nb2/3)O3 + 2 wt % Li2O ceramics

A dielectric response of the Pb(Mg_1/3Nb_2/3)O₃ ferroelectric ceramics with impurity of 2 wt % Li has been studied. The phase transition has been found to exhibit a relaxor character, as is the case in PMN without Li. However, unlike pure PMN, the dielectric response dispersion in PMN + 2 wt % Li₂O has been described by the Cole-Cole equation at temperatures below the temperature of the low-frequency maximum of the permittivity. An analysis of the dispersion parameters in a wide temperature range has demonstrated that it can be due to the relaxation of domain walls in PMN + 2 wt % Li₂O that appear most likely because of the existence of anomalously coarse grains in PMN + 2 wt % Li₂O.     

Sintering and electrical properties of Na0.5K0.5NbO3 ceramics modified with lanthanum and iron oxides

Effects of La³⁺, Fe³⁺ doping and their co-doping on the sintering, structures and electrical properties of Na_0.5K_0.5NbO₃ (NKN) ceramics were investigated. A significant modification of sintering behavior can be obtained by the addition of Fe₂O₃. On the contrary, the addition of La₂O₃ and La–FeO₃ tends to degrade the densification. Moreover, Fe³⁺ doping does not change the crystal structure, thus leading to an unchanged Curie temperature. Owing to a transition from orthorhombic to pseudo-cubic structures, the Curie temperatures of NKN ceramics were significantly lowered by doping La₂O₃ and La–FeO₃. NKN ceramics modified with a small amount of Fe₂O₃ and La–FeO₃ (less than 0.5 mol%) exhibit improved ferroelectric, piezoelectric and electromechanical properties.