有机自旋阀的磁电阻性质研究

考虑到有机半导体中极化子和双极化子特殊的电荷-自旋关系,从自旋扩散方程和欧姆定律出发,理论研究了"铁磁/有机半导体/铁磁"有机自旋阀结构中的磁电阻性质.计算发现,磁电阻在数值上随有机半导体层中极化子比率的增加而增大,随有机半导体层厚度的增加而迅速减小.同时发现自旋相关界面电阻能在很大程度上提高系统的磁电阻.讨论了铁磁层和有机半导体电导率比率、铁磁层极化率等对系统磁电阻性质的影响. 关键词： 磁电阻 有机自旋电子学 极化子     

Co掺杂的ZnO稀磁半导体块体的退火热处理研究

采用固相反应法制备了Zn_0.95Co_0.05O块体样品,并对其进行了不同方式的退火处理.实验表明在锌气氛中500℃退火的样品表现出铁磁性,而在真空中退火的样品却没有磁性,进一步,在锌气氛中1100℃退火的样品虽然表现出铁磁性,但其铁磁性来源于样品在锌气氛中1100℃退火过程中产生了1%左右的Co金属团簇杂质相.另外,在低温时所有样品都表现出较大的正磁电阻,认为正磁电阻效应是由于s-d电子交换相互作用引起的自旋劈裂造成的,而高场时出现的负磁电阻效应则可能归因于磁场 关键词： Co掺杂ZnO X射线衍射 铁磁性 磁电阻     

Current-induced effect on resistivity and magnetoresistance of La0.67Ba0.33MnO3 manganite

The influence of dc biasing current on temperature dependence of resistivity and low-field magnetoresistance (MR) of La_0.67Ba_0.33MnO₃ bulk sample is reported. A prominent finding is the change in resistivity around the insulator-to-metal transition temperature (T_IM) and the change in MR around the ferromagnetic transition temperature (T_C). The decrease in MR around T_C at higher biasing current indicates a strong interaction between carrier spin and spin of Mn ions resulting in a higher alignment of Mn ion spins. Change in resistivity around T_IM is interpreted in the framework of percolative conduction model based on the mixed phase of itinerant electrons and localized magnetic polarons.     

Linear magnetoresistance effect in lateral magnetic superlattices

Two-dimensional electron gas systems modulated by a lateral magnetic superlattice are proposed and the related magnetoresistance effect is described in this work. It is found that the magnetoresistance (MR) ratio of the given structures depends strongly on the uniform magnetic field, and the peaks of the MR ratio depressed linearly with the increase of the uniform magnetic field. This feature can be utilized in practical linear magnetoresistance (LMR) devices.     

Competing ferromagnetic and charge-ordered states in models for manganites: the origin of the colossal magnetoresistance effect

The one-orbital model for manganites with cooperative phonons and superexchange coupling JAF is investigated via large-scale Monte Carlo simulations. The results for two orbitals are also briefly discussed. Focusing on the electron density n=0.75, a regime of competition between ferromagnetic metallic and charge-ordered (CO) insulating states is identified. In the vicinity of the associated bicritical point, colossal magnetoresistance (CMR) effects are observed. The CMR is associated with the development of short-distance correlations among polarons, above the spin ordering temperatures, resembling the charge arrangement of the low-temperature CO state.     

La0.67Ca0.33MnO3单晶中Fe的掺杂提高本征磁电阻率和激活能的研究

La_0.67Ca_0.33MnO₃ and La_0.67Ca_0.33Mn_0.96Fe0.04O₃单晶的磁性和磁电阻特性。由于缺少晶粒间界，磁场对于自旋涨落的抑制作用更加明显，所以单晶中的磁电阻率比多晶的提高了两个数量级。通过Fe的掺杂，在40×10⁵A/m的磁场下，磁电阻率从3400%进一步提高到了17600%。通过对居里温度以上电阻率的小极化子模型拟和的结果，我们看到随着Fe的掺杂，激活能被提高。磁极化子激活能的增大可以更加局域电子，这可能是在Fe掺杂单晶中本征磁电阻率进一步提高的主要原因。     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.     

Observation of quadratic magnetoresistance in twisted double bilayer graphene

Magnetoresistance ({MR}) provides rich information about Fermi surface, carrier scatterings, and exotic phases for a given electronic system. Here, we report a study of the magnetoresistance for the metallic states in twisted double bilayer graphene (TDBG). We observe quadratic magnetoresistance in both Moiré valence band (VB) and Moiré conduction band (CB). The scaling analysis shows validity of Kohler's rule in the Moiré valence band. On the other hand, the quadratic magnetoresistance appears near the halo structure in the Moiré conduction band, and it violates Kohler's rule, demonstrating the {MR} scaling related to band structure in TDBG. We also propose an alternative scaling near the halo structure. Further analysis implies that the observed quadratic magnetoresistance and alternative scaling in conduction band are related to the halo boundary. Our results may inspire investigation on {MR} in twisted 2D materials and provide new knowledge for {MR} study in condensed matter physics.     

Description of the Colossal Magnetoresistance of La 1.2 Sr 1.8 Mn 2 O 7 Based on the Spin-Polaron Conduction Mechanism in the Ferromagnetic Temperature Range

We have analyzed the resistance of La1.2Sr1.8Mn2(1 – z)O7 single crystal in magnetic fields from 0 to 90 kOe in the ferromagnetic temperature range. The observed magnetoresistance of La1.2Sr1.8Mn2O7 is described based on the spin-polaron conduction mechanism. The magnetoresistance is determined by the change in the sizes and magnetic moment directions of magnetic inhomogeneities (polarons). It is shown that the colossal magnetoresistance is ensured by an increase (along the magnetic field) of the polaron linear size. It is found using the method for separating the contributions of different conduction mechanisms to the magnetoresistance that the contribution to the magnetoresistance from the orientation mechanism at 80 K in low magnetic fields is close to 50%. With increasing magnetic field, this contribution decreases and becomes small in fields exceeding 30 kOe. The comparable contributions to the conductivity from the orientational and spin-polaron mechanisms unambiguously necessitate the inclusion of both conduction mechanisms in the magnetoresistance calculations. We have calculated the temperature variation of the polaron size (in relative units) in zero magnetic field and in a magnetic field of 90 kOe.     

Magnetization reversal of single domain permalloy nanowires

Magnetization reversal process and magnetoresistance (MR) hysteresis of single domain permalloy nanowires are numerically investigated by using OOMMF. It is shown that the abrupt jumps in the magnetoresistance are due to the domain formation and domain wall propagation so that a magnetic domain suddenly switches from one state into another. A nonmonotonic angular dependence of the jump (switching) field is found. Coherent rotation mode is responsible for the smooth variation of MR curves. The nucleation pattern of newly born domains depends on the tilted angle of external field.     

Bipolaron mechanism for organic magnetoresistance

We present a mechanism for the recently discovered magnetoresistance in disordered pi-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.     

Negative magnetoresistance of amorphous selenium and tellurium doped selenium

Negative magnetoresistance (MR) has been observed in bulk amorphous selenium and bulk tellurium doped selenium samples. The negative MR is found to decrease with tellurium doping. The experimental results are discussed in the light of various already existing models for negative MR.     

Transport properties and magnetoresistance behavior of Nd0.7Pb0.3MnO3 single crystals

Single crystals of Nd_0.7Pb_0.3MnO₃ with large crystal size were obtained by the flux growth. The temperature dependence of the resistivity and magnetoresistance was measured. It has been discovered that a phase transition occurs from a ferromagnetic-metal (FM) to a ferromagnetic-insulator (FI) phase at 120 K, below the Curie temperature. At the Curie temperature, the samples exhibit a larger value of magnetoresistance (MR) than polycrystalline samples. The second peak of the magnetoresistance has been observed on MR(T) curve below the Curie temperature. The transition properties and magnetoresistance behavior were discussed.     

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high-mobility (100) Si-inversion layers

We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of its orbital origin. In the hopping regime, however, the MR contains a weak anisotropic component that is nonmonotonic in the magnetic field. We found that the field, at which the MR saturates, varies for different samples by a factor of 2 at a given carrier density. Therefore, the saturation of the MR cannot be identified with the complete spin polarization of free carriers.     

The electrical transport behavior of Zn-treated Zn1-xMnxO bulks

Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature,paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect,which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.     

The magnetoresistance effect in a nanostructure with the periodic magnetic barriers

The magnetoresistance (MR) effect is theoretically investigated in a periodic magnetically modulated nanostructure, which can be realized experimentally by depositing periodic parallel ferromagnetic strips on the top of a heterostructure. We find that there exists a significant conductance difference for electrons through the parallel (P) and antiparallel (AP) magnetization configurations, which results in a considerable magnetoresistance effect. We also find that the magnetoresistance effect depends not only on the temperature but also on the number of the periodic magnetic barriers.     

多晶钙钛矿锰氧化物中的巨磁电阻与磁场关系

本论文研究了多晶锰氧化物磁电阻和磁场的关系,在低温和低场下,磁性纳米团簇的磁矩转动和晶粒边界的自旋二级隧穿对磁电阻起主要作用因高于Tc时,由弱化强度随温度关系的实验结果指出顺磁态中已出现铁磁团簇,因此它类似于磁性颗粒膜中的巨磁电阻（CMR）机制;在顺磁－铁磁相变区,既有颗粒贡献又有界面的隧道贡献,这一理论模型与多晶La0.825Sr0.175MnO3中的实验结果很好地吻合。     

Separating positive and negative magnetoresistance in organic semiconductor devices

We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq_{3}), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The transition from negative to positive magnetoresistance (MR) is found to be accompanied by an increase in slope of log(I) versus log(V). ac admittance measurements show this transition coincides with the onset of minority charge (hole) injection in the device. All these observations are consistent with two simultaneous contributions with opposite sign of MR, which may be assigned to holes and electrons having different magnetic field responses.     

Magnetoresistance dependence on electrical contact geometry and field alignment in mesoscopic rectangular rings

We investigate the magnetoresistance (MR) responses in a ferromagnetic rectangular ring structure using a four-point probe technique. The measured MR curves are strongly dependent on the electrical contact geometries used. The associated MR characteristics are elucidated by a combination of micromagnetic simulations and resistor-network based model, and the MR contributions from different portions of the ring were studied quantitatively. The systematic angular MR measured at the ring corner further show that the locations of the domain wall nucleation are very sensitive to the field alignment.     

Hopping conductivity and Coulomb correlations in 2D arrays of Ge/Si quantum dots

The temperature and magnetic-field dependences of the conductivity associated with hopping transport of holes over a 2D array of Ge/Si(001) quantum dots with various filling factors are studied experimentally. A transition from the Éfros-Shklovski? law for the temperature dependence of hopping conductivity to the Arrhenius law with an activation energy equal to 1.0–1.2 meV is observed upon a decrease in temperature. The activation energy for the low-temperature conductivity increases with the magnetic field and attains saturation in fields exceeding 4 T. It is found that the magnetoresistance in layers of quantum dots is essentially anisotropic: the conductivity decreases in an increasing magnetic field oriented perpendicularly to a quantum dot layer and increases in a magnetic field whose vector lies in the plane of the sample. The absolute values of magnetoresistance for transverse and longitudinal field orientations differ by two orders of magnitude. The experimental results are interpreted using the model of many-particle correlations of holes localized in quantum dots, which lead to the formation of electron polarons in a 2D disordered system.