Point contact tunnelling studies on ceramic YBCO with scanning tunnelling microscope tips

A detailed study of point contact tunnelling into ceramic YBCO with electrochemically etched tips of Pt, Nb and W is reported. The superconducting gap parameter (Δ) has been extracted fromI —V and dI/dV —V curves using various procedures. Our results indicate a gap value of about 20 meV. We observe that the zero bias conductance is strongly dependent on the junction resistance. The normal state conductance varies linearly with bias voltage and the conductance curves are asymmetric with respect to polarity of the bias voltage. With contacts of very high junction resistance, we observe G(0)/G(100 mV) has a value as low as 1/6. This may be the lowest value reported so far.     

Modification of electrical properties of tungsten oxide nanorods using conductive atomic force microscopy

Electrical conduction of tungsten oxide nanorods has been characterized by conductive atomic force microscopy (C-AFM). The conduction measurements were carried out in air using a conductive P⁺-type diamond-coated tip. This technique allows either the simultaneous measuring of the topography and the special current distribution or the recording of the current voltage distribution in a single point mode. We have proposed an equivalent electrical circuit which allows us to understand the I(V) curves. During C-AFM observations we have observed significant changes in image contrast and hysteresis in the I(V) characteristics which depend on the applied bias voltage. The bias dependence effect is interpreted as being due to a local oxidation-reduction phenomenon induced by the tip in the presence of water.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,Optical, and Electrical Characteristics of Zinc Oxide and Copper Oxide Films and Their Heterojunctions

In this paper, n-Zinc oxide/p-copper oxide heterojunctions were fabricated by RF-sputtering on indium tin oxide-covered glass substrates. The structural and optical properties of the copper oxide and zinc oxide films were analyzed by X-ray diffraction, Fourier transform infrared, scanning electronic microscopy and ultraviolet-visible spectroscopy. The electrical junction properties were investigated by current–voltage (I–V) characteristics. Additionally, both capacitance (C) and conductance (G) versus frequency (f) measurements were realized at room temperature. The junctions showed a rectifying behavior, and C and G varied with both voltage and frequency.     

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I--V--T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V_j, excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V_j needs to be smaller than the barrier height Ф. With proper scheme of series resistance connection where the condition of V_j > Ф is guaranteed, I--V--T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I--V--T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I--V--T curves only for small barrier height inhomogeneity.     

超薄栅超短沟LDD nMOSFET中栅电压对栅致漏极泄漏电流影响研究

本文研究了90nm CMOS工艺下栅氧化层厚度为1.4 nm沟道长度为100 nm的轻掺杂漏(LDD)nMOSFET栅电压V_G对栅致漏极泄漏 (GIDL)电流I_d的影响,发现不同V_G下ln (I_d/(V_DG-1.2))-1/(V_DG-1.2)曲线相比大尺寸厚栅器件时发生了分裂现象. 通过比较V_G变化下ln(I_d/(V_DG-1.2))的差值,得出V_G与这种分裂现象之间的作用机理,分裂现象的产生归因于V_G的改变影响了GIDL电流横向空穴隧穿部分所致. 随着|V_G|的变小,ln(I_d/(V_DG-1.2))曲线的斜率的绝对值变小.进一步发现不同V_G对应的ln (I_d/(V_DG-1.2))曲线的斜率c及截距d与V_G呈线性关系,c,d曲线的斜率分别为3.09和-0.77. c与d定量的体现了超薄栅超短沟器件中V_G对GIDL电流的影响,基于此,提出了一个引入V_G 影响的新GIDL电流关系式.     

Photo-induced charge transport in SiO2films containing Si nanocrystals

Photo-induced charge transport is reported in metal–insulator–semiconductor structures containing Si nanocrystals produced by ion implantion and annealing. Successive shifts in current–voltage (I–V) and capacitance–voltage (C–V) curves are shown to be induced by ultra-violet (UV) light exposure under no bias. These shifts are shown to be enhanced by the application of a negative bias voltage during illumination. The application of a positive bias voltage during illumination is shown to reverse the direction of the shifts in both the I–V and C–V curves. This behaviour can be explained by charging of the nanocrystals induced by photoionization of electrons and charge movements in the insulator layer.     

First-principles study of current–voltage characteristics of two-terminal carbon nanostructures

We present the first-principles investigation of the transport properties of nanotubes connected to metal electrodes under external bias potential. We have developed the technique to calculate the current–voltage (I–V) curves by using the local-density approximation in the density-functional theory. We apply this technique to Al-nanotube-Al systems with different contact geometries regarding the position, the orientation, and the distance of nanotube to the electrode. These different geometries at contact can play an important role in the transport properties. The I–V curves have the different behaviors although the nanotube is connected to the same electrode. The transmission rate from one electrode to the other electrode shows strong dependence on the contact geometry.     

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

A set of MOS structures with thin SiO₂ layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U _ac - V _G curves). By comparing the A-DLTS spectra, U _ac - V _G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.     

Degradation of the transconductance of gate-modulated generation current in nMOSFET

The degradation of transconductance (G) of gate-modulated generation current I_GD in LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (Q_L) makes the effective drain voltage minish. Accordingly, the G peak in depletion (G_MD) and that in weak inversion (G_MW) decrease. It is found that Δ G_MD and Δ G_MW each have a linear relationship with the n-th power of stress time (tⁿ) in dual-log coordinate: Δ G_MD ∝ tⁿ, Δ G_MD ∝ tⁿ (n=0.25). During the alternate stress, the injected holes neutralize Q_L induced by the previous EIS. This neutralization makes the effective V_D restore to the initial value and then the I_GD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Q_C). As a result, G_MW only recovers to the circa 50% of the initial value after the hole-injection-stress (HIS). Instead, G_MD is almost recovered. The relevant mechanisms are given in detail.     

Probing of energy gap distribution in superconducting tunnel junctions by low temperature scanning electron microscopy

A two-dimensional voltage image of the energy gap distribution of a superconducting tunnel junction was obtained by scanning the current biased junction with an electron beam and detecting the voltage change δV. The value of the energy gap at the point of irradiation was determined quantitatively from the δV σ(V) curves, where σ(V) is the electric conductance of the junction. Further the quasiparticle diffusion length was found by measuring the length of the transition between a high- and low-gap region generated by a double tunnel junction configuration. The theoretical predictions could be verified by investigating a double tunnel junction configuration, where the energy gap could be changed deliberately by quasiparticle injection.     

Inhomogeneities in 130 MeV Au ion irradiated Au/n-Si (1 0 0) Schottky structure

The electrical characteristics of Au/n-Si (1 0 0) Schottky rectifier have been studied in a wide irradiation fluence range using conventional current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V characteristics showed an abnormal increase in forward current at low voltage. The device shows a bend in forward I-V and reverses bias C-V characteristics due to extra current, suggesting that there are two independent contributions to thermionic current, corresponding to two levels of the Schottky barrier. It is shown that the excess current at low voltage can be explained by taking into account the role of heavy ion irradiation induced defects at the metal semiconductor interface.     

Self‐assembly of poly(3‐hexylthiophene) nanowire networks by a mixed‐solvent approach for organic field‐effect transistors

Organic field‐effect transistors (OFETs) based on interconnected nanowire networks of P3HT have been successfully fabricated by using a mixed‐solvent method. The nanowire network density can be tuned by controlling the anisole/chlorobenzene ratio of mixed solvents. The obtained field‐effect mobility, threshold voltage and the ratio of on‐state current and off‐state current (I_on/I_off) was 0.0435 cm²/V s, –10 V and 1.75 × 10⁴, respectively. The three‐dimensional and interconnected nanowire structure of the networks can enhance the charge transport in P3HT.

     

Inelastic resonance tunneling in S-Sm-S tunnel structures

Inelastic resonance tunneling through junctions with an amorphous interlayer and superconducting electrodes is studied. The form of the current-voltage characteristic I(V) at low temperature and the temperature dependence of the conductance G(0) at low bias are calculated and are found to be much different from the analogous dependences of structures with normal electrodes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 2, 159–163 (25 January 1997)     

Analysis of dark current contributions in mercury cadmium telluride junction diodes

An analytical approach to analyze the dark current–voltage (I–V) and dynamic impedance vs reverse bias voltage (R_d–V) characteristics of an HgCdTe junction diode is presented in this paper. Application to the experimental data is discussed to illustrate the approach. It is shown that the relative contributions of the various dark current contributing mechanisms viz. diffusion, generation–recombination, thermal trap assisted tunneling, band-to-band tunneling, avalanche multiplication and ohmic current component can all be isolated, if present.     

Temperature dependence of rectification and photovoltaic effects in regioregular poly(3-alkylthiophene) films at the Schottky junction with Al electrode

Current–voltage (I–V) characteristics of regioregular (head–tail) poly(3-hexylthiophene), HT-PHT films in the sandwich cell structure of Al/HT-PHT/Au have been studied as a function of temperature. The cells showed typical rectification characteristics with the ratio of more than 10³, indicating the formation of the Schottky type junction at the interface of Al/HT-PHT. The temperature dependence of I–V characteristics at the forward biases are discussed with the bulk property of the HT-PHT. The reversed current and its characteristics are discussed taking the thermionic emission and diffusion models at the junctions of Al/HT-PHT into consideration.     

Tuning of the open‐circuit voltage by wide band‐gap absorber and doped layers in thin film silicon solar cells

We present an experimental study combined with computer simulations on the effects of wide band‐gap absorber and window layers on the open‐circuit voltage (V_oc) in single junction thin film silicon solar cells. The quantity ΔE_p, taking as the difference between the band gap and the activation energy in ?p? layer, is treated as a measure of the p‐layer properties and shows a linear relation with V_oc over a range of 100 mV with a positive slope of around 430 mV/eV. Two limiting mechanisms of V_oc are identified: the built‐in potential at lower ΔE_p and the band gap of the absorber layer at higher ΔE_p. The results of the experimental findings are confirmed by computer simulations. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Investigation of fill factor losses on 20.2% efficient n‐type mono‐like silicon solar cells with laser contact opening

Large area (243.36 cm²) back‐junction passivated emitter, rear totally diffused (PERT) solar cells with laser contact opening (LCO) on n‐type mono‐like crystalline Si with efficiencies of 20.2% are presented. Boron emitters with high electrical quality (implied open circuit voltage iV_OC up to 700 mV) are formed during a co‐diffusion step using SiO_x:B layers. Increasing the rear metal contact coverage, we observed a decrease in fill factor (FF) instead of the expected increase due to the decrease of the back side series resistance. We show that it can be attributed to recombination centers (RCs) in the space charge region underneath the contact spots inducing an increasing second diode contribution. The presented empirical model for the RCs implemented in Synopsys Sentaurus TCAD allows for a successful reproduction of the FF, pseudo FF and V_OC behaviour with contact coverage. According to this model, the RCs induced by laser ablation and subsequently evaporation of Al have a shallow exponential distribution with a characteristic length of L_T = 0.2 µm and an effective surface density of N *_T0 = 25 cm^–1. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of series resistance and interface states on the I-V, C-V and G/ω-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

The forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at room temperature by taking the interface states (N_ss) and series resistance (R_s) effects into account. The voltage dependent profiles of resistance (R_i) were obtained from both the I-V and C/G-V measurements by using Ohm’s Law and Nicollian methods. The obtained values of R_i with agreement each other especially at sufficiently high bias voltages which correspond the value of R_s of the diode. Therefore, the energy density distribution profile of N_ss was obtained from the forward bias I-V data taking the bias dependence of the effective barrier height (BH) Φ_e and R_s into account. The high value of ideality factor (n) was attributed to high density of N_ss and interfacial polymer layer at metal/semiconductor (M/S) interface. In order to examine the frequency dependence of some of the electrical parameters such as doping donor concentration (N_D), Φ_e, R_s and N_ss values, C-V and G/ω-V measurements of the diode were performed at room temperature in the frequency range of 50 kHz-5 MHz. Experimental results confirmed that the N_ss, R_s and interfacial layer are important parameters that influence electrical characteristics of SBD.     

Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase‐change memory

A simple layered phase‐change random access memory (PRAM) cell was fabricated using the In₃Sb₁Te₂ alloy. The overall resistance value of the reset state was about 70 times larger than that of the set state. The resistance difference between the amorphous and crystalline state was fairly well maintained after 10² cycles. Interestingly, the measured current–voltage (I –V) curve showed three obvious steps in the crystalline state. By means of high temperature X‐ray diffractometry (HTXRD) and differential scanning calorimetry (DSC) experiments, we confirmed that the current steps originate from successive structural transformations of the In₃Sb₁Te₂ ternary alloy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)