Ionic diffusion and local hopping in copper chalcohalide glasses measured using Cu tracer and I-Mössbauer spectroscopy

For the first time, ⁶⁴Cu tracer measurements of ionic diffusion were performed for several copper-rich glass compositions in the CuI---As₂Se₃, CuI---SbI₃---As₂Se₃, CuI---PbI₂---As₂Se₃, CuI---PbI₂---SbI₃---As₂Se₃ and Cu₂Se---As₂Se₃ systems. In accordance with previous a.c. impedance results and Wagner d.c. polarization measurements, it was found that pure Cu⁺ ion-conducting glasses (50CuI---17PbI₂---33As₂Se₃ and 50CuI---20PbI₂---10SbI₃---20As₂Se₃) exhibit the highest copper tracer diffusion coefficients, D_Cu, and the lowest diffusion activation energies. The values of D_Cu at room temperature are higher by 4.5–5.5 orders of magnitude than those in an As₂Se₃ glass. The Haven ratio, H_R, is found to be 0.52–0.61 (ternary glass) and 0.93–1.00 (quaternary glass). Short-range diffusional displacements of the iodide ions induced by the hopping Cu⁺ ions are also detected in the CuI---PbI₂---SbI₃---As₂Se₃ glassy system using ¹²⁹I-Mössbauer spectroscopy in the temperature range of 4.2 to 305 K. The activation energy of local hopping, E_h ≈ 0.31 eV, is very similar to that of bulk ionic conductivity (0.37 eV) and copper diffusion (≈ 0.33 eV). In contrast to CuI-based vitreous alloys, 50Cu₂Se---50As₂Se₃ glass exhibits D_Cu that are two to five orders of magnitude lower, and the copper ion transport number, t_Cu⁺, is between 10⁻³ and 10⁻⁴ in the temperature range 140–170 °C.     

δ-(Zn,Cr)S(111)表面上的Dzyaloshinsky-Moriya作用:第一性原理计算

根据密度泛函理论的第一性原理计算了具有非中心反演对称的异质结δ-(Zn,Cr)S(111)体系的原子结构和电子结构.Cr原子之间通过第一层S原子传递磁性相互作用.结合广义布洛赫条件,又进一步计算了反方向的自旋螺旋能量与波矢的色散关系E(q)与E(-q).E(q)与E(-q)能量之差反映了δ-(Zn,Cr)S(111)的S层与Cr层之间空间反演对称性破缺引起的DMI的大小.通过海森伯相互作用(HBI)模型与Dzyaloshinsky-Moriya作用(DMI)模型拟合第一性原理计算值,得到了Cr原子间各近邻的HBI参数J_1-J_4与DMI参数d-_1,d_2.在δ-(Zn,Cr)S(111)中,Cr原子间的耦合为M型反铁磁.DMI参数d_1为-0.53 meV,为顺时针手性DMI,在δ-(Zn,Cr)S(111)界面上有可能会产生斯格明子.本文计算表明,磁性和非磁性半导体界面有可能存在DMI,为理论研究和磁存储技术的进步开拓一个新的方向.     

Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4

Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.     

Magnetic order driven by orbital ordering in the semiconducting KFe1.5Se2

The two-orbital Hubbard model is studied numerically by using the Hartree-Fock approximation in both real space and momentum space, and the ground-state properties of the alkali metal iron selenide semiconducting KFe_1.5Se₂ are investigated. A rhombus-type Fe vacancy order with stripetype antiferromagnetic (AFM) order is found, as was observed in neutron scattering experiments [J. Zhao, et al., Phys. Rev. Lett. 109, 267003 (2012)]. Hopping parameters are obtained by fitting the experimentally observed stripe AFM phase in real space. These hopping parameters are then used to study the ground-state properties of the semiconductor in momentum space. It is found to be a strongly correlated system with a large on-site Coulomb repulsion U, similar to the AFM Mott insulator — the parent compound of copper oxide superconductors. We also find that the electronic occupation numbers and magnetizations in the d_xz and d_yz orbitals become different simultaneously when U>U_c (～3.4 eV), indicating orbital ordering. These results imply that the rotational symmetry between the two orbitals is broken by orbital ordering and thus drives the strong anisotropy of the magnetic coupling that has been observed by experiments and that the stripe-type AFM order in this compound may be caused by orbital ordering together with the observed large anisotropy.     

Guest-guest interactions in cointercalation compounds of FexCo1/4TiS2 and (FeyCo1−y)1/3TiS2

Lattice spacings, as magnetic susceptibilities, ESR, specific heats, and electrical properties have been measured on the cointercalation compounds of 1T-CdI₂ type host TiS₂, Fe_xCo TiS₂ (0 x ) and (Fe_yCo_1−y) TiS₂(0 y 1).

While the interlayer spacings are expanded rather smoothly with increasing the cointercalated Fe metals, the magnetic, thermal, and transport properties depend sensitively on a small amount of the added Fe metals, showing the presence of strong magnetic interactions, or guest-guest interactions between the cointercalated Fe and Co 3d metals in these systems.     

Electronic structures of ternary iron arsenides A Fe 2 As 2 ( A = Ba,Ca, or Sr)

We have studied the electronic and magnetic structures of the ternary iron arsenides AFe₂As₂ (A = Ba, Ca, or Sr) using the first-principles density functional theory. The ground states of these compounds are in a collinear antiferromagnetic order, resulting from the interplay between the nearest and the next-nearest neighbor superexchange antiferromagnetic interactions bridged by As 4p orbitals. The correction from the spin–orbit interaction to the electronic band structure is given. The pressure can reduce dramatically the magnetic moment and diminish the collinear antiferromagnetic order. Based on the calculations, we propose that the low energy dynamics of these materials can be described effectively by a t−J_H−J₁−J₂-type model [arXiv: 0806.3526v2, 2008].     

Magnetic behavior of 3d dopants in superconducting REBa2Cu3−xFexO7+δ (RE=Dy, Er)

Mössbauer studies on ⁵⁷Fe-doped superconducting REBa₂Cu₃O_7+δ (RE=Er, Dy) were made as a function of temperature for x=0.15 and 0.30. The magnetic behavior of the 3d dopants, which mainly occupy Cu(1) sites, undergoes antiferromagnetic ordering which is coexistent with superconductivity at low temperature. The dimensionality of the magnetic interaction changes from 2D to 3D when the rare earth changes from Er to Dy. the line-widths of the Mössbauer subspectra are characteristic of magnetic fluctuation behavior in the vicinity of a phase transition. Combining these results with those of Fe-doped Y-123 (pseudo 1D) and Gd (3D), the magnitude of the rare earth moments appears to be strongly correlated with the dimensionality of the magnetic interaction of Fe dopants in these compounds. However, the Mössbauer spectrum for ¹⁵⁵Gd in GdBa₂Cu_2.85Fe_0.15O_7+δ (T_{N(Fe) 14 K}) shows no magnetic order at 4.9 K.     

Multipartite Entanglement of a Tetrahedron Lattice

Three-dimensional Heisenberg model in the form of a tetrahedron lattice is investigated. The concurrence and multipartite entanglement are calculated through 2-concurrence C and 4-concurrence C4. The concurrence C and multipartite entanglement G4 depend on different coupling strengths Ji and are decreased when the temperature T is increased. For a symmetric tetrahedron lattice, the concurrence C is symmetric about J1 when J~ is negative while the multipartite entanglement G4 is symmetric about J1 when J2 〈 2. For a regular tetrahedron lattice, the concurrence G of ground state is 1/3 for ferromagnetic case while G = 0 for antiferromagnetic ca.se. However, there is no multipartitc entanglement since C4=0 in a regular tetrahedron lattice. The external magnetic field 13 can increase the maximum value of the concurrence GB and induce two or three peaks in Cn. There is a peak in the multipartite entanglement G4 B when G4B is varied as a function of the temperature T. This peak is mainly induced by the magnetic field B.     

Magnetic structures and related properties of some rare-earth intermetallic compounds, RCu2

The magnetic structures and some relevant bulk magnetic properties of R(Cu, Ni)₂ (R = Tb, Tb_zY_1−z, Dy, Ho, Er and Tm) are summarized. Basically, the magnetic structures are antiferromagnetically modulated with propagation vector a^*. For R = Tb, Dy, Ho the a-axis anisotropy dominates and the structures are longitudinally modulated. For R = Tm, Er (probably) the b-axis anisotropy dominates and this results in transversely modulated structures. For R = Tb, Dy the structures are collinear, For R = Ho, Er, Tm (probably) an incommensurate modulation coexists with the commensurate a^*-axis modulation at the lowest temperature.     

Oxygen diffusion and surface exchange in La1−xSrxFe0.8Cr0.2O3−δ (x=0.2, 0.4 and 0.6)

Oxygen tracer diffusion (D*) and surface exchange rate constant (k*) have been measured, using isotopic exchange and depth profiling by secondary ion mass spectrometry (SIMS), in La_1−xSr_xFe_0.8Cr_0.2O_3−δ (x=0.2, 0.4 and 0.6). Measurements were made as a function of temperature (700–1000 °C) and oxygen partial pressure (0.21–10⁻²¹ atm) in dry oxygen, water vapour and water vapour/hydrogen/nitrogen mixtures. At high oxygen activity, D* was found to increase with increasing temperature and Sr content. The activation energies for D* in air are 2.13 eV (x=0.2), 1.53 eV (x=0.4) and 1.21 eV (x=0.6). As the oxygen activity decreases, D* increases as expected qualitatively from the increase in oxygen vacancy concentration. Under strongly reducing conditions, the measured values of D* at 1000 °C range from 10⁻⁸ cm² s⁻¹ for x=0.2 to 10⁻⁷ cm² s⁻¹ for x=0.4 and 0.6. The activation energies determined at constant H₂O/H₂ ratio are 1.21 eV (x=0.2), 1.59 eV (x=0.4) and 0.82 eV (x=0.6).

The surface exchange rate constant of oxygen for the H₂O molecule is similar in magnitude to that for the O₂ molecule and both increase with increasing Sr concentration.     

First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb₂Se₃ crystal. When one and two N atoms are introduced into the Sb₂Se₃ lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb₂Se₃ from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants ε1(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb₂Se₃is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.     

自旋为1的双层平方晶格阻挫模型的相变

采用双时格林函数方法研究了自旋为1的双层平方晶格阻挫模型的相变行为.详细探讨了层间耦合相互作用J_c和单离子各向异性参数D对奈尔态(AF1)和共线态(AF2)之间相转换的影响.结果显示:只要参数J_c和D不同时为零,奈尔态和共线态在J₂=J₁/2(这里J₁和J₂分别描述的是系统自旋间最近邻和次近邻交换作用)时的相变温度相等,两个态共存.在低于相变点的温度范围内,AF1-AF2态之间可以发生相转换,其相变类型为一阶相变.当J₂≠J₁/2时,尽管AF1-AF2态有不同相变温度,但它们也可以共存.如果AF1(AF2)态的相变温度大,在低温,AF1(AF2)态更稳定;在高温,AF2(AF1)态更稳定;在中间温度范围内,AF1-AF2态之间也可以发生一阶相转换.     

XPS study of some selected selenium compounds

X-ray photoelectron spectroscopy (XPS) of the Se 3d peak for Se in Se, SeO₂, As₂Se₃, ZnSe, CdSe, CoSe, FeSe, CrSe, VSe₂ and TiSe were studied. It was found that, firstly, in the case of As₂Se₃, ZnSe, CdSe, CoSe and CrSe, as the change in electronegativity of the anion increases, the change in the binding energy value of the Se 3d peak also increases and, secondly, in all of the Se compounds studied, the Se-Se bond in pure Se is stronger than the Se-x bond, where X = As, Zn, Cd, Co, Fe, Cr, V and Ti.     

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells

The excitonic properties of a ZnSe/ZnS_xSe_1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS_0.18Se_0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.     

Bi4Se3薄膜的声子结构及电声子相互作用的第一性原理研究

基于密度泛函微扰理论,运用第一性原理研究两种终结面的Bi₄Se₃薄膜的声子结构和电-声子相互作用.结果表明两种终结面的Bi₄Se₃薄膜体系都是动力学稳定的. Bi₄Se₃薄膜中插入的Bi₂双原子层与Bi₂Se₃五原子层的声子投影态密度并不完全匹配,这会阻碍部分声子的输运,降低热导,从而有利于提高材料的热电性能.另外,两种终结面的Bi₄Se₃薄膜的电-声子耦合系数都不太大（约0.278）,有利于制备基于室温工作的电子学器件.     

新型硒化锑材料及其光伏器件研究进展

硒化锑(Sb₂Se₃)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(～1.15 eV), 吸光系数大(>10⁵ cm^-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb₂Se₃薄膜太阳能电池效率已达3.7%, 初步证明了Sb₂Se₃材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb₂Se₃太阳能电池的研究进展, 着重介绍了Sb₂Se₃的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望.     

Magnetic characteristics of R2(Fe, Co)14B systems (R = Y, Nd and Gd)

R₂(Fe, Co)₁₄B compounds (R = Y, Nd and Gd) were prepared in high purity. The magnetic behavior of R₂(Fe, Co)₁₄B compounds is reported over the temperature range 4 to 300 K. The effects of Fe substitution by Co on the saturation magnetization, Curie temperature and anisotropy are presented. The spin-reorientation temperature is lowered as Co replaces Fe. This also results in a reduced cone angle.

The R₂Fe_14−xCo_xB alloys crystallize in the tetragonal structure over the entire concentration range of 0 x 14. When Fe is substituted by Co, the Curie temperature increases significantly, the saturation magnetization increases to a maximum value around x = 2, and the anisotropy becomes planar for R = Y and Gd. The Nd₂(Fe, Co)₁₄B systems all exhibit uniaxial anisotropy at room temperature and Nd₂Co₁₄B is strongly uniaxial at 77 K. The Nd₂(Fe, Co)₁₄B systems are conical at 77 K.     

Invar properties in the rare earth-3d transition metal alloys

The RCo₂ and R₂Fe₁₇ compounds (R = rare earth) exhibit Invar-like thermal expansion anomalies below their ordering temperatures. These spontaneous volume magnetostrictions are discussed by considering their magnetic properties. In RCo₂ compounds there is no intrisinc Co-moment is induced by the exchange and applied fields. The volume expansion anomaly is associated with the onset of the 3d magnetic moment. IN R₂Fe₁₇ compounds there is an intrisinc Fe- moment. Magnetic structures give evidence for positive and negative exchange interactions between Fe atoms which are strongly distance dependent. The thermal expansion anomaly is a result of this distance of the magnetic interactions.     

Growth mechanism and characterisation of chemically grown Sb doped Bi2Se3 thin films

The synthesis of combinatorial Bi_2−xSb_xSe₃ thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi³⁺, Sb³⁺ and Se²⁻, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe₃ was made. The good results obtained for Bi_2−xSb_xSe₃ thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications.     

Field induced flux pinning in Nd1+xBa2−xCu3O7−δ single crystal

The flux pinning behavior of a Nd_1+xBa_2−xCu₃O_7−δ (Nd123) single crystal, which exhibited a peak effect, has been studied by monitoring the time decay of the magnetic moment. The apparent pinning energy (U₀^*) was deduced from flux creep data on the basis of the Anderson-Kim model. The magnetic field dependence of U₀^* showed maxima at peak fields which depended on the temperatures, in a similar manner to those of critical current densities. In addition, the temperature dependence of U₀^* showed several features. To explain the increase in U₀^* with the field as well as its temperature and field dependence, we made a numerical calculation by introducing an additional pinning energy which increased with increasing field. The results are in good agreement with the experimental data, especially at temperatures above 60 K, where the contribution of field induced pinning centers is believed to be dominant.