Magnetic properties of Co–Si alloy clusters

We have investigated the electronic structure and the magnetic properties of Co–Si alloy clusters using ab initio spin-polarized density functional calculations. The possible CoSi₂, CoSi, and Co₂Si phase clusters with oblique hexagon prism, icosahedron, and cuboctahedron structures are introduced. The CoSi phase cluster with icosahedron structure has the largest binding energy and amount of charge transfer. We found that HOMO-LUMO gap, magnetic moment, and spin polarization for the Co–Si alloy clusters with icosahedron structure increase with Co concentration. The Si atoms in the CoSi phase with icosahedron structure have negative magnetic moment.     

Experimental and theoretical studies of interactions between Si<Subscript>7</Subscript> clusters

The possibility of using magic Si₇ clusters to form a cluster material was studied experimentally and theoretically. In experiments Si₇ clusters were deposited on carbon surfaces, and the electronic structure and chemical properties of the deposited clusters were measured using X-ray photoelectron spectroscopy (XPS). A non bulk-like electronic structure of Si₇ was found in the Si 2p core level spectra. Si₇ is suggested to form a more stable structure than the non-magic Si₈ cluster and Si atoms upon deposition on carbon surfaces. Theoretically it was possible to study the interaction between the clusters without the effect of a surface. Density functional theory (DFT) calculations of potential curves of two free Si₇ clusters approaching each other in various orientations hint at the formation of cluster materials rather than the fusion of clusters forming bulk-like structures.     

Electronic properties of assembled islands of hydrogen-saturated silicon clusters on Si(111)-(7 x 7) surfaces studied by scanning tunneling spectroscopy

We present results of scanning tunneling spectroscopy (STS) measurements of hydrogen-saturated silicon clusters islands formed on Si(111)-( 7×7) surfaces. Nanometer-size islands of Si₆H₁₂ with a height of 0.2-4 nm were assembled with a scanning tunneling microscope (STM) using a tip-to-sample voltage larger than 3 V. STS spectra of Si₆H₁₂ cluster islands show characteristic peaks originating in resonance tunneling through discrete states of the clusters. The peak positions change little with island height, while the peak width shows a tendency of narrowing for the tall islands. The peak narrowing is interpreted as increase of lifetime of electron trapped at the cluster states. The lifetime was as short as 10^-13 s resulting from interaction with the dangling bonds of surface atoms, which prevents charge accumulation at the cluster islands. Received 30 November 2000     

Density-functional study of Si<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>C<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> (<Emphasis Type="Italic">n</Emphasis> = 10–15) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic properties of Si _n C _n (n = 10–15) clusters. We find that the Si _n C _n clusters prefer cagelike structures. An extensive isomer search shows that the lowest-energy arrangements are those in which the silicon atoms and the carbon atoms form two distinct subunits. It is found that the carbon atoms favor to form fullerene-like structure due to the sp ²-like bond. The silicon atoms are trying to cope with an unfavorable sp ² environment, but distorted tetrahedra still show up somewhere of the cagelike structures. On the basis of the lowest-energy geometries obtained, the binding energy, HOMO–LUMO gap, Mulliken charge, ionization potential and electron affinity of the clusters have been computed and analyzed. An electronic charge transfer from the Si-populated to the C-populated regions is observed.     

Formation of binary clusters by molecular ion irradiation

In the present study, we have observed silicon–carbon cluster ions (Si_nC_m⁺) emitted from a Si(1 0 0) surface under irradiation of reactive molecular ions, such as C₆F₅⁺, at 4 keV, 1 μA/cm². The cluster Si_n up to n=8 and “binary” cluster Si_nC up to n=6 are clearly detected for the C₆F₅⁺ irradiation. Stoichiometric clusters (Si_nC_m n=m) except SiC⁺ and other binary clusters which contain more than two carbon atoms (m≥2) were scarcely observed. The observed clusters show a yield alternation between odd and even n. The intensities of Si₄, Si₆ and Si₅C clusters are relatively higher than those of the neighboring clusters. In the case of Si₅C, it is considered that doped carbon atom acts as silicon atom. These results imply that the recombination through the nascent cluster emission and subsequent decomposition takes place during the cluster formation.     

Luminescence and structure of nanosized inclusions formed in SiO2 layers under double implantation of silicon and carbon ions

Luminescent and structural characteristics of SiO₂ layers exposed to double implantation by Si⁺ and C⁺ ions in order to synthesize nanosized silicon carbide inclusions have been investigated by the photoluminescence, electron spin resonance, transmission electron microscopy, and electron spectroscopy methods. It is shown that the irradiation of SiO₂ layers containing preliminary synthesized silicon nanocrystals by carbon ions is accompanied by quenching the nanocrystal-related photoluminescence at 700–750 nm and by the enhancement of light emission from oxygen-deficient centers in oxide in the range of 350–700 nm. Subsequent annealing at 1000 or 1100°C results in the healing of defects and, correspondingly, in the weakening of the related photoluminescence peaks and also recovers in part the photoluminescence of silicon nanocrystals if the carbon dose is less than the silicon dose and results in the intensive white luminescence if the carbon and silicon doses are equal. This luminescence is characterized by three bands at ～400, ～500, and ～625 nm, which are related to the SiC, C, and Si phase inclusions, respectively. The presence of these phases has been confirmed by electron spectroscopy, the carbon precipitates have the sp ³ bond hybridization. The nanosized amorphous inclusions in the Si⁺ + C⁺ implanted and annealed SiO₂ layer have been revealed by high-resolution transmission electron microscopy.     

Novel metal-encapsulated caged clusters of silicon and germanium

We report the recent findings of metal (M) encapsulated clusters of silicon from computer experiments based on ab initio total energy calculations and a cage shrinkage and atom removal approach. Our results show that using a guest atom, it is possible to wrap silicon in fullerenelike (f) structures, as sp² bonding is not favorable to produce empty cages unlike for carbon. Transition M atoms have a strong bonding with the silicon cage that are responsible for the compact structures. The size and structure of the cage change from 14 to 20 Si atoms depending upon the size and valence of the M atom. Fewer Si atoms lead to relatively open structures. We find cubic, f, Frank-Kasper (FK) polyheral type, decahedral, icosahedral and hexagonal structures for M@Si_n with n = 12-16 and several different M atoms. The magic behavior of 15 and 16 atom Si cages is in agreement with experiments. The FK polyhedral cluster, M@Si₁₆ has an exceptionally large density functional gap of about 2.35 eV calculated within the generalized gradient approximation. It is likely to give rise to visible luminescence in these clusters. The cluster-cluster interaction is weak that makes such clusters attractive for cluster assembled materials. Further studies to stabilize Si₂₀ cage with M = Zr, Ba, Sr, and Pb show that in all cases there is a distortion of the f cage. Similar studies on M encapsulated germanium clusters show FK polyhedral and decahedral isomers to be more favorable. Also perfect icosahedral M@Ge₁₂ and M@Sn₁₂ clusters have been obtained with large gaps by doping with divalent M atoms. Recent results of the H interaction with these clusters, hydrogenated silicon fullerenes as well as assemblies of clusters such as nanowires and nanotubes are briefly presented.     

Quantum-chemical modeling of structural,electronic, and spin characteristics of NV centers in nanostructured diamond: Surface effect

The effect of the surface of diamond on atomic, electronic, and spin properties of diamond nanocrystals containing single nitrogen-vacancy defects ([NV]⁻ centers) is studied. The surface was modeled with clusters C₃₃H₃₀[NV]⁻, C₆₆H₇₂[NV]⁻, which were constructed based on bulk clusters C₃₃H₃₆[NV]⁻ and C₆₉H₈₄[NV]⁻, respectively. In all cases, clusters in the triplet state S = 1 are considered with the cluster charge being −1. The geometric structure of clusters is optimized using the principle of minimization of the total energy of the system; then, the electronic and spin characteristics of clusters are calculated by the density functional theory. The isotropic and anisotropic hyperfine interaction constants of the electron spin of the NV center with the nuclear spin of the nitrogen atom and ¹³C atoms located at different sites in the cluster are calculated. It is found that, in contrast to bulk clusters with [NV]-centers in which the spin density is mainly localized at the three carbon atoms that are the nearest neighbors of the vacancy of the center, upon arrangement of the NV center in the immediate proximity to the surface, the spin density is redistributed such that it is mainly localized at the three carbon atoms that are the nearest neighbors of the nitrogen atom of the center and at C atoms that form the first atomic layer of the (111) surface of the nanocrystal.     

Improving the tribological performances of graphite-like carbon films on Si3N4 and SiC by using Si interlayers

Si interlayers were used to obtain the excellent tribological performances of graphite-like carbon (GLC) film on silicon nitride (Si₃N₄) and silicon carbide (SiC). The microstructure and mechanical characteristics of the as-prepared GLC films with Si interlayers were investigated by scanning electron microscopy, Raman spectroscopy, nanoindention and scratch test. The tribological behaviors of GLC-coated and uncoated Si₃N₄ and SiC were comparatively studied by a ball-on-disc tribo-meter in both dry and water environments. Results showed that the Si interlayers were dense and bonded well with both the substrates and GLC layers. The as-prepared GLC films exhibited excellent tribological performances in both dry and water environments. More importantly, the stably mild wear without any delamination was obtained in water by using Si interlayer. The mechanisms of friction reduction and anti-wear performances of GLC films on the two ceramics with Si interlayers under different environmental conditions were discussed, as well as the corresponding models were deduced.     

Interaction of magic gold cluster with Si$_\mathsf{60}$ cage

First-principles studies are performed on Au₁₂W@Si₆₀ by using projector-augmented wave (PAW) method and generalized gradient approximation for the exchange-correlation energy. The geometry, electronic structure, orbital hybridization, and charge transfer are discussed. It is found that the magic Au₁₂W cluster interacts strongly with Si, thus stabilizes Si₆₀ cage structure. Meanwhile the metal cluster is dissociated when encapsulated in the Si₆₀ cage, and charges are transferred from the Si cage to the metal atoms.Received: 30 December 2003, Published online: 17 February 2004PACS: 61.48. + c Fullerenes and fullerene-related materials - 36.40.Cg Electronic and magnetic properties of clusters - 61.46. + w Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals - 71.20.Tx Fullerenes and related materials; intercalation compounds     

Molecular dynamics study of hydrogenated silicon clusters at high temperatures

This paper reports on a study of the stability of silicon clusters of intermediate size at a high temperature. The temperature dependence of the physicochemical properties of 60- and 73-atom silicon nanoparticles are investigated using the molecular dynamics method. The 73-atom particles have a crystal structure, a random atomic packing, and a packing formed by inserting a 13-atom icosahedron into a 60-atom fullerene. They are surrounded by a ‘coat’ from 60 atoms of hydrogen. The nanoassembled particle at the presence of a hydrogen ‘coat’ has the most stable number (close to four) of Si–Si bonds per atom. The structure and kinetic properties of a hollow single-layer fullerene-structured Si₆₀ cluster are considered in the temperature range 10 K ≤ T ≤ 1760 K. Five series of calculations are conducted, with a simulation of several media inside and outside the Si₆₀ cluster, specifically, the vacuum and interior spaces filled with 30 and 60 hydrogen atoms with and without the exterior hydrogen environment of 60 atoms. Fullerene surrounded by a hydrogen ‘coat’ and containing 60 hydrogen atoms in the interior space has a higher stability. Such clusters have smaller self-diffusion coefficients at high temperatures. The fullerene stabilized with hydrogen is stable to the formation of linear atomic chains up to the temperatures 270–280 K.     

Cu吸附(SiO3)n(n=1—8)团簇几何结构和电子性质的密度泛函研究

运用密度泛函理论下的广义梯度近似和交换关联函数对Cu吸附(SiO₂)n(n=1—8)团簇的几何结构、电荷分布、稳定性和电子性质进行了较详细的研究,结果表明: Cu原子易于和带有悬挂键的Si原子作用并形成"铜岛膜"; Cu吸附(SiO₂)_n团簇后Si原子失去电子能力减弱,O原子得到电子能力增强;Cu(SiO₂)n(n 关键词： 密度泛函理论 2)_n (n=1—8)团簇')" href="#">Cu(SiO₂)_n (n=1—8)团簇 近红外吸收     

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm^–1 in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH₄) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl₃) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl₃ on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.     

Two-dimensional clusters in SiGe/Si heterostructures and their effect on field effect transistor transport characteristics

Heterostructures of Si_0.80Ge_0.20/Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminescence line broadening indicated the presence of Ge-rich clusters (20–30 nm) in layers grown at a substrate temperature of 600 ^○C using a excimer laser at 248 nm wavelength.The 2D clusters were modeled, assuming a spherical shape and a potential of the form δΔU where δ is the composition variation and ΔU is the disorder potential. A scattering matrix element was derived which included intraband scattering. Transport effects were calculated using Monte Carlo techniques. Of interest was lateral transport in a field effect transistor configuration. Therefore, velocity versus field curves were calculated where electron motion is confined to the 2D-like Si/SiGe interface layers. Using concepts of charge control, current versus voltage relationships were derived. The derived models showed that for the case of a 250 μm conducting channel lateral length with 2D clusters evenly placed at every 10 nm, the transconductance increase is 25% and is a function of both cluster size and separation.In order to measure the effect of clustering, high electron mobility transistors were fabricated with two conducting 2D channels consisting of Si/SiGe/Si grown on high resistivity (100) silicon. Using 0.5 μm gates, a transconductance of 125 mS/mm was obtained in transistors without alloy clustering which decreased to less than 80 mS/mm when alloy clustering was present. The present investigation has related the presence of 2D nano-clusters to device performance and has also shown agreement between the experimental results and theoretical calculations.     

Molecular dynamics study of particle emission by reactive cluster ion impact

Molecular dynamics (MD) simulations of sputtering process with fluorine cluster impact onto silicon targets were performed. By iterating collisional simulations on a same target, accumulation of incident atoms and evolution of surface morphology were examined as well as emission process of precursors. When (F₂)₃₀₀ clusters were sequentially irradiated on Si(1 0 0) target at 6 keV of total incident energy, column-like surface structure covered with F atoms was formed. As the number of incident clusters increased, sputtering yield of Si atoms also increased because the target surface was well fluoridised to provide SiF_x precursors. Size distribution of emitted particles showed that SiF₂ was the major sputtered particle, but various types of silicon-fluoride compounds such like Si₂F_x, Si₃F_x and very large molecules consists of 100 atoms were also observed. This size distribution and kinetic energy distribution of desorbed materials were studied, which showed that the sputtering mechanism with reactive cluster ions is similar to that under thermal equilibrium condition at high-temperature.     

The magnetic and hyperfine properties of iron in silicon carbide

The magnetic and hyperfine properties of iron impurities in 3C- and 6H- silicon-carbide are calculated using the abinitio method of full-potential linear-augmented-plane-waves. The iron atoms are introduced at substitutional carbon, Fe _C , and silicon, Fe _Si , sites as well as at the tetrahedral interstitial sites with four nearest neighbours carbon atoms, Fe _I (C), and four nearest neighbours silicon atoms, Fe _I (Si). The effect of introducing vacancies at the neighbours of these sites is also studied. Fe atoms with complete neighbors substituted at Si or C sites are found to be nonmagnetic, while Fe atoms at interstitial sites are magnetic. Introduction of a vacancy at a neighboring site reverse the picture.     

Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si<Subscript><Emphasis Type="Italic">N</Emphasis></Subscript> atomic and cluster ions (<Emphasis Type="Italic">N</Emphasis> = 1, 5, and 60) using classical molecular dynamics

The features of the cascade of atomic collisions, the spatial distribution of dopes, and primary radiation damage in a near-surface region of cubic silicon carbide under bombardment by Si _N ions and clusters (N = 1, 5, and 60) in the case of the same energy per one atom of the particle-projectile (200 and 1000 eV/atom) are studied in this paper. The study is carried out using classical molecular dynamics. As a result, several features of the low-energy implantation of polyatomic clusters in SiC(111) are revealed, namely, a relatively weak effect of the size of the implanted cluster on the distribution of ranges of incorporated atoms, a low degree of nonlinear effects at the cascade and postcascade stages, and formation of amorphous regions in the target during cluster implantation.     

Structural studies of thin silicon layers repeatedly implanted by carbon ions

The composition and structure of homogeneous SiC_1.4 and SiC_0.12 layers produced by multiple implantation of 40-, 20-, 10-, 5-, and 3-keV carbon ions into silicon were studied by electron microscopy, x-ray diffraction, Auger spectroscopy, and IR spectroscopy. The temperature dependences of the IR transmittance peak parameters obtained in the range 200–1400°C indicate that the increase in the number of carbon atoms that are bound to silicon atoms and are involved in absorption is caused by the formation and breaking of hexagonal, near-tetrahedral, and multiple Si-C bonds and by the decomposition of optically active strong carbon clusters. The high crystallization temperature of SiC (1200°C) in the SiC_1.4 layer is explained by the presence of stable multiple Si-C bonds and strong carbon clusters. Strong carbon clusters are shown to exist in the implanted SiC_0.12 layer, and their decomposition is found to affect the formation of tetrahedral bonds in the temperature range 1200–1400°C.     

Mn掺杂SiC磁性薄膜的结构表征

利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)和X射线吸收近边结构谱(XANES)等技术研究了在950 ℃条件下Si(111)衬底上共蒸发分子束外延方法制备的Mn掺杂SiC磁性薄膜的结构特征.RHEED结果表明,生长的Mn掺杂SiC薄膜为立方结构.XRD和XANES结果表明,在Mn掺杂量为0.5％和18%的样品中,Mn原子均是与SiC半导体介质中的Si原子反应生成镶嵌在SiC基体中的Mn₄Si₇化合物颗粒,并未观察到在SiC晶格中有替代式或间隙式的M     

The electron distribution in superconducting alloys: I. Analysis of V3Si at room temperature

Accurate X-ray diffraction data are used to obtain the charge distribution in the superconducting alloy V₃Si. The main interaction is found to be strong covalent bonding between adjacent vanadium atoms within the infinite chains. Integration of the charge around the Si and V atoms leads to a best estimate of 1.8–2.4 electrons for the charge transfer from the silicon to the vanadium atoms.