Dynamical control of electron states in double quantum dot

Controllable electron dynamics in a double quantum dot has been investigated theoretically in the presence of strong sinusoidal electric field and monotonically varied bias voltage, applied to the structure. It is shown that the possibility to create controllable electron states strongly depends on the relation between Rabi frequency and typical reciprocal time of bias change. As follows from theoretical analysis, when time of bias change is the biggest temporal parameter of the problem, electron density can be fully relocated from one quantum dot to another under the action of both resonant sinusoidal field and slowly varied voltage. When the period of Rabi oscillations is much greater than the time of bias change, electron tunneling between two neighboring quantum dots becomes suppressed. In this case electron density stays in the quantum dot that was initially occupied.     

Robust quantum dot exciton generation via adiabatic passage with frequency-swept optical pulses

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

Core/shell/shell spherical quantum dot with Kratzer confining potential: Impurity states and electrostatic multipoles

An exactly solvable problem of impurity states is considered in core/shell/shell spherical quantum dot. Kratzer molecular potential is taken for confinement potential. The analytical expressions are obtained for the energy spectrum and wave functions of the impurity electron. The dependencies of the total energy and the binding energy of the impurity on the parameters of the confining potential are investigated. The possibility of the impurity electron leakage is shown in the external environment, due to the specific form of the Kratzer potential. The character of the electrostatic field created by the impurity and the electron is observed on the basis of obtained results. The multipole corrections caused by the dipole and quadrupole moments of the electron are calculated. It is shown that the dipole moment is absent, and the problem reduces to the calculation of only z component for the average values of the diagonal elements of the quadrupole moment tensor. The dependencies of the average values of the quadrupole moment on the Kratzer potential parameters are studied.     

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Density of states is studied by a ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs heterostructure prepared by metal–organic vapor phase epitaxy. An example of integral quantum dot density of states which is proportional to superposition of a derivative of ballistic current–voltage characteristics measured at every pixel (1.05 nm×1.05 nm) of quantum dot is presented. For the two lowest observed energy levels of quantum dot (the maxima in density of states) the density of states is mapped and correlated with the shape of quantum dot. It was found that prepared quantum dots have a few peaks on their flatter top and a split of the lowest energy level can be observed. This effect can be explained by inhomogeneous (nonuniform) stress distribution in the examined quantum dot.     

Renormalization of the energy spectrum of quantum dots under vibrational resonance conditions: Persistent hole burning spectroscopy

A theory of photophysical burning of spectral holes in an inhomogeneously broadened light absorption profile of spherical quantum dots under vibrational resonance conditions is developed. The energy spectrum and the eigenfunctions of polaron-like excitations that arise in a quantum dot when the energy of an optical phonon is close to the energy gap between some pair of levels of the quantum dot electron subsystem are found by the method of canonical transformations. Expressions describing the difference light absorption spectra of quantum dots in the regimes of strong and weak confinement are obtained within a simple kinetic model.     

量子点双链中电子自旋极化输运性质

利用非平衡格林函数方法, 研究了与单个量子点耦合的量子点双链中电子自旋极化输运性质. 由于系统中Rashba自旋轨道耦合产生的自旋相关的相位, 电子通过上下两种路径时, 自旋不同的电子干涉情况不同, 从而导致了电极中的自旋极化流. 左右两电极间的偏压使单个量子点中的自旋积聚在很大能量区域内能够保持较大的值. 由于系统结构的左右不对称, 正负偏压下自旋积聚情况完全不同. 这些计算结果将有助于实验上设计新型的自旋电子学器件.     

Variation of co-tunneling and Kondo effects by control of the strength of coupling between a vertical dot and a two-dimensional electron gas

We have fabricated a vertical quantum dot with lateral coupling, modulated by a split gate voltage, to a two-dimensional electron. We thereby control not only electron configurations but also the strength of coupling between the dot and the lateral lead, by applying gate voltages. We have measured the conductance enhancement when the applied bias exceeds the single-electron excitation energy, in the Coulomb blockade regime. This conductance enhancement disappears as the split gate voltage decreases (reducing the coupling). This indicates that this enhancement is caused by inelastic co-tunneling. Furthermore, we observed a conductance enhancement at zero source–drain bias with stronger coupling. An anomaly is observed that we attribute to Kondo resonance between the dot and the leads.     

Bias-dependent bandwidth of the conductance in the presence of electron–phonon interaction

We study the electronic transport in the presence of electron–phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron’s spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.     

Electroluminescence spectra of an STM-tip-induced quantum dot

We analyze the electroluminescence spectrum of an STM-tip-induced quantum dot in a GaAs surface layer. A flexible model has been developed, that combines analytical and numerical methods and describes the key features of many-particle states in the STM-tip-induced quantum dot. The dot is characterized by its depth and lateral width, which are experimentally controlled by the bias and the tunneling current. We find, in agreement with experiment, that increasing voltage on the STM-tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunneling current through the STM-tip reveal a blue shift.     

Recovering pure states in two-state quantum systems

In this work, we study the loss and recovery of pure states (i.e., coherence) in two-state molecules and quantum dots. The molecules of two electronic states and a one-dimensional nuclear vibration are modeled by a quantum–classical dynamical model. According to the simulations, pure states of a two-state molecule can be restored by the excitation of the nuclear vibration by a well-defined electromagnetic field. In the case of a quantum dot, pure states can be regained through the modulation of the energy levels through the application of a proper bias voltage on the dot.     

Transport in split-gate silicon quantum dots

We report on the transport properties of novel Si quantum dot structures with controllable electron number through both top and side gates. Quantum dots were fabricated by a split-gate technique within a standard MOSFET process. Four-terminal dc electrical measurements were performed at 4.2 K in a liquid helium cryostat. Strong oscillations in the conductance through the dot are observed as a function of both the top gate bias and of the plunger bias. An overall monotonic and quasi-periodic movement of the peak conductance is observed which is believed to be associated with the bare level structure of the electronic states in the dot coupled with the Coulomb charging energy. Crossing behavior is observed as well, suggestive of either many-body effects or symmetry breaking of the dot states by the applied bias.     

Dipole coupling of a double quantum dot to a microwave resonator

We demonstrate the realization of a hybrid solid-state quantum device, in which a semiconductor double quantum dot is dipole coupled to the microwave field of a superconducting coplanar waveguide resonator. The double dot charge stability diagram extracted from measurements of the amplitude and phase of a microwave tone transmitted through the resonator is in good agreement with that obtained from transport measurements. Both the observed frequency shift and linewidth broadening of the resonator are explained considering the double dot as a charge qubit coupled with a strength of several tens of MHz to the resonator.     

Comparing the reliability of networks by spectral analysis

Topological effects on the confinement of a moving neutral particle with an induced electric dipole moment confined to a quantum ring and a two-dimensional quantum dot (described by a hard-wall confining potential) are investigated. It is shown in this work that the spectrum of energy depends on the geometric phase obtained by Wei et al. [H. Wei, R. Han, X. Wei, Phys. Rev. Lett. 75, 2071 (1995)] and persistent currents arise from this dependence in both the quantum ring and the quantum dot. Further, the behaviour of the analogue of the Landau system for a moving electric dipole confined to a two-dimensional quantum dot is discussed, and it is shown that persistent currents are absent in this case.     

Transport properties of quantum dots

Linear and nonlinear transport through a quantum dot that is weakly coupled to ideal quantum leads is investigated in the parameter regime where charging and geometrical quantization effects coexist. The exact eigenstates and spins of a finite number of correlated electrons confined within the dot are combined with a rate equation. The current is calculated in the regime of sequential tunneling. The analytic solution for an Anderson impurity is given. The phenomenological charging model is compared with the quantum mechanical model for interacting electrons. The current-voltage characteristics show Coulomb blockade. The excited states lead to additional fine-structure in the current voltage characteristics. Asymmetry in the coupling between the quantum dot and the leads causes asymmetry in the conductance peaks which is reversed with the bias voltage. The spin selection rules can cause a ‘spin blockade’ which decreases the current when certain excited states become involved in the transport. In two-dimensional dots, peaks in the linear conductance can be suppressed at low temperatures, when the total spins of the corresponding ground states differ by more than 1/2. In a magnetic field, an electron number parity effect due to the different spins of the many-electron ground states is predicted in addition to the vanishing of the spin blockade effect. All of the predicted features are consistent with recent experiments.     

Electromagnetic-field-induced resonant structures for an open rectangular quantum dot

We study theoretically the electron transport properties for an open rectangular quantum dot under an external electromagnetic field illumination in the ballistic regime. Using the effective mass free-electron approximation, the scattering matrix for the system has been formulated by the time-dependent mode-match method. Some interesting properties of the electron transmission have been demonstrated through serval numerical examples. The dependence of electron transmission on the electron incident energy is found to exhibit Fano dip structures due to the field-induced intersubband scatterings into quasibound states in the dot. Moreover, with an appropriate incident energy the electron transmission as a function of the field frequency and/or amplitude shows a rich structure. Our results suggest that the electron transport properties of an open rectangular quantum dot are affected by the interplay effects between the nonadiabatic dot-lead connection and the applied field.     

含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器

本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.     

Nonequilibrium conductance of a nanodevice for small bias voltage

Using nonequilibrium renormalized perturbation theory, we calculate the retarded and lesser self-energies, the spectral density ρ(ω) near the Fermi energy, and the conductance G through a quantum dot as a function of a small bias voltage V, in the general case of electron-hole asymmetry and intermediate valence. The linear terms in ω and V are given exactly in terms of thermodynamic quantities. When the energies necessary to add the first electron (Ed) and the second one (Ed + U) to the quantum dot are not symmetrically placed around the Fermi level, G has a term linear in V if, in addition, either the voltage drop or the coupling to the leads is not symmetric. The effects of temperature are discussed. The results simplify for a symmetric voltage drop, a situation usual in experiment.     

Electronic properties of a quantum dot formed by the potentials associated with the surface acoustic wave and constrictions

The electronic structure of dynamic quantum dots formed by surface acoustic waves potential and the confinement potential produced by gate voltage has been investigated within the spin-density-functional theory. We found the addition energy of this kind quantum dot in general decreases as the electron number increases, so the basic feature of the quantized acoustoelectric current with multi-plateaus can be reproduced. The addition energy needed for a second electron entering into the dynamic quantum dot is found to be about 2.21 meV, which is in good agreement with experimental estimations. Moreover, the formation of the Wigner molecule-like states is observed when the number of electrons in the dot exceeds three. By the calculated addition energy and the evolution of the electron density in the presence of a magnetic field, we also explained the influence of the magnetic field on the acoustoelectric current appeared in the experiments.     

介观电子谐振腔量子能谱与能量的量子涨落

针对介观电子谐振腔模型,在由电荷算符本征态构成的新Fock空间中,假设系统具有变换的对称性,通过求解Hamilton算符的本征值方程,给出系统的量子能谱关系.在电荷算符的Fock态下计算能量的量子涨落,分析和研究电子谐振腔的量子能谱性质.结果表明:类似于电荷的量子性,能谱明显地呈现出离散性,其大小决定于谐振腔的电参量、形状因子及栅极所加偏压等因素;而能量的量子涨落却仅与电荷量子、Planck常数以及系统自感有关.