二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

二维材料及其异质结的声子物理研究

声子是固体最重要的元激发之一,是理解材料摩尔热容、德拜温度以及热膨胀系数等热力学性质的基础,同时电声子相互作用也决定了固体的电导和超导等特性。拉曼光谱是表征固体声子物理的重要实验手段,不仅能表征材料的结构和质量,还能提供材料声子性质、电子能带结构、电声耦合等信息。文章将拉曼光谱应用于二维材料及其范德瓦尔斯异质结的声子物理研究。先简单介绍二维材料的层间振动声子模式和层内振动声子模式,其中层间振动声子模式的频率可用线性链模型来计算,而强度则可用层间键极化率模型来解释;同类层内振动声子模式的Davydov劈裂峰之间的频率差异可用范德瓦尔斯模型拟合。随后,将这些模型推广到二维范德瓦尔斯异质结中,以转角多层石墨烯、MoS_2/石墨烯和hBN/WS_2为例介绍了范德瓦尔斯异质结的声子谱,阐述如何应用线性链模型和经典键极化率模型计算层间振动模的频率和强度,并由此给出二维范德瓦尔斯异质结的界面耦合强度和各层间呼吸模的电声耦合强度等重要参数。     

二维材料的转移方法

二维材料及其异质结在电子学、光电子学等领域具有潜在应用,是延续摩尔定律的候选电子材料.二维材料的转移对于物性测量与器件构筑至关重要.本文综述了一些具有代表性的转移方法,详细介绍了各个方法的操作步骤,并基于转移后样品表面清洁程度、转移所需时间以及操作难易等方面对各个转移方法进行了对比归纳.经典干、湿法转移技术是进行物理堆叠制备原子级平整且界面清晰范德瓦耳斯异质结的常用手段,结合惰性气体保护或在真空条件下操作还可以避免转移过程中二维材料破损和界面吸附.高效、无损大面积转移方法为二维材料异质结构建和材料本征物理化学性质测量提供了强有力的技术保障.转移技术的优化将进一步扩展二维材料在高温超导、拓扑绝缘体、低能耗器件、自旋谷极化、转角电子学和忆阻器等领域的研究.     

磷烯基二维范德瓦尔斯异质结的理论表征

本文基于单层黑磷和蓝磷,理论设计出二维范德瓦尔斯异质结、能带结构、态密度、Bader电荷布局、电荷密度差分图及光吸收谱等,计算结果表明它是典型的第二型异质结,有利于光生载流子分离,且可见光捕获能力显著增强.内禀的界面极化电场能有效阻止光生电子-空穴的复合.表明磷烯基二维范德瓦尔斯异质结是一类性能优异的光解水催化剂.     

磷烯基二维范德瓦尔斯异质结的理论表征（英文）

本文基于单层黑磷和蓝磷,理论设计出二维范德瓦尔斯异质结、能带结构、态密度、Bader电荷布局、电荷密度差分图及光吸收谱等,计算结果表明它是典型的第二型异质结,有利于光生载流子分离,且可见光捕获能力显著增强.内禀的界面极化电场能有效阻止光生电子-空穴的复合.表明磷烯基二维范德瓦尔斯异质结是一类性能优异的光解水催化剂.     

二维平面和范德瓦耳斯异质结的可控制备与光电应用

自石墨烯被发现以来,二维材料因其优异的特性获得了持续且深入的探索与发展,以石墨烯、六方氮化硼、过渡金属硫化物、黑磷等为代表的二维材料相关研究层出不穷.随着二维新材料制备与应用探索的不断发展,单一材料性能的不足逐渐凸显,研究者们开始考虑采用平面拼接和层间堆垛所产生的协同效应来弥补单一材料的不足,甚至获得一些新的性能.利用二维材料晶格结构的匹配构建异质结,实现特定的功能化,或利用范德瓦耳斯力进行堆垛,将不同二维材料排列组合,从而在体系里引入新的自由度,为二维材料的性质研究和实际应用打开了新的窗口.本文从原子制造角度,介绍了二维平面和范德瓦耳斯异质结材料的可控制备和光电应用.首先简要介绍了应用于异质结制备的常见二维材料的分类及异质结的相关概念,然后从原理上分类列举了常用的表征方法,随后介绍了平面和垂直异质结的制备方法,并对其光电性质及器件应用做了简要介绍.最后,对领域内存在的问题进行了讨论,对未来发展方向做出了展望.     

二维材料外延生长的原子尺度机理:特性与共性

自首次从石墨中剥离出石墨烯以来,只有原子级厚度的层状(或二维)材料因其丰富奇特的物性占据着当今凝聚态物理和材料科学的中心舞台。不断扩大的二维材料家族,包括石墨烯、硅烯、磷烯、硼烯、六方氮化硼、过渡金属二硫族化合物、甚至强拓扑绝缘体等,不仅每个成员有其鲜明的个性,如独特的物性与制备方法,而且整个大家族又有其共性,如单层材料与衬底之间、层与层之间几乎都是依赖弱的范德瓦尔斯力耦合在一起。对任一个二维家族成员的深层理解,都可能对真正走进这一大家族有普适性价值。文章首先介绍范德瓦尔斯层状材料非平衡外延生长中常常遇到的主要原子过程和相应的形貌演化;进一步讨论范德瓦尔斯相互作用在二维材料横向或垂直堆叠的异质结中的重要性。在原子尺度的生长机理之外,也围绕二维材料的物性优化与功能化简要介绍一些最新进展,具体例子覆盖光学、电学、自旋电子学、催化等领域。     

二维材料及其范德瓦尔斯异质结的高压响应研究进展

高压技术是一种高效、连续、可逆的调控材料结构、电学、光学等物理特性的手段,因此利用压强工程在材料中实现超导态、制备超硬材料等成为高压领域的研究热点。不同于传统的三维体相材料,二维材料及其异质结中独特的层间耦合作用使其具有许多不同于传统材料的物理特性,且这些物理特性极易受到外场影响和调控,使得高压物理成功地拓展到低维材料领域。本文以石墨烯、黑磷、六方氮化硼和过渡金属二硫族化合物等几种典型的二维材料及其异质结为例,概述了二维材料及异质结在高压调控下的结构、电学、声子动力学、光学等方面的响应,并简要讨论这些高压调控下的二维材料在未来电子、光电器件等领域应用的潜力。     

基于双极性二维晶体的新型p-n结

二维晶体的特殊结构和新奇物理性能为构建新型纳米结构和器件,实现半导体领域的突破性进展提供了可能.本文首先介绍了双极性二维晶体的基本物理性能和相关范德瓦耳斯异质结的制备方法.在此基础上,主要综述了双极性二维晶体在新型电场调制二维晶体p-n结与异质p-n结以及非易失性可存储二维晶体p-n结等方面的应用、相关结构设计、电子和光电子等物理性能.然后进一步介绍了该类新型p-n结在逻辑整流电路、场效应光电子晶体管、多模式非易失性存储器、整流存储器、光电子存储器、光伏器件等方面的潜在应用.最后总结展望了该种新型p-n结在相关领域的可能发展方向.     

范德瓦尔斯磁性材料CrOCl变磁性相变的磁力显微镜研究

近年来,二维范德瓦尔斯磁性材料因为在自旋电子学的应用前景而吸引了广泛的关注.CrOCl是一种范德瓦尔斯磁性材料,理论预言其单层具有高达160 K的居里温度,因此吸引了广泛的关注。为了更好的理解这一材料的磁性,我们利用磁力显微镜研究了CrOCl变磁性相变中磁畴结构随磁场的变化。实验发现,在2K下CrOCl样品表面出现随磁场变化的方格条纹,给出了变磁性相比中反铁磁相和铁磁相竞争的图样,并通过二维快速傅里叶变换证实了CrOCl磁性的各向异性。我们的结果为后续研究CrOCl薄层的磁性提供了参考依据。     

Magnetic two-dimensional van der Waals materials forspintronic devices

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.     

Resonance Tunneling Phenomena in Two-Dimensional Multilayer van der Waals Crystalline Systems

Works, mostly experimental, concerning the most interesting features of application of the resonant tunneling spectroscopy to a new type of heterosystems, van der Waals heterostructures, have been briefly reviewed. These heterostructures appeared after the recent discovery of two-dimensional crystals, which are a new class of materials beginning with graphene. The role of the angular matching of crystal lattices of conducting graphene electrodes of van der Waals systems in carrier tunneling between them has been analyzed together with the closely related problems of satisfaction of conservation laws in tunneling transitions. Manifestations of multiparticle correlation interactions between carriers in van der Waals systems such as Wigner crystallization of electrons in a two-dimensional electron gas in a magnetic field and Bose condensation of excitons in parallel two-dimensional electron gases have been briefly discussed.     

Magnetic van der Waals materials: Synthesis,structure, magnetism,and their potential applications

As the family of magnetic materials is rapidly growing, two-dimensional (2D) van der Waals (vdW) magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications. This paper reviews the recent progress on emergent vdW magnetic compounds and their potential applications in devices. First, we summarize the current vdW magnetic materials and their synthetic methods. Then, we focus on their structure and the modulation of magnetic properties by analyzing the representative vdW magnetic materials with different magnetic structures. In addition, we pay attention to the heterostructures of vdW magnetic materials, which are expected to produce revolutionary applications of magnetism-related devices. To motivate the researchers in this area, we finally provide the challenges and outlook on 2D vdW magnetism.     

Observation of magnetoresistance in CrI3/graphene van der Waals heterostructures

Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI₃/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.     

A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Photodetectors based on two-dimensional (2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum (CBM) matched self-driven SnS₂/WS₂ van der Waals heterojunction photodetector based on a SiO₂/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination. This is attributed to the built-in electric field at the interface of the SnS₂ and WS₂ layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al₂O₃ layer is covered by the surface of the SnS₂/WS₂ photodetector to further improve the performance, because the Al₂O₃ layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.